Thermal Expansion Anomaly and Spontaneous Magnetostriction of Y2Fe14Al3 Compound

The structure and magnetic properties of Y2Fe14Al3 compound are investigated by means of x-ray diffraction and magnetization measurements. The Y2Fe14Al3 compound has a hexagonal Th2Ni17-type structure. Negative thermal expansion is found in Y2Fe14Al3 compound in the temperature range from 403 to 491K by x-ray dilatometry. The coefficient of the average thermal expansion is α^- = -2.54Х 10^-5 K^-1. The spontaneous magnetostrictive deformations from 283 to 470 K are caJculated by means of the differences between the experimental values of the lattice parameters and the corresponding values extrapolated from the paramagnetic range. The result shows that the spontaneous volume magnetostrictive deformation ωs decreases from 5.74 × 10^-3 to nearly zero with temperature increasing from 283 to 470K, the spontaneous linear magnetostrictive deformation λc along the c-axis is larger than the spontaneous linear magnetostrictive deformation λa in basal-plane in the same temperature below 350 K.     

Raman and X-Ray Investigation of Pyrope Garnet （Mg0.76Fe0.14Ca0.10）3Al2Si3O12 under High Pressure

The compressional behavlour of natural pyrope garnet is investigated by using angle-dlspersive synchrotron radiation x-ray diffraction and Raman spectroscopy in a diamond anvil cell at room temperature. The pressureinduced phase transition does not occur under given pressure. The equation of state of pyrope garnet is determined under pressure up to 25.3 GPa. The bulk modulus KTO is 199 GPa, with its first pressure derivative K′TO fixed to 4. The Raman spectra of pyrope garnet are studied. A new Raman peak nearly at 743 cm^-1 is observed in a bending vibration of the SiO4 tetrahedra frequency range at pressure of about 28 GPa. We suggest that the new Raman peak results from the lattice distortion of the SiO4 tetrahedra. All the Raman frequencies continuously increase with the increasing pressure. The average pressure derivative of the high frequency modes （650-1000 cm^-1） is larger than that of the low frequency （smaller than 650 cm^-1）. Based on these data, the mode Grǖneisen parameters for pyrope are obtained.     

Improvement of Atomic-Layer-Deposited Al2O3/GaAs Interface Property by Sulfuration and NH3 Thermal Nitridation

Fermi level pinning at the interface between high-h gate dielectric and GaAs induced by unstable native oxides is a major obstacle for high performance GaAs-based metal-oxide-semiconductor （MOS） devices. We demonstrate the improved Al2O3/GaAs interracial characteristics by （NH4）2S immersion and NH3 thermal pretreatment prior to A1203 deposition. X-ray photoelectron spectroscopy （XPS） analysis confirms that sulfuration of GaAs surface by （NH4 ）2S solution can effectively reduce As-O bonds while Ga-O bonds and elemental As still exist at Al2O3 /GaAs interface. However, it is found that N incorporation during the further thermal nitridation on sulfurated GaAs can effectively suppress the native oxides and elemental As in the sequent deposition of Al2O3. Atomic force microscopy （AFM） shows that the further thermal nitridation on sulfurated GaAs surface can also improve the surface roughness.     

Anomalies in low-temperature lattice parameters of ErFeO3 and ErAlO3 single crystals: correlation with magnetic properties

The paper presents the results of an experimental study of thermal expansion of isostructural orthorhombic ErFeO₃ and ErAlO₃ single crystals. Changes of lattice parameters have been investigated by X-ray measurements in the 10-300 K temperature range. Above ∼150 K, experimental results correspond well to the phonon mechanism. At low temperatures distinct anisotropic anomalies were observed in both compounds; and a correlation with the magnetic properties of the relevant ions is noted.     

Structural phase transitions in ‘hcp’ C70 single-crystals

The thermal expansion of vapor-grownC ₇₀ single crystals ahs been investigated using high-resolution capacitance dilatometry from 5–380 K. Measurements were made both parallel and perpendicular to the hexagonalc-axis. Three first-order phase transitions which we associate with the consecutive disordering of theC ₇₀ molecules are observed upon heating at 280 K (long-axis spinning), 300 K (long-axis precession) and 355 K (quasi-free rotation), respectively. The highest-temperature transition exhibits a very large (50 K) thermal hysteresis. Powder and single-crystal X-ray diffraction show that the crystals are predominantly hexagonal-close-packed (HCP) with an idealc/a1.63 above 360 K andc/a1.84 at 295 K.     

Thermal expansion measurements of the quasi-one-dimensional conductor K0.30MoO3

The charge density wave (CDW) dynamics of the quasi-one-dimensional conductor K_0.30MoO₃ shows two different regimes depending on the temperature: a strongly damped CDW motion above ∼50 K and CDW motion with almost no damping below ∼50 K. In a search for a characterization of this CDW behaviour, we performed thermal expansion measurements on K_0.30MoO₃ single crystals in the temperature range 4-250 K. In addition to the anomaly observed at the Peierls transition at 180 K along the [102] direction, an anomaly is observed at ∼50 K along the [−201] and [102] directions. The results are discussed in relation with the change in the CDW rigidity at ∼50 K.     

Synthesis and physical properties of negative thermal expansion materials Zr1−xMxW2O8−y (M=Sc, In, Y) substituted for Zr(IV) sites by M(III) ions

Zr_1−xM_xW₂O_8−y (M=Sc, In and Y) solid solutions substituted up to x=0.04 for Zr(IV) sites by M(III) ions were synthesized by a solid-state reaction. X-ray diffraction experiments from 90 to 560 K revealed that all solid solutions had a cubic crystal structure and showed negative thermal expansion coefficients. The lattice parameters of Zr_1−xM_xW₂O_8−y were smaller than that of ZrW₂O₈ probably due to oxygen defects, though the ionic radii of substituted M³⁺ ions were larger than that of Zr⁴⁺. Order-disorder phase transition temperatures of the substituted samples drastically decreased in the order of Y, In and Sc compared to the percolation theory, and decreased with increasing M content.     

CDW-induced negative thermal expansion in two-dimensional conductor η-Mo4O11

Two-dimensional oxide η-Mo₄O₁₁ exhibits almost isotropic thermal expansion in the normal phase, while anisotropic negative thermal expansion (NTE) in the charge density wave (CDW) phase below T_c1=105 K, where a remarkable anomalous expansion occurs along the a-axis. The incommensurate nesting vector along the b-axis is independent of temperature, q₁=(0.000(1) 0.2335(1) 0.0000(5)). We propose that the CDW-induced NTE occurs as a result of the structural relaxation of the MoO₆ octahedra layers along the stacking direction with the aid of the open spaces around the MoO₄ tetrahedra.     

Young＇s Modulus Anisotropy and Magnetomechanical Damping of [110] Oriented Tb0.3Dy0.7Fe1.95 Alloy

The △E effect and the magnetoelastic or magnetomechanical damping of vibrations in [110] oriented Tbo.aDyo.TFe1.95 alloy are experimentally studied by quasi-static stress-strain measurements under various constant magnetic fields between 0 and 3000 Oe, where stress ranges are taken from about 0 to -25, -50, -75 MPa. The linear stressstrain behaviour is obtained when the magnetic field is high enough （9000 Oe）. However, the modulus E varies with the angle θ between the compressive stress and magnetic field （9000 Oe）, which shows that the anisotropy of the modulus E is related to the magnetic domain distribution.     

Structure Stability of LaAlO3 Thin Films on Si Substrates

A series of amorphous and single-crystalline LaAlO3 （LAO） thin films are fabricated by laser molecular-beam epitaxy technique on Si substrates under various conditions of deposition. The structure stability of the LAO films annealed in high temperature and various ambients is studied by x-ray diffraction as well as high-resolution transmission electron microscopy. The results show that the epitaxial LAO films have very good stability, and the structures of amorphous LAO thin films depend strongly on the conditions of deposition and post-annealing. The results reveal that the formation of LAO composition during the deposition is very important for the structure stability of LAO thin films.     

Temperature Dependence of the Fluorescence Emission Intensity of Eu/TiO2 Nanocrystals

The samples of europium ions doped titanium dioxide （Eu^3＋/TiO2） nanocrystals are synthesized by a modified sol-gel method with hydrothermal treatment. The x-ray diffraction and scanning electron microscopy are used to characterize the sample. The temperature-dependent fluorescence emission effect of Eu^3＋-doped samples is investigated. It is found that under the excitation of 514.5nm light, the emission intensity of Eu^3＋ reaches a maximum value at 450K among various Eu^3＋ dopant concentrations in Eu^3＋ /TiO2 nanocrystals. The variation of the emission intensity may be attributed to the photon-assist absorption and the temperature-quenching effect.     

Photoluminescence investigations on the nanoscale phase transition in Pb(Mg1/3Nb2/3)O3

The temperature dependence of the photoluminescence spectra of the relaxor ferroelectric Pb(Mg_1/3Nb_2/3)O₃ has been reported. The temperature behaviours of the 1.57, 1.67 and 1.73 eV bands indicate a phase transition at 110 K. This is attributed to a structural phase transition in the charged nanoshell. Analysis of the temperature dependence of 1.67 eV band intensity with a thermal quenching model indicated the existence of a phonon mode at 1153 cm⁻¹. This mode is identified in the Raman spectra measurement. The intensity of the 1.73 eV band showing an anomalous behaviour at 210 K is attributed to a transition from a crystalline phase to an amorphous phase in the charged nanoshell.     

In-Situ High Pressure Raman Spectrum and Electrical Property of PbMoO4

In-situ high pressure Raman spectra and electrical conductivity measurements of scheelite-structure compound PbMoO4 are presented. The Raman spectrum of PbMoO4 is determined up to 26.5 GPa on a powdered sample in a diamond anvil cell （DAC） under nonhydrostatic conditions. The PbMoO4 gradully experiences the trans- formation from the crystal to amorphous between 9.2 and 12.5 GPa. The crystal to amorphous transition may be due to the mechanical deformation and the crystalographic transformation. Furthermore, the electrical conductivity of PbMoO4 is in situ measured accurately using a microcircuit fabricated on a DAC based on the van der Pauw method. The results show that the electrical conductivity of PbMoO4 increases with increases of pressure and temperature. At 26.5 GPa, the electrical conductivity value of PbMoO4 at 295K is 1.93 - 10-4 S/cm, while it raises by one order of magnitude at 430K and reached 3.33 - 10-3 S/cm. However, at 430K, compared with the electrical conductivity value of PbMoO4 at 26.5 GPa, it drops by about two order magnitude at 7.4 GPa and achieves 2.81 × 10^-5 S/cm. This indicates that the effect of pressure on the electrical conductivity of PbMoO4 is more obvious than that of temperature.     

Valence fluctuation in Ce2Co3Ge5 and crystal field effect in Pr2Co3Ge5

Polycrystalline samples of ternary rare-earth germanides R₂Co₃Ge₅ (R=La, Ce and Pr) have been prepared and investigated by means of magnetic susceptibility, isothermal magnetization, electrical resistivity and specific heat measurements. All these compounds crystallize in orthorhombic U₂Co₃Si₅ structure (space group Ibam). No evidence of magnetic or superconducting transition is observed in any of these compounds down to 2 K. The unit cell volume of Ce₂Co₃Ge₅ deviates from the expected lanthanide contraction, indicating non trivalent state of Ce ions in this compound. The reduced value of effective moment (μ_eff≈0.95 μ_B) compared to that expected for trivalent Ce ions further supports valence-fluctuating nature of Ce in Ce₂Co₃Ge₅. The observed temperature dependence of magnetic susceptibility is consistent with the ionic interconfiguration fluctuation (ICF) model. Although no sharp anomaly due to a phase transition is seen, a broad Schottky-type anomaly is observed in the magnetic part of specific heat of Pr₂Co₃Ge₅. An analysis of C_mag data suggests a singlet ground state in Pr₂Co₃Ge₅ separated from the singlet first excited state by 22 K and a doublet second excited state at 73 K.     

Thermal expansion behaviors of hcp and fcc Co nanowire arrays

The lattice parameters of as-prepared and annealed Co nanowires with hcp and fcc structures have been measured using the in situ high-temperature x-ray diffraction method. The hcp and fcc Co nanowires have been fabricated within the porous anodic alumina membranes by a direct-current electrodeposition technique. The results indicate that the variational quantity of the interplanar spacing for hcp Co nanowire arrays is bigger than that for fcc Co nanowire arrays in spite of as-prepared and annealed samples. The structural difference between hcp and fcc Co nanowires results in the different thermal expansion behaviors.     

Dehydrogenation at the Fe/Lu2O3 interface upon rapid thermal annealing

The interfaces between ferromagnetic electrodes and tunnel oxides play a crucial role in determining the performances of spin-based electronic devices, such as magnetic tunnel junctions. Therefore, a deep knowledge of the structural, chemical, and magnetic properties of the buried interfaces is required. We study the influence of rapid thermal annealing treatments up to 500 °C on the interfacial properties of the Fe/Lu₂O₃ system. As-grown stacks reveal the presence of hydrogenated Fe-Lu-H intermetallic phases at the Fe/Lu₂O₃ interface most likely due to the H absorption on the Lu₂O₃ surface upon exposure to air and/or to the oxide growth. The annealing treatments induce remarkable changes of the structural, chemical, and magnetic properties at the interface, as evidenced at the atomic scale by the sub-monolayer sensitivity of conversion electron Mössbauer spectroscopy. The use of complementary techniques such as X-ray diffraction, time-of-flight secondary ion mass spectrometry, and in situ X-ray photoelectron spectroscopy, confirms that the main effect of the annealing is to gradually promote the dehydrogenation at the Fe/Lu₂O₃ interface.     

Effect of illumination on negative linear expansion of TlGaSe2 layered crystals

Effect of illumination on negative thermal expansion of TlGaSe₂ crystals has been investigated. Strong trasformation of negative linear expansion coefficient has been observed after the illuminations. It is supposed that two main mechanisms are responsible for observed effect: formation of photoelectret states and reverse piezoelectric effect. The electronic nature of negative linear expansion of TlGaSe₂ crystals has been proved for the first time.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

Memory Effect of Metal--Insulator--Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics

Charge trapping characteristics of the metal-insulator-silicon （MIS） capacitors with Si02/HfO2//A12O3 stacked dielectrics are investigated for memory applications＇. A capacitance-voltage hysteresis memory window as large as 7.3 V is achieved for the gate voltage sweeping of ±12 V, and a fiat-band voltage shift of 1.5 V is observed in terms of programming under 5 V and I ms. Furthermore, the time- and voltage-dependent charge trapping characteristics are also demonstrated, the former is related to charge trapping saturation and the latter is ascribed to variable tunnelling barriers for electron injecting and discharging under different voltages.