Structural and electrical properties of CuGaSe2 thin films on GaAs substrates

CuGaSe₂ thin films with thicknesses in the range of 0.1 μm were deposited onto semiinsulating (111) A-oriented GaAs substrates by flash evaporation under controlled growth conditions. Epitaxial growth begins at a substrate temperature of T_sub = 835 K. Besides the chalcopyrite phase a hexagonal modification was observed in the range T_sub = 835 to 855 K. At T_sub ≧ 860 K the films have sphalerite structure. All epitaxial films were p-type conducting. Two acceptor levels with ionization energies of about 150 meV and 550 meV, respectively, were obtained from an analysis of electrical and photoluminescence measurements.     

Structural and electrical properties of CdS thin films evaporated onto GaAs substrates

CdS thin films on GaAs substrates are prepared by single source thermal evaporation under high vacuum conditions. Films on (111)A-oriented substrates have the wurtzite structure, whereas in the case of (1 1 1 )B-oriented substrates the sphalerite structure predominates. Depositing films on pre-annealed substrates a tetragonal phase with a composition near CdGa₂S₄ was found. The electron concentration in the CdS films is influenced by the substrate temperature, the growth rate of the films, and the substrate orientation.     

Structural and electrical properties of CuIn0.7Ga0.3Se2 epitaxial layers on GaAs substrates

Epitaxial layers of CuIn_0.7Ga_0.3Se₂ could be prepared by flash evaporation onto (111)A-oriented GaAs substrates in the substrate temperature range T_sub = 745 … 870 K. At T_sub = 745 … 820 K the films had the chalcopyrite structure, at T_sub = 820 … 845 K an additional pseudohexagonal phase was found. Indications to the presence of a sphalerite phase were found at high substrate temperatures. Films grown at T_sub ≦ 750 K were always n-type conducting and showed a largely pronounced impurity band conduction effect. At T_sub ≧ 860 K the films were always p-type conducting and two acceptor states with ionization energies of some 10⁻³ eV and of 125 … 140 meV were found.     

Influence of substrate orientation on the electrical properties of CuInSe2 epitaxial layers on GaAs substrates

The electrical properties of CuInSe₂ epitaxial layers on (111)A-, (110)-, and (100)-oriented GaAs substrates are investigated. At substrate temperatures T_sub ≧ 820 K the p-type conductivity observed is governed by an acceptor state with an ionization energy of about 110 meV independent of the substrate orientation. At T_sub ≦ 770 K three different acceptor states are found in dependence on the substrate orientation: 390 meV for (111)A-, 110 meV for (110)-, and a very shallow acceptor for (100)-oriented substrates. A possible correlation between these acceptor states and intrinsic defects is proposed.     

Growth and electrical properties of liquid phase epitaxial layers of GaxIn1-xP lattice-matched to GaAs substrates

From the measurement of the evaporation rate of phosphorus the favourable conditions for the layer growth were determined. Further, we have studied the influence of zinc and silicon on the growth and the morphology. The mobilities, the electron and hole concentrations in the temperature range from 77 to 300 K are presented. In the Si-doped samples we could not find a correlation between the silicon concentration in the melt and the donor concentrations in the layer. An estimation of the acceptor ionization energy in Zn-doped samples yields E_A = (15 ± 4) meV.     

Growth and electrical properties of flash evaporated AgGaTe2 thin films

Thin films have been prepared by flash evaporation technique of a stoichiometric bulk of AgGaTe₂ compound in vacuum and analysed using X‐ray diffraction, transmission electron microscopy, selected area diffraction and energy dispersive analysis of X‐rays. The effect of substrate temperature on the structural properties – grain size, film orientation, composition, and stoichiometry of the films have been studied. It was found that the polycrystalline, stoichiometric films of AgGaTe₂ can be grown in the substrate temperature range of 473K < Ts < 573K. The influence of substrate temperature (Ts) on the electrical characteristics‐ Resistivity, Hall Mobility, Carrier concentration of AgGaTe₂ thin films were studied. The electrical resistivity was found to decrease with increase in substrate temperature up to 573K and then increases. The variation of activation energy of AgGaTe₂ thin films were also investigated. The implications are discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth,structure, and stoichiometry of epitaxial Cu-III-VI2 films on CaF2 substrates

Thin films of CuInTe₂, CuInSe₂, CuInS₂, CuGaSe₂ and CuGaS₂ were deposited onto (111)-and (100)-oriented CaF₂ substrates by flash evaporation technique. Epitaxial growth occurs at substrate temperatures in the range from 750 to 900 K, dependent on the kind of film material. Contrary to the case of GaAs, GaP and Ge substrates there are always polycrystalline parts. The layers were found to be single phase and crystallizing in the chalcopyrite structure only. The composition of the films varied in dependence on the substrate temperature. In the range of about 700 K a nearly stoichiometric composition was found.     

Growth of epitaxial thin films of scandium nitride on 100-oriented silicon

A series of 100-oriented ScN films was grown under N-rich conditions on 100-oriented Si using different Sc fluxes. The ScN films grew in an epitaxial cube-on-cube orientation, with [0 0 1]_ScN//[0 0 1]_Si and [1 0 0]_ScN//[1 0 0]_Si, despite the high (11%) lattice mismatch between ScN and Si. The film grain size increases and the film ω-FWHM decreases with increasing Sc flux, but the film roughness increases. Films grown under similar conditions on 111-oriented Si resulted in mixed 111 and 100 orientations, indicating that the 100 orientation is favoured both due to texture inheritance from the substrate and due to the growth conditions used.     

Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

Epitaxial Ti₃GeC₂ thin films were deposited on 4° off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti₃GeC₂ films grow by lateral step-flow with {112?0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.     

Strain inhomogeneities in epitaxial BaFe2As2 thin films

Epitaxial BaFe₂As₂ thin films grown by pulsed laser deposition on spinel substrates with a thin iron buffer layer show strain‐induced superconductivity. Using high resolution electron backscatter diffraction in a scanning electron microscope very small orientation changes (≤ 0.2°) of the lattice and strain inhomogeneities on a length scale of few 100 nm or less were measured. Furthermore, partially strain relaxed areas were revealed. It was found, that the quality of the BaFe₂As₂ thin films crucially depends on the iron buffer layer.     

Synthesis and optical properties of CuInS2 thin films prepared by sulfurization of electrodeposited Cu‐In layers

The chalcopyrite CuInS₂ thin film was fabricated at 500 °C for 2 h by sulfurization of Cu‐In layers (as precursors) that were sulfurized in a glass tube with pure sulfur powder. The structural, morphological, and optical properties of CuInS₂ thin films are characterized using X‐ray diffraction (XRD), field‐emission scanning electron microscope (FE‐SEM), and UV/Visible/NIR spectrophotometer. The study of UV/Visible/NIR absorption shows the band gap energy value of CuInS₂ thin films is 1.5 eV. The XRD pattern shows the film is pure CuInS₂; no other peaks, such as CuS or CuIn₅S₈ were observed. Furthermore, the surface of the CuInS₂ film is compact characterized by FE‐SEM, which also shows the disappearance of CuS on the surface at 500 °C.     

The preparation and electrical properties of thin chalcogenide semiconductor films

Thin chalcogenide films from the GeTeAsSi system have been prepared using electron beam evaporation and R.F. sputtering techniques. The techniques are described in some details as it is believed that the deposition procedure has a significant on subsequent electrical switching behaviour.     

Dielectric and electrical properties of vacuum-deposited Didymium oxide thin films

Dielectric and electrical properties of sandwich structures of didymium oxide thin films of several thicknesses have been investigated. The variation of capacitance and dielectric dissipation factor (Tan δ) with frequency in these films have been studied. These studies have shown that at room temperature, the capacitance increases with decrease of frequency and the variation is more pronounced at low frequencies. With increase of frequency, the dissipation factor decreases. The increase of capacitance with decrease in frequency has been attributed to the space-charge polarisation and blocking of charge carriers at the electrodes. The effect of thickness on capacitance and Tan δ in these films have been studied. Current-Voltage characteristics (I—V) of sandwiched Al-didymium oxide-Al structures have been studied at room temperature. These characteristics showed that the breakdown voltage increases and the dielectric strength decreases with increase of oxide film thickness. Conductivity (σ) at room temperature have been calculated to understand the mechanism involved in the conduction process. These results indicated that the conduction in these films is due to Schottky barriers. Breakdown patterns obtained in these structures by the application of de voltage applied across the sandwich structures have been observed with the help of Carl-Zeiss, Jena, optical microscope. The photomicrographs of these breakdown patterns indicate that the type of breakdown in these structures may be single-hole breakdown and is proceeded by propagating breakdown.     

Influence of the graduated composition region on the properties of GaInAs epitaxial layers grown on GaAs substrates

The electrical properties of Ga_1-xIn_xAs layers (0 < x < 0.3) are investigated. The layers are grown on <111> oriented GaAs substrates. A transition layer is grown with an increasing indium content to decrease the mismatch of the lattice parameters of the substrate and the final layer. A special many-section crucible is used. In dependence on composition the decrease both of mobility and carrier concentration with the increase of compensation is observed. These facts are connected with the introducing of additional acceptors without donor concentration changes.     

Characterization of epitaxial group II fluoride films on (100)-oriented GaAs substrates by ion backscattering and channeling

Lattice matched (Ca, Sr)F₂ and related fluoride films grown on (100)GaAs substrates were investigated by Rutherford backscattering/Channeling. This technique allows the characterization of the 30–250 nm thick heteroepitaxial layers with respect to chemical composition, film thickness, interface roughness and crystalline perfection. The first flash evaporated GaAs/fluoride/GaAs structure are briefly reported.     

Structure and electrical resistance of thin scandium films (III). Study on electrical properties

The specific resistance-thickness of ScH_x (vacuum 10⁻⁵ to 5 · 10⁻⁶ Torr) and Sc films (vacuum 1 · 10⁻⁸ to 3 · 10⁻⁸ Torr) relationships have been obtained by keeping a record of a film resistance directly in the course of condensation. The results are discussed according to the theory FUCHS -SONDHEIMER (ScH_x, Sc) and MAYADAS -SHATZKES (Sc) assuming a diffuse scattering of the carriers (P = 0) on the external surface of the films. A mean free path of the current carriers is 188 to 355 Å (T ⋍ 300 K) for ScH_x and 400 Å with grain-boundary scattering parameter from 0.1 to 0.3 for Sc. The temperature dependence of specific resistivity of Sc films was obtained in the interval from 300 to 650 K during the annealing in vacuum 5 · 10⁻⁹ Torr.     

Low temperature effects on electrical and optical properties of TTBNc thin films

Electrical and optical properties of thermally evaporated air annealed Tetra-Tert-Butyl 2,3 Naphthalocyanine (TTBNc) thin films are studied. From the Arrhenius plot, the thermal activation energy is calculated for intrinsic and extrinsic region. Different hopping conduction parameters are tabulated using the Variable Range Hopping (VRH) model in the low temperature region. The studies on the optical absorption spectra lead to the determination of optical band gap energy and Urbach’s energy of TTBNc thin films. Also the temperature dependence of steepness parameter is explained.     

Structural features of epitaxial NiFe2O4 thin films grown on different substrates by direct liquid injection chemical vapor deposition

NiFe₂O₄ (NFO) thin films are grown on four different substrates, i.e., Lead Zinc Niobate–Lead Titanate (PZN–PT), Lead Magnesium Niobate–Lead Titanate (PMN–PT), MgAl₂O₄ (MAO) and SrTiO₃ (STO), by a direct liquid injection chemical vapor deposition technique (DLI-CVD) under optimum growth conditions where relatively high growth rate (～20 nm/min), smooth surface morphology and high saturation magnetization values in the range of 260–290 emu/ cm³ are obtained. The NFO films with correct stoichiometry (Ni:Fe=1:2) grow epitaxially on all four substrates, as confirmed by energy dispersive X-ray spectroscopy, transmission electron microscopy and x-ray diffraction. While the films on PMN–PT and PZN–PT substrates are partially strained, essentially complete strain relaxation occurs for films grown on MAO and STO. The formations of threading dislocations along with dark diffused contrast areas related to antiphase domains having a different cation ordering are observed on all four substrates. These crystal defects are correlated with lattice mismatch between the film and substrate and result in changes in magnetic properties of the films. Atomic resolution HAADF imaging and EDX line profiles show formation of a sharp interface between the film and the substrate with no inter-diffusion of Pb or other elements across the interface. Antiphase domains are observed to originate at the film–substrate interface.     

Effect of annealing on the structural,electrical and optical properties of nanostructured TiO2 thin films

Nanostructured titanium dioxide thin films were prepared using reactive pulsed laser ablation technique. Effects of annealing on the structural, morphological, electrical and optical properties are discussed. The structural, electrical and optical properties of TiO₂ films are found to be sensitive to annealing temperature and are described with GIXRD, SEM, AFM, UV‐Visible spectroscopy and electrical studies. X‐ray diffraction studies showed that the as‐deposited films were amorphous and at first changed to anatase and then to rutile phase with increase of annealing temperature. Optical constants of these films were derived from the transmission spectra and the refractive index dispersion of the films, subjected to annealing at different temperatures, is discussed in terms of the single oscillator‐Wemple and Didomenico model. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The epitaxial growth of thick smooth films of ZnS on GaAs

The growth of smooth thick (80 μm) films of highly-ordered ZnS on GaAs substrates [oriented near the (100)] by open tube vapour transport in H₂:HCl gas flow has been investigated. We have found the surface features of the layers to be similar to those associated with GaAs epitaxy, particularly the “sand-dune” type of hillock. To obtain smooth layers, the substrates must be off the (100) plane, and precleaned in HCl acid. The most critical factor during growth was the HCl transport gas concentration (1.2-1.4%). We have investigated the influence of growth parameters on surface quality and Si contamination. The Si concentration in the films was found to be approximately directly proportional to the growth rate of the layers.