Electrophysical properties of poly(<Emphasis Type="Italic">N</Emphasis>-vinylcarbazole)-carbon nanotubes composite films

The specific features of charge carrier transport in poly(N-vinylcarbazole) films doped with single-wall carbon nanotubes have been investigated. The mobilities of electrons and holes in ITO-polymer composite-Al samples have been determined by the time-of-flight method and by measuring the voltage-current characteristics of steady-state currents. According to the time-of-flight experiments, in the films of a poly(N-vinylcarbazole)-0.26 wt % single-wall carbon nanotubes composite, the drift mobility of electrons lies within (1.2–4.5) × 10^?6 cm²/(V s) and exceeds the mobility of holes by a factor of 5. The shape of the transient current suggests the dispersion character of transport of electrons and holes. With an increase in the concentration of single-wall nanotubes from 0.26 to 0.43 wt %, the conductivity of the composite films increases by two orders of magnitude; that is, the threshold of conductivity percolation has been achieved. A simple model is proposed to describe the transport of charge carriers in the polymer system under study.     

Electrical Methods to Elucidate Charge Transport in Hybrid Perovskites Thin Films and Devices

The panchromatic light absorption and excellent charge carrier transport properties in organo lead halide perovskites allowed to achieve an unprecedented power conversion efficiency in excess of 25 % for thin film photovoltaics fabrication. To understand the underlying phenomena, various comprehensive set of optical and electrical techniques have been employed to investigate the charge carrier dynamics in such devices. In this perspective, we aim to summarize the electrical transport properties of perovskite thin films by using (i) impedance spectroscopy (IS), (ii) space charge limited current (SCLC), (iii) field‐effect transistors (FETs) and (iv) time‐of‐flight (TOF) methods. We have deliberated various equivalent circuit used to model the perovskite solar cells by means of IS. The SCLC technique provide vital electrical parameters such as mobility, activation energy, traps density and distribution, carrier concentration, density of states, etc. The TOF technique measures mobility as a primary parameter while the FETs configuration provide a valuable insight into the in‐plane charge transport in perovskites thin films. We believe that these notable understanding will provide insights into charge carrier dynamics in perovskite materials and devices.     

Influences of molecular packing on the charge mobility of organic semiconductors: from quantum charge transfer rate theory beyond the first-order perturbation

The electronic coupling between adjacent molecules is an important parameter for the charge transport properties of organic semiconductors. In a previous paper, a semiclassical generalized nonadiabatic transition state theory was used to investigate the nonperturbative effect of the electronic coupling on the charge transport properties, but it is not applicable at low temperatures due to the presence of high-frequency modes from the intramolecular conjugated carbon-carbon stretching vibrations [G. J. Nan et al., J. Chem. Phys., 2009, 130, 024704]. In the present paper, we apply a quantum charge transfer rate formula based on the imaginary-time flux-flux correlation function without the weak electronic coupling approximation. The imaginary-time flux-flux correlation function is then expressed in terms of the vibrational-mode path average and is evaluated by the path integral approach. All parameters are computed by quantum chemical approaches, and the mobility is obtained by kinetic Monte-Carlo simulation. We evaluate the intra-layer mobility of sexithiophene crystal structures in high- and low-temperature phases for a wide range of temperatures. In the case of strong coupling, the quantum charge transfer rates were found to be significantly smaller than those calculated using the weak electronic coupling approximation, which leads to reduced mobility especially at low temperatures. As a consequence, the mobility becomes less dependent on temperature when the molecular packing leads to strong electronic coupling in some charge transport directions. The temperature-independent charge mobility in organic thin-film transistors from experimental measurements may be explained from the present model with the grain boundaries considered. In addition, we point out that the widely used Marcus equation is invalid in calculating charge carrier transfer rates in sexithiophene crystals.     

Charge carrier mobility and concentration as a function of composition in AgPO3-AgI glasses

Conductivity data of the xAgI(1 - x)AgPO(3) system (0 ≤ x ≤ 0.5) were collected in the liquid and glassy states. The difference in the dependence of ionic conductivity on temperature below and above their glass transition temperatures (T(g)) is interpreted by a discontinuity in the charge carrier's mobility mechanisms. Charge carrier displacement occurs through an activated mechanism below T(g) and through a Vogel-Fulcher-Tammann-Hesse mechanism above this temperature. Fitting conductivity data with the proposed model allows one to determine separately the enthalpies of charge carrier formation and migration. For the five investigated compositions, the enthalpy of charge carrier formation is found to decrease, with x, from 0.86 to 0.2 eV, while the migration enthalpy remains constant at ≈0.14 eV. Based on these values, the charge carrier mobility and concentration in the glassy state can then be calculated. Mobility values at room temperature (≈10(-4) cm(2) V(-1) s(-1)) do not vary significantly with the AgI content and are in good agreement with those previously measured by the Hall-effect technique. The observed increase in ionic conductivity with x would thus only be due to an increase in the effective charge carrier concentration. Considering AgI as a weak electrolyte, the change in the effective charge carrier concentration is justified and is correlated to the partial free energy of silver iodide forming a regular solution with AgPO(3).     

Electrical conductivity of polycrystalline films of p-sexiphenyl

In this work the results of DC conductivity measurements of polycrystalline p-sexiphenyl thin films are presented. The investigations concerned the effect of temperature, film thickness and electric field on the DC conductivity mechanism. The thickness of the investigated material varied from 0.2 to 2.5 μm. The measurements were carried out for different electrode polarities of the 0 -100 V voltage and at temperatures ranging from 15 to 325 K. Thin films of p-sexiphenyl were obtained by controlled vacuum sublimation on BK-7 glass substrate with gold and aluminium electrodes. Analyzing the obtained results we conclude that injection of the charge carrier from electrodes into the investigated material proceeds by thermionic emission and field emission and it is dependent on temperature and external electric field. The charge carrier transport is controlled by localized states (traps) in the forbidden energy gap. The activation energy calculated from formula ln I = f(1/kT) varied from kT for low temperature up to 1.0 eV.     

High-Performance Organic Field-effect Transistors from Functionalized Zinc Meso-Porphyrins

A series of new zinc porphyrins were synthesized, and their charge transport property was tuned by introducing various groups. Triarylamine was introduced to the porphyrin moiety at the meso-position as an electron donor, enhancing the charge carrier mobility. All the synthesized zinc porphyrins are thermally stable with a decomposition temperature over 178 °C. High frontier molecular orbitals levels of these compounds make them stable donor materials. SEM analysis of zinc porphyrins fabricated by spin-coating resulted in diversely self-assembled films. Field-effect transistors were fabricated using bottom-gate/top-contact architecture (BGTC) by solution-processable technique. The higher charge carrier mobility of 5.17 cm²/Vs with on/off of 10⁶ was obtained for trifluoromethyl substituted compound due to better molecular packing. In addition, GIXRD analysis revealed zinc porphyrins films crystalline nature, which supports its better charge carrier mobility. The present investigation has validated that zinc porphyrin building blocks are an attractive candidate for p-channel OFET devices.     

Structures, electronic states, photoluminescence, and carrier transport properties of 1,1-disubstituted 2,3,4,5-tetraphenylsiloles

The excellent electroluminescent (EL) properties of 1,1-disubstituted 2,3,4,5-tetraphenylsiloles, 1-methyl-1,2,3,4,5-pentaphenylsilole (MPPS), and 1,1,2,3,4,5-hexaphenylsilole (HPS) have been found. Despite some studies devoted to these materials, very little is known about the real origin of their unique EL properties. Therefore, we investigated the structures, photoluminescence (PL), and charge carrier transport properties of 1,1-disubstituted 2,3,4,5-tetraphenylsiloles as well as the effect of substituents on these characteristics. The single crystals of the three siloles involving 1,1-dimethyl-2,3,4,5-tetraphenylsilole (DMTPS), MPPS, and HPS were grown and their crystal structures were determined by X-ray diffraction. Three siloles have nonplanar molecular structures. The substituents at 1,1-positions enhance the steric hindrance and have predominant influence on the twisted degree of phenyl groups at ring carbons. This nonplanar structure reduces the intermolecular interaction and the likelihood of excimer formation, and increases PL efficiency in the solid state. The silole films show high fluorescence quantum yields (75-85%), whereas their dilute solutions exhibit a faint emission. The electronic structures of the three siloles were investigated using quantum chemical calculations. The highest occupied molecular orbitals (HOMOs) and the lowest unoccupied molecular orbitals (LUMOs) are mainly localized on the silole ring and two phenyl groups at 2,5-positions in all cases, while the LUMOs have a significant orbital density at two exocyclic Si-C bonds. The extremely theoretical studies of luminescent properties were carried out. We calculated the nonradiative decay rate of the first excited state as well as the radiative one. It is found that the faint emission of DMTPS in solutions mainly results from the huge nonradiative decay rate. In solid states, molecular packing can remarkably restrict the intramolecular rotation of the peripheral side phenyl ring, which has a large contribution to the nonradiative transition process. This explains why the 1,1-disubstituted 2,3,4,5-tetraphenylsiloles in the thin films exhibit high fluorescence quantum yields. The charge carrier mobilities of the MPPS and HPS films were measured using a transient EL technique. We obtained a mobility of 2.1 x 10(-)(6) cm(2)/V.s in the MPPS film at an electric field of 1.2 x 10(6) V/cm. This mobility is comparable to that of Alq(3), which is one of the most extensively used electron transport materials in organic light-emitting diodes (LEDs), at the same electric field. The electron mobility of the HPS film is about approximately 1.5 times higher than that of the MPPS film. To the best of our knowledge, this kind of material is one of the most excellent emissive materials that possess both high charge carrier mobility and high PL efficiency in the solid states simultaneously. The excellent EL performances of MPPS and HPS are presumably ascribed to these characteristics.     

Role of mesoscopic molecular organization in organic-based thin film transistors

Organic-based thin film transistors have been realized from various organic conjugated materials, which can be gathered into two categories, according to the mechanism describing charge transport. In conjugated polymers and amorphous materials, occurrence of a variable range hopping mechanism leads to a direct relationship between doping level, conductivity and carrier mobility, which explains the difficulty for achieving materials possessing, at the same time, a high mobility and a low conductivity. On the other hand, the trap-limited mechanism of charge transport in conjugated oligomers allows a distinct control of carrier mobility and conductivity. Carrier mobility in thin films of conjugated oligomers can be increased by lowering the concentration of grain boundaries, which can be readily achieved by imposing long range structural ordering of oligomer molecules. Thin films of oligomer with a liquid crystal-like structure have thus been realized, using a self-assembly approach, which presents a mobility close to that of a single crystal of this oligomer. On the other hand, conductivity of these oligomers can be decreased by controlling the purity of these materials. High mobility and low conductivity values can thus be achieved with conjugated oligomers, allowing the realization of organic thin-film transistors presenting characteristics close to those of amorphous-silicon based ones.     

Electrical properties of σ-conjugated polymers with additives and their applications in sensors

The charge carrier transport in poly[methyl(phenyl)silylene] (PMPSi) proceeds predominantly along the σ-delocalized Si backbone with participation of interchain hopping and polaron formation. The charge carrier mobility increases with increasing electron affinity of acceptor dopands having zero dipole moments. On the other band, the hole drift mobility is influenced by the dipole moment of the dopand. The electrostatic charge-dipole interactions cause a broadening of the energy distribution of transport states, which results in a decrease in the charge carrier mobility. An addition of organic salts leads, under the conditions of increased humidity, to an increase in electrical conductivity and capacitance. This is demonstrated on the layers PMPSi/1,5-dimorpholino-1,5-diphenylpentamethinium perchlorate.     

PHOTOCONDUCTIVE PROPERTIES OF PVK:Alq3 BLEND FILMS STUDIED BY STEADY-STATE AND TIME-RESOLVED TRANSIENT PHOTOCURRENT SPECTRA

The carrier transport properties of the blends of the hole transport material poly(N-vinylcarbazole) (PVK) and the electron transport material tris (8-hydroxyquinolinolato) aluminumⅢ(Alq_3) are investigated at room temperature using steady-state and time-resolved transient photocurrent measurements as a function of doping concentration of Alq_3.Due to lower LUMO and higher HOMO energy level of Alq_3 than those of PVK,Alq_3 molecules may act as carrier trap states in PVK films at low concentration.However...     

Photoinduced charge carrier generation in a poly(3-hexylthiophene) and methanofullerene bulk heterojunction investigated by time-resolved terahertz spectroscopy

We report on the ultrafast photoinduced charge separation processes in varying compositions of poly(3-hexylthiophene) (P3HT) blended with the electron acceptor [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). Through the use of time-resolved terahertz spectroscopy, the time- and frequency-dependent complex photoconductivity is measured for samples with PCBM weight fractions (WPCBM) of 0, 0.2, 0.5, and 0.8. By analysis of the frequency-dependent complex conductivity, both the charge carrier yield and the average charge carrier mobility have been determined analytically and indicate a short (<0.2 nm) carrier mean free path and a suppressed long-range transport that is characteristic of carrier localization. Studies on pure films of P3HT demonstrate that charge carrier generation is an intrinsic feature of the polymer that occurs on the time scale of the excitation light, and this is attributed to the dissociation of bound polaron pairs that reside on adjacent polymer chains due to interchain charge transfer. Both interchain and interfacial charge transfer contribute to the measured photoconductivity from the blended samples; interfacial charge transfer increases as a function of increasing PCBM. The addition of PCBM to the polymer films surprisingly does not dramatically increase the production of charge carriers within the first 2 ps. However, charge carriers in the 0.2 and 0.5 blended films survive to much longer times than those in the P3HT and 0.8 films.     

Reinvestigation of carrier transport properties in liquid crystalline 2-phenylbenzothiazole derivatives

We have reinvestigated the charge carrier transport properties in a liquid crystal of 2-(4'-heptyloxyphenyl)-6-dodecylthiobenzothiazole (7O-PBT-S12), for which the electronic conduction was first established in rodlike liquid crystals and for which the highest hole mobility in the smectic A (SmA) phase ever achieved was reported. We found that 7O-PBT-S12 exhibited three crystal phases, one of which appeared in a limited temperature range of 10 degrees just below the phase transition temperature from the SmA phase. In this crystal phase, nondispersive transient photohole currents were observed in time-of-flight experiments, and its hole mobility was determined to be 8 x 10(-3) cm(2)/Vs, slightly higher than that reported previously in the SmA phase. For the SmA phase, however, the hole mobility was 1 x 10(-4) cm(2)/Vs. Furthermore, we established the electron transport in the SmA phase of purified 7O-PBT-S12, whose mobility was the same as the hole mobility in that phase. In order to confirm generality of the new findings in 7O-PBT-S12, we investigated the carrier transport properties of its derivative having a short hydrocarbon chain, 2-(4'-heptyloxyphenyl)-6-butylthiobenzothiazole (7O-PBT-S4), and obtained comparable results. The present results correct a mistake in the previous report and give an idea of what a typical mobility in the SmA phase is. On the basis of these results, we discuss what determines the charge carrier mobility in smectic mesophases.     

Effect of interface in bilayer polydiphenylenephthalide film on electron transport

The results of studies of multilayer film structures based on a wide-gap polymer using the time of flight technique are shown. Experimental data showed that transport of charge carriers depends strongly on the presence of a polymer/polymer interface. The possibility is shown of increasing the threshold thickness of the experimental structure, in which effects of switching to a highly conducting state induced by uniaxial mechanical pressure are also found. Preliminary interpretation of the obtained data is performed.     

Electron transport of holes in molecularly doped polycarbonate and its radiation-induced conductivity

The salient features of charge transport in a typical molecularly doped polymer (polycarbonate + 30 wt % DEH hydrazone) were studied by time-of-flight and nonsteady-state radiation-induced conductivity measurements. It was shows that the mobility of holes (major carriers) is due to dispersive transport in the temperature range 296–353 K covering the glass transition temperature at an observation time of up to a few seconds. The appearance of a plateau on the current transient, presumably manifesting the establishing of quasiequilibrium (Gaussian) transport, is the artifact of the time-of-flight technique when the charge carrier generation takes place at the sample surface. All of the obtained results can be satisfactorily rationalized in terms of the Rose-Fowler-Weisberg model with a uniform set of parameters of the model. Such an approach is compatible with the basic concepts of the radiation chemistry of condensed phase (the Onsager theory and the Langevin recombination mechanism), structural features of a disordered medium (transport zone, structural traps), and rotational diffusion of small molecules or their molecular groups in vitrified polymers.     

Electrical properties of electrochemically doped organic semiconductors using light-emitting electrochemical cells

We present a study of the electrical properties of electrochemically doped conjugated polymers using polymeric light-emitting electrochemical cells (PLECs) and interpreting the results according to a phenomenological model (PM) which assumes that, above the device turn-on voltage, the bulk transport properties of the doped organic semiconductor are responsible for the main contribution to the whole device conductivity. To confirm the predictions of this model, the dependence of the conductivity of PLECs with different parameters is evaluated and compared with the behavior expected for a doped semiconducting polymeric material. The organic semiconductor doping level, the blend concentration of organic semiconducting molecules, the device thickness, the charge carrier mobility, and the temperature are the parameters varied to perform this analysis. We observed that the device conductivity is independent of the active layer thickness, weakly dependent on the temperature, but strongly dependent on the semiconductor doping level, on the semiconductor fraction in the blend, and on the intrinsic charge carrier mobility. These results were well described by the variable range hopping (VRH) model, which has been widely employed to describe the charge transport in doped semiconducting polymeric materials, confirming the prediction of the phenomenological model. The current analysis demonstrates that PLECs are a suitable system for studying, in situ, the electrochemical doping of semiconducting polymers, permitting the evaluation of material properties as, for instance, the density of electronic charge carriers (and, consequently, the ionic charge carrier concentration) necessary to achieve the maximum electrochemical doping level of the organic semiconductor.     

Correlation of charge transport with structural order in highly ordered melt‐crystallized poly(3‐hexylthiophene) thin films

A series of well‐defined poly(3‐hexylthiophene)s (P3HT) of different molecular weight (MW) and high regioregularity was investigated for charge transport properties in as‐cast and melt‐crystallized films. The semicrystalline structure of the P3HT was characterized by X‐ray scattering and Atomic force microscopy. Crystallization by cooling from the melt led to a substantial increase in crystallinity and a stronger alignment of the crystals in comparison to as‐cast films. The increase in crystallinity went along with an increase in hole mobility of up to an order of magnitude as measured by the space charge limited current method. Additionally, the hole mobility depended on the long period of P3HT lamellae and consequently on the MW. In compliance with the long period, the charge carrier mobility first increased with the MW before decreasing again at the onset of chain folding. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2013 , 51, 943–951     

Charge transport and optical properties of discotic liquid crystalline molecules THDDP and substituted THDP

The theoretical investigations have been carried out on the discotic liquid crystalline molecules, 2,3,6,7‐tetrakis‐hexyloxy‐9,16‐diaza‐dibenzo[a,c]phenazine (THDDP) and different substituted 2,3,6,7‐tetrakis‐hexyloxy‐dibenzo[a,c]phenazine (THDP) to study their charge transport and optical properties. The key parameters of charge transport such as charge transfer integrals and site energies have been calculated from the matrix elements of Kohn‐Sham Hamiltonian. The reorganization energy for the presence of excess charge and the rate of charge transfer calculated from Marcus theory have been used to find the mobility of the charge carrier in the studied molecules. The results show that the substitution and stacking angle change strongly affect the charge carrier mobility in π‐stacked THDDP and substituted THDP molecules. Molecular dynamics simulations have been performed to find the most favorable conformation. The time‐dependent density functional theory (TDDFT) calculations reveal that for these molecules the different substitutions does not alter the main features of optical properties and the molecules may be used as blue light emitters. © 2011 Wiley Periodicals, Inc. Int J Quantum Chem, 2011     

Electron transport in CaMnO3 − δ at elevated temperatures: a mobility analysis

The drift mobility of electron charge carriers in oxygen non-stoichiometric manganite CaMnO_3???δ was calculated by combining the total electrical conductivity and oxygen non-stoichiometry data at 700–950 °С and oxygen partial pressure varying between 10^?6 and 1 atm. The carrier concentration changes with pressure and temperature were obtained with the help of the earlier-developed defect model involving reactions of oxygen exchange and thermal excitation of manganese sites. The activation energy for mobility is found to increase with oxygen non-stoichiometry. High-temperature electron transport properties of the manganite CaMnO_3???δ can be explained in terms of activated jumps of n-type small polarons in adiabatic regime. The relatively small mobility of charge carriers is explained by strong localization of polarons on manganese sites.     

Charge carrier transport in poly[methyl(phenyl)silylene]: the effect of additives

Poly[methyl(phenyl)silylene], PMPSi, was doped with compounds of the electron acceptor type. The charge carrier mobility increases with increasing electron affinity of the acceptors having zero dipole moments. At the same time the energy distribution of hopping states narrows. On the other hand, the hole drift mobility is influenced by the dipole moment of the dopand. The electrostatic charge carrier‐dipole interaction causes a broadening of the energy distribution of transport states which results in a decrease in the charge carrier mobility. The charge carrier transport can be explained by the disordered polaronic theory, according to which the activation energy of charge carrier mobility has contributions based on the dynamic disorder, i.e. the polaronic barrier, and on the static disorder, i.e. the variation of the energy of transport states as a result of the environment. Copyright © 2001 John Wiley & Sons, Ltd.     

Polarization time effect on PMMA space-charge relaxation by TSDC

The effect of the polarization time in the formation of the PMMA space charge relaxation has been studied. The study has been carried out by thermally stimulated depolarization currents of electrets formed by windowing polarization. The results obtained have been fitted to the general kinetic order model, and they are consistent with the existence of a space-charge polarization mechanism with the kinetic order of 1.14. The intensity of the peak maxima results in being a good indicator of the trapped carrier number evolution. For high temperatures and high electrical fields the saturation of this mechanism is achieved faster, which is attributed to a carrier mobility increase with these parameters. Finally, a compensation law has been found for space-charge-relaxation in PMMA. © 1998 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 36: 1971–1980, 1998