首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 31 毫秒
1.
I P Krylov  Ya B Pojarkov 《Pramana》1987,28(5):604-604
We have studied PbTe films of thicknessd=200/10000 A made with telluride vapour deposition on glass substrate at room temperature. The estimate of the donor concentration ~1019 cm?3 of the fresh-deposited film compared with the impurity content in the bulk raw material ~1017 cm?3 shows that the donors were mainly film defects or nonstoichiometric Pb atoms. Electrical conductivity of the freshly deposited film increased with lowering of the temperature. After deposition the donors were compensated with an oxidation in the laboratory air. Transition to the thermally activated conductivity resulted from oxidation. At temperatures belowT≈100 K the resistance of the compensated films followed Mott’s ruleR=R 0 exp(T 0/T)1/3. The square film value 1 Mohm andT 0≈100 K ford=1000 A. At low temperatures an exposure to light resulted in sharp decrease of the film resistance. At liquid helium temperatures the resistance dropped 103–106 times and stayed at the low value for an indeterminate time. The heating of the film aboveT=100 K gave rise to an initial high resistive state. The critical temperatureT c, when the frozen photoconductivity became negligible, varied with samples in the temperature region 90–120 K. Near the critical temperature we could measure the time dependence of the film resistance after the light exposure, which followed the equationR=A+B.lnt fort>1 sec with the empirical constantsA andB. After a time intervalτ the resistance gained the initial “dark” value and remained stationary. The value lnτα.(T c?T), where the factorα approximately wasα≈0.5 K?1. Some results of these experiments were published earlier (Krylov and Nadgorny 1982; Krylov and Pojarkov 1984).  相似文献   

2.
Below T2 = 202 K, in the incommensurate phase, a Debye relaxation appears for c33; it can be attributed to a linear coupling between an acoustical mode and a phason. The relaxation time is τ = τ0/(T0?T) with τ0 = 6.2 x 10?12 sec deg and T0 = 200.9 K. The same phenomenon appears more weakly for c11. The c66 elastic constant has a double discontinuity around T1 = 169 K; this shows that in the vicinity of T1 there are two transitions, separated by a temperature interval of 3°.  相似文献   

3.
The influence of scattering by nonmagnetic impurities is studied in perturbation theory. While the finite lifetime of the electrons in intermediate states due to scattering by nonmagnetic impurities does not lead to a change in the logT-behaviour of the third-order self-energy, certain vertex-corrections give rise to an additional term which varies like 1/√T at low temperatures. Similar correction terms are found to occur in the higher order self-energy contributions. Although these terms diverge more strongly atT=0 than the logarithmic contributions they are quite small at finite temperatures since they depend on the lifetime τ of the electrons through a factor of (? F τ)?5/2 (? F Fermi energy). The possibility of observing these interference effects experimentally is discussed.  相似文献   

4.
The effect of chemical composition and temperature on exciton-magnon interactions in NicMg1?c O single crystals was studied using optical absorption spectra in the region of the magnetic-dipole 3 A 2g (G)→3 T 2g (F) and electric-dipole 3 A 2g (F)→1 E g (D) transitions. The two zero-phonon lines at ~7800 and ~7840 cm?1 on the low-energy side of the magnetic-dipole transition band were assigned to a pure exciton transition and an exciton-one-magnon transition at the center of the Brillouin zone. The intensity of the exciton-one-magnon peak decreases rapidly with increasing magnesium ion concentration and/or temperature, to vanish altogether at T=6 K for c<0.95 and at T=130 K for c≥0.99. Thus, the contribution of long-wavelength magnons in optical absorption spectra of NicMg1?c O becomes negligible at temperatures substantially lower than the Néel point T N (the antiferromagnetic ordering temperature). This observation can be explained as being due to a substantial decrease in the characteristic spin-spin interaction length with increasing concentration of the diamagnetic magnesium impurity ions (static disorder) and/or with increasing amplitude of thermal atomic vibrations (dynamic disorder). At the same time, the peak at ~14500 cm?1, which lies in the electric-dipole transition region and corresponds to excitation of an exciton and two magnons at the Brillouin zone edge, remains visible up to the Néel temperature. This is accounted for by the short-wavelength magnons being sensitive to short-range magnetic order, which persists up to T N .  相似文献   

5.
Measurements of the electrical conductivity, magnetoresistance, and Hall effect were performed on a n-type ferromagnetic semiconductor HgCr2?xInxSe4(x = 0.100) single crystal from 6.3 to 296 K in magnetic fields up to 1.19×l06A/m. The conductivity decreases rapidly near the Curie temperatureTc (≈120 K) as the temperature is raised. A large peak in the magnetoresistance is observed near Tc. The Hall effect measurements indicate that the temperature dependence of the conductivity and the magnetoresistance are due mostly to a change in electron mobility. The electron mobility is 1.2 × 10?2 m2/V · s at 6.3 K, and decreases rapidly near Tc with the rise in temperature. Then it increases slowly from 5.5 × 10?4 m2/V · s at 160 K to 7.5 × 10?4 m2/V · s at 241 K. This temperature dependence of the electron mobility can be explained in terms of the spin-disorder scattering which takes into account the exchange interaction between charge carriers and localized magnetic moments.  相似文献   

6.
Results of measuring small-angle neutron scattering and neutron depolarization in a Ni49.1Mn29.4Ga21.5 single crystal in the temperature range 15<T<400 K and in the range of magnetic fields 0<H<4.5 kOe are presented. The characteristic temperatures of the alloy were found to be as follows: T C=373.7 K and the martensite transition temperature T m=301–310 K. The magnetic critical scattering at T C and the scattering at T<T C were adequately described by the relationship I m=A(q 22)?2 (q is the transferred wave vector and R c=1/κ is the correlation radius), and the temperature dependences of the A and R c scattering parameters were determined. Left-right asymmetry was observed at 150<T< T m in the scattering of neutrons polarized along or opposite to the applied field. This asymmetry was due to the inelastic magnetic interaction of neutrons in the sample. The magnetization of the alloy at T m, critical scattering at T?T C, anomalies in scattering, and the softening of magnetic excitations at 150 <T<T m are discussed.  相似文献   

7.
The far IR cyclotron resonance of conduction electrons is investigated in n-type indium antimonide in the quantum regimes, ckBT and c?kBT. The resonance peak position, half width, and the degree asymmetry in the line shape are studied as a function of temperature. In analyzing the experimental data, the three band model has been employed together with modern theoretical results of electron scattering by ionized impurities in the presence of a strong magnetic field. It is found that, for example for an experiment at 84 μm, the Une width depends very little on temperature between 4.2 and 45 K where the ionized impurity scattering is dominant, and increases rapidly with temperature above 45 K where the onset of phonon scattering is expected. Further details of the ionized impurity scattering were investigated by using three different laser wavelengths 84, 119 and 172μm. The line width at the phonon-limited temperature region depends very little on magnetic field and sample. The temperature dependence of the band gap was also determined by analysis of the resonance peak shift.  相似文献   

8.
Electron spin resonance linewidths of ions belonging to the first transition group with quenched orbital angular momentum are calculated using a modified relaxationmatrix theory including third and fourth order perturbation terms. We base our calculation on a Hamiltonian, which depends on electron spin, nuclear spin, orbital angular momentum, rotation of the whole complex, and vibration of the ligands. Quadrupol effects, intermolecular electron-electron and electron-nucleus interactions are neglected. The results show that the well-known formula of the transverse relaxation time derived by using the spin-Hamiltonian is correct, if first the contribution of the rotational spin orbit process is taken in consideration and second the rotational correlation timeτ c is replaced byτ v =(1/τ c +1/τ(0))?1. 1/τ(0) describes the linewidth of the lowest energy value of the electrostatic energy of unpaired electrons in the ligand field. The linewidth arises from the normal modes of the complex; the calculation gives τ(0)=l0?11...10?12 sec.  相似文献   

9.
A. Asif 《哲学杂志》2013,93(12):1811-1820
Available data on the temperature and concentration dependence of critical resolved shear stress (CRSS) of KCl–KBr solid-solution crystals containing 9, 17, 27 and 45?mol% KBr in the temperature range 77–230?K have been analyzed within the framework of the kink-pair nucleation model of plastic flow in solid- solution crystals. It is found that CRSS τ decreases with increasing temperature T in accordance with the model relation lnτ?=?A???BT, where A and B are positive constants. The CRSS τ at a given temperature depends on solute concentration c as τ?∝?cp , where exponent p has a value between 0.33 and 0.57 as temperature T rises from 0 to 230?K. The model parameter W o, i.e. binding energy between the edge-dislocation segment L o involved in the unit activation process and the solute atoms close to it (T?→?0?K), which is inversely proportional to B, increases with solute concentration c monotonically as W o?∝?c 0.33 up to a critical value c m?=?35?mol% KBr, which is in reasonable agreement with the model prediction W o?∝?c 0.25. However, W o decreases with an increase in c beyond c m, which indicates somewhat ordered distribution of solute in the host lattice of concentrated KCl–KBr solid solutions with c?>?c m.  相似文献   

10.
The temperature dependence of a zero-bias anomaly in the tunneling conductance of an Al/δ-GaAs tunneling structure with a two-dimensional electron density in the δ-layer of 3.5 × 1012 cm?2 has been investigated. It has been shown that the respective drop Δρ(?, T) in the tunneling density of states ρ near the Fermi level E F of the two-dimensional electron system depends logarithmically on the energy ? within the range of 2.7kT < |?| < ?/τ, where ? is measured with respect to E F and τ is the momentum relaxation time of two-dimensional electrons. It has been found that the drop depth Δρ(0, T)/ρ is also proportional to ln(kT/?0) in the temperature range T = 0.1–20 K and saturates below 0.1 K.  相似文献   

11.
The superconducting transition temperature, Tc, of the LaT4P12 compounds with T = Fe, Ru, or Os has been measured under hydrostatic pressure P up to 1.8 GPa. The T = Fe compound exhibits a substantial increase of Tc from Tc (P = 0) = 4.1 K at a rate (dTc/dP)P=0= +7.2 x 10-1 K/GPa. In contrast, the Ru and Os compounds exhibit only weak decreases of Tc from Tc (P = 0) = 7.2 K and 1.8 K with (dTc/dP)P=0= -1.6 x 10-1 K/GPa and -9.5 x 10-2 K/GPa, respectively. An analysis of this strikingly divergent behavior of Tc(P) in terms of the structural characteristics of the RT4X12 class of compounds where R = rare earth element, T = Fe, Ru, or Os, and X = P, As, or Sb suggests that Tc(P) for these materials consists of two competing contributions: a depression of Tc due to the compression of the lattice (i.e., decrease in volume), and an enhancement of Tc due to the effect of pressure on La itself.  相似文献   

12.
The equation of state obtained earlier /6/ for 3-dimensional Ising ferromagnets in the first order in1z (z is the number of the nearest neighbours) is generalized with regard to the classical D-component vector model. The results obtained are valid in a wide temperature range |τ|?[z2(D+2)]?1 (τ=(Tc-T)/Tc) and become exact in the limit D → ∞.  相似文献   

13.
The Hall effect measurements performed in the layer compound α-RuCl3 show that, in the sheets perpendicular to the c-axis, μ(300 K) ? 0.2 cm2V sec?1; the temperature dependence of μ appears to be μ(T) = μ0T-n, with n = 2.3 ± 0.1, in the 180–320 K range. The transport appears to be due to electrons that move with a band type of mechanism, the main scattering process being due to the homopolar high energy phonons which modulate the thickness of the layers.  相似文献   

14.
The lattice parameters a0 and c0 of the hexagonal 2H polytype of NbSe2; have been measured over the temperature range 156–478 K for a0, and 138–482 K for c0. The lattice parameter c0 of the hexagonal 2H polytype of TaS2 has been measured between 151 and 472 K. The lattice parameters a0 and c0 for the octahedral 1T polytype of TaS2 been measured between 165 and 488 K. Over these temperature ranges, the following average coefficients of thermal expansion have been measured; 2H-NbSe2, 6.6 × 10?6K?1 along the a-axis, 19.9 × 10?6 K?1 along the c-axis; 2H-TaS2, 15.6 × 10?6 K?1 along the c-axis; IT-TaS2, 12.7 × 10?6 K?1 along the c-axis. The parameter c0 of 1T-TaS2 undergoes two transitions which may be explained in terms of charge density waves.  相似文献   

15.
A semi phenomenological dynamical theory for the rotations of the BO6 octahedra in ABO3 perovskites is proposed, which accounts for the soft mode and the central peak forTT c observed by neutron scattering in SrTiO3. The neutron scattering cross section is discussed. The EPR line width is predicted to diverge as ?(1–2η) and as ?(2–2η) for three- and two dimensional correlations with ?=(T-T c )/T c . The theory is generalized to other structural transitions.  相似文献   

16.
The temperature dependences of the coefficient of the transverse Nernst-Ettingshausen effect in SnTe: In samples with different indium contents (1–16 at %) in the temperature range 100–300 K and the electrical resistivity at temperatures of 1.2–4.2 K and in magnetic fields of up to 10 kOe are investigated. The data obtained indicate the presence of resonant hole scattering into the band of quasi-local In impurity states in Sn1?x In x Te samples with In content x ≥ 0.05 and a superconducting transition with a critical temperature T c ~ 1.5–2.2 K. The SnTe: In samples with the degree of filling of impurity states by electrons, which is close to 1/2, and the Fermi level ?F pinned in the vicinity of the minimum energy dependence of the relaxation time τ(?) are characterized by inhomogeneities of a new type, i.e., inhomogeneities of the scattering parameter r = ?lnτ/?ln?| $ \varepsilon _F The temperature dependences of the coefficient of the transverse Nernst-Ettingshausen effect in SnTe: In samples with different indium contents (1–16 at %) in the temperature range 100–300 K and the electrical resistivity at temperatures of 1.2–4.2 K and in magnetic fields of up to 10 kOe are investigated. The data obtained indicate the presence of resonant hole scattering into the band of quasi-local In impurity states in Sn1−x In x Te samples with In content x ≥ 0.05 and a superconducting transition with a critical temperature T c ∼ 1.5–2.2 K. The SnTe: In samples with the degree of filling of impurity states by electrons, which is close to 1/2, and the Fermi level ɛF pinned in the vicinity of the minimum energy dependence of the relaxation time τ(ɛ) are characterized by inhomogeneities of a new type, i.e., inhomogeneities of the scattering parameter r = ϖlnτ/∂lnɛ|, which are induced by fluctuations of the degree of filling of quasi-local states by electrons. Original Russian Text ? S.A. Nemov, V.I. Proshin, G.L. Tarantasov, R.V. Parfen’ev, D.V. Shamshur, A.V. Chernyaev, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 3, pp. 461–464.  相似文献   

17.
The angular and temperature dependences of the spin-lattice relaxation (SLR) rate of Vk-centers in LiF doped with Mg or Ag have been investigated. In the temperature interval 4.2–100 K the results can be fitted by the formula τ?1 = A(θ)T + BeT with A(0°) = 0.11 sec?1K?1, A(90°) = 1.3 sec?1K?1, B = 3 × 105sec?1 and Δ = (175 ± 15)K.A mechanism for the SLR is considered, assuming the modulation of the hyperfine interaction by phononinduced transitions between the ground and excited states of the resonant molecular vibrations of the Vk-center. This mechanism is found to explain the value, the temperature dependence and the isotropy of τ?1 in the interval T = 20–100 K.The one-phonon SLR mechanisms of the Vk-center in the T < 10 K region are discussed.  相似文献   

18.
The pressure dependence of the superconducting transition temperatureT c (p) of α-Zr has been investigated in both solid and liquid pressure transmitting media. Up to about 45 kbardT c /dp was measured to be + 3.5 × 10?6 K/bar. Cold working at 4.2 K produced a strong irreversible effect onT c . The superconductivity of the high pressure phase, ω-Zr, has been studied in its region of stability, i.e. above 60 kbar. For ω-Zr,dT c /dp=+7.7 × 10?6K/bar, andT c (0)=0.72 K (by extrapolation).  相似文献   

19.
The temperature dependence of the anisotropic critical scattering of neutrons from a nickel single crystal was observed under the influence of elastic uniaxial mechanical stress of 140 g/mm2. The temperature was varied between 10-4 < τ = [T ? Tc(Δ)]/Tc(0) < 10-2, and the momentum transfer between 1.4 × 10-3 < q = (2π/λ) sin θ < 6.6 × 10-3A?-I. The expected crossover from isotropic (Heisenberg) to anisotropic (XY) behaviour should occur between 10-5 < τ < 10-3, in good agreement with the experimental result.  相似文献   

20.
The dependence of the magnetization relaxation rate S = ?d lnM/dlnt on temperature T is measured in YBa2Cu3O7 ? δ samples with various oxygen concentrations. It is found that the S(T) curve changes qualitatively when oxygen deficit δ exceeds the threshold value δth = 0.37. For δ < δth (T c > 60 K, where T c is the superconducting transition temperature), function S(T) has the well-known peak at T/T c = 0.4. For δ > δth (at T c < 51 K), this peak transforms into a plateau and a new sharp peak appears at T/T c = 0.1. The threshold value δth of the oxygen deficit corresponds to the transition of the sample from the disordered state into the ordered state of oxygen vacancies. We consider the change in the shape of the S(T) curve as a macroscopic manifestation of this transition.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号