Optical and transport properties of δ-doped pseudomorphic AlGaAs/InGaAs/GaAs structures

We investigate the effects of spacer layer thickness on the optical and transport properties of the n-type-doped pseudomorphic Al_0.30Ga_0.70As/In_0.15Ga_0.85As / GaAs structures. A-doped AlGaAs/InGaAs/GaAs structure with a 6nm spacer layer yields a sheet carrier concentration of 1.5×10¹² cm^–2 at 77K with electron mobility of 6.4×10³ cm²/Vs, 3.11×10⁴ cm²/Vs, and 3.45×10⁴ cm²/Vs at room temperature, 77 and 20K, respectively. The effects of the different scattering mechanisms on luminescence linewidth and electron mobility have also been discussed.     

Pulsed laser crystallization of hydrogen-free a-Si thin films for high-mobility poly-Si TFT fabrication

The possibility to fabricate high-mobility polysilicon TFTs by nanosecond pulsed laser crystallization of unhydrogenated amorphous Si thin films has been investigated. Two types of lasers have been used: a large area ( 1 cm²) single ArF excimer laser pulse and a small diameter ( 100 m) frequency-doubled Nd:YAG laser beam, working in the scanning regime. Processed films have been characterized in detail by different optical and microscopic techniques. Device performances indicate that the best results are achieved with the excimer laser leading to high mobility values (up to 140 cm²/Vs) which are much larger than in polysilicon TFTs fabricated onto the same quartz substrates by low-temperature thermal (630° C) crystallization of amorphous Si films (_fe55 cm²/Vs).     

Optical characterization of laser-induced crystallized silicon films

Optical absorption coefficient spectra of thin silicon films were precisely investigated using a simple reflectance system with total reflectance mirrors placed on the rear side of samples in order to cancel an interference effect in a range between 1.1 eV and 3 eV. The absorption coefficient decreased according to crystallization as the laser energy increased and it got similar to that of single crystalline silicon in the range of 1.7 eV 3 eV. However, the absorption coefficient was higher than 10² cm^–1 in the photon energy lower than 1.3 eV. This probably results from band tail states caused by defect states localized at grain boundaries in the crystallized films. 2.5%-phosphorus doped laser crystallized silicon films had a high optical absorption coefficient ( > 10⁴ cm^–1) in the low photon energy range (1.1 eV 1.7 eV) caused by free carriers produced from the dopant atoms activated in the silicon films. The experimental results gave the carrier density of 1.3 × 10²¹ cm³ and the carrier mobility of 20 cm²/Vs.     

Investigation of laser-annealed antimony implanted Si by ion backscattering and channeling and structure analysis

Rutherford backscattering (RBS), ion channeling and surface studies were done to investigate diffusion of ion implanted Sb in Si. Clean and polished Si was implanted by 190KeV Sb⁺ ions to a dose of 2.3×10¹⁵cm^–2. Laser annealing was carried out by a single 10 J/cm² laser pulse from a Nd: glass (7 ns FWHM) laser. Concentration profiles of Sb as a function of depth and dopant substitutionalities were measured by helium-ion backscattering and channeling. The laser shot resulted in melting of the central portion of the spot. A honey comb type surface morphology was found by SEM analysis. Dektak surface profiles showed a crater of 600 nm depth. One-dimensional heating calculations show that dopant diffusion depths, after consideration of simultaneous evaporation, can be 400 nm, whereas experiments indicate larger depths (1 m). Calculated crater depth is roughly twice the experimental value. Measured depths are much larger than calculated by heat diffusion and indicate that regrowth and distribution of Sb has been modified by convection in the melt. We estimate good substitutionality up to 4 J/cm² and discuss energy density dependence for such high-energy density laser pulses.     

Pulsed laser synthesis of titanium silicides using a Q-Switched Nd: Glass laser

Titanium films 120 nm thick deposited on single-crystalline silicon (c-Si) as well as poly-Si/SiO₂/c-Si substrates were subjected to Nd: glass laser irradiation. Laser fluences of 1,1.5, and 2 J/cm² were used at the pulse duration of 30 ns. From RBS analysis it follows that on c-Si substrate titanium suicide is formed using one pulse of 1.5 J/cm² energy density. On the substrate with surface overlayers lower fluence (1 J/cm²) was sufficient. Under these conditions the sheet resistance of the samples decreased from the initial value 5 / to 2–3 /. The smaller threshold density of energy for suicide formation in Ti/polySi/SiO₂/c-Si structure is shown to be a consequence of the SiO₂ underlayer, which is a poorer heat conductor than silicon. The experimental results of the suicide synthesis are in semi-quantitative accordance with the numerical computations of the temperature vs time evolution and depth temperature distribution in our samples.     

Potential Confinement of a High Density Plasma in the GAMMA 10 Tandem Mirror

Potential confinement was demonstrated experimentally under various electron cyclotron resonance heating (ECRH) scenarios. The particle confinement time and the plasma confining potential increased with ECRH power. The plug potential formation by means of only _ce ECRH was studied by Monte-Carlo simulation. Potential confinement experiments have advanced in higher density region up to 4×10¹² cm^-3. The higher density plasma was obtained by high frequency ICRF heating and recently installed neutral beam injector in the central cell. Studies of scaling relation of the potential confinement with respect to the plasma density have started with the high density plasma.     

Growth of very large grains in polycrystalline silicon thin films by the sequential combination of vapor induced crystallization using AlCl3 and pulsed rapid thermal annealing

Metal-induced crystallization method is one of the favorable non-laser crystallization methods for thin-film transistors in large-area displays. However, it is necessary to reduce metal contamination in the film to lower leakage current for the device applications. A new two-step crystallization method, consisting of a nucleation step by AlCl₃ vapor-induced crystallization and a grain growth step by a pulsed rapid thermal annealing, has been proposed to increase the grain size and reduce the residual metal contamination in crystallized poly-Si films. The grain size of the poly-Si film crystallized by the VIC + PRTA two-step crystallization process was as large as 70 μm. Furthermore, the Al concentration in the poly-Si film was reduced by two orders of magnitude from 1 × 10²⁰ cm^?3 by VIC only process to 1.4 × 10¹⁸ cm^?3 by the two-step process. As a result, the minimum leakage current of poly-Si TFTs using the poly-Si film prepared by the two-step process was reduced from 1.9 × 10^?10 A/μm to 2.8 × 10^?11 A/μm at a drain voltage of 5 V, without carrier mobility degradation.     

The influence of graphite boat material on the purity of LPE InGaAs

This paper describes the purity of LPE InGaAs layers grown in graphite boats, machined from various graphite materials. The influence of the material is clearly visible if the growth solution is sufficiently pure. Carrier concentrations n<2×l0¹⁵ cm^–3 and mobilities(77 K)> 38000 cm²/Vs are routinely achieved for suitable graphite materials already from the third run of a new large boat applying a prebake of only 15 h. Small boats yield even better results (n=0.5×10¹⁵ cm^–3 and(77 K)=49500 m²/Vs). The sticking of In-rich solutions to the graphite does not depend on the material but is solely dependent on the surface roughness. The problem of graphite particle abrasion is discussed.     

Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel

a-IGZO films were deposited on Si substrates by d.c sputtering technique with various working power densities (p_d) in the range of 0.74–2.22 W/cm². The correlation between material properties and their effects on electrical stability of a-IGZO thin-film transistor (TFTs) was studied as a function of p_d. At a p_d of 1.72 W/cm² a-IGZO film had smoothest surface roughness (0.309 nm) with In-rich and Ga-poor cation compositions as a channel. This structurally ordered TFTs exhibited a high field effect mobility of 9.14 cm²/Vs, a sub-threshold swing (S.S.) of 0.566 V/dec, and an on–off ratio of 10⁷. Additionally, the V_th shift in hysteresis loop is almost eliminated. It was shown that the densification of the a-IGZO film resulted in the reduction of its interface trap density (1.83 × 10¹² cm^?2), which contributes for the improvement in the electrical and thermal stability.     

Laser-induced free-carrier absorption in Si single crystal

The transmitted energy density in thin single Si crystal, wafers is measured at=1.06 m as a function of the incident energy density for a Nd laser pulse of 30 ns duration. Non-linear effects begin to become important at about 0.3 J/cm². The contribution due to free-carriers is separated from the interband one by using measurements made at low energy density and at different sample temperatures in the 20°–150 °C range. The time dependence of the free-carrier concentration and of the lattice temperature is computed for different values of the Auger constant. The experimental data in the 0.2–2.5 J/cm² energy density range are fitted with an Auger constant of 10^–30 cm⁶s^–1.Work supported in part by M.P.I. and G.N.S.M.-C.N.R.     

Carrier concentration in modulation-doped AlGaAs-GaAs heterostructures

Single-interface modulation-doped AlGaAs-GaAs heterostructures have very high mobilities if thick undoped spacers are introduced between the Si donors and the twodimensional electron gas. Electron densities are limited to values below 10¹² cm^–2. Higher channel densities are desirable for device applications and can be obtained by confining the electrons in quantum wells doped from both sides. Single quantum-well structures have been grown with sheet carrier densities exceeding 3×10¹² cm^–2 at 300 K and 77 K mobilities of 54,000 cm²/Vs. Single quantum wells doped from one side only with low electron concentrations of 2×10¹¹ cm^–2 have 4.2 K mobilities of 200,000cm²/Vs.     

Control of electrical properties and gate bias stress stability in solution-processed a-IZO TFTs by Zr doping

Zr-doped indium zinc oxide (IZO) thin film transistors (TFTs) are fabricated via a solution process with different Zr doping ratios. The addition of Zr suppressed the carrier concentration in the IZO films, which was confirmed by Hall Effect measurements. As the amount of Zr was increased in the oxide active layer of TFTs, the subthreshold swing (S.S) reduced, the ON/OFF ratio improved, and the threshold voltage (V_th) shifted positively. Moreover, the starting points of the ON state for TFTs near the point zero gate voltage could be controlled by the addition of Zr. The 0.3% Zr-doped IZO TFT exhibited a high saturation mobility of 7.0 cm² V⁻¹ s⁻¹, ON/OFF ratio of 2.6 × 10⁶ and S.S of 0.57 V/decade compared the IZO TFT with 10.1 cm² V⁻¹ s⁻¹, 1.7 × 10⁶ and 0.75 V/decade. The Zr effect of the gate bias stability was examined. Zr-doped IZO TFTs were relatively unstable under a positive bias stress (PBS), whereas they showed good stability at a negative bias stress (NBS). The gate bias stability of the oxide TFTs were compared with the extracted parameters through a stretched-exponential equation. The characteristic trapping time under NBS of 0.3% Zr-doped IZO TFTs was improved from 8.3 × 10⁴ s for the IZO TFT to 3.1 × 10⁵ s.     

Silver diffusion and precipitation of nanoparticles in glass by ion implantation

Silver particles in soda-lime glass, less than 10 nm in size, were prepared by ion implantation. The implantation dose was in the range of 0.5 to 2×10¹⁶ Ag ions/cm² and the beam current density was varied from 0.5 to 2A/cm². Here, the beam current density strongly influences ion diffusion and particle precipitation as well as compressive stress generation around the particles due to thermal effects resulting from the deceleration of silver ions. Stress relaxation can be achieved by increased dose rates or thermal processing at elevated temperatures. Based on RBS and HREM results, a possible route to homogeneous distribution of Ag nanoparticles within the glass is discussed with respect to their interesting optical properties.     

High performance Zn–Sn–O thin film transistors with Cu source/drain electrode

Zn–Sn–O (ZTO) thin film transistors (TFTs) were fabricated with a Cu source/drain electrode. Although a reasonably high mobility (μ_FE) of 13.2 cm²/Vs was obtained for the ZTO TFTs, the subthreshold gate swing (SS) and threshold voltage (V_th) of 1.1 V/decade and 9.1 V, respectively, were inferior. However, ZTO TFTs with Ta film inserted as a diffusion barrier, exhibited improved SS and V_th values of 0.48 V/decade and 3.0 V, respectively as well as a high μ_FE value of 18.7 cm²/Vs. The improvement in the Ta‐inserted device was attributed to the suppression of Cu lateral diffusion into the ZTO channel region. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Laser annealing of GaAs dual implanted with Si and P ions

Laser annealing of SI(100) GaAs:Cr implanted either with Si⁺ ions (150 keV, 6×10¹³-1×10¹⁵cm^–2) or dual implanted with Si⁺ ions (150 keV, 6×10¹⁴–1×10¹⁵cm^–2) and P⁺ ions (160 keV, 1×10¹⁴–1×10¹⁵cm^–2) has been examined using backscatteringchannelling technique and via electrical measurement of Hall effect. It has been found that at laser energy densities 0·8 J cm^–2 a full recovery of the sample surface occurs. In dual implanted samples (1×10¹⁵ Si⁺ cm^–2+1×10¹⁵P⁺cm^–2) up to 46% of Si atoms become electrically active after the laser annealing. Resultant Hall mobility of carriers is, however,lower than that obtained after common thermal annealing.The authors are pleased to take the opportunity of thanking Professor M. Kubát for his encouragement and continuous support. Accelerator staff is gratefully acknowledged for its assistance in the course of experiments.     

Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphere

Nominally undoped InP wafers have been annealed in a phosphorus atmosphere under a pressure of about 5 bar at temperatures of 900 °C for about 80 h. It was found that the electrical properties of the samples changed considerably after this treatment. A room temperature resistivity of up to 2×10⁷cm (semi-insulating behaviour) was obtained in the bulk of the samples. The resistivity finally obtained depends on the starting carrier concentration of the untreated samples. The Hall coefficient and Hall mobility have been measured up to 600 °C. The results can be interpreted in terms of a deep electronic level (E _A=0.63 ... 0.65 eV below the conduction band). The Hall coefficient was always found to be negative resulting in a Hall mobility of 1.4 to 4.9×10³ cm²/Vs. The highest resistivity in nominally undoped bulk InP so far reported in the literature [1] was =3.6 × 10⁵cm. Therefore, this paper demonstrates for the first time that a really semi-insulating behaviour of >10⁷ cm can be achieved for bulk InP with the purity of nominally undoped material (10¹⁵ to 10¹⁶cm^–3).     

Absorption of subpicosecond ultraviolet laser pulses in high-density plasma

The absorption of 250 fs KrF laser pulses incident on solid targets of aluminum, copper and gold has been measured for normal incidence as a function of laser intensity in the range of 10¹²–10¹⁴ W cm^–2 and as a function of polarization and angle of incidence for the intensity range of 10¹⁴–2.5×10¹⁵ W cm^–2. As the intensity increases from 10¹² W cm^–2 the reflectivity at normal incidence changes from the low-intensity mirror reflectivity value to values in the range of 0.5–0.61 at 10¹⁴ W cm^–2. For this intensity maximum absorption of 63–80% has been observed for p-polarized radiation at angles of incidence in the range of 54°–57°, increasing with atomic number. The results are compared with the expected Fresnel reflectivity from a sharp vacuum-plasma interface with the refractive index given by the Drude model and also to numerical calculations of reflectivity for various scale length density profiles. Qualitative agreement is found with the Fresnel/Drude model and quantitative agreement is noticed with the numerical calculations of absorption on a steep density profile with normalized collision frequencies, v/, in the range of 0.13–0.15 at critical density and normalized density gradient scale lengths, L/₀, in the range of 0.018–0.053 for a laser intensity of 10¹⁴ W cm^–2.At 2.5×10¹⁵ W cm^–2 a small amount of preplasma is present and maximum absorption of 64–76% has been observed for p-polarized radiation at angles of incidence in the range of 45°–50°.Dedicated to Prof. Dr. Rudolf Wienecke on the occasion of his 65^th birthdayOn leave from: Department of Electrical Engineering, University of Alberta, Edmonton, T6G 2G7, Canada     

Radiation-induced change of polyimide properties under high-fluence and high ion current density implantation

Polyimide (PI) films were implanted with 40-keV Ar⁺ and 80-keV Ar²⁺ ions in a fluence range of 5.0×10¹⁴–1.5×10¹⁷ cm^-2 at ion-current densities of 1–16 A/cm². It is shown that the conductivity of the samples rises with the ion-current density at a fixed fluence. Electrophysical parameters of the polyimide change stepwise with the implantation fluence when it exceeds a certain value. The change of electrical parameters of the implanted PI correlates with that of the optical and paramagnetic characteristics. The phenomenon of complete volatilisation of argon implanted with an energy of 40 keV due to surface heating and disordering under the high-power beam is found. It is shown that the change of ion charge and energy at constant beam-power density causes only a quantitative change in the polymer characteristics. A model of PI alteration and carbonised phase formation, taking into account the action of the high-power ion beam and the peculiarities of PI chemical structure, is developed to explain the observed effects. Implantation at high ion-current density can be suggested as an efficient practical means to control polymer conductivity and other parameters. PACS 61.80.Jh; 61.82.Pv; 72.80.Le; 76.30.Pk; 78.30.Jw; 81.05.Lg