Electron–hole superlattices in GaAs/Al x Ga1− x As multiple quantum wells

A GaAs/Al _x Ga_{1? x} As semiconductor structure is proposed, which is predicted to superconduct at T _c?≈?2?K. Formation of an alternating sequence of electron- and hole-populated quantum wells (an electron–hole superlattice) in a modulation-doped GaAs/Al _x Ga_{1? x} As superlattice is considered. This superlattice may be analogous to the layered electronic structure of high-T _c superconductors. In the structures of interest, the mean spacing between nearest electron (or hole) wells is the same as the mean distance between the electrons (or holes) in any given well. This geometrical relationship mimics a prominent property of optimally doped high-T _c superconductors. Band bending by built-in electric fields from ionized donors and acceptors induces electron and heavy-hole bound states in alternate GaAs quantum wells. A proposed superlattice structure meeting this criterion for superconductivity is studied by self-consistent numerical simulation.     

Collective modes of a superlattice - plasmons,LO phonon-plasmons,and magnetoplasmons

The wavevector-frequency dependent dielectric constant is investigated for a superlattice structure. Attention here is focused on the collective modes of the GaAs-GaAlAs superlattice with doped (or modulated doped) quantum wells. For wells widely separated in space, such that Bloch wave function overlap between wells is negligible, a Bloch-like plasmon can propagate along the superlattice direction mediated entirely by Coulomb interaction alone. Interaction of these plasmons with optical phonons and with a magnetic field is investigated.     

A non-Boltzmann balance equation approach to electronic transport in a type-I superlattice

Force and energy balance equations are derived for steady state hot electron transport in a type-I superlattice composed of periodically arranged finite-width quantum wells. The scatterings by remote and background impurities and by acoustic and polar optical phonons are taken into account, together with Coulomb interactions between intralayer electrons and interlayer electrons. The carrier mobility and electron temperature are calculated as functions of drift velocity ν up to ν=3×10⁷ cm / s, showing significant nonlinearity and dependence on geometrical superlattice parameters (quantum well width and separation, etc.)     

Instability of dipole magnetoexcitons in quantum wells' and graphene superlattices

We propose the Bose-Einstein condensation and superfluidity of quasi-two-dimensional spatially indirect magnetobiexcitons in a slab of superlattice with alternating electron and hole layers consisting from the semiconducting quantum wells (QWs) and graphene superlattice in high magnetic field. For this system the instability of the ground state of interacting two-dimensional indirect magnetoexcitons in a slab of superlattice with alternating electron and hole layers in high magnetic field is found. The density of superfluid component ns(T) and the temperature of the Kosterlitz-Thouless phase transition to the superfluid state in the system of two-dimensional indirect magnetobiexcitons, interacting as electrical quadrupoles, are obtained for both QW and graphene realizations.     

Electron tunneling in the GaAs/AlAs(111) structures with a smooth potential at heteroboundaries

The effect of smooth interface potential on the electron tunneling in the GaAs/AlAs(111) structures with thin layers is studied using the pseudopotential method. The transition region between the structure components is represented by a half-period of the hexagonal (GaAs) ₃(AlAs)₃ (111) superlattice. It is shown that the allowance for the smooth potential results in a decrease in the Γ-L-mixing, Fano-resonance narrowing, and disappearance of interface states at the GaAs/AlAs(111) interface as compared to the abrupt-interface model. The shifts of the lowest Γ-and L-resonances observed for the structures with the layer thickness <2 nm amount to ∼0.1 eV, which is in good agreement with the behavior of levels in quantum wells. The transmission coefficient of electrons with the energies 0–0.5 eV above the GaAs conduction-band bottom obtained by multivalley calculation is close to that calculated with allowance for the lowest conduction band states Γ ₁ ⁽¹⁾ and Γ ₁ ⁽²⁾ of superlattice and Γ ₁ and L ₁ of binary crystals. This indicates that a two-valley superlattice model of the smooth GaAs/AlAs(111) interface can be developed. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 7–13, July, 2007.     

Band structure of non-ideal semiconductor superlattices

An ideal superlattice is an array of two (or more) alternating layers of materials with a single period, fixed barrier height and infinitely abrupt interfaces. A real superlattice differs from an ideal one in many aspects and this affects the band structure. They include unsharp interfaces, interface disorder, small fluctuations in thicknesses of quantum wells (barriers) and in the potential barrier heights from layer to layer. The band structure of superlattices in these realistic cases have been investigated. The relevance of these non-ideal cases to the shifting of the ground-state energy of the electrons, holes, and the effective energy gap are also discussed.     

Raman spectroscopy study of lattice dynamics of macro-, micro-, and nanostructured barium titanates

The temperature dependences of the components A ₁(2TO) and E(1TO) of the soft ferroelectric mode during phase transitions in single crystals, ceramics, polycrystalline and epitaxial thin films of barium titanate, as well as a superlattice consisting of alternating layers of barium and strontium titanates, have been studied using the Raman spectroscopy method. Abrupt changes in soft mode frequencies have been observed in the single crystal during phase transitions between tetragonal, orthorhombic, and rhombohedral phases. Smoothing of the temperature dependences of soft modes and the coexistence of phases have been observed in ceramics and polycrystalline films. In the epitaxial film, the sequence of structural transformations fundamentally differs from that observed in the single crystal; in the superlattice, the ferroelectric phase is stable to 550 K.     

Influence of the Miniband Width on the Relaxation Time of Superlattice Electrons Scattered by Impurity Ions

Based on the Boltzmann equation, the influence of the miniband width on the relaxation time of nondegenerate electrons scattered by impurity ions in the GaAs/Al _x Ga_1–x As superlattice with doped quantum wells is numerically analyzed. The wave function being the eigenfunction of the ground state of the lower miniband of the superlattice is used to calculate the scattering probability. The dispersion of the longitudinal and transverse relaxation times versus the longitudinal wave vector is investigated.     

Efficient spin filtering in a disordered semiconductor superlattice in the presence of Dresselhaus spin-orbit coupling

The influence of the Dresselhaus spin-orbit coupling on spin polarization by tunneling through a disordered semiconductor superlattice was investigated. The Dresselhaus spin-orbit coupling causes the spin polarization of the electron due to transmission possibilities difference between spin up and spin down electrons. The electron tunneling through a zinc-blende semiconductor superlattice with InAs and GaAs layers and two variable distance In_xGa_(1−x)As impurity layers was studied. One hundred percent spin polarization was obtained by optimizing the distance between two impurity layers and impurity percent in disordered layers in the presence of Dresselhaus spin-orbit coupling. In addition, the electron transmission probability through the mentioned superlattice is too much near to one and an efficient spin filtering was recommended.     

Particular nanowire superlattice as a spin filter

A nanowire superlattice of InAs and GaAs layers with In_0.47Ga_0.53As as the impure layers is proposed. The oft-neglected k³ Dresselhaus spin-orbit coupling causes the spin polarization of the electron but often can produce a limited spin polarization. In this nanowire superlattice, Dresselhaus term produce complete spin filtering by optimizing the distance between the In_0.47Ga_0.53As layers and the Indium (In) in the impure layers. The proposed structure is an optimized nanowire superlattice that can efficiently filter any component of electron spins according to its energy. In fact, this nanowire superlattice is an energy dependent spin filter structure.     

The role of layer-thickness deviation in dispersion and structure of plasmons in finite superlattices

We study the effects of layer thickness variations on the collective plasmon excitation modes of finite superlattices. Unlike other symmetry lowering mechanisms, thickness variation does not strongly localize the surface modes. We find that the reason for this insensitivity lies in the fact that the collective modes of a given finite structure must evolve continuously from the single-finite-superlattice at zero thickness deviation into modes of a pair of uncoupled finite structures at large thickness variation. We also show that this behavior is analogous to the evolution of molecular orbitals from atomic orbitals as the internuclear separation is reduced, in contrast to the analogy of the superlattice modes as a stack of coupled quantum wells. This emphasizes the difference between the electromagnetic symmetry of the finite superlattice and the structural symmetry. Received 16 April 2001 and Received in final form 6 July 2001     

Delocalization of phonon-plasmon modes in GaAs/AlAs superlattices with tunnel-thin AlAs barriers

The technique of Raman spectroscopy has been used to investigate doped (n-type) and undoped GaAs/AlAs superlattices with AlAs barrier thicknesses from 17 to 1 monolayers. The peak corresponding to the scattering by a two-dimensional plasmon was found in the Raman spectrum of a doped superlattice with relatively thick barriers. The position of the experimental peak corresponded to the value calculated in the model of plasma oscillations in periodic planes of a two-dimensional electron gas. The electron tunneling effects played an increasingly prominent role as the AlAs barrier thickness decreased. The peaks corresponding to the scattering by coupled phonons with three-dimensional plasmons were found in the Raman spectra for a superlattice with an AlAs thickness of 2 monolayers; i.e., the delocalization of coupled modes was observed. In this case, the folding of acoustic phonons was observed in the superlattice under consideration, indicative of its good periodicity, while the localization of optical phonons in GaAs layers was observed in undoped superlattices with an AlAs thickness of 2 monolayers.     

Quasiperiodic magnonic superlattices with mirror symmetry

We address the spin wave modes propagating in Fibonacci, Thue–Morse, and double period quasiperiodic magnonic superlattices. These structures are made of layers of a metamagnetic material alternating with layers of a nonmagnetic material, presenting mirror symmetry. Our calculations are carried out in the magnetostatic regime for the antiferromagnetic phase. Our model takes into account the presence of an external applied magnetic field, which is perpendicular to the interfaces of the superlattice, as well as the crystalline anisotropic contribution to the inner magnetic field. The magnetostatic bulk and surface modes are obtained by using the transfer matrix technique. The metamagnetic material considered here is FeBr₂, however, our results can be extended to other materials. Our numerical results show the behavior of these modes, for small frequencies of the energy spectra. The results reported here can be experimentally observed by light scattering techniques.     

Plasmon modes of a superlattice — Classical vs quantum limits

The collective plasmon excitations of a superlattice are investigated in both the classical and quantum limits. Using a model that is applicable to superlattices whose constituent layers are either semiconductor- semiconductor, semiconductor-metal, or metal-metal, we show that the surface plasmon interface modes of each layer (slab) couple via the long range Coulomb interaction into two bands of plasmons with dispersion along the superlattice axis. Results for plasmon dispersion are presented for the classical limit (de Broglie wavelength less than the layer width) where the response is treated via a solution of Maxwell's equations using the bulk 3-D dielectric constant to describe each intervening layer. These results are compared to the plasmon dispersion in the quantum regime where the wave-vector frequency dependent dielectric constant of the superlattice is calculated taking into account quantization effects (subband structure). The relationship between the modes in both limits is derived.     

Long-wavelength optical phonons in the ZnTe/Zn<Subscript>0.8</Subscript>Cd<Subscript>0.2</Subscript>Te superlattice

The lattice IR reflection spectra of a ZnTe/Zn_0.8Cd_0.2Te superlattice measured at temperatures of 300 and 10 K are analyzed. The ZnTe/Zn_0.8Cd_0.2Te superlattice is grown by molecular-beam epitaxy on a GaAs substrate with a ZnTe buffer layer. It is found that the lattice IR reflection spectra of the studied structure exhibit only one reflection band. Dispersion analysis of the experimental spectrum has revealed the presence of one lattice TO mode close in frequency to the mode of pure ZnTe. This result is explained by a shift in the frequency of the lattice modes of the ZnTe and Zn_0.8Cd_0.2Te layers of the superlattice toward each other. In turn, this shift is caused by internal elastic stresses in the superlattice due to a mismatch between the lattice parameters of the materials of these layers.     

侧向铁磁/铁磁超晶格的推迟模式

用等效介质理论计算了半无限侧向铁磁/铁磁超晶格的推迟模式.且以Co/Ni体系超晶格为例具体计算了该超晶格的表面模式和体模式,展示出一些与磁性/非磁性超晶格不同的有趣性质.侧向磁性/磁性超晶格具有较复杂的推迟模式,这是一种具有高度一般性的体系,在改变构成超晶格的两种铁磁层的厚度的比值、外场时,可以调节两支表面模式的频率以及体模式的频带,这种调节作用是与两种铁磁层的饱和磁化值有关的.当饱和磁化值相差较大时,调制效果是很明显的.当第二种铁磁介质饱和磁化值趋于零时,该体系演变成熟知的磁性/非磁性超晶格.当取麦克斯 关键词： 铁磁/铁磁超晶格 推迟模式 等效介质理论 自旋波谱     

Dispersion of acoustic phonons in layered SrGa2

Acoustic phonon dispersion curves have been determined by inelastic neutron scattering in the intermetallic compound SrGa₂. This compound crystallizes in the AlB₂ type of structure which contains alternating planar Sr and Ga layers normal to the c-axis. The dispersion of the acoustic modes of the three principal directions revealed no strong two dimensional character in terms of sound velocities and elastic constants.     

Cascade theory of electron capture in quantum wells

A cascade theory of electron capture in shallow quantum wells, when the capture process is determined by the interaction with acoustic phonons, is constructed. In these conditions, the ejection of electrons falling into a well back to the conduction band is significant. The possibility of electron ejection is taken into account by introducing an sticking probability for electrons located in the well. Such an approach is analogous to the Lax cascade theory of electron capture at small impurity centers. Calculations have been performed for wells 3 and 4 nm in width in the Al_0.05Ga_0.95As/GaAs/Al_0.05Ga_0.95As heterostructure. The developed theory has also made it possible to describe thermal ejection of electrons from shallow quantum wells.     

Relaxation processes and mobility of electrons in a semiconductor quantum well with the modified Pöschl-teller confining potential

Relaxation processes and mobility of electrons in a semiconductor quantum well are studied. The modified Pöschl-Teller potential is used as a confining potential. Scattering rates due to impurity ions, acoustic and piezoacoustic phonons are calculated taking into account the screening of scattering potentials by charge carriers. It is shown that when degenerate electrons are scattered by acoustic phonons, the dependence of scattering rate on electron wave number ν_ac(k) is almost linear. At small k, the acoustic phonon piezoelectric scattering rate of degenerate electrons increases with k, and then it decreases slightly when k > 8 × 10⁷ m⁻¹. The ionized impurity scattering rate of degenerate electrons does not depend on temperature, is directly proportional to the electron density, and decreases with increasing k. Dependences of electron mobility on surface ion density and temperature are studied. It is shown that in the case of non-degenerate or slightly degenerate electron gas, a maximum appears in the temperature dependence of the mobility, and the screening effect is negligible. The screening significantly increases the mobility of electrons in the case of high degeneration. Obtained results are applied to GaAs-based quantum wells.     

(CdSe)1(ZnSe)3/ZnSe短周期超晶格多量子阱的共振Ramam谱

在(CdSe)₁(ZnSe)₃/ZnSe短周期超晶格多量子阱中,根据一维线性链模型计算的结果与实验结果的比较表明,我们在不同的共振条件下分别观察到了来自多量子阱的阱中和垒中ZnSe限制纵光学声子模的Raman散射。与GaAs/AlAs量子阱的偏振选择定则不同,在共振条件下,我们在两种偏振配置下都观察到了阱中ZnSe限制模LO₁,并认为这种不同可能来源于样品特殊的电子子带结构和光学声子行为。 关键词：