Light trapping enhancement in thin film silicon solar cells with different front and back grating periodicities

Dual-grating structure thin-film silicon solar cells with different front and back grating periodicities are designed The geometrical parameters of both gratings are investigated. The reflection is greatly reduced by the front grating, whereas the absorption in the long wavelength is increased because of the back grating. The short circuit current of the combined structure is enhanced by 16.8% for a 1μm thick c-Si layer compared with that of the conformal grating structure. The short circuit current can be further increased by creating a relative lateral displacement between the front and back gratings. The displacement results in a more remarkably enhaneed absorption when the thickness of the aetive layer is reduced, indicating its importance in the design of ultra-thin high-efficiency solar cells.     

Absorption enhancement in thin film a-Si solar cells with double-sided SiO_2 particle layers

Light absorption enhancement is very important for improving the power conversion efficiency of a thin film a-Si solar cell. In this paper, a thin-film a-Si solar cell model with double-sided SiO2 particle layers is designed, and then the underlying mechanism of absorption enhancement is investigated by finite difference time domain(FDTD) simulation;finally the feasible experimental scheme for preparing the SiO2 particle layer is discussed. It is found that the top and bottom SiO2 particle layers play an important role in anti-reflection and light trapping, respectively. The light absorption of the cell with double-sided SiO2 layers greatly increases in a wavelength range of 300 nm–800 nm, and the ultimate efficiency increases more than 22% compared with that of the flat device. The cell model with double-sided SiO2 particle layers reported here can be used in varieties of thin film solar cells to further improve their performances.     

CdTe薄膜太阳电池背接触的研究

用近空间升华法制备了CdTe多晶薄膜，用硝酸-磷酸(NP)混合液对薄膜表面进行了腐蚀.经SEM观测，腐蚀后的CdTe薄膜晶界变宽，XRD测试发现，经NP腐蚀后，在CdTe薄膜表面生成了一层高电导的富Te层.在腐蚀后的CdTe薄膜上分别制备了Cu，Cu/ZnTe：Cu，ZnTe：Cu，ZnTe/ZnTe：Cu四种背接触层，比较了它们对太阳电池性能的影响.结果表明，用ZnTe/ZnTe：Cu复合层作为背接触层的效果较好，获得了面积为0.5cm²，转换效率为13.38%的CdTe多晶薄膜太 关键词： 硝磷酸腐蚀 背接触层 CdTe太阳电池     

铜锌锡硫硒薄膜太阳能电池

光伏发电是将“取之不尽、用之不竭”的清洁能源太阳能直接转化为电能的一种新能源技术。大力发展光伏技术并促进其大规模应用是推进能源结构转型的重要途径。光伏发电是通过太阳能电池实现的,经过60多年的发展,涌现了各类太阳能电池,其中硅太阳能电池一直占据主导地位,极大地推动了光伏产业的大规模应用。但硅太阳能电池进一步降低成本愈发困难,而新型薄膜太阳能电池拥有低成本、高效率,且适于多场景应用的优点,成为明日之星。铜锌锡硫硒太阳能电池作为一种新型薄膜太阳能电池,其吸光系数高、弱光响应好、稳定性高、环境友好、组成元素储量丰富且价格低廉,具有很大的发展潜力,近年来受到越来越多的关注。文章重点介绍铜锌锡硫硒太阳能电池的工作原理、关键材料与器件的研究进展以及未来的发展前景。     

前后光栅周期对于双光栅结构薄膜太阳能电池光俘获效应的影响

本文用时域有限差分法对硅层等效厚度为100 nm的具有不同前后光栅周期的介质/金属双光栅结构薄膜太阳能电池进行了模拟分析,比较了三角形最佳相同与不同周期光栅结构的吸收光谱特性,分析了光栅高度、填充比、硅吸收层厚度对最佳相同和不同周期光栅结构光吸收特性的影响,以及相应结构中导致光吸收增强的共振模式.结果表明前后光栅周期为1:1的共形双光栅结构中存在光泄漏现象,偏离1:1后的光栅结构可有效地抑制低级次衍射光的泄漏,前光栅周期小于后光栅周期的结构光吸收性能的提高来自于平面波导模式在吸收层中的有效激发和传播,而前光栅周期大于后光栅周期的结构光吸收性能的提高则来自于后光栅界面上所激发的等离子体极化模式.在较厚的硅吸收层厚度,前后光栅周期比为1:2和1:3的电池结构也会出现光泄漏现象,从而使具有最大光吸收效率的结构偏离这些周期比结构的位置.     

Drying of thin film polymer solar cells

Our focus of investigations is on the dependency of the polymer solar cell (PSC) characteristics on drying conditions like temperature and kinetic effects. We optimized the homogeneity for the doctor bladed active layer in conjunction with viscosity measurements, examined the dependency of cell characteristics on drying kinetics with best results at slow drying and accomplished differential scanning calorimetry (DSC) with solution-processed samples in the typical annealing temperature range.     

碲化镉薄膜太阳电池中的关键科学问题研究

文章对CdTe薄膜太阳电池中的4个关键科学问题进行了讨论,并对电池器件的性能进行了研究,其中包括高质量硫化镉薄膜、背接触层、CdS/CdTe界面和CdCl2热处理性能的研究.文章作者研究了背电极接触层中Cu掺杂含量对电池性能的影响,通过改变背接触层中Cu的含量,可以改变Cu与Te反应产生的物相成分,从而发现以Cu1.4Te为主导的背接触缓冲层能有效地减少电池I—V曲线中的“翻转”(roll-over)现象,同时能有效地降低背接触势垒.此外,还研究了CdS/CdTe界面的CdCl2热处理反应,发现当热处理温度高于350℃时,CdS与CdTe之间的互扩散开始发生,此温度对应于CdS由立方相转变为六方相;而在550℃热处理后,S和Te互扩散形成的CdSxTe1-x化合物,其x值高达11％.通过优化电池制备工艺,获得了在AMl.5标准光源下高达14.6％的CdTe电池转换效率.     

碲化镉薄膜太阳电池中的关键科学问题研究

文章对CdTe薄膜太阳电池中的4个关键科学问题进行了讨论,并对电池器件的性能进行了研究,其中包括高质量硫化镉薄膜、背接触层、CdS/CdTe界面和CdCl2热处理性能的研究。文章作者研究了背电极接触层中Cu掺杂含量对电池性能的影响,通过改变背接触层中Cu的含量,可以改变Cu与Te反应产生的物相成分,从而发现以Cu1.4Te为主导的背接触缓冲层能有效地减少电池I—V 曲线中的“翻转”(roll-over)现象,同时能有效地降低背接触势垒。此外,还研究了CdS/CdTe界面的CdCl2热处理反应,发现当热处理温度高于350℃时,CdS与CdTe之间的互扩散开始发生,此温度对应于CdS由立方相转变为六方相;而在550℃热处理后,S 和Te 互扩散形成的CdSxTe1-x 化合物,其x 值高达11%。通过优化电池制备工艺,获得了在AM1.5标准光源下高达14.6%的CdTe电池转换效率。     

Development of sulphurized SnS thin film solar cells

Thin films of tin sulphide (SnS) have been grown by sulphurization of sputtered tin precursor layers in a closed chamber. The effect of sulphurization temperature (T_s) that varied in the range of 150–450 °C for a fixed sulphurization time of 120 min on SnS film was studied through various characterization techniques. X-ray photoelectron spectroscopy analysis demonstrated the transformation of metallic tin layers into SnS single phase for T_s between 300 °C and 350 °C. The X-ray diffraction measurements indicated that all the grown films had the (111) crystal plane as the preferred orientation and exhibited orthorhombic crystal structure. Raman analysis showed modes at 95 cm⁻¹, 189 cm⁻¹ and 218 cm⁻¹ are related to the A_g mode of SnS. AFM images revealed a granular change in the grain growth with the increase of T_s. The optical energy band gap values were estimated using the transmittance spectra and found to be varied from 1.2 eV to 1.6 eV with T_s. The Hall effect measurements showed that all the films were p-type conducting nature and the layers grown at 350 °C showed a low electrical resistivity of 64 Ω-cm, a net carrier concentration of 2 × 10¹⁶ cm⁻³ and mobility of 41 cm² V⁻¹ s⁻¹. With the use of sprayed Zn_0.76Mg_0.24O as a buffer layer and the sputtered ZnO:Al as window layer, the SnS based thin film solar cell was developed that showed a conversion efficiency of 2.02%.     

Scattering properties of ZnO gratings on A1 back reflectors for thin film silicon solar cells

Light scattering properties of back grating structures that composed of one-dimensional ZnO gratings and a flat 300-nm A1 reflectors are investigated. Results show that grating structures cause an 8% reduction of the total reflectivity, as grating periods increasing from 620 to 1435 nm, both the diffuse reflectivity and the haze parameter enhance drastically between 400 and 1 000 nm, whereas the diffraction angle at normal incidence reduce greatly, which agree with the values calculated from grating equation. It is concluded that rear gratings have the potential of scattering a substantial amount of incident light to specific angles and enlarging the optical path.     

Wet chemical etched CdTe thin film solar cells

Wet chemical etching process on as-deposited CdTe surface using nitric-phosphoric (NP) acid improved the efficiency of CdS/CdTe solar cells from 10.1% to 13.8%. Nitric-phosphoric (NP) acid solution etched native oxide (TeO₂) layer and resolved excess cadmium on CdTe surface. After the heat treatment process activated the CdCl₂, CdO layer which was believed to be a diffusion barrier of chlorine did not grow on the etched CdTe surface and new (V_Cd^2?–2Cl_Te¹⁺)⁰ complexes was located at E_V + 0.045 eV. New (V_Cd^2?–2Cl_Te¹⁺)⁰ complexes acted as a shallow acceptors and induced to improve V_oc and J_sc. The surface of CdTe thin film has been studied using Scanning Electron Microscope (SEM), X-ray Diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and low temperature Photoluminescence (PL).     

Characteraction of Ag-doped ZnO thin film synthesized by sol–gel method and its using in thin film solar cells

Pure 2% and 4% Ag-doped ZnO thin films have been synthesized on glass substrates by sol–gel method. The structure, morphology and optical properties of the samples have been studied by X-ray diffractometer (XRD), scanning probe microscope, UV–vis spectrophotometer, respectively. The XRD result shows that the pure ZnO has a wurtzite hexagonal structure, no phase segregation is observed. The surface morphology of pure ZnO thin film shows that the grains are growing preferentially along the c-axis orientation perpendicular to the substrates. The transmittance spectra reveal that all samples have high transmittance above 90% in visible region. With Ag doping content increase, a red shift is observed. The performance of Ag-doped ZnO films using in thin film solar cells are simulated. The results show that 4% Ag-doped ZnO thin film can greatly improve the absorption of the cells. Compare to pure ZnO, solar cell's energy conversion efficiency improvement of 2.47% is obtained with 4% Ag doped ZnO thin film.     

一维金属光栅嵌入磁性介质纳米结构下的横向磁光克尔效应的增强

本文在一维金属光栅嵌入磁性介质的体系中实现了横向磁光克尔效应的增强.通过最优化金属光栅的嵌入深度来有效激发磁性介质中的波导模式与金属条带上的局域等离激元模式,从而使横向磁光克尔效应的响应得到巨大增强.本文提出了一种用于增强横向磁光克尔效应的新型等离激元微纳结构,这种结构可以应用于高性能磁光器件的设计.     

An improved design approach for thin film solar cells

In this paper an improved design for thin film solar cells is proposed to enhance conversion efficiency. This proposed structure includes two pairs of additional contact to the reversed bias of absorber and buffer layers, directly. The purpose of additional electrodes is to control the carrier distribution in the active region of device. This idea has been implemented on the fabricated Copper indium gallium selenide solar cell with the record efficiency of 22%. The simulations show an improvement of 2% in the conversion efficiency is obtained by direct application of reverse biasing on the absorber and buffer layer. The increase of short circuit current more than 3 mA/cm² is responsible for the improved performance. The open circuit voltage and fill factor of cell can also be increased by the controlling reverse bias.     

Near-infrared absorption enhancement for perovskite solar cells via the rear grating design

Optical and Quantum Electronics - The features of laser shock peening technology was studied in relation to the physical processes occurring during and after laser treatment. The effect of laser...     

Sensitivity enhancement of surface plasmon resonance sensor using continuous film metallic gratings

A surface plasmon resonance (SPR) sensor based on continuous film metallic gratings is numerically investigated for enhance sensitivity. The results calculated by rigorous coupled-wave analysis (RCWA) present that interplays between localized surface plasmons and surface plasmons polaritons contribute to sensitivity enhancement. The sensitivity enhancement factor (SEF), which represents the influence of metallic grating, increased as the grating period decreased. In addition, several reflection dips can be achieved as the period of metallic grating increased. By double-dips method, the sensitivity SPR sensor based on continuous film grating-based is improved into 153.23°/RIU, which is more sensitive than conventional thin film-based SPR sensor in the same condition. The SPR sensor based on continuous film metallic gratings exhibits good linearity.     

二元矩形金属光栅衍射增强电磁理论

采用耦合波原理计算了TM波经过二元纳米量级金属光栅衍射的电磁场，研究了金属光栅的占空比、光栅深度及TM波入射角对衍射后的光栅表面电磁场的增强的影响，针对金属金、银做了探讨和分析，得出重要的结论. 关键词： 耦合波原理 金属光栅 衍射     

Optimized emitter contacting on multicrystalline silicon thin film solar cells

We present an optimized contacting scheme for multicrystalline silicon thin film solar cells on glass based on epitaxially crystallized emitters with a thin Al₂O₃ layer and a silver back reflector. In a first step a 6.5 µm thick amorphous silicon absorber layer is crystallized by a diode laser. In a second step a thin silicon emitter layer is epitaxially crystallized by an excimer laser. The emitter is covered by an Al₂O₃ layer with a thickness ranging from 1.0 nm to 2.5 nm, which passivates the surface and acts as a tunnel barrier. On top of the Al₂O₃ layer a 90–100 nm thick silver back reflector is deposited. The Al₂O₃ layer was found to have an optimal thickness of 1.5 nm resulting in solar cells with back reflector that achieve a maximum open‐circuit voltage of 567 mV, a short‐circuit current density of 27.9 mA/cm², and an efficiency of 10.9%. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

基于氧化镍背接触缓冲层碲化镉薄膜太阳电池的研究

采用电子束蒸发法制备了NiO薄膜,并对其作为碲化镉薄膜太阳电池背接触缓冲层材料进行了相关研究.NiO缓冲层的加入使得碲化镉太阳电池开路电压显著增大.通过X射线光电子能谱测试得到的NiO/CdTe界面能带图表明NiO和CdTe的能带匹配度很好.NiO是宽禁带P型半导体材料,在电池背接触处形成背场,减少了电子在背表面处的复合,从而提高电池开路电压.通过优化NiO薄膜厚度,制备得到转换效率为12.2%、开路电压为789 mV的碲化镉太阳电池.研究证实NiO是用来制备高转换效率、高稳定性碲化镉薄膜太阳电池的一种极有前景的缓冲层材料.     

Computational efficient RCWA method for simulation of thin film solar cells

This paper presents a new implementation of the Fourier modal method to solve the Maxwell equations in nanostructured optoelectronic solid state devices such as thin-film solar cells. The proposed algorithm is suitable for structures with arbitrary spatial variation of the permittivity and it is based on an improved and computationally efficient approach that does not involve the calculation of eigenvalues. The two-dimensional (2-D) numerical simulator has been applied to model the light propagation in a thin film amorphous silicon solar cell in order to analyze the dependence of conversion efficiency on the morphology of the internal interfaces.