Growth and characterization of La2/3Ca1/3MnO3 thin films on ‘silicon on insulator’ substrates

La_2/3Ca_1/3MnO₃ thin films have been grown on SrTiO₃, LaAlO₃, and yttria-stabilized zirconia buffered silicon-on-insulator (SOI) substrates by the pulsed laser deposition technique. While full cube-on-cube epitaxy was achieved on the SrTiO₃ and LaAlO₃ substrates, a coexistence of the cube-on-cube and cube-on-diagonal epitaxy was observed in the the manganite films on SOI substrates. Besides the intrinsic four-fold magnetocrystalline anisotropy, a uniaxial anisotropy also exists in the films, which is determined by the demagnetization field and the mismatch-induced strain. A tensile strain leads to an easy plane, while a compressive strain favors an easy axis. The different magnetization configurations in the films on different substrates are the reason for their varied transport and magnetic properties. Due to a combined effect of these magnetic anisotropy, the magnetization in the two crystallography domains in the film on SOI tends to lie in the film plane but align in their respective easy axes. There are always large spin angles across the domain boundaries. As a result, a quite large low-field magnetoresistance (LFMR) based on spin-dependent tunnelling was observed. It shows a resistance change of ∼20% at 50 K in a magnetic field ∼700 Oe, which is promising for real applications. PACS 75.47.Lx; 72.25.Mk     

Anisotropic magnetoresistance of partially relaxed SrRuO3 films

The SrRuO₃ films (50 nm thick) grown by laser evaporation on (001)(LaAlO₃)_0.3 + (Sr₂AlTaO₆)_0.7 substrates were under partially relaxed biaxial compressive mechanical stresses. The films consisted of crystallites with lateral dimensions of 40–100 nm and a relative azimuthal misorientation of about 0.9°. Ferromagnetic ordering of spins in the SrRuO₃ films was manifested by a change in the slope of the temperature dependence of their electrical resistivity ρ at T ≈ 155 K. For a magnetic field H parallel to the measuring current, the maximum values (∼7.5%) of the magnetoresistance MR = [ρ(μ₀ H = 5 T) − ρ(μ₀ H = 0)]/ρ(μ₀ H = 0) were observed at temperatures of about 100 K. At T = 95 K (μ₀ H = 5 T), the anisotropic magnetoresistance of the films was 8% and increased by a factor of approximately 1.5 with decreasing temperature to 4.2 K.     

Persistent spin splitting of a two-dimensional electron gas in tilted magnetic fields

The effect of atomic disorder on the electron transport and the magnetoresistance (MR) of Co₂CrAl Heusler alloy (HA) films has been investigated. We show that Co₂CrAl films with L2₁ order exhibit a negative value for the temperature coefficient of resistivity (TCR) in a temperature range of 10 < T < 290 K, and the temperature dependence of electric conductivity varies as T ^3/2 similarly to that of the zero-gap semiconductors. The atomic or the site disorder on the way of L2₁ → B2 → A2 → amorphous state in Co₂CrAl HA films causes the deviation from this dependence: reduction in the absolute value of TCR as well as decrease in the resistivity down to ϱ(T = 293 K) ∼ 200 μΩ cm in comparison to ϱ(T = 293 K) ∼ 230 μΩ cm typical for the Co₂CrAl films with L2₁ order. The magnetic-field dependence of MR of the Co₂CrAl films with L2₁ order is determined by two competing contributions: a positive Lorentz scattering and a negative s-d scattering. The atomic disorder in Co₂CrAl films drastically changes MR behavior due to its strong influence on the magnetic properties.     

Magnetoresistive properties of cold-pressed CrO<Subscript>2</Subscript> powder,prepared by hydrothermal synthesis

The resistive, magnetoresistive and magnetic properties of cold-pressed CrO₂, powder prepared by hydrothermal synthesis from chromic anhydride have been studied. The powder particles (with a mean diameter of about 120 nm) were nearly spherical. The particles stabilized with a β-CrOOH surface layer. The powder compact (with a Curie temperature of about 385 K) revealed nonmetallic temperature behavior of the resistance (with an R(T) dependence close to exponential at T < 20 K). A giant negative magnetoresistance (MR) (∼20% at T ≈ 5K) is found. MR decreased rapidly with an increase in temperature (to 0.3% at T > 200 K). Such MR behavior is shown to be typical of a system of magnetic grains with magnetic (spin-dependent) tunneling.     

Variations in the electrical resistivity of La0.67Ca0.33MnO3 films and induced interconversions of ferromagnetic and nonferromagnetic inclusions in their bulk

A significant (∼1.8%) positive unit between the parameters of the crystal lattice is the reason of tetragonal distortion (a _⊥/a _‖ ≈ 1.04) and reduction in the volume of the unit cell of La_0.67Ca_0.33MnO₃ films (15 nm) quasicoherently grown on the (001) surface of a LaAlO₃ substrate. The films consist of single-crystal blocks with the lateral size of 30–50 nm. The atomically smooth LaAlO₃-La_0.67Ca_0.33MnO₃ interphase boundary has no misfit dislocations. At T = 4.2 K, the transformation of nonferromagnetic phase inclusions into ferromagnetic ones in a constant magnetic field H is accompanied by a stable reduction in the electrical resistivity ρ of manganite films with time, so that the curve ρ(t) is well approximated by the relationship ρ(t) ∼ ρ₁(t − t ₀)^1/2, (where t ₀ is the time for establishment of the specified value (μ₀ H = 5 T) of the magnetic field and ρ₁ is a coefficient independent of H). The magnetocrystalline anisotropy due to the elastic deformation of films by the substrate and stratification of electronic phases are the reasons of the distinct hysteresis in the dependences ρ(μ₀ H, T < 100 K) obtained on μ₀ H scanning in the sequence 5 T → 0 → −5 T → 0 → 5 T. At T = 50 K and μ₀ H = 0.4 T, the magnetoresistance MR = 100% [ρ(μ₀ H) − ρ(μ₀ H = 0)]/ρ(μ₀ H = 0) of LCMO films attains 150%.     

Colossal magnetoresistance of FexMn1−xS magnetic semiconductors

The magnetic, electric, magnetoresistive, and structural properties are investigated in the sulfide solid solutions Fe_xMn_1−2x S, which are based on the antiferromagnetic semiconductor α-MnS (the fcc NaCl lattice). Colossal negative magnetoresistance (δ_H∼−83% at 160 K for x ∼ 0.29), comparable to that observed in La-Ca-Mn-O polycrystals and films (δ_H∼−90% at 100 K and 40 kOe), is observed in compounds with intermediate concentrations 0.26<x<0.4, corresponding to the region of incipient ferromagnetism. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 12, 895–899 (25 June 1999)     

Investigation of Rb <Emphasis Type="Italic">D</Emphasis><Subscript>1</Subscript> atomic lines in strong magnetic fields by fluorescence from a half-wave-thick cell

It has been experimentally demonstrated that the use of the effect of significant narrowing of the fluorescence spectrum from a nanocell that contains a column of atomic Rb vapor with a thickness of L = 0.5λ (where λ = 794 nm is the wavelength of laser radiation, whose frequency is resonant with the atomic transition of the D ₁ line of Rb) and the application of narrowband diode lasers allow the spectral separation and investigation of changes in probabilities of optical atomic transitions between levels of the hyperfine structure of the D ₁ line of ⁸⁷Rb and ⁸⁵Rb atoms in external magnetic fields of 10–2500 Gs (for example, for one of transitions, the probability increases ∼17 times). Small column thicknesses (∼390 nm) allow the application of permanent magnets, which facilitates significantly the creation of strong magnetic fields. Experimental results are in a good agreement with the theoretical values. The advantages of this method over other existing methods are noted. The results obtained show that a magnetometer with a local spatial resolution of ∼390 nm can be created based on a nanocell with the column thickness L = 0.5λ. This result is important for mapping strongly inhomogeneous magnetic fields.     

Giant magnetoresistance in Cu–Co films electrodeposited on n-Si

High quality Cu–Co alloy films with excellent metallic luster have been electrolytically deposited directly onto n-Si (1 0 0) substrate, thereby eliminating the need of a conducting seed layer, which is otherwise required when the films were grown on insulating substrates (Al₂O₃). The as-deposited Cu–Co films exhibit relatively higher magnetoresistance (MR) in comparison with the as-deposited films on Al₂O₃ under identical conditions. The observed increase in MR could be attributed to the reduced substrate current shunting. The MR further improves to 2.67% (at H=10 kOe) with vacuum annealing (at 425°C for 30 min) of the films on Si. This has been ascribed to the separation of Cu and Co phases resulting in a magnetic granular nanostructure. This value of MR of annealed films on Si is, however, lower in comparison with the value obtained for annealed films deposited on Al₂O₃. Glancing angle X-ray diffraction (GAXRD) has revealed the formation of copper silicide in these samples, which is responsible for the lower value of MR. Thus we have observed good MR with a copper silicide host matrix.     

Interlayer magnetotransport study in electron-doped Sm2−x Ce x CuO4−δ

Vortex and pseudogap states in electron-doped Sm_2−x Ce _x CuO_4−δ (x ∼ 0.14) are investigated by the interlayer transport in magnetic fields up to 45 T. To extract intrinsic properties, we fabricated small 30 nm-high mesa structures, sufficiently thin to be free of the recently reported partial decomposition problems. On cooling, the c-axis resistivity ρ_c of the mesa structures reveals a semiconductive upturn above T_c, followed by a sharp superconducting transition at 20 K. When the magnetic fieldH is applied along the c-axis, ρ_c(T) shows a parallel shift without significant broadening, as also observed in the hole-doped underdoped cuprates. Above the transition we observe negative magnetoresistance (MR), which can be attributed to the field suppression of the pseudogap, whose magnitude is as small as 38 K. Our results in thex ∼ 0.14 samples closely correspond to the interlayer transport behavior in the ‘overdoped’ regime of hole-doped Bi₂Sr₂ CaCu₂ O_8+y.     

Magnetotransport properties of a layered La1.6Ca1.4Mn2O7 polycrystal

Magnetotransport properties of a two-layered La_1.6Ca_1.4Mn₂O₇ polycrystal have been examined as a function of temperature and applied field. It was found that the magnetic transition temperature (T_c) is about 70 K higher than the insulator–metal transition temperature (T_p). Two peaks were observed on both the temperature dependence of the imaginary part of the ac magnetic susceptibility χ^′′(T ) and that of the magnetoresistance MR(T). One is slightly below T_p∼107 K and the other is near T_c∼170 K. Below 70 K, the MR ratio increases with decreasing temperature. Around and above T_p but below T_c, the magnetization shows some indication of saturation, whereas the MR ratio shows no indication of saturation. The magnetotransport properties can be explained by considering the anisotropy exchange interactions along the a–b plane and the c direction, and the low-temperature MR can be attributed to the effects of the nearly fully spin-polarized carriers’ tunneling through the insulating (La,Ca)₂O₂ layers between the adjacent MnO₂ bilayers. Received: 18 September 2000 / Accepted: 20 February 2001 / Published online: 26 April 2001     

Atomic structure and transport and magnetic properties of the Sm1−x SrxMnO3 system

This is the first study of the temperature dependences of the atomic structure by neutron diffraction, as well as of the resistivity, differential magnetic susceptibility, and magnetoresistance of the ceramic system ¹⁵⁴Sm_1−x Sr_xMnO₃ (x∼0.16–0.4). Samples (x⩾0.3) having an initially orthorhombic structure transfer upon cooling from the insulating to the metallic state and exhibit giant magnetoresistance, which at liquid-helium temperature reaches as high as 90% in magnetic fields up to 30 kOe. At lower doping levels (x⩽0.25), the compound has monoclinic structure. The resistivity of such compounds in zero magnetic field displays insulating behavior upon lowering the temperature to 77 K. Fiz. Tverd. Tela (St. Petersburg) 40, 1271–1276 (July 1998)     

Percolation effects in the conductivity and magnetoresistance of compacted chromium dioxide powder

The resistive and magnetoresistive properties of a submicron (120 nm) compacted CrO₂ powder with a Curie temperature of ∼385 K were investigated in the temperature range of 5–430 K for magnetic fields of up to 1.6 T. The specimen revealed a nonmetallic temperature dependence of resistance and high negative magnetoresistance (MR) (20%) in a low-temperature range. The MR magnitude rapidly decreased with an increase in temperature and was less than 0.3% for T > 200 K. Such MR behavior is shown to be characteristic for granular systems with spin-dependent intergranular tunneling. Some features of MR behavior in a low-temperature range (lower than 40 K) can be attributed to the percolation nature of the tunnel conductivity of such a granular system in the presence of a limited number of dominant conducting current paths.     

Electro- and magnetotransport in La0.67Ba0.33MnO3 nanosized films coherently grown on a vicinally polished (LaAlO3)0.29 + (SrAl0.5Ta0.5O3)0.71 substrate

The structure, orientation, and the response of electroresistance to magnetic field H and varying temperature T have been studied for 30-nm-thick La_0.67Ba_0.33MnO₃ (LBMO) films. The deviation of the [001] direction in manganite layers from the normal to the plane of the (LaAlO₃)_0.29 + (SrAl_0.5Ta_0.5O₃)_0.71 substrate strictly corresponds to the vicinal angle of the latter. The minimum yield determined from 227-keV proton scattering spectra is 0.025, signifying a high order of the cationic sublattice in the films. The biaxial compression of stable nuclei of the manganite phase affects their stoichiometry, thus contributing to the depletion of LBMO films in the alkaline-earth element. The maximum electroresistance values have been observed in the films grown at T _max ≈ 320 K, a temperature about 20 K lower than the Curie temperature of the corresponding bulk single crystals, and the maximum magnetoresistance (MR ≈ −0.42, μ₀ H = 2 T) occurs at T ≈ 300 K. At low temperatures (T < T _max/3) and μ₀ H < 0.45 T, the electroresistance response of LBMO films to a magnetic field materially depends on the anisotropic magnetoresistance and the intensity of hole scattering from domain walls; when μ₀ H > 0.5 T, the major current-carrier relaxation mechanism is the interaction with magnons.     

Preparation, magnetoresistance and magnetocaloric effect of two-layered perovskite La 2.5- x K 0.5+ x Mn 2 O 7+δ

Polycrystalline two-layered perovskite La_2.5-xK_0.5+xMn₂O _{7 + δ} (0 < x < 0.5) samples have been prepared by a modified sol-gel method and their magnetoresistance and magnetocaloric effects have been studied. A large deviation between the metal-insulator (MI) transition temperature (T _ρ ) and the magnetic transition temperature (T_C) is observed. Large magnetoresistance (MR) effects with Δρ/ρ of ∼40% at 12 kOe are obtained in wide temperature ranges. The maximum of the magnetic entropy change peaks at its Curie temperature (T_C), far above its MI transition temperature (T _ρ ). The large magnetic entropy change (∼1.4 J/kg.K) is obtained in the sample La_2.5-xK_0.5+xMn₂O _{7 + δ} (x = 0.35) upon 10 kOe applied magnetic field. Received 2 May 2002 / Received in final form 1st October 2002 Published online 19 December 2002 RID="a" ID="a"e-mail: wzhong@ufp.nju.edu.cn     

Intricacies of strain and magnetic field induced charge order melting in Pr0.5Ca0.5MnO3 thin films

Thin films of the half-doped manganite Pr_0.5Ca_0.5MnO₃ were grown on (1 0 0) oriented MgO substrates by pulsed laser deposition technique. In order to study the effect of strain on the magnetic field induced charge order melting, films of different thicknesses were prepared and their properties were studied by X-ray diffraction, electrical resistivity and magnetoresistance measurements. A field induced charge order melting is observed for films with very small thicknesses. The charge order transition temperature and the magnetic field induced charge order melting are observed to depend on the nature of strain that is experienced by the film.     

Thickness dependence of electroresistance in La0.67Ca0.33MnO3 epitaxial films

The electroresistance (ER) of La_0.67Ca_0.33MnO₃ (LCMO) epitaxial thin films with different thicknesses was studied. For the 110 nm thick LCMO film, its ER shows a maximum at T_p, where the resistance shows a peak, and decreases to zero at lower temperatures. While for the 30 nm thick LCMO film, its ER is remarkable in a wide temperature range. Another interesting observation in this work is that the electric current can tune the magnetoresistance of the ultrathin LCMO thin film. The results were discussed by considering the coexistence of ferromagnetic metallic phase with the charge ordered phase, and the variation of the phase separation with film thickness and electric current. This work also demonstrates that electric current can tune the magnetoresistance of the manganites, which is helpful for their applications.     

Magnetocaloric effect in Pr<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ag<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>MnO<Subscript>3</Subscript> manganites

The magnetocaloric effect in alternating magnetic fields has been investigated in Pr_{1 − x} Ag _x MnO₃ manganites with x = 0.05−0.25. The stepwise reversal of the sign of the magnetocaloric effect has been revealed in a weakly doped sample (x = 0.05) at low temperatures (∼80 K). This reversal is attributed to the coexistence of the ferromagnetic and canted antiferromagnetic phases with different critical temperatures.     

Highly oriented La2/3Ca1/3MnO3 films grown on silicon-on-insulator substrates by pulsed laser deposition

High quality La_2/3Ca_1/3MnO₄(LCMO) thin films have been deposited on silicon-on-insulator (SOI) substrates only buffered by yt tria-stabilized zirconia (YSZ) by using the pulsed laser deposition (PLD) technique. The results obtained from X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM) and magnetization investigations indicate that the LCMO films are highly oriented both in-plane and out-of-plane. The Curie temperature T _c is close to 260 K and the insulator–metal (I–M) transition appears around 220 K. The conducting mechanism at low temperatures is dominated by the electron–magnon scattering. A tensile stress from the film–substrate lattice mismatch results in magnetic ‘easy axes’ in the film plane and the magnetic anisotropy energy increases with cooling. A maximum magnetoresistance (MR) is observed near 190 K, with the external magnetic field either parallel or vertical to the LCMO film plane. Moreover, the large intrinsic high-field magnetoresistance (HFMR) and the very small extrinsic low-field magnetoresistance (LFMR) again reveal that the LCMO films on SOI substrates are highly oriented thin films of good crystallinity.     

Magnetoresistance and magnetic ordering in praseodymium and neodymium hexaborides

The magnetoresistance Δρ/ρ of single-crystal samples of praseodymium and neodymium hexaborides (PrB₆ and NdB₆) has been measured at temperatures ranging from 2 to 20 K in a magnetic field of up to 80 kOe. The results obtained have revealed a crossover of the regime from a small negative magnetoresistance in the paramagnetic state to a large positive magnetoresistive effect in magnetically ordered phases of the PrB₆ and NdB₆ compounds. An analysis of the dependences Δρ(H)/ρ has made it possible to separate three contributions to the magnetoresistance for the compounds under investigation. In addition to the main negative contribution, which is quadratic in the magnetic field (−Δρ/ρ ∝ H ²), a linear positive contribution (Δρ/ρ ∝ H) and a nonlinear ferromagnetic contribution have been found. Upon transition to a magnetically ordered state, the linear positive component in the magnetoresistance of the PrB₆ and NdB₆ compounds becomes dominant, whereas the quadratic contribution to the negative magnetoresistance is completely suppressed in the commensurate magnetic phase of these compounds. The presence of several components in the magnetoresistance has been explained by assuming that, in the antiferromagnetic phases of PrB₆ and NdB₆, ferromagnetic nanoregions (ferrons) are formed in the 5d band in the vicinity of the rareearth ions. The origin of the quadratic contribution to the negative magnetoresistance is interpreted in terms of the Yosida model, which takes into account scattering of conduction electrons by localized magnetic moments of rare-earth ions. Within the approach used, the local magnetic susceptibility χ_loc has been estimated. It has been demonstrated that, in the temperature range T _N < T < 20 K, the behavior of the local magnetic susceptibility χ_loc for the compounds under investigation can be described with good accuracy by the Curie-Weiss dependence χ_loc ∝ (T − Θ _p )⁻¹.     

Influence of the transport current on the magnetoelectric properties of La0.7Pb0.3MnO3 single crystals with giant magnetoresistance in the microwave region

The results of experiment on the influence of a direct current and a low-frequency alternating current, as well as a magnetic field, on the microwave-range conductivity σ _MW of Ln_0.7Pb_0.3MnO₃ single crystals with giant magnetoresistance are presented. The greatest sensitivity of the samples toward the effects of a current is observed in the temperature range corresponding to the dc magnetoresistance maximum. The response signal of a sample in the microwave range to the effects of an alternating current of a low frequency f ₀ has a nonlinear character. As f ₀ is varied in a magnetic field, the amplitude of the response signal varies with the appearance of resonance peaks. The results obtained are interpreted within an approach based on the coexistence of two phases having different conductivities in the doped manganite crystals. This two-phase interpretation is supported by data from magneticresonance investigations, which demonstrate the existence of two magnetic phases over a broad temperature range in Ln_0.7Pb_0.3MnO₃ single crystals. Fiz. Tverd. Tela (St. Petersburg) 41, 2007–2015 (November 1999)