Recombination of nonequilibrium charge carriers in epitaxial Hg1−x Cdx Te MBE films

We present the results of charge-carrier lifetime measurements in narrow-band Hg_1−xCd_xTe epitaxial structures (x=0.210–0.225) grown by molecular-beam epitaxy (MBE) using pulsed excitation by radiation at various wavelengths. In p-type epitaxial films the carrier lifetime is governed by Shockley-Read recombination at impurity-conduction temperatures. The governing factor for n-type epitaxial films is Auger recombination, with some contribution from other recombination mechanisms (surface and macrodefects). V. D. Kuznetskov Siberian Physicochenical Institute, Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 96–101, September, 1997.     

The determination of the x value in doped Hg1-xCdxTe by transmission spectra

Variable-temperature transmission/absorption spectra are measured on As-doped Hg 1 x Cd x Te grown by molecular beam epitaxy.The nonlinear temperature-dependent shift of the absorption edge is also observed,which is similar to our previous report on V Hg (unintentionally)-doped HgCdTe.By referring to the empirical formulas of E g (x,T),the x value of the epilayer is calculated and its inconsistency between the extreme temperatures (e.g.10 and 300 K) is discussed.The results confirm the assumption of the effect of shallow levels on the shift of the absorption edge,and suggest that the x value (or E g) in intrinsic/extrinsic-doped HgCdTe should be determined by referring to as low a temperature as possible (e.g.10 K),and not the commonly used temperatures of 77 or 300 K,when the transmission spectrum should be employed.This can give brief guidelines for fabricating HgCdTe-related devices.     

Lifetime of charge carriers in multiwalled nanotubes

The nature of low-energy excitations in multiwalled nanotubes (MWNTs) is investigated by means of two-color time-resolved photoemission. A careful analysis of the ballistic transport, secondary excitations, and band structure effects was employed in order to extract single electron lifetimes from the observed relaxation trend. It is demonstrated that in the vicinity of the Fermi level the energy dependence of e-e scattering times is inversely proportional to approximately the square of the excitation energy. This result provides strong evidence that electron transport in MWNTs exhibits a Fermi-liquid behavior, indicating that long-range e-e interaction along the tube vanishes due to screening.     

Formation of p-n junctions in tellurium-doped AlxGa1−xSb(As) (x = 0.15–0.20) solid solution layers

We study the variation of electron density n in depth of tellurium-doped epitaxial Al_xGa_1–xSb(As) (x = 0.15–0.20) layers. It is established that n decreases in proportion to the growth of the layer and, under definite conditions, the formation of p-n junctions in layers grown from a single melt or the growth of layers having an electron density below 10¹⁶ cm^–3 is possible. It is shown that the cause of such a decrease of electron density is the variation of the composition of the solid solution in depth of the layer and the accompanying increase in the concentration of residual acceptor defects in the material.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 82–86, November, 1984.In conclusion the authors wish to express their gratitude to senior scientist M. D. Vilisovaya, junior scientist G. K. Arbuzovaya, Z. V. Korotchenko, and V. A. Pozolotin for assistance in carrying out the experiments.     

Hg_(1-x)Cd_xTe材料变温特性的实验研究

对碲镉汞(Hg1-xCdxTe)材料的电学特性进行了变温实验研究.通过变温(80~300 K)霍尔效应测量,研究了Hg1-xCdxTe材料的霍尔系数RH、电导率σ和霍尔迁移率μH的温度依赖关系.结果表明,Hg1-xCdxTe晶体在低温下为p型导电,而在室温下为n型导电.     

LPE碲镉汞薄膜的显微Raman谱与显微荧光谱分析

利用Raman显微镜系统对4块用液相外延(LPE)方法在Cd0.96Zn0.04Te衬底上生长的Hg0.8Cd0.2Te外延薄膜样品，在100～5 000cm^-1光谱范围进行测量，在实验曲线中除了观察到与碲镉汞材料晶格振动相符的类．HgTe的光学振动横模(TO1模)和纵模(LO1模)的Raman散射峰、类-CdTe光学振动横模(TO2模)和纵模(LO2模)混合的Raman散射峰以及来源于TO1 LO1的二级Raman散射峰外，在1 000～5 000cm^-1光谱范围首次发现了LPE碲镉汞薄膜的显微荧光峰，该显微荧光的发光范围换算为电子伏特标度为1．34～1．83eV．发光中心位于2750cm^-1即1.62eV，发光峰的半高宽(FWFIM)约为0．25eV。通过分析指出．该显微荧光来源于碲镉汞外延层中阴性离子空位与材料导带底的共振能级的发光。     

Magnetic ordering in FexMg1−xCl2, (x=0.55, x=0.45, x=0.30)

Mössbauer measurements on the diluted crystals Fe_xMg_1–xCl₂ show that fluctuating magnetic clusters are present. These can be related to the known spin-glass properties of these compounds. The fluctuating frequencies depend on temperature and the fluctuations can be suppressed by a sufficiently high external magnetic field     

Magnetic and57Fe Mössbauer studies of intermetallic compounds R2 (Fe1−x−y Ni x Co y )17 (R=Y,Gd,Tb,x=0,0.10, 0.20,y=0,0.05, 0.10)

Mössbauer studies of R₂(Fe_1?x?y Ni _x Co _y )₁₇ showed that the transferred hyperfine field at Fe nuclei due to magnetic rare earth (R) atoms is about one Tesla. Magnetic moments of the R atoms were determined from magnetic measurements as μTb=8.52μB, μGd=6.22μB. The mixed substitution of Ni and Co for Fe leads to an increase of the ordering temperature. A slight preference occupancy for Fe was observed involving the dumbbell shaped f or c site. The substitution effects of Ni and Co on the hyperfine field of f or c site, the average hyperfine field and the average isomer shift were also discussed.     

Hg1-xCdxTe/Cd1-zZnzTe的X射线反射率及半峰全宽的动力学研究

X射线衍射摇摆曲线的计算机模拟是一种获得材料晶体质量参量的有效方法，其中材料本征摇摆曲线的计算是计算机模拟的基础。用X射线动力学理论计算了Hg1-xCdxTe和Cd1-zZnzTe本征反射率曲线，并研究了组分、膜厚分别对本征反射率和半峰全宽的影响。结果表明Hg1-xCdxTe和Cd1-zZnzTe的本征反射率和半峰全宽与材料组分和厚度有明显的依赖关系，且该依赖关系取决于X射线在材料中的散射和吸收的相对强弱。薄膜的厚度也是直接影响本征摇摆曲线峰形、半峰全宽和反射率的重要因素，当薄膜厚度小于穿透深度时，表征本征反射率曲线的各个参量均与薄膜厚度有直接的关系。对于(333)衍射面，碲镉汞材料厚度大于7μm后，本征反射率和半峰全宽将不再发生明显变化。     

MOCVD外延Hg1-xCdxTe/Cd1-yZnyTe薄膜的光致发光

利用Raman显微镜系统对两块用MOCVD方法在Cd_0.96Zn_0.04Te衬底上生长的Hg_0.8Cd_0.2Te外延薄膜样品在光谱范围50～5000cm^-1进行了测量,在其中的一块样品上首次发现了143eV至193eV范围内出现的具有周期结构的光致发光峰,该发光峰对应的能带中心位于Hg_0.8Cd_0.2Te外延层导带底上方173eV,在另外一块外延薄膜样品中仅观察到四个Raman散射峰,没有周期结构的发光峰。为了分析上述光致发光的起因,对两块样品进行了X射线的双晶回摆曲线样品结构分析,得出样品在143eV至193eV范围的光致发光峰是由于改进MOCVD生长工艺提高了样品的结构质量所致,通过分析指出该光致发光峰是来源于Hg_0.8Cd_0.2Te外延层中的阴性离子空位的共振能级。     

Up-conversion and population of excited erbium levels in LiY1−x ErxF4 (x=0.003–1) crystals under CW InGaAs laser-diode pumping

Formation of the inverse population of working levels of 3-μm laser transition in LiY_1−x Er_xF₄ (x=0.003–1) crystals under CW InGaAs laser-diode pumping (0.967–0.982 μm) was investigated. Dependences of population of the ⁴ I _11/2 and ⁴ I _13/2 levels on the dopant concentration and pump power were studied theoretically and experimentally. Relative changes in populations of the studied levels were experimentally monitored by measuring the steady-state spectra of IR crystal luminescence in the wavelength range corresponding to ⁴ I _11/2→⁴ I _13/2 (2.7–2.8 μm), ⁴ I _11/2→⁴ I _15/2 (0.96–1.04 μm), and ⁴ I _13/2→⁴ I _15/2 (1.45–1.65 μm) transitions. Theoretical and experimental estimates of the rates of intracenter and intercenter relaxation processes (migration, self-quenching, and up-conversion) with allowance for statistics of coupling of impurity centers in the system were used to determine the energy-transfer mechanisms, elucidate the predominant mechanisms, and obtain microparameters and concentration dependences of the energy-transfer rates and nonlinear coupling. Dependences of the steady-state population of the levels of laser transition ⁴ I _11/2→⁴ I _13/2 on the dopant concentration and pumping power density were calculated within the context of rate balance equations for the scheme with the five lowest excited states of erbium. Good agreement between theory and experiment was obtained. __________ Translated from Optika i Spektroskopiya, Vol. 92, No. 1, 2002, pp. 73–88. Original Russian Text Copyright ? 2002 by Tkachuk, Razumova, Mirzaeva, Malyshev, Gapontsev.     

Ellipsometric study of the optical properties of Ca1 − x La x MnO3 single crystals (x = 0–0.2) under n-type doping

The dispersion of the real, ε₁(ω), and imaginary, ε₂(ω), parts of the complex permittivity of Ca_{1 ? x} La_xMnO₃ single crystals (x = 0, 0.05, 0.10, 0.12, 0.20) was studied at room temperature in the spectral region extending from 60 meV to 5 eV. It was found that substitution of lanthanum for calcium shifts the 3.1-eV absorption band in the optical-conductivity spectrum toward higher energies, with the spectral weight of the low-energy wing of the 2.2-eV band becoming redistributed to the band-gap region (E < 1.5 eV) of the starting CaMnO₃ compound. The specific features of optical-conductivity dispersion in the mid-IR region that occur under n-type doping were established. The frequency dependence of optical conductivity was shown to differ from the Drude behavior characteristic of metals. The optical-conductivity spectra of Ca_{1 ? x} La_xMnO₃ were compared with our earlier results on a series of hole-doped La_{1 ? x} Sr_xMnO₃ single crystal.     

Spontaneous photorefractive effect in Sr1−x CaxTiO3 (x=0.014)

The temperature dependence of the principal values of the refractive index in Sr_1−x Ca_xTiO₃ (x=0.014) has been measured in the 17–275 K range under various conditions of sample illumination with 1.96 eV photons. The spontaneous photorefractive contribution δn ^ph to the temperature-induced variation of the refractive index of Sr_1−x Ca_xTiO₃, which appears after illumination of the sample in the ferrophase (transition temperature T _c=32 K) and persists in the paraphase under heating up to 150 K, has been separated. The photoinduced polarization has been estimated. Fiz. Tverd. Tela (St. Petersburg) 39, 711–713 (April 1997)