Optical detection of surface states in GaAs(110) and GaP(110)

We present results on the optical detection of surface states in GaAs(110)and GaP(110)by the method of the fractional change of external reflectivity. Optical transitions are observed at ～3.1 eV m GaAs(110) and ～3.4 eV in GaP. A comparison with existing theories suggests a rotational relaxation model for the surface, with partial relaxation for GaAs(110) and full relaxation for GaP(110).     

Polarization dependence of optical transitions in GaP(1 1 0) and GaAs(1 1 0) surfaces studied with surface differential reflectivity

We present results on the polarization dependence of Surface Differential Reflectivity in GaP(1 1 0) and GaAs(GaAs(1 1 0) surfaces. GaP(1 1 0) shows a transition at 2.8 eV which is excited only with the light electric vector parallel to the [1 1 0] direction; for the optical transition above 3.0 eV there is not any marked polarization dependence. GaAs(1 1 0) shows optical transitions between 2.6 and 4.0 eV which have a weak dependence on light polarization.     

In/GaAs(111)界面形成过程的电子能谱研究

用光电子能谱结合LEED图样分析的方法研究了In在非解理的GaAs(111)面上的界面形成过程。观察到在这一过程中三维In集团的生长起支配作用。发现对于所有研究过的n型样品,包括Ga终止的GaAs(111)-A面和As终止的GaAs(111)-B面,淀积In之前的表面费密能级均在VBM上面0.75±0.05eV处,在淀积过程中迅速移至VBM上面0.90±0.05eV处。 关键词：     

Electronic surface properties of uhv-cleaved III–V compounds

Combined CPD and photoemission measurements were performed on uhv-cleaved surfaces of the III–V compounds InAs, GaSb, GaAs and GaP with moderate p-type and n-type dopings. Except for n-type GaP these materials show practically no band bending. N-type GaP exhibits surface Fermi level stabilization at 0.55 eV below the conduction band edge. This is ascribed to an intrinsic empty surface state band in the forbidden zone. On the basis of our experiments together with available data from literature we propose an empirical model for the (110) plane of III–V compounds containing In or Ga as metal and Sb, As or P as non-metal atoms from which the lower edge of the empty surface state band can be predicted. The model indicates that for any of these compounds except for GaP no empty surface state band exist in the band gap on the (110) surface.     

Oxidation and annealing of GaP and GaAs (111)-faces studied by AES and UPS

The annealing behaviour after argon sputtering and the first steps of oxidation of the polar GaP and GaAs (111)-faces are studied by AES and UPS. The Auger spectrum of GaP is briefly discussed. In contrast to GaAs, the GaP surfaces show a gallium accumulation after argon sputtering, but they become stoichiometric by annealing. The photoemission spectra show an additional emission due to oxygen with its maximum at about 5 eV below the valence band edge. The decrease of the emission near the valence band edge by oxidation shows the existence of surface sensitive states. Comparing the results of the two polar faces and for different surface compositions, it is concluded that these states are mainly As- and P-derived, respectively. A linear relationship is found between the UPS and Auger signal of oxygen.     

Reevaluation of bandgap and free exciton binding energy of GaP

Very sensitive measurements on the spectral behaviour of the free-to-bound excitation σ_pl^°(hν) from the valence band to the deep 0 donor in GaP at low temperatures are presented. Evaluation of the threshold energy for the electronic transition, together with the known value of the 0 binding energy, provides a simple and accurate way to determine the indirect bandgap E_g of GaP. Our new value is E_g = 2.3525 ± 0.003 eV at 1.5 K, which gives an exciton binding energy E_x = 24 ± 3 meV, considerably larger than previously used values. These data also imply an upward revision of acceptor binding energies in GaP with 10 ± 2 meV.     

应力对(GaP)1/(InP)1(111)超晶格体内和表面电子结构的影响

考虑到应力对超薄层(GaP)₁/(InP)₁(111)结构中Ga-P和In-P键长的作用为均匀分布的情况,本文提出在紧束缚近似下,将应力的影响直接反映到Harrison的交迭积分项中,并利用Recursion方法全面计算了由Keating模型确定的稳定(GaP)₁/(InP)₁(111)超晶格体内和表面的电子结构,结果表明,这种材料的带隙为1.88eV,它比体材料GaP(2.91eV)和InP(1.48eV)的平均值小 关键词：     

The reactive adsorption of CCl4 on GaAs(100) surfaces at 300 K

Auger electron spectroscopy has been used to monitor the adsorption of CCl₄ on an As-rich GaAs(100) surface at 300 K. Intensities of the Ga (55 eV), As (34 eV), C (270 eV) and Cl (181 eV) transitions have been used to estimate surface number densities at saturation and relative C : Cl stoichiometry of the surface species. Number densities of (4.3 ± 0.2) × 10¹⁴ and (2.0 ± 0.2) × 10¹⁴ cm ⁻² are obtained for carbon and chlorine respectively, suggesting that coverage saturates near one theoretical monolayer and that the C : Cl stoichiometry is approximately 2:1. These data are discussed in terms of a reactive adsorption mechanism.     

Electronic properties of clean and oxygen exposed GaAs (100) surfaces

Both Photoemission Yield Spectroscopy (PYS) and Auger Electron Spectroscopy (AES) have been used in the study of the electronic properties of the clean GaAs(100) surface prepared by IBA procedure and subsequently exposed to oxygen. For the clean GaAs(100)c(8 × 2) surface, the values of the work function and the absolute band bending were 4.20 ± 0.02 eV and −0.23 ± 0.06 eV, respectively, which confirms the pinning of the Fermi level E_F, and two filled electronic surface state bands localized in the band gap below the Fermi level were observed. After exposition of this surface to 10³ L of oxygen, the electronic surface state band localized just below the Fermi level E_F disappeared, and the work function and the absolute band bending increased by only 0.12eV, whereas for the higher oxygen exposures of 10⁴L and 10⁵L, only small increases in the values of the work function and the absolute bending by 0.04 eV and 0.03 eV, respectively, were observed.     

The effect of a weak magnetic field on the mobility of dislocations in silicon

The magnetoplastic effect in dislocation silicon is discovered. It is shown that in the presence of tensile stresses (up to 20 MPa), the mechanically activated path of surface dislocation half-loops is limited mainly by the dynamics of defects in various slip systems relative to the applied load. The activation barriers for the motion of dislocations controlled by various conditions in the temperature range T=850–950 K are E _aF=2.1±0.1 eV and E _aS=1.8±0.1 eV. An increase in the path of surface dislocation half-loops and a change in the activation barriers are detected (E _aF=1.4±0.1 eV and E _aS=1.6±0.1 eV) after subjecting silicon to a magnetic field (B=0.7 T) for 30 min. Possible reasons behind the observed effects are discussed.     

Observation of interface plasmon excitation in photoemission spectroscopy from the heterostructures Cu/RbF/GaAs(100) and Cu/RbF/Ge(100)

Synchrotron radiation photoelectron spectra taken at 100 eV photon energy have been measured to characterize the interface reactions of the metal-insulator-semiconductor systems Cu/RbF/GaAs(100) and Cu/RbF/Ge(100). In comparision, similar sequences are studied on the Cu/GaAs(100) and Cu/Ge(100) interfaces without the RbF interlayer. After Cu-deposition of 1–4 Å on RbF-covered (10–14 Å) GaAs and Ge surfaces, shoulder peaks appear on both the Ga 3d and Ge 3d core levels. The shoulder peaks are shifted 1.1 and 1.4 eV to higher binding energy for the Ga 3d and Ge 3d levels, respectively. The Rb 4p and F 2p peak positions are slightly shifted between 0.25 and 0.5 eV. The broad second Ga 3d and Ge 3d peaks can be correlated to plasmon loss of electrons from these levels in a two-dimensional Rb metal-like layer formed at the Cu/RbF interface. The excitation energy of a Rb surface plasmon in a Cu-Rb-RbF system is calculated to be 1.3 eV.     

An exploratory study of the reactive Ni-GaAs (1 1 0) interface

Soft X-ray photoemission spectroscopy measurements have been carried out on cleaved n-type GaAs (1 1 0) surfaces covered with Ni overlayers ranging in thickness from 0.05 to 53 Å. The results of these room temperature measurements show that we have band bending effects occurring in conjunction with strong interfacial chemical reactions. Deconvolution of the Ga 3d core line into substrate and metallic components shows dissolution of the substrate at the interface with Ga diffusing into the surface of the metal overlayer for the intermediate coverages (1–15 Å). Observation of the As 3d core level shows out-diffusion of As to the surface over the entire Ni coverage range. Using this deconvolution scheme we are able to follow the band bending of the Schottky barrier formed here up to the 8 Å coverage. The Schottky barrier height is 1.0 ± 0.1 eV for this overlayer thickness.     

Core excitons for the (110) surface of zinc blende III–V semiconductors

We present a theory of the binding energy and relative oscillator strengths of surface core excitons on the (110) surface of GaAs, GaP, GaSb, and InP based on a short range potential governing the interaction between the conduction band electron and core hole. We find that the binding energy for p- and d-core excitations on the cation is quite large, a sizeable fraction of an eV. For the anion p- and d-core excitations we find no binding in our model. The oscillator strengths for the cation p-core excitations are found to be a few percent of those for the d-core excitations.     

Electronic structure of the Cu(111) surface

Self-consistent electronic structure calculations are reported on bulk Cu, and 3- and 5-layer Cu films. These yield a size insensitive work function, φ = 5.0±.1 eV, and a surface energy of 0.75 eV, in agreement with experiment. Good size convergence of the film potential permits the construction of a self-consistent potential for an 11-layer Cu(111) film, whose spectral properties we studied. A prominent p-like surface band was found within 0.1 eV of experiment, serving as a check on the surface potential.     

Large-scale Monte Carlo study of a realistic lattice model for Ga(1-x)MnxAs

Mn-doped GaAs is studied with a real-space Hamiltonian on an fcc lattice that reproduces the valence bands of undoped GaAs. Large-scale Monte Carlo (MC) simulations on a Cray XT3, using up to a thousand nodes, were needed. Spin-orbit interaction and the random distribution of the Mn ions are considered. The hopping amplitudes are functions of the GaAs Luttinger parameters. At the realistic coupling J approximately 1.2 eV the MC Curie temperature and magnetization curves agree with experiments for x = 8.5% annealed samples. Mn-doped GaSb and GaP are also briefly discussed.     

Reflectometric study of dangling-bond surface states and oxygen adsorption on the clean Si(111)7 × 7 surface

External differential reflection measurements were carried out on clean Si (111)7 × 7 surfaces in the photon-energy range of 1.0–3.0 eV at 300 and 80 K. The results at 300 K showed a main peak in the joint density-of-states curve for optical transitions from the filled dangling-bond surface-states band to empty bulk-conduction band levels at 2.9 ± 0.1 eV and a shoulder at the low-energy side. At 80 K the shoulder sharpened to a real second peak at 1.76 ± 0.04 eV. Oxygen adsorption in the submonolayer region appeared to take place preferentially on the surface atoms which were responsible for the second peak.     

Effect of strain on the electronic structures of ultrathin layer GaP/InP (111) superlattice: Bulk and surface

We have used the recursion method to calculate bulk and surface electronic structures of a (GaP)₁/(InP)₁ (111) strained-layer superlattice. The obtained energy gap for the stable superlattice is 1.88eV, which is smaller by 0.31eV than the average of the gaps of bulk GaP (2.91eV) and InP (1.48eV). We show how the fundamental gap and the electron occupation can be varied by changing the bond strain in these systems.     

砷化镓上银和金膜的价带光电子谱

木文测量了光子能量为21.2eV,40.8eV和1486.6eV的光电子谱,得到了关于GaAs(110)解理面上银膜的价带能谱新数据,并得到金膜价带能谱的补充数据,蒸发的银膜和金膜的厚度范围为0.l?到1000?,实验上发现并讨论了下面的现象:GaAs(110)面上金膜和银膜的紫外价带光电子谱的强度与膜厚的关系曲线中出现极大峰。 关键词：     

X-ray photoemission study of physically absorbed SF6

The physical adsorption of octahedral SF₆ on Ru(001) has been studied with X-ray photoelectron spectroscopy (XPS) in an attempt to see effects on the energy levels resulting from the conformation of the molecule on the surface. Near 80 K surface coverages up to a monolayer have been studied at various steady state pressures of SF₆. Kinetic studies, core level binding energies, and peak areas indicate that the surface species studied was a physically adsorbed monolayer of sf₆. The sticking coefficient of SF₆, at ? 80 K is approximately unity. Also, a multilayer structure was observed at the highest pressures of SF₆. The binding energy of the F(ls) peak for monolayer coverage is centered at 688.2 ± 0.2 eV relative to the Ru Fermi level. while the multilayer F(ls) peak is shifted more than 3.5 eV to higher binding energy. The F(ls) linewidth for one monolayer has a full width at half maximum of 1.75 ± 0.1 eV. The F(ls) linewidth of the multilayer peak narrows with increasing coverage. Its narrowest observed linewidth was 1.35 eV ± 0.1 eV or approximately the same as that found in the gas phase. One of the mechanisms which may account for the F(ls) linewidth with monolayer coverage is a difference in F(ls) binding energy between those F atoms in contact with the substrate and those further away. This may be due to the variation in chemical environment and relaxation effects as a function of distance from tlie substrate. A classical image force calculation including finite screening effects of the substrate indicates that there is a differential binding energy, ΔW. between the F ligands; ΔW = 0.85 ± 0.25 eV, for realistic ranges of adsorption distances from the substrate and screening lengths in the substrate. The observed broadening of the monolayer F(ls) level is consistent with a ΔW of 0.7 ± 0.1 eV, indicating the possible existence of such a mechanism. Adsorption of a monolayer of SF₆ onto the Ru covered with a monolayer of oxygen shifts the F(ls) peak to lower binding energy by 0.8 eV. Similar effects due to oxygen have been observed previously in the physical adsorption of Xe on W(111).