单步电沉积法制备CuInS2薄膜

采用单步电沉积法在Mo基底上制备了高质量的CuInS2薄膜. 用X射线衍射仪(XRD)和扫描电子显微镜(SEM)表征了样品的结构和形貌, 研究了沉积电位、退火温度、pH值、反应物浓度等工艺条件对制备的CuInS2薄膜形貌、组分及性能的影响. 制备的CuInS2薄膜致密平整, 呈黄铜矿结构, 晶粒大小为1-2 μm. 用紫外-可见光分光光度计测试了其光学性能, 计算得到常温下禁带宽度为1.41 eV, 非常适合用作薄膜太阳电池的吸收层材料.     

化学浴沉积方法制备硫化铟敏化太阳电池及其性能研究

硫化铟是一种稳定、低毒性的半导体材料. 本文采用低成本的化学浴沉积方法制备了硫化铟敏化太阳电池, X射线衍射(XRD)、光电子能谱(XPS)和扫描电镜(SEM)结果表明形成了硫化铟敏化的二氧化钛薄膜. 化学浴沉积温度对所得硫化铟敏化薄膜的形貌有显著的影响, 进而影响电池性能. 温度太低时, 化学浴沉积反应速率太低, 只发生少量沉积; 温度太高时, 化学浴沉积反应速率较快, 硫化铟来不及沉积到二氧化钛多孔薄膜内部. 当温度在40℃时, 硫化铟沉积均匀性最好, 薄膜的光吸收性能最佳, 电池的短路电流最大, 另外, 填充因子达到最佳, 为65%, 电池总体光电转换效率为0.32%.     

混合溶剂对可录型光盘中吲哚类菁染料薄膜性能的影响

本文采用紫外可见光谱、FT-IR及AFM等手段,研究了混合溶剂对光盘记录介质吲哚类菁染料薄膜光学性能、稳定性和表面结构的影响.发现在不同混合溶剂下涂出的相同膜厚的染料薄膜,其光学性能和表面形貌都有很大的差异.不同的混合溶剂都存在一个最佳混合体积比,染料在此体积比下旋涂出膜的光学性能和表面形貌均优于单一溶剂下涂出的膜.对比不同混合溶剂涂出的膜的光学性质及AFM的观测结果,发现二丙酮醇与氯仿在等体积比混合、四氟丙醇与氯仿在7:3体积下混合时效果最好,易得到反射率高,表面较平整的染料薄膜.     

CuInS_2量子点敏化太阳能电池中尺寸依赖的电子注入和光电性质

研究了CuInS2(CIS)量子点敏化太阳能电池(QDSSCs)的电子注入和器件性能与粒子尺寸之间的依赖关系.首先合成了不同尺寸的CuInS2量子点(QDs),制备了CuInS2量子点敏化的TiO2薄膜,并组装了量子点敏化太阳能电池.通过循环伏安法确定了CuInS2量子点的能级位置.采用时间分辨荧光光谱分析测量了CuInS2量子点到TiO2薄膜的电子转移速率和效率.结果发现,随着粒子尺寸从4.0 nm减小到2.5 nm,电子注入速率略微增加而电子注入效率减小,同时量子点敏化太阳能电池的开路电压基本不变,而光电转换效率、短路电流和填充因子(FF)均减小.上述研究结果表明量子点敏化太阳能电池性能的优化可以通过改变量子点的尺寸来实现.     

直流磁控溅射工艺对SmCo薄膜的影响

采用不同的直流磁控溅射工艺, 制备了SmCo薄膜.分别用能谱(EDAX)和俄歇谱仪(ASE)对薄膜的平均成份和表面到内部成份分布进行了分析, 用振动样品磁强计(VSM)分析了薄膜的磁性能, 用原子力显微镜(ATM)分析了溅射薄膜的表面颗粒形貌.结果表明, 溅射工艺因素对薄膜的成份和磁性能有较大的影响.     

CuInS2纳米纸阵列薄膜的制备及生长机理

采用溶剂热合成技术,以氯化铜、硝酸铟和硫脲为反应物,十六烷基三甲基溴化铵(CTAB)为阳离子表面活性剂,草酸为还原剂,无水乙醇为溶剂,直接在掺氟的SnO2透明导电玻璃(FTO)衬底上合成CuInS2(CIS)薄膜.采用扫描电子显微镜(SEM)、高分辨率透射电子显微镜(HRTEM)、X射线衍射(XRD)、拉曼光谱、能量色散谱(EDS)、紫外-可见(UV-Vis)反射光谱和透射光谱对样品的形貌、结构、成分和光学性能进行分析.结果表明,在适当的反应物浓度下,在FTO衬底上形成了垂直衬底生长的、具有良好结晶性能的黄铜矿结构的CIS纳米纸阵列薄膜.CIS薄膜中Cu,In,S的原子比为1.1∶1∶2.09,在紫外-可见和近红外波段具有良好的光吸收特性,禁带宽度约1.51 eV.结合不同反应时间制备的CIS薄膜的形貌、结构和成分分析,讨论了CIS纳米纸阵列薄膜的生长机理.     

退火温度对CdSe纳米薄膜的形成及光电性能影响

在室温下,采用循环伏安法在ITO上沉积CdSe纳米薄膜。利用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)、X射线光电子能谱分析(XPS)、紫外-可见(UV-VIS)分光光度计以及电化学工作站对不同温度退火后的CdSe纳米薄膜的晶体结构、形貌、光学性能、光电化学性能进行表征和测试。结果表明,退火温度对CdSe纳米薄膜的形貌和性能起到关键性作用。薄膜表面平整、厚度均匀,且由呈纳米颗粒状的立方相CdSe构成;经退火后,CdSe纳米颗粒出现不同程度的长大现象,Se含量随退火温度的升高而减少。紫外-可见吸收光谱表明随着退火温度的升高,CdSe纳米薄膜对可见光的吸收发生红移,表明禁带宽度逐渐减小,表现出量子尺寸效应。通过光电流测试表明随着退火温度的升高,CdSe薄膜的光电响应效应显著提高。     

退火温度对CdSe纳米薄膜的形成及光电性能影响

在室温下,采用循环伏安法在ITO上沉积CdSe纳米薄膜。利用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)、X射线光电子能谱分析(XPS)、紫外-可见(UV-VIS)分光光度计以及电化学工作站对不同温度退火后的CdSe纳米薄膜的晶体结构、形貌、光学性能、光电化学性能进行表征和测试。结果表明,退火温度对CdSe纳米薄膜的形貌和性能起到关键性作用。薄膜表面平整、厚度均匀,且由呈纳米颗粒状的立方相CdSe构成;经退火后,CdSe纳米颗粒出现不同程度的长大现象,Se含量随退火温度的升高而减少。紫外-可见吸收光谱表明随着退火温度的升高,CdSe纳米薄膜对可见光的吸收发生红移,表明禁带宽度逐渐减小,表现出量子尺寸效应。通过光电流测试表明随着退火温度的升高,CdSe薄膜的光电响应效应显著提高。     

掺杂CuInS2纳米晶玻璃的三阶非线性光学性质

采用溶胶-凝胶法结合气氛控制制备了CuInS2纳米晶玻璃. 利用X射线粉末衍射仪(XRD)和透射电子显微镜(TEM)对CuInS2纳米晶在玻璃中的形貌和微结构进行了表征, 并利用飞秒Z扫描技术对该玻璃的三阶非线性光学性质进行了研究. 结果表明, 在钠硼硅玻璃中形成了尺寸分布为10 nm左右的均一的CuInS2四方晶系纳米晶. 该玻璃体现出优良的三阶非线性光学性能, 其三阶非线性光学折射率γ、吸收系数β和极化率χ(3)分别为8.57×10-16 m2/W, 3.74×10-8 m/W和1.95×10-17 m2/V2.     

液相电化学沉积法制备高氮含量CNx薄膜及性能的研究

采用液相电化学沉积法,以二氰二胺的丙酮溶液为沉积液,以镀有ITO(铟锡氧化膜)的导电玻璃为衬底制备了CNx薄膜.初步探讨了沉积温度和沉积电压对薄膜中氮含量的影响.通过XPS、FTIR光谱、SEM和US-Vis光谱对得到的CNx薄膜的化学结合状态、结构形貌和光学性质进行了表征,并用高电阻仪对薄膜的绝缘性进行了分析.XPS结果表明,CNx薄膜中碳氮主要以单键连接,sp3杂化的C—N键占85%.在IR光谱中,仅出现了C—N键和CN双键的吸收峰.SEM图谱显示CNx薄膜呈颗粒状,粒径平均为80nm左右.在水浴加热条件下沉积的CNx薄膜在200～300nm近紫外区为非线性吸收.薄膜的电阻率随氮含量的增加而增大,测量值在1012～1016Ω·cm之间.     

Microwave assisted novel MoBi2S5 nanoflowers: Synthesis,characterization, photoelectrochemical performance

In the present article, we have studied the effect of post annealing treatment on microstructural, optical and photoelectrochemical (PEC) properties of MoBi₂S₅ thin films synthesized by microwave assisted technique. The synthesized thin films are vacuum annealed for 4 h at 473 K temperature. The X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and UV–Vis–NIR spectrophotometer techniques were used for characterization of the as deposited and annealed MoBi₂S₅ thin films. The XRD patterns confirm the synthesized and annealed thin films have nanocrystalline nature with rhombohedral-orthorhombic crystal structure. SEM micrographs indicate that, nanoflowers exhibit sharper end after annealing. The optical absorption study illustrates that the optical band gap energy has been decrease from 2.0 eV to 1.75 eV with annealing. Finally, applicability of synthesized thin films has been checked for PEC property. The J-V curves revealed that synthesized thin film photoanodes are suitable for PEC cell application. As well, used simple, economical method has great potential for synthesis of various thin film materials.     

纳米二氧化钒薄膜的制备及红外光学性能

采用双离子束溅射方法在Si3N4/SiO2/Si基底表面沉积氧化钒薄膜, 在氮气气氛下热处理获得二氧化钒薄膜. 利用X射线衍射(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱(XPS)研究了热处理温度对氧化钒薄膜晶体结构、表面形貌和组分的影响, 利用傅里叶变换红外光谱(FT-IR)对二氧化钒薄膜的红外透射性能进行了测试分析. 结果表明, 所制备的氧化钒薄膜以非晶态V2O5和四方金红石结构VO2为主, 经400 ℃、2 h热处理后获得了(011)择优取向的单斜金红石结构纳米VO2薄膜, 提高热处理温度至450 ℃, 纳米结构VO2薄膜的晶粒尺寸减小. FT-IR结果显示,纳米VO2薄膜透射率对比因子超过0.99, 高温关闭状态下透射率接近0. 小晶粒尺寸纳米VO2薄膜更适合在热光开关器件领域应用.     

Effect of Hg2+doping and of the annealing temperature on the nanostructural properties of TiO2 thin films obtained by sol–gel method

This work is a study of Hg²⁺-doped TiO₂ thin films deposited on silicon substrates prepared by sol–gel method and treated at temperatures ranging between 600 to 1000 °C for 2 h. The structural and optical properties of thin films have been studied using different techniques. We analyzed the vibrations of the chemical bands by Fourier transform infrared (FTIR) spectroscopy and the optical properties by UV–Visible spectrophotometry (reflection mode) and photoluminescence (PL). The X-ray diffraction and Raman spectra of TiO₂ thin films confirmed the crystallization of the structure under the form of anatase, rutile, mercury titanate (HgTiO₃) as a function of the annealing temperature. The observation by scanning electron microscopy (SEM) showed the changing morphology, with respect to nanostructures, nanosheets, nanotubes, with the annealing temperature. The diameters of nanotubes ranged from 50 nm to 400 nm. The photoluminescence and reflectance spectra indicated that these structures should enhance photocatalytic activity.     

Structure and morphology of nanostructured zinc oxide thin films Prepared by dip-vs. spin-coating methods

In this study, we use dipping and spinning methods to coat glass slides with sol-gel ZnO thin films, composed of zinc acetate dihydrate, monoethanolamine (MEA), de-ionized water and isopropanol. The effect of the annealing temperature on the structural morphology and optical properties of these films is investigated. These ZnO films were preheated at 275 °C for 10 min and annealed either at 350, 450 or 550 °C for 60 min. As-deposited films, formed by amorphous zinc oxide-acetate submicron particles, are transformed into a highly-oriented ZnO after thermal treatment. The surface morphology, phase structure and optical properties of the thin films were investigated by scanning electron microscopy, X-ray diffraction (XRD) and optical transmittance. Both techniques produced nanostructured ZnO thin films with well-defined orientation. The annealed films were transparent in the visible range with an absorption edge at about 375 nm and a transmittance of ca 85–90% with an average diameter of 40 nm. XRD results show the film was composed of polycrystalline wurtzite, with a preferential c-axis orientation of (002) and a single sharp XRD peak at 34.40, corresponding to the hexagonal ZnO. The grain size is increased by the annealing temperature. Both coating techniques create sol-gel ZnO films with the potential for application as transparent electrodes in optic and electronic devices.     

Photovoltaic Behaviour of Titanyl Phthalocyanine Thin Films and Titania Bilayer Films

Summary: Titanyl phthalocyanine (TiOPc) thin films were prepared using evaporation and surface polymerization by ion-assisted deposition (SPIAD) in a vacuum deposition system. These films were characterized by means of ultraviolet and X-ray photoelectron spectroscopy as well as UV/Vis absorption spectroscopy. Valence band and elemental content indicated that phthalocyanine electronic and chemical structures were largely preserved during SPIAD. Further, bilayer thin films of titania (TiO₂) and SPIAD TiOPc were prepared. TiO₂ film was deposited by reactive magnetron sputtering of TiO₂ target. Study of the structured samples was focused on the optical and electrical properties of the composite films. The films were characterized by non-contact photovoltage measurements and UV-Vis spectroscopy. These results suggest there is a possibility to use these bilayer thin films in photovoltaic solar cells, however further experiments to improve conductivity of the films will be required.     

Effect of post‐deposition annealing on surface morphology and gas sensing properties of palladium phthalocyanine thin films

The effect of post‐deposition annealing on surface morphology and gas sensing properties of palladium phthalocyanine (PdPc) nanostructured thin films has been studied. PdPc thin films were deposited on polyborosilicate substrate by thermal evaporation technique at room temperature. The surface morphology of thin films was investigated by SEM, X‐ray diffraction, and optical absorption. X‐ray diffraction patterns showed a phase transition from α to β based on post‐deposition annealing at temperatures above 200 °C. The SEM and optical absorption confirmed that annealing strongly influenced the surface morphology of nanostructured thin films. Sandwich devices (Au|PdPc|Al) were fabricated and exposed to different concentrations of NO₂ and NH₃ as oxidizing and reducing gases at different temperatures, and the sensitivity of devices were obtained versus gases. Obtained results showed α‐PdPc thin film devices had higher sensitivity in comparison with devices in β‐phase. In particular, it was found that the sensitivity of devices is temperature dependent and the best operating temperature range of devices was measured at about 90–100 °C. Devices showed good reversibility, response, and recovery time at room temperature. Finally, the stability of sensors was investigated for a period of about 1 year; results showed that the sensors were stable for 2 months and lost about 30% of their sensitivity after 1 year. Copyright © 2012 John Wiley & Sons, Ltd.     

Structural stability and phase transitions in WO3 thin films

Tungsten oxide (WO3) thin films have been produced by KrF excimer laser (lambda = 248 nm) ablation of bulk ceramic WO3 targets. The crystal structure, surface morphology, chemical composition, and structural stability of the WO3 thin films have been studied in detail. Characterization of freshly grown WO3 thin films has been performed using X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy (RS), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) measurements. The results indicate that the freshly grown WO3 thin films are nearly stoichiometric and well crystallized as monoclinic WO3. The surface morphology of the resulting WO3 thin film has grains of approximately 60 nm in size with a root-mean-square (rms) surface roughness of 10 nm. The phase transformations in the WO3 thin films were investigated by annealing in the TEM column at 30-500 degrees C. The phase transitions in the WO3 thin films occur in sequence as the temperature is increased: monoclinic --> orthorhombic --> hexagonal. Distortion and tilting of the WO6 octahedra occurs with the phase transitions and significantly affects the electronic properties and, hence, the electrochemical device applications of WO3.     

Electrical,optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnNx thin films

We present a study of electrical and optical properties of nitrogen‐doped tin oxide thin films deposited on glass by the DC Magnetron Sputtering method. The deposition conditions to obtain p‐type thin films were a relative partial pressure between 7% and 11% (N₂ and/or O₂), a total working pressure of 1.8 mTorr and a plasma power of 30 W. The deposited thin films were oxidized after annealing at 250°C for 30 minutes. X‐ray diffraction results showed that the as‐deposited thin films exhibit a Sn tetragonal structure, and after annealing, they showed SnO tetragonal structure. X‐ray photoelectron spectroscopy results showed the presence of nitrogen in the samples before and after annealing. The measured physical parameters of the thin films were optical band gap between 1.92 and 2.68 eV, resistivity between 0.52 and 5.46 Ωcm, a concentration of p‐type carriers between 10¹⁸ and 10¹⁹ cm^?3, and a Hall mobility between 0.1 and 1.94 cm²V^?1s^?1. These thin films were used to fabricate p‐type thin film transistors.