ZnS晶体的化学气相沉积生长

本文报道了用化学气相沉积(CVD)法生长ZnS透明多晶体的实验结果,对生长的晶体的物理化学性能进行了测试,讨论了化学气相沉积工艺中影响ZnS晶体质量的因素.结果表明:选用固体硫作原料,用化学气相沉积方法,可以沉积出透明ZnS多晶体;它的透过性能极其优异,在6.2μm处无吸收峰,在中、长波红外透过率可达70;以上.     

温度梯度法生长氟化钙晶体

用温度梯度法成功生长了直径75mm、完整、透明的氟化钙晶体,对晶体进行了TG-DTA测试分析,确定了其熔点为1413.5℃,并测试了晶体从190nm的紫外波段到40000nm的红外波段的透过率,发现从中紫外波段到红外波段氟化钙晶体的透过率已经能满足各种应用的要求,但在远紫外波段和真空紫外波段(246nm以下)氟化钙晶体的透过率需要进一步提高.     

Growth of Potassium Sulphate Crystals by Silica Gel Technique

Single and transparent crystals of potassium sulphate up to 30 × 3 × 3 mm in size have been grown by silica gel technique, using various methods (two-layers three-layers and hybrid gel technique) which are described. The effects of the three differents alcohols (used as top solutions) upon the quality and nucleation of crystals are also reported. The “growth and equilibrium” morphologies and microstructures of the habit faces are discussed.     

双重加热法合成碳化硅晶须的研究

本文给出了一种低成本、适用于大批量生产碳化硅晶须的新方法,以炭黑和SiO2微粉为原料对用双重加热法合成碳化硅晶须进行了研究.研究表明,利用双重加热技术可以在较低合成温度1300℃下、较短合成时间1.5h内得到平均直径为0.3μm、长度为10～40μm、生成率达81;的碳化硅晶须.     

温梯法大尺寸红宝石晶体的研究

用温梯法生长出直径为76mm的红宝石晶体,用偏光显微镜观察了夹杂物的形状和分布规律,进一步用电子探针分析了夹杂物成分,并用吸收光谱分析了Cr3+的浓度分布规律.结果表明:夹杂物呈漏斗状的分布,晶体中部和末端纯度较高;Cr3+在晶体中的浓度呈有规律的分布,随着生长的进行,Cr3+的浓度沿径向和生长轴的方向都逐渐增加.     

提拉法制备铜单晶研究

采用提拉法生长出大尺寸(111)铜单晶,晶体尺寸为ф(12～19)mm×85 mm.通过XRD、金相显微分析讨论了铜单晶的晶体结构与生长缺陷,并采用双臂电桥测定(111)铜单晶的电阻率.结果表明:晶体具有(111)取向、强度高,表明晶体取向良好;蚀坑呈典型三角锥形,位错密度在105～106 cm-2之间;在室温下,(111)铜单晶电阻率为1.289×10-8Ω·m.     

温梯法白宝石晶体的缺陷研究

采用导向温梯法(TGT)生长出[0001]方向直径为76mm的白宝石晶体.利用扫描电子显微镜(SEM)观察晶体(0001)面的腐蚀坑形态,并对晶体内部的包裹物进行了能谱(EDS)分析.白宝石晶体中的生长缺陷主要为位错和包裹体等.Al2O3晶体(0001)面的位错腐蚀坑呈六角形,并且有台阶状结构.分析了(0001)面内的位错类型.确定了TGT法生长的白宝石内部的包裹物的主要成分为碳.     

Thin Crystals of Urea Grown by Hot Wall Condensation Technique

Crystallization of thin crystals of urea by hot wall condensation technique is described. Powder X-Ray diffraction (XRD) reveals the some decomposition of ura takes place during evaporation.     

The Microcamera Used for Photoelectron Excited by the X-ray Standing Wave (XSW) Recording and Submicron Layer Structure Studies

Information obtained owing to aquaintance with the course of the angular dependence of photoelectron intensity excited by the X-ray standing waves allows to determine, more explicitly, the state of crystal surface layer deformation. The aim of this work is to present a new measuring device constructed at the Institute of Physics of the Polish Academy of Sciences, especially the X-ray microcamera being simultaneously the proportional flowing counter used for measuring of photoelectron current emitted from the examined crystal. The angular dependence of the photoelectron current can be measured in coincidence with the angular running of rocking-curves. It is possible due to a computer program controlling the X-ray doble-crystal spectrometer, the microcamera and the electronic system for registration of the intensity of the diffracted beam as well the flowing counter. The scheme of the X-ray double-crystal spectrometer, the microcamera, and the electronic measuring system operation is given. There are also given the results of the introductory measurements carried out for the Si(111) implanted with the Au ions. The calculation of rocking-curve for non-disturbed crystal in the case of asymmetrically cut monochromator crystal was made. There was also estimated the range of depth from that the photoelectrons were emitted.     

Growth of Semiinsulating GaAs Crystals by Vertical Gradient Freeze Technique

GaAs crystals having dislocation densities of 1–2 10³ cm⁻² were grown using VGF technique. In the grown crystals Si_Ga is the dominant donor and C_As the dominant acceptor. Theoretical and experimental investigations have shown the possibilities to influence on the silicon and carbon content in GaAs. Based on these results, semiinsulating properties in the crystals could be achieved reproducibly.     

坩埚下降法生长白宝石晶体的研究

本文报道了坩埚下降法生长大尺寸白宝石单晶.我们使用大尺寸异型钼坩埚,高纯氧化铝原料,在中性气氛下,结晶区温度梯度为25～30℃/cm,生长速度为0.8～1.8mm/h,生长方向选C面[0001]取向,成功生长出直径80mm,高度90mm的完整透明的白宝石单晶,在300～5500nm范围内,其光学透过率均在80;以上.实验中采用高性能保温材料使生长过程所需加热功率由20kW下降到15kW,能耗降低达25;;采用双回路加热系统,提高温场稳定性,缩短晶体生长周期.晶体的主要缺陷为顶部(生长后期)出现有5～10mm淡黄色色带(经在氧化性气氛中退火后已消除)和底部有细丝状条纹.     

对同成分LiNbO3:Fe非挥发全息存储的研究

我们以双中心模型为基础,理论研究了同成份掺铁铌酸锂晶体在稳态情况下的非挥发双色二步全息存储性能.我们考虑了在深(Fe2+/Fe3+)、浅(NbLi4+/NbLi5+)能级之间所有可能的电子交换过程,通过比较深浅能级上的空间电荷场及总的空间电荷场的强度可以发现,深能级上的空间电荷场对总的空间电荷场的大小起到了非常重要的作用.此外,我们还研究了不同实验条件对LiNbO3:Fe非挥发全息存储的影响.     

非对称扩散工艺制备近化学计量比钽酸锂晶体的研究

利用气相平衡输运法制备的近化学计量比钽酸锂晶体质量好,制备工艺简单,但受固体扩散速率低的影响,该方法较难制备大厚度晶体。本文基于钽酸锂晶体的扩散机制,采用待扩散晶片一侧为富锂气氛,另一侧为同成分气氛的非对称扩散工艺,对钽酸锂晶体进行了扩散处理,并对组分和畴反转电场进行表征。结果表明,非对称扩散工艺为反位钽离子的扩散提供了通道,提高了晶体中反位钽离子和锂离子的扩散速率,有利于制备大厚度近化学计量比钽酸锂晶体。     

激光加热基座技术生长超细单晶光纤研究

单晶光纤(SCF)是具有纤维结构的“准一维”功能晶体材料,在高能激光、高温传感、辐射探测、信息通信等国防民生领域展现出了巨大的应用前景。本文采用激光加热基座技术成功制备出直径60~100 μm、长径比>6 000∶1的超细Al₂O₃、YAG单晶光纤,单晶光纤平均直径起伏<4%,展现出良好的柔韧性与波导特性,为单晶光纤器件的小型化与集成化创造了条件。     

The Behaviour of Zinc in GaP Synthesis by the SSD Technique

In this paper the principle of GaP synthesis by the SSD technique is described followed by a discussion of the results obtained in studying the transfer of an impurity such as the highly volatile zinc from the phosphorus source or gallium melt into GaP crystals. The radionuclide Zn⁶⁵ was used as a tracer to determine the concentrations of zinc in the phases involved in the process of synthesis. The results of these studies are compared with calculated values.     

Growth of Neodymium Pentaphosphate Single Crystals by the Flux Seeded Technique

Single crystals of neodymium pentaphosphate, NdP₅O₁₄, were grown by the flux seeded technique. The optimum growth conditions are scribed for obtaining a large crystal having well-developed faces with good quality.     

Growing Single Crystal Corundum Tubes by Verneuil Technique in Stable Conditions

The authors analyze the process of corundum tube growth by modified Verneuil's method from the viewpoint of its stability. The article shows that the process is stable in the case of thin-walled tubes and becomes unstable when the tube wall thickness exceeds a certain critical value which is known to be below the capillary constant. The critical thickness of the tube wall grows with a decrease of the heat flux density differential from the burner along the furnace muffle and with an increase of the tube's outer radius. As a result of a process of crystal growth under preset conditions constant cross-section single crystaal corundum tubes have been obtained.