Efficient low-voltage operation of a reverse-biased autoprepulse XeCl laser

An improved version of the auto-prepulse excitation scheme for long-pulse operation of the XeCl excimer laser is reported. A pulsed reverse bias on the small peaking capacitance allows efficient (1.7%) operation at 100 mJ output level with a charge voltage limited to 5–7 kV. Analogies and differences with other long-pulse operation schemes are also discussed.     

Pressure dependence of the electric field gradient in Sb and Sb1−x M x (M=ln,Zn, Ge,Pb, Cd,Sn) at the site of111Cd

Using the¹¹¹Cd-TDPAC (time differential perturbated angular correlation) method, the pressure dependence of the electric field gradient (EFG) in Sb and Sb_1–x M _x (M=ln, Zn, Ge, Pb, Cd, Sn) was investigated. The application of a phenomenological ansatz for the parametrisation of the pressure and temperature dependence of the EFG made it possible to combine temperature data gained in former studies [1], [2] with the pressure dependent data presented in this paper. The resulting pressure dependence of –2±0.2 MHz/kbar is shown to be independent of concentration and element of admixture. Results for the volume and explicit temperature dependence agree with existing information on the mixed system Sb_1–x M _x (M=ln, Zn, Ge, Pb, Cd, Sn); the investigation of the EFG in Sb_1–x–y M _x Pb _y showed that the resulting EFG may be interpreted as the weighted sum of the individual contributions of the two metals.This paper is dedicated to Prof. Dr. W. Kreische on the occasion of his 60th aniversary on 02.02.1995     

CO2-laser isotope separation of tritium with pentafluoroethane-T (C2TF5)

Isotope separation of tritium by CO₂ laser-induced multiphoton dissociation (MPD) of C₂TF₅ is reported for the first time. The MPD spectrum obtained for C₂TF₅ comprised a broad peak at about 940 cm^–1 where C₂HF₅ was nearly transparent. The unimolecular dissociation of C₂TF₅ was induced with much lower laser fluence than that for CTF₃, another working molecule we proposed for laser isotope separation of tritium. The mechanisms and kinetics of the dissociation of C₂TF₅ and C₂HF₅ were investigated under various experimental conditions: laser frequency, pulse energy, pulse duration, tritium concentration, sample pressure, buffer gas pressure and irradiation geometry. Single-step separation factors exceeding 500 were achieved with the most efficientP(20) line in 00^o–10^o0 transition at 944.2 cm^–1.     

Memory characteristics of platinum nanoparticle-embedded MOS capacitors

The capacitance characteristics of platinum nanoparticle (NP)-embedded metal–oxide–semiconductor (MOS) capacitors with gate Al₂O₃ layers are studied in this work. The capacitance versus voltage (C–V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C–V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.     

Hysteresis in MOS structures based on Hg1−xCdxTe

Measurements have been made on the electrophysical characteristics of H_g1–xCd_xTe MOS structures of n type (E_g = 0.12–0.2 eV) at a working temperature T=77°K.The experimental results indicate that the hysteresis in the voltage-capacitance characteristics VCC of these MOS structures arises from carrier injection and trapping and also from charge transfer in deep centers DC when the voltage on the field electrode is altered.It is found that in the frequency range examined, the VCC hysteresis may alter in magnitude and reverse in sign.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 81–84, November, 1983.     

Time Dependence of the Capacitance of a MOS Silicon Tunnel Diode under the Influence of Hydrogen

The results of theoretical and experimental investigations into the time dependence of the capacitance of MOS silicon diodes with a thin tunnel dielectric and a palladium field electrode under the influence of a gas hydrogen-containing mixture are presented. Analytical expressions are derived that describe the time dependence of the capacitance of the space charge region (SCR) of the MOS tunnel diode operating in depletion and enrichment regimes. It is demonstrated that the time dependence of the SCR capacitance of the MOS diode placed in the gas mixture is caused by diffusion of hydrogen atoms from the field electrode to the SiO _x –n-Si interface. The relaxation time of hydrogen atom accumulation at the interface is 47 s for the diode with a SiO _x layer thickness of 3.7 nm placed in the gas mixture with 0.3 vol.% of H₂. It has been established that the flat band voltage and the SCR capacitance of the MOS diode change under the influence of the gas mixture due to the decreased density of surface acceptor states at the SiO _x –n-Si interface, the increased positive charge density in the dielectric, and the decreased contact potential difference.     

Characterization of tunnel oxide passivated contact with n-type poly-Si on p-type c-Si wafer substrate

The junction properties of tunnel silicon oxide (SiO_x) passivated contact (TOPCon) with n-type poly-Si on p-type c-Si wafer are characterized using current-voltage (J-V) and capacitance-voltage (C-V) measurements. The dark J-V curves show a standard diode characteristic with a turn-on voltage of ～0.63 V, indicating a p-n junction is formed. While the C-V curve displays an irregular shape with features of 1) a slow C increase with the decrease of the magnitude of reverse bias voltage, being used to estimate the built-in potential (V_bi), 2) a significant increase at a given positive bias voltage, corresponding to the geometric capacitance crossing the ultrathin SiO_x, and 3) a sharp decrease to negative values, resulting from the charge tunneling through the SiO_x layer. The C of depleting layer deviates from the normal linear curve in the 1/C²-V plot, which is caused by the diffusion of P dopants from the n-type poly-Si into the p-type c-Si wafer as confirmed by the electrochemical capacitance-voltage measurements. However, the 1/C^2+γ-V plots with γ > 0 leads to linear curves with a proper γ and the V_bi can still be estimated. We find that the V_bi is the range of 0.75–0.85 V, increases with the increase of the doping ratio during the poly-Si fabrication process, and correlates with the passivation quality as measured by the reverse saturated current and implied open circuit voltage extracted from transient photoconductivity decay.     

Properties of reactively sputtered Mo1−x O x films

Molybdenum oxide (Mo_1–xO_x) films were prepared by reactive rf sputtering of a Mo target in O₂/Ar plasma. The dependence of film properties on various sputtering parameters is investigated. The atomic percentage of oxygen (x) in the Mo_1–xO_x films decreases with sputtering power and increases with the partial pressure of oxygen. Mo_1–xO_x films that exhibit metallic conductivities can be obtained over a wide range of sputtering conditions. The intrinsic film stress of conducting Mo_1–xO_x is compressive. Such M_1–xO_x films were shown by backscattering spectrometry to be excellent diffusion barriers between Al and Si up to 600 °C annealing for 30 min.     

Dc and ac electrical conductivity of bulk CdSexTe1−x (0x0.4)

Measurements of the dc and ac conductivity were made for polycrystalline CdSe_xTe_1−x (0x0.4) at various frequencies (0.1–100 kHz) and at various temperatures (293–413 K). The temperature dependence of the dc conductivity was measured in the temperature range (293–413 K). It was found that the obtained dc activation energy for the investigated compositions decrease with the increase of Se content. The ac conductivity is found to be frequency and temperature dependent and obeys the Aω^s law, where s decreases with the increase of temperature. The ac conductivity of these compositions are explained on the basis of the correlated barrier hopping model.     

Investigation of dielectric and electrical behaviour of nanocrystalline Zn1−xMnxO (x=0 to 0.10) semiconductors synthesized by mechanical alloying

The results on the measurement of electric and dielectric behaviour and capacitance–voltage characteristics of Zn_1−xMn_xO (x=0 to 0.10) nanocrystalline semiconductors are reported. Direct current conductivity increases with the increase Mn concentration and its thermal behavior can be explained by adiabatic polaronic hopping model. The alternating current conductivity obeys a power law of temperature and frequency. The temperature exponent p strongly depends on Mn concentration. The temperature dependence of frequency exponent s suggests that the overlapping large polaron conduction model is the appropriate conduction mechanism for the investigated samples. The interfacial boundaries and grain contribution to the dielectric properties can be identified by the analysis of complex impedance. Relaxation behaviour of the samples can be explained from the analysis of the electric modulus. Formation of Schottky diode can be described from capacitance–voltage characteristic of the samples and different diode parameters can be extracted from it.     

Mixing of 30 THz laser radiation with nanometer thin-film Ni-NiO-Ni diodes and integrated bow-tie antennas

Mixing experiments with 30 THz CO₂-laser radiation as well as the detection of 35 ps 30 THz pulses of an optical-free-induction-decay CO₂-laser system have been performed with the first nanometer thin-film Ni-NiO-Ni diodes with a minimum contact area of 0.012 µm². Difference frequencies up to 85 MHz were detected by mixing two different CO₂-laser beams coupled to the diode with an integrated bow-tie antenna. The dependence of the beat signal on bias voltage, laser power and polarization of the infrared laser radiation was determined.     

Electrical breakdown of dysprosium oxide films

The principal laws governing the electrical breakdown of dysprosium oxide films in silicon metal — insulator — semiconductor structures are investigated. The dependence of the breakdown field E_br on the rise rate of the voltage on the structure K_v, the temperature, the material and area of the electrode, and the humidity of the environment is studied. The dependence of the time delay of breakdown on the amplitude of a rectangular voltage pulse is investigated. It is established that the breakdown field increases linearly with log K_v for all insulator thicknesses, and the saturation of E_br is observed at K_v>10⁵ V/sec. It is found that E_br does not depend on the electrode material and decreases as the area of the electrode or the temperature is increased. The maximum breakdown field is determined: E _br ^max =14 MV/cm. The mechanism of the precursory stage of breakdown, i.e., the period of transient buildup of critical charge in the insulator, is discussed.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 95–101, August, 1995.     

Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on -SiC substrates

We have succeeded in obtaining high critical electric fields from AlGaN layers using the p-InGaN/i-Al_xGa_1−xN/n-Al_xGa_1−xN (x=0–0.22) vertical conducting diodes grown on n-SiC substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE). The breakdown voltage (V_B) increases with increasing Al composition of the AlGaN layer. The corresponding critical electric fields are calculated to be 2.4 MV/cm for GaN and 3.5 MV/cm for Al_0.22Ga_0.78N. The critical electric field is proportional to the bandgap energy to a power of 2.5. This bandgap energy dependence is much stronger than that in the empirical expression proposed by Sze and Gibbons. The figure of merit, , increases with increasing Al composition, indicating the AlGaN-based p–i–n diodes are promising for high-power and high-temperature electronic device applications.     

Optical,structural, electrical and optoelectronic properties of hydrogenated amorphous Si1−x C x alloy thin films prepared by planar magnetron sputtering method

Amorphous Si_1–xC_x: H thin films were prepared by the rf magnetron sputtering method using a composite target of silicon and graphite. The dependence of the optical, structural, electrical, and optoelectronic properties on the carbon contentx was investigated, by measuring the optical absorption spectra, ir spectra, dark conductivity, photoconductivity and ESCA spectra. The optical gap was found to be unchanged with increasingx below about 0.6, in spite of the increase in the amount of the SiC bond. This is considered to be due to the formation of the carbon clusters. It is found that the photosensitivity shows a maximum at aboutx = 0.2, and is about one order of magnitude larger than the film withx = 0. This is related to the decrease in the dark conductivity, which is ascribed both to the formation of the SiC bond and to the reorganization of the defect-rich structure of sputter-deposited amorphous Si by the addition of about 20% carbon. The photoconductive effect was gradually lost in the range ofx above 0.6. In this range, the optical gap increases rapidly owing to the rapid increase of the SiC bond.     

Selective optothermal detection of NO2 and H2O with a frequency-tuned CO waveguide laser

The results are reported of the CO-laser optothermal (OT) detection of impurity gases when their absorption spectra overlap with those of an interfering gas. The influence of the latter was avoided using low gas pressures corresponding to a maximum of the OT sensitivity. Frequency tuned in the 5.2–6.3 m wavelength range, ¹²C¹⁶O and ¹³C¹⁶O waveguide lasers were used. The fine frequency tuning at 490 MHz was achieved for 150 laser transitions of both molecules. The OT sensitivity was estimated by NO₂ detection in the presence of water vapor. The minimal detectable concentration proved to be 60 ppb at P _19–18(14) transition of a ¹²C¹⁶O laser for NO₂ and 75 ppb on P _12–11(13) transition of a ¹³C¹⁶O laser for H₂O.     

Thermoelectric properties of Ag2Se

To obtain information on the temperature and concentration dependence of thermoelectric quality factor Z and to clarify the nature of scattering in Ag₂Se a study was made of electrical conductivity , thermo-emf , and thermal conductivity in silver selenide over the temperature range T=80–450°K at concentration levels of 2–43·10²⁴ m^–3. It is shown that in Ag₂Se the Lorentz number L, determined experimentally from the electronic fraction of the thermal conductivity, is less than the Sommerfeld number L_o. Calculation of L/L_o(n) performed with a theory considering inelastic scattering of carriers, shows that the inelasticity is produced by electron interaction. Comparison of experimental data on the temperature dependence of lattice thermal conductivity with theory permits the conclusion that in Ag₂Se in range 80–300°K the basic role in phonon scattering is played by three-phonon Umklapp processes. It is shown that with increase in T and decrease in n the thermoelectric quality factor of silver selenide increases. The highest value of Z was achieved in a specimen with electron concentration n=2·10²⁴ m^–3 at T=320°K. The rapid decrease in Z upon phase transition is related to discontinuous decrease in and at this point.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 27–31, October, 1981.     

Effect of Cr on hyperfine parameters in a-Fe-Cr-Si-B alloys

Mössbauer studies on a-Fe_80–xCr_xSi₈B₁₂ (x = 0,2,...12) at 5K have been reported. The average hyperfine field and width of P(H) distribution have been analysed by a model which assumes a random distribution of Cr atoms. On assumption that the hyperfine field distribution of Fe atom with r number of Cr nearest neighbours is given by a gaussian with a mean field H_r =H_o - rC₁ + r²C₂; C and C₂ being constants; broad features of Mössbauer spectra are explained.     

Effect of substrate bias voltage on the structure, electric and dielectric properties of TiO2 thin films by DC magnetron sputtering

Titanium dioxide (TiO₂) films have been deposited on glass and p-silicon (1 0 0) substrates by DC magnetron sputtering technique to investigate their structural, electrical and optical properties. The surface composition of the TiO₂ films has been analyzed by X-ray photoelectron spectroscopy. The TiO₂ films formed on unbiased substrates were amorphous. Application of negative bias voltage to the substrate transformed the amorphous TiO₂ into polycrystalline as confirmed by Raman spectroscopic studies. Thin film capacitors with configuration of Al/TiO₂/p-Si have been fabricated. The leakage current density of unbiased films was 1 × 10⁻⁶ A/cm² at a gate bias voltage of 1.5 V and it was decreased to 1.41 × 10⁻⁷ A/cm² with the increase of substrate bias voltage to −150 V owing to the increase in thickness of interfacial layer of SiO₂. Dielectric properties and AC electrical conductivity of the films were studied at various frequencies for unbiased and biased at −150 V. The capacitance at 1 MHz for unbiased films was 2.42 × 10⁻¹⁰ F and it increased to 5.8 × 10⁻¹⁰ F in the films formed at substrate bias voltage of −150 V. Dielectric constant of TiO₂ films were calculated from capacitance–voltage measurements at 1 MHz frequency. The dielectric constant of unbiased films was 6.2 while those formed at −150 V it increased to 19. The optical band gap of the films decreased from 3.50 to 3.42 eV with the increase of substrate bias voltage from 0 to −150 V.     

Electrical conduction and optical properties of amorphous (Sb2Se3)100−xSnx thin films

The variation of DC electrical conductivity and the optical properties of thermally evaporated a- (Sb₂Se₃)_100−xSn_x thin films with temperature have been studied. It is found that the thermal activation energy decreases, while the optical gap first increases (up to x=1) and then decreases, with the increase in Sn content. These results have been explained by taking into consideration the structural modifications induced by the incorporation of Sn into the parent alloy. The variation in the conductivity prefactor (σ_o) with Sn addition indicates a change in the dominant conduction transport mechanism from extended states to localized states. An experimental correlation between the activation energy and the pre-exponential factor has been observed, indicating the validity of Meyer–Neldel rule in the studied samples.     

Two diodes model and illumination effect on the forward and reverse bias I–V and C–V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature

The forward and reverse bias current–voltage (I–V), capacitance/conductance–voltage (C/G–V) characteristics of the fabricated Au/PVA (Bi-doped)/n-Si photodiode have been investigated both in dark and under 250 W illumination intensity at room temperature. The energy density distribution profile of N_ss was extracted from the forward bias I–V measurements by taking the voltage dependence of effective barrier height (Φ_e) and R_s for photodiode both in dark and under 250 W illumination cases. The exponential growth of the N_ss from midgap toward the bottom of the conductance band is very apparent for two cases. The obtained high value of n and R_s were attributed to the particular distribution of N_ss at metal/PVA interface, surface and fabrication processes, barrier inhomogeneity of interfacial polymer layer and the form of barrier height at M/S interface. While the values of C and G/w increase R_s and R_sh decrease under illumination, due to the illumination induced electron–hole pairs in depletion region. The voltage dependent N_ss profile was also obtained from the dark and illumination capacitance at 1 MHz and these values of N_ss are in good agreement. In addition, the fill factor (FF) under 250 W illumination level was found as 28.5% and this value of FF may be accepted sufficiently high. Thus, the fabricated Au/PVA (Bi-doped)/n-Si structures are more sensitive to light, proposing them as a good candidate as a photodiode or capacitance sensor for optoelectronic applications in modern electronic industry.