PECVD法低温沉积多晶硅薄膜的研究

在玻璃衬底上采用常规的PKCVD法在低温(≤400℃)条件下制得大颗较(直径＞100nm)、择优取向(220)明显的多晶硅薄膜。选用的反应气体为SiF4和H2混合气体。加入少量的SiH4后，沉积速率提高了近10倍。分析认为，在低温时促使多晶硅结构形成的反应基元应是SiFmHn(m n≤3)，而不可能是SiHn(n≤3)基团。     

用金属诱导-准分子激光晶化法制备多晶硅薄膜

提出了一种新的晶化方法——金属诱导-准分子激光晶化法(MI-ELA)。该方法在制备多晶硅(p-Si)薄膜中包括两个步骤：第一步是用镍金属诱导方法(MIC)通过热退火形成NiSi2；第二步是再通过准分子激光退火方法(ELA)晶化形成p-Si。通过用XRD、Raman与SEM测试，研究了p-Si的结晶性和表面形貌特征。研究发现，MI-ELA方法制备的p-Si与传统的ELA方法和MIC方法相比在形貌上不一样，而且从XRD的特征峰强度可以看出在结晶度上有进一步提高。这个结果源于用MIC方法形成的且与e-Si晶格匹配的NiSi2在ELA中起到晶核的作用。这种晶化方法说明，在ELA中，晶粒生长不再仅仅依赖于熔融非晶硅和氧化物表面上残存的随机的固体a-Si作为成核媒介。这种方法不但可以提供晶粒稳定生长条件，而且也可能使获得更大晶粒粒度的激光晶化能量展宽。     

金属诱导法低温多晶硅薄膜的制备与研究

利用金属诱导晶化（Metal Induced Crystallization,MIC）的方法研究了a-Si/Ni的低温晶化,MIC晶化温度能降低到440℃.采用XRD、Raman、SEM、XPS等分析手段研究了Ni-MIC多晶硅薄膜的特性,对薄膜结构和组成进行了分析,对晶化过程的机理进行了讨论.     

金属诱导法低温多晶硅薄膜的制备与研究

利用金属诱导晶化 ( Metal Induced Crystallization,MIC)的方法研究了 a- Si/ Ni的低温晶化 ,MIC晶化温度能降低到 44 0℃ .采用 XRD、Raman、SEM、XPS等分析手段研究了 Ni- MIC多晶硅薄膜的特性 ,对薄膜结构和组成进行了分析 ,对晶化过程的机理进行了讨论     

激光晶化制备多晶硅薄膜技术

激光晶化是一种制作晶硅薄膜器件(如薄膜晶体管、太阳能电池)很有效的技术.展望了低温多晶硅薄膜的应用前景,详细介绍了近几年激光晶化制备多晶硅薄膜技术的研究成果,并就激光对非晶硅作用的原理作了简单讨论.     

金属诱导法低温多晶硅薄膜的制备与研究

利用金属诱导晶化（Ｍｅｔａｌ Ｉｎｄｕｃｅｄ Ｃｒｙｓｔａｌｌｉｚａｔｉｏｎ,ＭＩＣ）的方法研究了ａ－Ｓｉ／Ｎｉ的低温晶化,ＭＩＣ的晶化温度降低到４４０℃。采用ＸＲＤ、Ｒａｍａｎ、ＳＥＭ和ＸＰＳ等手段研究了Ｎｉ－ＭＩＣ多晶硅薄膜的特性,分析了薄膜结构和组成,讨论了晶化过程的机理。     

准分子激光晶化制备TFT多晶硅薄膜的研究进展

对准分子激光晶化制备TFT用多晶硅薄膜的研究进展进行了综述。介绍了晶化过程中的超级横向生长现象。主要结合各种基于光束调制和光刻技术的人工控制超级横向生长方法,讨论了获得大晶粒尺寸优质多晶硅薄膜的途径。     

镀铜玻璃衬底上柱状多晶硅薄膜的制备

采用热丝化学气相沉积方法在镀铜玻璃衬底上制备了柱状多晶硅薄膜.使用XRD、Raman光谱、扫描电子显微镜(SEM)和原子力显微镜(AFM)等测试手段研究了灯丝与衬底间距(5～10 mm)、灯丝温度(1 800～1 500℃)以及对应的衬底温度(在320～200℃变化)对多晶硅薄膜的微观形貌、结晶性及晶体学生长方向的影响规律.研究结果表明:在镀铜玻璃衬底上金属诱导生长的多晶硅薄膜具有较高的晶化率,较低的晶化温度,同时铜过渡层影响多晶硅薄膜的晶体学生长方向.     

铝诱导晶化法制备多晶硅薄膜

多晶硅薄膜在微电子和能源科学领域有着广泛的应用.本文介绍了利用铝诱导晶化非晶硅制备多晶硅薄膜的方法,叙述了铝诱导晶化法制备多晶硅薄膜的一般过程,着重讨论了铝诱导晶化非晶硅的机理和在制备过程中各种参数对多晶硅薄膜质量的影响.     

多晶硅薄膜的新型激光晶体制备方法

采用两步激光晶化方法制备了多晶硅薄膜,其晶粒尺寸为１．１μｍ,比用传统单步晶化制备的薄膜晶粒尺寸大,表明该方法法对扩大晶粒尺寸很有效。拉曼光谱分析表明０．３０Ｊ／ｃｍ＾２晶化的薄膜结晶程度已很高。     

低温共烧陶瓷(LTCC)技术新进展

介绍了低温共烧陶瓷(LTCC)技术的特点,并详细介绍了LTCC技术在零收缩基板及内埋置材料方面的最新技术,综述了LTCC技术在高密度封装以及微波无源元件领域中的应用。最后介绍了国内外LTCC器件的发展现状,并展望了LTCC技术的未来发展趋势。     

Effect of doping on the temperature coefficient of resistance of polysilicon films

For doped polysilicon films, an experimental investigation is presented into the variation of temperature coefficient of resistance (TCR) with formation conditions, the dopants being rare-earth elements (Eu, Gd, and Yb), oxygen, germanium, and implanted boron or phosphorus. The sign and magnitude of the TCR are shown to be governed by the dopant concentrations and the conditions of postimplantation annealing. Common and specific features are identified in the behavior of TCR for undoped films and for doped ones differing in dopant and doping technique. A negative TCR is observed in undoped films and in ones doped with a rare-earth element or germanium. B or P ion implantation into films predoped with Ge is shown to give a positive TCR if the implant concentration exceeds 10¹⁸ atoms/cm³. With any of the dopants employed, raising the dopant concentration makes possible the transition from a negative to a positive TCR.     

NTC热敏薄膜的研究进展

综述了负温度系数(NTC)热敏薄膜目前最常用的四种制备工艺,即:蒸发法(evaporation),磁控溅射法(magnetron sputtering),脉冲激光沉积法(PLD)和金属有机物热分解法(MOD),分析了这几种工艺的优缺点及国外的研究进展。并简要介绍了NTC热敏薄膜在传感器等方面的应用和发展前景。     

低温烧结ZnO压敏陶瓷研究进展

ZnO压敏陶瓷具有优异的非线性特性,广泛应用于电子仪器和电力装置领域.为了满足电子元器件低压化、小型化和集成化的要求,必须开发出烧结温度低且能与Cu、Zn、Al等贱金属实现共烧兼容的ZnO压敏陶瓷体系.总结了当前ZnO压敏陶瓷低温烧结的研究现状,讨论了ZnO压敏陶瓷低温烧结方法的优缺点,同时分析了ZnO压敏陶瓷低温烧结...     

锰锌铁氧体的制备工艺研究进展

简要介绍了锰锌铁氧体的传统制备方法和工艺流程,综述了近年来制备锰锌铁氧体的新工艺,最后根据目前的研究现状,探讨了锰锌铁氧体制备工艺优化的发展方向.     

Effects of impurities on removal of polysilicon in chemical-mechanical polish

The effects of impurities on the removal of doped polysilicon in the chemical-mechanical polishing (CMP) process is discussed. It has been found that the Si-CMP is seriously retarded in the presence of boron impurities. In this paper, effects of several usually used n-and p-type impurities for polysilicon are investigated. Successive polishing was performed to reveal the correlation between the removal rate and the dopant concentration along the depth of polysilicon layer. The removal is seriously retarded for p-type samples and slightly enhanced for n-type samples. After excluding the interference from surface roughness, linear relationship was found between the resultant removal rate and the doping concentration. In this study, electrostatic interaction between the reactant ions and the ionized impurities at the silicon surface is proposed to be the primary factor to change the removal reaction rates. For p-type polysilicon etched in an alkaline aqueous solution, transport of OH⁻ anions is hindered because OH⁻ anions experience a repelling force in front of the negative-charged acceptors. Following the same principle, the removal reaction forn-type polysilicon is enhanced. However, the removal rate forn-type polysilicon is rather limited by surface reaction than by transport of reactant ions. As a consequence, the enhancement of removing n-type polysilicon is not so prominent as compated to the retardation effect found for removal of p-type polysilicon.     

Characterization of polysilicon oxides thermally grown anddeposited on the polished polysilicon films

This work examines the characteristics of polyoxides thermally grown and deposited on polished polysilicon films. A well-controlled chemical mechanical polishing (CMP) process is also presented to achieve a planar surface morphology for polysilicon films. The thermally-grown and deposited polyoxides on the polished polysilicon films exhibit a lower leakage current, higher dielectric breakdown field, higher electron barrier height, lower electron trapping rate, lower density of trapped charges, and markedly higher charge to breakdown (Q_bd) than the conventional polyoxide. In particular, the deposited polyoxide on the polished polysilicon film has the highest dielectric breakdown field, lowest electron trapping rate, and highest charge to breakdown due to the planar polyoxide/polysilicon interface. In addition, experimental results indicate that the trapped charges of the polished samples are located in the polyoxides' upper portion, which differs from conventional polyoxides. Undoubtedly, the deposited polyoxide on the polished polysilicon film considered herein is the most promising candidate to yield optimum characteristics of polyoxide     

低固有烧结温度LTCC微波介质陶瓷研究进展

为了满足现代微波通信器件小型化和集成化发展的要求,必须开发出烧结温度低且能与Ag、Cu等价廉金属电极实现共烧兼容的微波介质陶瓷体系。重点介绍了Li基、Bi基、钨酸盐、磷酸盐和碲酸盐等低固有烧结温度的微波介质陶瓷体系,并总结了其在低温共烧陶瓷方面的研究进展。     

应用于射频范围的软磁薄膜研究进展

探讨了获得具有优良高频电磁性能的软磁薄膜的合适工艺条件。指出薄膜的性能主要取决于薄膜的成分、微观组织、磁致伸缩系数、残余应力状态、有无软磁底层、外加磁场溅射沉积和后续磁场热处理等因素。以Fe70Co30为基的软磁薄膜和Fe(Co)-X-N纳米晶软磁薄膜主要应用于要求高饱和磁化强度的器件如磁头中,磁性纳米颗粒膜具有高的电阻率因而趋肤深度较大,有望应用于高频微磁器件如微电感、微变压器的磁芯中。     

ZnO薄膜制备工艺的研究进展

从ZnO晶体结构入手,介绍了ZnO薄膜制备工艺的研究现状与进展,包括基片的选择,缓冲层的影响,薄膜极性的控制与制备技术。并指出基片的选择、薄膜的成核生长过程与界面问题仍是今后研究的重点。