Interdiffusion in two-layer Pd/Ag films II. “Cold” homogenization mechanisms

Interdiffusion processes in thin epitaxial polycrystalline Pd/Ag films in the temperature range 20–500°C are studied by transmission electron microscopy, electron diffraction and electrical resistance methods. Homogenization is investigated both during condensation and under conditions of postcondensation annealing.The basic processes of homogenization associated with GB diffusion along migrating boundaries. It is found that in real polycrystal films with wide spectrum of grain sizes few mechanisms can occur simultaneously or subsequently: recrystallization induced diffusion, diffusion induced grain boundary migration, activation of bulk diffusion in fine grain clusters, bulk diffusion through interphase boundary. The conditions for prevailing one of them can be provided by changing condensation and postcondensation annealing temperatures or by choosing certain grain size.     

The electric and magnetic properties of epitaxially grown A0.5-xLaxSr0.5MnO3 （A=Pr, Nd） thin film

The epitaxial （single crystal-like） Pr0.4La0.1Sr0.5MnO3 （PLSMO） and Nd0.35La0.15Sr0.5MnO3 （NLSMO） thin films are prepared and characterized, and the electric and magnetic properties are examined. We find that both PLSMO and NLSMO have their own optimum deposition temperature （To） in their growing into epitaxial thin films. When the deposition temperature is higher than To, a c-axis oriented but polycrystalline thin film grows; when the deposition temperature is lower than To, the thin film tends to be a-axis oriented and also polycrystalline. The most important point is that for the epitaxial PLSMO and NLSMO thin films the electronic phase transitions are closely consistent with the magnetic phase transitions, i.e. an antiferromagnetic phase corresponds to an insulating state, a ferromagnetic phase corresponds to a metallic state and a paramagnetic phase corresponds to a semiconducting state, while for the polycrystalline thin films the electronic phase transitions are always not consistent with the magnetic transitions.     

Structure and Surface Morphology of Cd<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se Epitaxial Films

Cd_1–xMn _x Se (х = 0.03) epitaxial films are produced by the molecular beam condensation method in a vacuum chamber with a residual pressure of 10^–4 Pa on mica and glass substrates. It is established that at room temperature and at a substrate temperature of T = 573 K films of polycrystalline structure grow on the mica substrates, but films of both polycrystalline and amorphous structure grow on the glass substrates. It is shown that the polycrystalline Cd_1–xMn _x Se (х = 0.03) films, unlike the bulk crystals, have a sphalerite-type structure with a lattice parameter of a = 6.05 Å. Increasing the substrate temperature to 673 K leads to epitaxial growth with the direction [111]. Dark aggregates, observed on the film surface, are removed using a source of compensating Se vapors during the growth process. The optimal conditions for the production of structurally perfect epitaxial films are defined.     

Structure and electrical properties of thin films of copper selenide

Electron-diffraction and electron-microscope methods were used to investigate the structure of Cu₂Se films of close to stoichiometric composition. It is shown that in polycrystalline and single-crystal films of thickness >400Å at room temperature, the tetragonal modification is stable, which at temperatures above 400°K is transformed into the cubical modification. In thinner films d<400 Å the cubical modification of copper selenide is stable at room temperature. A sharp peak is observed at 400°K on the temperature dependence of the resistance; this is connected with the phase transition. At room temperature, copper selenide is a degenerate p-type semiconductor with carrier concentration 5 · 10²²–8 · 10²⁰ cm^–3, depending on the thickness of the film.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 90–94, August, 1973.     

Segregations at antiphase boundaries in hexagonal close-packed superstructures. II

As was shown in the first part of this study [1], slip occurs in polycrystalline ordered Mg₃Cd, which has a DO₁₉ superstructure, along the {0001} basis planes, {1010} prismatic planes, and {1011} and {1012} pyramidal planes [2,3]. The formation of segregations at antiphase boundaries (APB's) in the {0001} basis and {1011} pyramidal planes was also examined there [1]. Segregations at APB's in planes are treated in this second part of the study. A zero-energy APB may form in the prismatic plane [4]. Segregation of atoms, on the other hand, is not allowed at such an APB according to the Gorskii-Bragg-Williams theory if correlation and interaction in the second and higher coordination spheres are not taken into account.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, Vol. 12, No. 5, pp. 62–70, May, 1969.The authors thank N. S. Golosov and N. V. Kozhemyakin for discussion of this study and valuable advice.     

Production of ultrafine particles of high-temperature tetragonal WO<Subscript>3</Subscript> by dc arc discharge in Ar–O<Subscript>2</Subscript> gases

Ultrafine particles of WO₃ are successfully produced by dc arc discharge in Ar-O₂ gases. Particle sizes are distributed from 10 nm to 1 m depending on production conditions: gas pressure, collection position and discharge current. Observations of the cooled particles by electron microscopy indicate that the WO₃ particles are tetragonal, a phase that is usually only stable above 725 °C. The octahedral crystals are bounded by eight {1 0 1} faces and occasionally truncated by {1 0 0} and/or {0 0 1} faces. This method of producing WO₃ by dc arc discharge therefore affords a high-temperature phase that is preserved upon cooling to room temperature.     

Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n-type GaAs

We have calculated the thermal equilibrium concentrations of the various negatively charged Ga vacancy species in GaAs. The triply-negatively-charged Ga vacancy, V _Ga ^3– , has been emphasized, since it dominates Ga self-diffusion and Ga-Al interdiffusion under intrinsic and n-doping conditions, as well as the diffusion of Si donor atoms occupying Ga sites. Under strong n-doping conditions, the thermal equilibrium V _Ga ^3– concentration, , has been found to exhibit a temperature independence or a negative temperature dependence, i.e., the value is either unchanged or increases as the temperature is lowered. This is quite contrary to the normal point defect behavior for which the point defect thermal equilibrium concentration decreases as the temperature is lowered. This property provides explanations to a number of outstanding experimental results, either requiring the interpretation that V _Ga ^3– has attained its thermal equilibrium concentration at the onset of each experiment, or requiring mechanisms involving point defect non-equilibrium phenomena.     

Polycrystalline silicon films obtained by hot-wire chemical vapour deposition

Silicon films were deposited at moderate substrate temperatures (280–500° C) from pure silane and a silane-hydrogen mixture (10% SiH₄, 90% H₂) in a hotwire CVD reactor. The morphology, structure and composition of the samples were studied with scanning electron microscopy, transmission electron microscopy, transmission electron diffraction, X-ray diffraction, Raman spectroscopy and secondary ion mass spectrometry. The sample deposited at 500° C with pure silane has an amorphous structure, whereas the samples obtained from silane diluted in hydrogen have a polycrystalline structure, even that grown at the lowest temperature (280° C). Polycrystalline samples have a columnar structure with 0.3–1 m crystallite sizes with preferential orientation in [220] direction. Deposition rates depend on the filament-substrate distance and range from 9.5 to 37 Å/s for the polycrystalline samples. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. Moreover, it is expected to be easily scaled up for applications to large-area optoelectronic devices and to photovoltaic solar cells.     

Effects of growth temperature and substrate orientation on the entry of tellurium into epitaxial gallium arsenide films

Measurements have been made on the electrophysical properties and rate of tellurium uptake in epitaxial films of gallium arsenide grown at various temperatures (600–800°C) on GaAs substrates of principal and vicinal orientations. The activation energy for tellurium uptake has been determined and the rate-limiting stages for various faces have been examined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 12–17, November, 1982.     

Motion picture x-ray diffraction investigation of the martensitic transformation in nickel-titanium alloy

The thermoelastic martensitic transformation of an equiatomic nickel-titanium alloy is investigated by means of x-ray diffraction motion pictures using synchrotron radiation. The x-ray patterns are recorded by a parallel detector simultaneously in the range of angles 2=34°–51° at a wavelength of 1.4879 Å during heating and cooling with good temperature resolution. The basic parameters of the attendant B2, R, and B19 phases are determined simultaneously and compared. The variations of the parameters of the martensite B19 unit cell are traced, along with the evolution of the R phase {202}{202} reflection doublet during transformation. Volumetric transformation phenomena are determined, and it is shown that martensite originates in a more unconsolidated structure than in the equilibrium state.Institute of Physics of Strength and Materials Science, Siberian Branch, Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 49–54, August, 1994.     

Characteristic x-ray temperature of Fe-Ni alloys with a distinct crystal lattice

The temperature dependence of the coefficient of thermal expansion (_t), therms dynamic displacements , and the characteristic x-ray Debye temperature (_x) of nickel-iron films (24–34% Ni, the rest Fe) with bcc and fcc lattices is studied.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, No. 5, pp. 52–56, May, 1978.     

Structural, morphological and optical properties of \hbox {In}_{2}\hbox {S}_{3} thin films obtained by SILAR method

$\hbox {In}_{2}\hbox {S}_{3}$ thin films have been elaborated onto glass substrate by SILAR method at room temperature using different immersion time in the solution of cation and anion and fixing the rinsing time. The film composition, morphology and structure were investigated using energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and X-ray diffraction techniques. Optical properties, such transmission and band gap have been also analyzed. The effects of annealing on the morphological structure thin films are also described. The x-rays diffraction spectra indicated that the formed compounds are $\upbeta $ - $\hbox {In}_{2}\hbox {S}_{3}$ polycrystalline thin films with $\hbox {In}_{6}\hbox {S}_{7 }$ as second phase in sample S1 and sample S2 and no another phase in sample 3. SEM revealed homogeneous and relatively uniform films and EDAX shows sample 3 with S/In=1.44. For sample 1 and sample 2, we noted an increase of band gap when rinsing time increases.     

Carrier lifetime in single-crystal PbS films

The temperature dependence of the majority carrier lifetime was studied in single-crystal PbS films. In n- and p-type films in the range 300-200 ° K, increases exponentially with decreasing temperature, with an activation energy of e O. 17-0. 2 eV. This m dependence is assumed due to the trapping of minority carriers at deep levels. Below 160 ° K in the n-type films, does not depend on the temperature, while in the p-type films, decreases exponentially with an activation energy of 0. 11–0. 14 eV.Translated from Vysshikh Uchebnykh Zavedenii Fizika, No. 6, pp. 64–67, June, 1970.     

Dislocation nucleation centers of thinly lamellar α-martensite in iron alloys

Probable dislocation-type nucleation centers of -martensite crystals with {259}-{3 10 15} habits, which are observed in iron alloys, are selected. It is demonstrated that 30° dislocations of the initial phase are most consistent with the wave pattern of the growth of such crystals. A particular dislocation nucleation center corresponds to each martensite crystal with a given morphology.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 79–83, September, 1991.     

Epitaxial ZnO films grown on ZnO-buffered c-plane sapphire substrates by hydrothermal method

ZnO films are hydrothermally grown on ZnO-buffered c-plane sapphire substrates at a low temperature of 70 °C. A radio-frequency (RF) reactive magnetron sputtering has been used to grow the ZnO buffer layers. X-ray diffraction, scanning electron microscopy, and room temperature photoluminescence are carried out to characterize the structure, morphology and optical property of the films. It is found that the films are stress-free. The epitaxial relationship between the ZnO film and the c-plane sapphire substrate is found to be ZnO (0 0 0 1)||Al₂O₃ (0 0 0 1) in the surface normal and in plane. Sapphire treatment, as such acid etching, nitridation, and oxidation are found to influence the nucleation of the film growth, and the buffer layers determine the crystalline quality of the ZnO films. The maximum PL quantum efficiency of ZnO films grown with hydrothermal method is found to be about 80% of single-crystal ZnO.     

One-step preparation of N-doped strontium titanate films by pulsed laser deposition

Perovskite-type oxynitrides exhibit promising electrical and optical properties and can possibly be used in the future as functional materials for electrical, photo-, and electrochemical applications. Continuous heterovalent substitution of oxygen ions by nitrogen ions allows tuning of the desired optical and/or electronic properties to the application specifications. In the present work deposition of SrTiO₃:N films by pulsed reactive crossed beam laser ablation was studied in order to examine the influence of different deposition parameters on the film crystallinity and composition. The deposited films exhibit a perovskite-type crystal structure and reveals epitaxial growth on MgO(100) substrates. The unit cell parameters of the deposited SrTiO₃:N films range within , which is slightly larger than for polycrystalline SrTiO₃ (a=3.905). The studied films reveal an oxygen content in the range of (2.70-2.98)±0.15. The relative N content (vs. O) can be tuned within the range of 1.0–3.0% by adjusting the deposition parameters. The N:O concentration ratio increases with increasing laser fluence and target-to-substrate distances, while the substrate temperature has a more complex influence on the nitrogen concentration. In the range of 580–650 °C the [N]/[O] ratio increases while further heating results in a gradual decrease of the N content. PACS  81.15.Fg; 68.55.-a; 81.05.Zx     

Instability of the molecular structure of monobenzoporphin to the alternation of the macrocycle bond lengths and its manifestation in the electronic spectra

Quantum-chemical calculations of the geometric structure of the molecules of monobenzoporphin (H₂ MBP) and monobenzoporphin with methyl and ethyl substituents in the five-member rings (H₂MBPm) have been carried out by the restricted and unrestricted Hartree-Fock methods with the AM1 Hamiltonian (AM1 RHF and AM1 UHF methods). The calculation of the above-indicated molecules by the AM1 RHF method without restrictions on their symmetry has given, for them, a planar structure with an alternation of the lengths of the bonds along the 18-member azacyclopolyene and the symmetry C _1h for their aromatic part. The calculation of the transitions to the excited electron Q states in such a structure by the CNDO/S method has shown that these states are characterized by large hypsochromic shifts (~3000–4000 cm^–1 ) relative to the Q levels of porphin (H₂P), which is in contradiction with the experimental data, according to which these shifts are bathochromic and comprise = –330 cm ^–1 and = –750 cm^–1. Optimization of the geometry of the H₂ MBP and H₂MBPm molecules by the AM1 UHF method gives, for them, a structure with equal lengths of the bonds along the 18-member azacyclopolyene with a symmetry differing insignificantly from the D _2h symmetry; elements of the structure with a lower symmetry and an alternation of the lengths of the bonds are retained in the condensed pyrrolenine and benzene rings. The calculation of the shifts of the Q levels in the H₂MBPm molecule of this geometry relative to the analogous levels in H₂P has shown that they are bathochromic and equal to = –520 cm^–1, and the RHF calculation with optimization of the geometry of the molecule and restrictions on the effective symmetry D _2h of the 18-member azacyclopolyene has given = –350 cm^–1 and = –430 cm^–1. The restrictions imposed on the C ₂ symmetry of the H₂MBP molecules by the RHF method are inadequate to equalize the lengths of the bonds along the 18-member azacyclopolyene. The calculations of the energy of the B levels of the monobenzoporphyrins considered also lend credence to their geometric structure with equal lengths of the bonds along the 18-member azacyclopolyene.Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 71, No. 6, pp. 712–721, November–December, 2004.This revised version was published online in April 2005 with a corrected cover date.     

Kinetic features of the oxide formation on {111} polar planes upon anode treatment of <Emphasis Type="Italic">n</Emphasis>-GaAs

The mechanism and kinetics of anode destruction of {111} polar planes of n-GaAs and morphological features of forming oxide films in the potentiostatic mode of polarization in weakly acid solutions of electrolytes have been studied. It has been found that anode polarization of the gallium plane (111) Ga provides the formation of a porous structure of both the single-crystal matrix and oxide film, which has a planar topology. In this case, the pore density is always commensurable with the surface dope concentration. In contrast to the gallium plane, the anode polarization of the arsenic plane \(\overline {\left( {111} \right)} \) As provides the tangential mechanism of destruction of the semiconductor matrix and the island-type morphology of the oxide. Equal crystallographic orientation of islands is determined by the directive action of the family of oxidized planes \(\left\{ {1\overline {11} } \right\}\) GaAs. However, regardless of the crystallographic orientation of the polar plane, the forming oxide is represented by polycrystalline As₂O₃ and amorphous Ga₂O₃.     

Dielectric constant and current transport for HfO2 thin films on ITO

The dielectric constant and leakage current mechanisms for HfO₂ thin films deposited on indium–tin–oxide using reactive rf sputtering deposition were examined. Indium–tin–oxide was selected as the bottom metal as it is of interest as an electrode in transparent field-effect transistor development. The dielectric constant of HfO₂ films was approximately 20 and did not vary significantly with deposition conditions. Temperature-dependent leakage current measurements indicate that Schottky emission is the dominant transport mechanism in films deposited at low temperature and/or low oxygen pressure. The HfO₂/indium–tin–oxide barrier height was extracted to be 1.1±0.2 eV. Films deposited at high temperature and/or oxygen pressure deviate from the Schottky emission model, presumably due to the formation of polycrystalline material with grain boundary conduction. PACS  73.61.Ng; 73.50.Lw; 77.55.+f     

Conductivity compensation and deep traps in epitaxial n-GaAs irradiated by electrons

A study has been made of electrophysical properties and deep traps in epitaxial n-GaAs grown by the chloride method and irradiated by electrons in the temperature range (20–500)°C. It is shown that the natural conductivity of GaAs is attained at irradiation temperatures of 20°C due to the introduction of E traps, and for 300°CT_irr500°C of high-temperature P traps, presumably defect clusters.V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 57–60, October, 1992.