Transient-diffusion effects

Transient effects on diffusion and activation during post-implantation anneals are a major obstacle for the further miniaturization of ultra-large-scale integrated semiconductor devices. The article reviews recent developments in the simulation of such phenomena with particular emphasis on models for the kinetics of self-interstitial agglomerates and boron–interstitial clusters. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-9131/761-212, E-mail: pichler@iis-bfhg.de     

Group-IV nanocluster formation by ion-beam synthesis

A short review of our investigations devoted to the use of ion-beam-synthesized nanoclusters for silicon-based light emission and nonvolatile memory effects is presented. Blue-violet light emission is demonstrated based on Ge-implanted silicon dioxide layers thermally grown on silicon substrates. This version of silicon-based light emission relies on Ge-related defects in the amorphous ≡Si–O–Si≡ network. The photoluminescence and electroluminescence are excited by a singlet S₀–S₁ transition of a neutral oxygen vacancy and by electron injection from the silicon substrate into the silicon dioxide layer, respectively. Whereas the photoluminescence excitation is a well-known mechanism, for the case of electroluminescence an interpretation was performed for the first time in the course of our studies. It was found that the most probable way to excite luminescence centers is the impact excitation by hot electrons. Whereas the injection is explained by trap-assisted tunneling of electrons from the substrate into the oxide, the electrons will be transported via traps or in the SiO₂ conduction band. The application of the silicon-based light-emitting devices for an integrated optocoupler arrangement is described. Another application of nanoclusters is based on the investigation of thin Si-implanted silicon dioxide layers for nonvolatile memory devices. First promising results demonstrate that the observed programming window can reach several volts and the devices exhibit excellent retention behavior. A 256 K-nv-SRAM is demonstrated showing a programming window of >1 V for write pulses of 12 V/8 ms. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-351/260-3411, E-mail: w.skorupa@fz-rossendorf.de     

Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation

The effect of gamma irradiation on the interface states of ion-implanted MOS structures is studied by means of the thermally stimulated charge method. 10-keV oxygen- or boron- (O⁺ or B⁺) implanted samples are gamma-irradiated with ⁶⁰Co. Gamma irradiation creates electron levels at the SiSiO₂ interface of the samples in a different way depending on the type of the previously implanted atoms (O⁺ or B⁺). The results demonstrate that the concentration of the shallower levels (in the silicon band gap) of oxygen-implanted samples increases more effectively after gamma irradiation. The same irradiation conditions increase more intensively the concentration of the deeper levels (in the silicon band gap) of boron-implanted samples. Received: 17 June 2002 / Accepted: 31 August 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +359-2/975-3236, E-mail: kaschiev@issp.bas.bg     

Development of a cw-laser-based cavity-ringdown sensor aboard a spacecraft for trace air constituents

The progress in the development of a sensor for the detection of trace air constituents to monitor spacecraft air quality is reported. A continuous-wave (cw), external-cavity tunable diode laser centered at 1.55 μm is used to pump an optical cavity absorption cell in cw-cavity ringdown spectroscopy (cw-CRDS). Preliminary results are presented that demonstrate the sensitivity, selectivity and reproducibility of this method. Detection limits of 2.0 ppm for CO, 2.5 ppm for CO₂, 1.8 ppm for H₂O, 19.4 ppb for NH₃, 7.9 ppb for HCN and 4.0 ppb for C₂H₂ are calculated. Received: 3 April 2002 / Revised version: 3 June 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-202/994-5873, E-mail: Houston@gwu.edu     

Chemical sensing with pulsed QC-DFB lasers operating at 15.6 micrometers

Pulsed thermoelectrically cooled QC-DFB lasers operating at 15.6 μm were characterized for spectroscopic gas sensing applications. A new method for wavelength scanning based on repetition rate modulation was developed. A non-wavelength-selective pyroelectric detector was incorporated in the sensor configuration giving the advantage of room-temperature operation and low cost. Absorption lines of CO₂ and H₂O were observed in ambient air, providing information about the concentration of these species. Received: 29 April 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-713/348-5686, E-mail: akoster@rice.edu     

Nanoscale domain switching mechanism in Pb(Zr,Ti)O<Subscript>3</Subscript> thin film

Pb(Zr,Ti)O₃ (PZT) ferroelectric thin film was prepared by the sol-gel technique and crystallized with a (111) preferred orientation. The domain structure and polarization reversal behavior were investigated by using scanning force microscopy (SFM) piezoresponse mode at the nanometer scale. A step structure of approximately 30 nm in width was directly observed, which was formed during the polarization reversal process. The presence of the step structure reveals that the forward domain-growth mechanism is the dominant domain-switching process in our PZT thin films. Received: 6 August 2002 / Accepted: 9 August 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +86-21/5241-3122, E-mail: huarongzeng@163.net     

Trace complex-molecule detection using near-IR diode lasers

The goal of the present paper was to develop an experimental technique to detect trace concentrations of complex molecules in the atmosphere using near-IR diode lasers. Ethanol and propane were chosen as model species. New optical, hardware, instrument-operation-mode and data-processing approaches for detection of trace complex molecules were developed. Different physical processes limiting the sensitivity of trace molecule detection were considered and solutions were developed to reduce the influence of these mechanisms on instrument operation. An absorption sensitivity of α_min=2.5×10^-5 for 4.5 ms measurement time was achieved, which is comparable with the sensitivity of “small” molecule detection. The first results utilizing this technique for in-field monitoring of trace complex molecules are presented. Received: 25 April 2002 / Revised version: 29 May 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +7-095/135-8281, E-mail: anber@nsc.gpi.ru     

Simultaneous online detection of isoprene and isoprene-d2 using infrared photoacoustic spectroscopy

A photoacoustic spectrometer for the simultaneous detection of isoprene and the deuterated species [4,4-²H]-2-methyl-1,3-butadiene (isoprene-d₂) is presented. Using a sealed-off ¹³CO₂ laser a single-component detection limit of 400 ppt (isoprene) and 600 ppt (isoprene-d₂) was achieved. Simultaneous monitoring of both compounds allowed the detection of labelling levels down to 6% (isoprene-d₂ in total isoprene) with a time resolution of 3 min. In emission studies with Eucalyptus globulus, the deuterated precursor [4,4-²H]-1-deoxy-D-xylulose was fed to a leaf through the transpiration stream. Emission of isoprene-d₂ started as early as 10 min after application of the precursor. Received: 3 May 2002 / Revised version: 31 May 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +49-228/733474, E-mail: frank.kuehnemann@iap.uni-bonn.de     

13CO2/12CO2 isotopic ratio measurements using a difference frequency-based sensor operating at 4.35 micrometers

A portable modular gas sensor for measuring the ¹³C/¹²C isotopic ratio in CO₂ with a precision of 0.8‰(±1σ) was developed for volcanic gas emission studies. This sensor employed a difference frequency generation (DFG)-based spectroscopic source operating at 4.35 μm (∼2300 cm^-1) in combination with a dual-chamber gas absorption cell. Direct absorption spectroscopy using this specially designed cell permitted rapid comparisons of isotopic ratios of a gas sample and a reference standard for appropriately selected CO₂ absorption lines. Special attention was given to minimizing undesirable precision degrading effects, in particular temperature and pressure fluctuations. Received: 16 April 2002 / Revised version: 28 May 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-713/5245237, E-mail: fkt@rice.edu     

Differential Helmholtz resonant photoacoustic cell for spectroscopy and gas analysis with room-temperature diode lasers

The results of theoretical and experimental studies and the design of a multi-purpose differential Helmholtz resonant photoacoustic detector (DHRD) and its applications to high-resolution spectroscopy of molecular gases and gas analysis with a room-temperature diode laser in the near-IR region are summarized. The series of experiments and numerical analysis of the DHRD sensitivity were performed for both types (single-pass and multi-pass) of DHRDs within a wide pressure range 0.1–101 kPa, including the regime of a gas flowing through a DHRD cell. The hardware and electronic arrangement of DHRDs for diode laser spectrometers and gas analyzers providing a limiting absorption sensitivity better than 10^-7 Wm^-1 are described. The results of measurements of spectral line parameters of H₂O near 800 and 1390 nm and CH₄ near 1650 nm (intensities, line broadening and shifting by atomic and molecular gases) are presented and discussed. The problems and the ways of perfection of the methodology and accuracy of DHRD techniques with tunable diode lasers of near-IR and visible spectral ranges are discussed. Received: 1 April 2002 / Revised version: 20 June 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +7/382-225-8026, E-mail: kvan@asd.iao.ru     

Large-scale synthesis of crystalline β-SiC nanowires

Large quantities of high-purity crystalline β-SiC nanowires have been synthesized at relatively low temperature via a new simple method, the chemical-vapor-reaction approach, in a home-made graphite reaction cell. A mixture of milled Si and SiC powders and C₃H₆ were employed as the starting materials. The results show that the nanowires with diameters of about 10–35 nm are single crystalline β-SiCwithout any wrapping of amorphous material, and the nanowire axes lie along the 〈111〉 direction. Some unique properties are found in the Raman scattering from the β-SiC nanowires, which are different from previous observations of β-SiC materials. A possible growth mechanism for the β-SiC nanowires is proposed. Received: 27 August 2002 / Accepted: 28 August 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-29/8491-000, E-mail: zjli-sohu@sohu.com     

Detection of N2O by photoacoustic spectroscopy with a compact, pulsed optical parametric oscillator

A pulsed optical parametric oscillator (OPO) operated in an optical cavity with a grazing-incidence grating configuration (GIOPO) was used for sensitive photoacoustic detection of trace quantities of dinitrogen oxide (N₂O). The (ν₁+ν₃) combination vibration band of N₂O was excited with the idler beam of the GIOPO at 2.86 μm using an optical cavity optimized for the idler beam. The linewidth of the GIOPO could be reduced to 0.4 cm^-1, allowing the rotational structure of the absorption spectrum to be resolved. A concentration sensitivity (signal-to-noise ratio=3) of 60 parts in 10⁹ by volume (60 ppb V) N₂O in synthetic air was obtained. This may be sufficient for continuous monitoring of N₂O in the atmosphere. Received: 29 April 2002 / Revised version: 4 June 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +49-6221/54-4255, E-mail: peter.hess@urz.uni-heidelberg.de     

A fast-response near-infrared tunable diode laser absorption spectrometer for in situ measurements of CH4 in the upper troposphere and lower stratosphere

We describe a near-infrared in situ tunable diode laser spectrometer developed for atmospheric measurements of CH₄ in the upper troposphere and lower stratosphere (UT/LS). The instrument is designed to provide fast-response (0.5–1 Hz) measurements and operate autonomously on the NASA WB-57F high-altitude aircraft. A single-mode InGaAsP distributed feedback laser diode operating at 1.6537 μm scans continuously over the R(3) rotation–vibration transition in the 2ν₃ band. We use a direct absorption technique incorporating a custom-designed long path length (252 m) low-volume (3.6 L) astigmatic Herriott cell. The present detection sensitivity is 5×10¹⁰ molecules cm^-3, corresponding to ∼20 ppbv in the UT/LS, with the main limit to instrument precision being background optical interference fringes. In-flight performance is demonstrated by presentation of recent data. Received: 25 January 2002 / Revised version: 5 April 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-303/497-5373, E-mail: richard@al.noaa.gov     

Rapidly swept, continuous-wave cavity ringdown spectroscopy with optical heterodyne detection: single- and multi-wavelength sensing of gases

Spectroscopic sensing of gases can be performed with high sensitivity and photometric precision by cavity ringdown (CRD) absorption spectroscopy. Our cavity ringdown spectrometer incorporates continuous-wave (cw) tunable diode lasers, fibre-optic coupling and standard photonics and optical telecommunications components. It comprises a rapidly swept optical cavity in a single-ended optical heterodyne transmitter–receiver configuration, enabling optical absorption of gases to be recorded either as single-frequency scanned spectra or as simultaneous, multi-wavelength tailored spectra. By measuring weak near-infrared rovibrational spectra of carbon dioxide gas (CO₂), with high resolution in the vicinity of 1.53 μm, we have realised a noise-limited absorption sensitivity of 2.5×10^-9 cm^-1 Hz^-1/2. Analytical sensitivity limits (both actual and projected) and prospective gas-diagnostic applications are discussed. Our approach to cw-CRD spectroscopy offers high performance in a relatively simple, low-cost, compact instrument that is amenable to chemical analysis of trace gases in medical, agricultural, industrial and environmental situations. Received: 16 May 2002 / Revised version: 3 June 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +61-2/9850-8313, E-mail: brian.orr@mq.edu.au     

Characterization of defect type and dislocation density in double oxide heteroepitaxial CeO2/YSZ/Si(001) films

In order to qualitatively and quantitatively analyze the structural defects including the defect types and their concentrations in oxide heteroepitaxial films, a new X-ray rocking-curve width-fitting method was used in the case of doubleCeO₂/YSZ/Si (YSZ=yttria-stabilized ZrO₂) films that were prepared by pulsed laser deposition. Two main defect types, angular rotation and oriented curvature, were found in both CeO₂ and YSZ. Dislocation densities of CeO₂ and YSZ, which were obtained from the angular rotations, are functions of the YSZ thickness. A distinct two-step correlation between dislocation densities of CeO₂ and YSZ was found that as the dislocation density of YSZ is higher than 2.4×10¹¹ cm^-2, the dislocation density of CeO₂ shows a high sensitivity with that of YSZ compared with the low relativity in lower dislocation density (<2.4×10¹¹ cm^-2). In addition, YSZ always has higher dislocation densities and oriented curvatures than CeO₂ in each specimen, which can be attributed to the smaller mosaic domain sizes in YSZ than in CeO₂ as observed by high-resolution transmission electron microscopy. Received: 12 August 2002 / Accepted: 14 August 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +81-3/5734-3369, E-mail: chun_hua_chen@hotmail.com     

High refractive index and transparent heavy metal oxide glassy thin films

Heavy metal oxide thin films of the ternary system Nb₂O₅–GeO₂–PbO have been prepared by pulsed laser deposition in an O₂ environment from either glassy or crystalline bulk samples. The range of ([Pb]+[Nb]) content in which the films are optically homogeneous and transparent is much broader (0.5–1.0) than that of the bulk samples considered in the present work (0.55–0.62). The imaginary part of the refractive index is very low in all cases (k<10^-3), whereas the real part increases linearly with the ([Pb]+[Nb]) content up to values as high as 2.35. The optical energy gap has been found to be strongly dependent on [Pb], whereas it is almost independent of [Nb]. This dependence is discussed in terms of the role of Pb and Nb as network modifiers or formers. Received: 5 August 2002 / Accepted: 8 August 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +34-91/564-5557, E-mail: j.gonzalo@io.cfmac.csic.es     

On the accurate determination of pressure- induced line shifts in the 2ν<Subscript>3</Subscript> band of H<Subscript>2</Subscript>O at 1320 nm

A simple technique is demonstrated for the accurate determination of pressure-induced line shifts of water in air. High- and low-pressure water samples are simultaneously probed on selected overtone transitions at 1.32 μm using a current-modulated distributed-feedback diode laser and harmonic detection. The resultant profiles yield an average line shift of -293±30 MHz/atm for the 3,3,0 (002)2,2,1 (000)transition at 227251 GHz and -134±7 MHz/atm for the 3,2,1 (002)2,1,2 (000) transition at 227027 GHz. Comparisons are made between first- and second-harmonic detection, and wavelength- and frequency-modulation regimes. The effect of modulation broadening on the returned line shifts is quantified. Received: 12 August 2002 / Revised version: 21 October 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +44-01865/275410, E-mail: gus.hancock@chemistry.ox.ac.uk     

Wavelength-agile fiber laser using group-velocity dispersion of pulsed super-continua and application to broadband absorption spectroscopy

A swept-wavelength source is created by connecting four elements in series: a femtosecond fiber laser at 1.56 μm, a non-linear fiber, a dispersive fiber and a tunable spectral bandpass filter. The 1.56-μm pulses are converted to super-continuum (1.1–2.2 μm) pulses by the non-linear fiber, and these broadband pulses are stretched and arranged into wavelength scans by the dispersive fiber. The tunable bandpass filter is used to select a portion of the super-continuum as a scan-wavelength output. A variety of scan characteristics are possible using this approach. As an example, an output with an effective linewidth of approximately 1 cm^-1 is scanned from 1350–1550 nm every 20 ns. Compared to previous scanning benchmarks of approximately 1 nm/μs, such broad, rapid scans offer new capabilities: a gas sensing application is demonstrated by monitoring absorption bands of H₂O, CO₂, C₂H₂ and C₂H₆O at a pressure of 10 bar. Received: 5 August 2002 / Revised version: 23 September 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +1-608/265-2316, E-mail: ssanders@engr.wisc.edu     

Processing of vacuum microelectronic devices by focused ion and electron beams

Localized physical and chemical reactions induced by focused ion and electron beams, i.e. dual beams, have been used to fabricate field emitters (FEs) and their arrays, field-emitter arrays (FEAs), without masking and annealing processes. Issues arising from beam processing such as beam-induced damage and contamination were eliminated to provide FEAs with low leakage current. Quick prototyping and repairing processes of FEs and FEAs using dual-beam processing have been demonstrated. Nb- or Au-gated Pt FEAs have been fabricated using dual beams. The fabricated FEAs showed a turn-on voltage of 40 V for field emission with a typical emission current of about 1 μA/tip. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +81-6/6850-6662, E-mail: takai@rcem.osaka-u.ac.jp     

Pulsed laser deposition and in situ diagnostics of the process applied to shape-memory alloys

NiTi films deposited by pulsed laser ablation on Si/SiO₂ are shown to exhibit structural and functional properties related to the shape-memory effect. Film characterization suggests that relevant temperatures for the solid-to-solid transformation responsible for the shape memory are in substantial agreement with those of the bulk target material, demonstrating a good congruency of the deposition process. Besides the technological interest for this class of thin films, our findings point out the suitability of laser ablation for metal alloy deposition. An investigation based on in situ ion-mass spectroscopy and covariance mapping analysis allows us to determine the main vapor-phase processes leading to the formation of stoichiometric clusters expected to play a relevant role in assisting the growth of NiTi thin films. Received: 6 August 2001 / Accepted: 11 April 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +39-50/2214-333, E-mail: fuso@df.unipi.it