Polarizabilities of shallow donors in silicon

Capacitance measurements on N-type As, P, and Sb-doped Si samples have been made between 4.2 and 1.35°K, from 0.3 to 100 kHz as a function of (N_D ? N_A) [high purity to 2.7 × 10¹⁸/cm³]. From the dielectric constant variation with (N_D ? N_A) donor polarizabilities α_AS, α_P, and α_Sb are found respectively to be $\text{1.0±0.1, 2.4±0.4,}\text{and}\text{3.1±0.3 × 10}{}^5\text{A}\text{?}{}^3$.     

Polarizabilities of shallow donors in silicon — A comment

A recent experiment on n-type As, P and Sb-doped Si samples to study the donor polarizabilities by the capacitance measurement should be reinterpreted on the basis of the d.c. resistivity data below 4.2 K together with the concentration vs resistivity relations at room temperature.     

Polarizability of shallow donors in silicon - A reply

A reply to the comment of Yoshihiro and Yamanouchi is made explaining the role of Schottky barriers on the capacitance results determined previously by Bethin, Castner, and Lee. Earlier concentration-dependent dielectric constant measurements for Sb-doped Ge are also noted.     

Central cell effects on the polarizabilities of shallow donors in silicon

With the Topp and Hopfield form for the ionic pseudopotentials, the screened impurity pseudopotentials of the shallow donors P, As and Sb in silicon are obtained in closed form in the linearized Thomas-Fermi model. The results are compared with the screening using a k-dependent dielectric function. Using these impurity pseudopotentials in the multivalley effective mass equation, the binding energies of these donors in Si are estimated variationally. Adopting the Hasse variational method, the polarizabilities of the P, As and Sb donors in Si are computed and are found to be in excellent agreement with the polarizability values of isolated P and Sb in Si, deduced from recent piezocapacitance measurements.     

Systematics of bound excitons and bound multiexciton complexes for shallow donors in silicon

We report luminescence measurements of transitions involving bound multiple exciton complexes in Si:Sb and Si:As. The systematics of the donor systems Si:P, Si:As and Si:Sb are examined. We find that the splittings between the two observed series of lines are independent of complex number and donor type.     

Generation of shallow nitrogen-oxygen donors as a method for studying nitrogen diffusion in silicon

Physics of the Solid State - The nitrogen concentration distribution C(z) obtained after diffusion of nitrogen from the bulk of a sample toward the surface is determined with a high accuracy...     

Copper donors in silicon

The temperature dependences of the resistivity and of the Hall constant were measured for dislocation-free p-type silicon saturated with copper under different conditions at temperatures round 1000°C. The analysis of the results and their discussion led to the conclusion that the copper donors form complexes the dimension and physical characteristics of which depend on the way the sample is prepared.     

Polarizability of shallow donors in EuSe

Permittivity measurements at a microwave frequency 24 GHz have been made on n-type EuSe at low temperatures 4.2–77 K after various annealing times. Consideration of different models for annealing dependent permittivity leads to the polarizability of Se vacancy defects as the most likely explanation. Donor polarizability $\text{α}{}_{\mathrm{d}}\text{= 3.2 × 10}{}^6\text{A}\text{?}{}^3$is found and further an estimation for electron effective mass $\text{m}{}^1\text{= 0.28m}{}_0$.     

Far-infrared photoconductivity from the shallow donors in n-InP

The wavenumber of the 1s → 2p transition of the shallow donor in n-type InP is found to be 46.3 ± 0.4 cm⁻¹ in zero magnetic field, giving a conduction band effective mass of 0.085 ± 0.005 m₀ and a donor binding energy of 0.00765 eV. The Zeeman splitting of this transition is observed and yields an effective mass of 0.0810 ± 0.0005 m₀. Sharp structure is found in the spectral response of the photoconductivity close to the frequency of the LO phonons. This structure may be related to ‘total negative photoconductivity’.     

Thermal double donors in silicon

A family of double donors with only slightly differing binding energies can be generated in silicon containing oxygen. In the 30 years since they were discovered the microscopic structure of these defects has not been unravelled in spite of being investigated with all the tools of solid state physics.     

New oxygen donors in silicon

Oxygen donor traps and oxygen-related precipitates are investigated by deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). The so-called New Donors (ND's) occur after thermal treatments in the temperature range of 650 °–800 ° C. They have a continuous distribution of trap states with respect to energy in the band gap of Si. The concentration of the trap states increases towards the conduction band edge. The precipitates observed are mainly platelets and ribbon-like defects. The formation and annihilation kinetics of ND traps and oxygen-related precipitates are correlated. An SiO _x Interface Model is proposed to explain the origin and the donor-like behavior of the ND traps. The ND trap spectrum is composed of two different types of trap states: interface states at the surface of precipitates and bound states in the Coulombic wells of a fixed positive charge which is located in the SiO _x precipitates.     

Impact of dangling bonds on the surface of silicon nanocrystals doped with shallow donors upon radiative interband transitions

It is found that the radiative recombination rate rises when silicon nanocrystals are doped with donors. This rise turns out to be stronger when a nanocrystal surface contains abundant defects capable of capturing electrons emitted by donors.     

Polarizabilities of shallow donors in finite-barrier nanodots

Polarizabilities of shallow donors in finite-barrier GaAs/Ga_1−xAl_xAs of harmonic oscillator nanodots are calculated, within the effective-mass approximation, using the Hasse variational method. The magnetic field dependence of polarizabilities and the diamagnetic susceptibilities are computed.     

An observation by photoconductivity of strain splitting of shallow bulk donors located near to the surface in silicon mos devices

Photoconductivity is observed in n-channel inversion Si MOSFETS at 4.2 K at infrared frequencies up to 700 cm^?1. Two groups of sharp lines of opposite sign are observed in the regions of 300 and 650 cm^?1 together with a continuum of transitions starting at ～ 350 cm^?1. The sharp lines are interpreted as bound transitions from shallow neutral phosphorous donors and boron acceptors on either side of the depletion layer. The angular dependence of the Zeeman splitting of the sharp lines demonstrates that the normal 90° symmetry of the 100 surface is lifted for devices with thin metal gates due to the presence of a strong unixial stress component.     

Phosphorus donors in highly strained silicon

The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si(1-x)Ge(x) substrates with x< or =0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density functional theory shows that the additional reduction is caused by the volume increase of the unit cell and a relaxation of the Si ligands of the donor.