Yb：YAG晶体中的色心

在用引上法生长的Ｙｂ：ＹＡＧ晶体中，存在一个独特的色心，其吸收带位于３７５ｎｍ的６２５ｎｍ，随着Ｙｂ２Ｏ３掺杂浓度的增加，色心浓度增加，探讨了晶体生长过程中色心形成机理。高强γ射线辐照Ｙｂ：ＹＡＧ晶体，诱导大量色心的形成。晶体中的 对激发态Ｙｂ＾３＋离子的荧光寿命具有流淬火效应，因此，Ｙｂ：ＹＡＧ激光晶体需要经高温退火，消除色心的影响。     

Yb：YAG晶体的光谱和激光性能

研究了Ｙｂ：ＹＡＧ晶体的光谱特性,通过不同掺杂深度的Ｙｂ：ＹＡＧ晶体的荧光寿命的测定,确定了Ｙｂ＾３＋在Ｙｂ：ＹＡＧ晶体的最佳掺杂浓度,用合作上转换机制解释了高浓度掺杂时的荧光浓度猝灭效应,研究了掺杂原子分数为０．２的晶体微片的激光性能。     

Cr^4＋：YAG,Cr^4＋：Mg2SiO4近红外荧光辐射温度特性研究

测量了Ｃｒ＾４＋，ＹＡＧ、Ｃｒ＾４＋，Ｍｇ２ＳｉＯ４晶体在室温和液氮温度下的荧光光谱，吸收光谱和激发态寿命，讨论了温度变化时，两种晶体中Ｃｒ＾４＋近红外辐射积分强度变化与激光发态寿命变化的关系，得出结论：在７７Ｋ￣３００Ｋ范围内，Ｃｒ＾４＋的＾３Ｔ２能级荧光辐射截面本身受温度影响不大，Ｃｒ＾４＋辐射荧光的变化，主要是由无辐射弛豫速率随温度变化而引起的。     

Eu3+:Y2SiO5晶体透射光谱和荧光谱研究

在室温条件下,对Ｅｕ＾３＋：Ｙ２ＳｉＯ５晶体的透射光谱和４５７．９ｎｍＡｒ＾＋激光激发荧光谱进行测量和研究。这些光谱表明,Ｅｕ＾３＋离子在Ｙ２ＳｉＯ５晶体中占据两种最低对称性Ｃ１格位。利用透射光谱和荧光谱对Ｅｕ＾３＋离子的最低激发态＾５Ｄ０的两种格位光谱进行了成功分离。实验发现,在＾５Ｄ０态两种格位谱的谱宽只有０．１ｎｍ左右,其峰间隔约为０．１８ｎｍ。另外,文中还测量了Ｅｕ＾３＋离子的基态＾７ＦＪ     

Yb:YAG晶体的光谱性能

系统地研究了不同掺杂浓度的Ｙｂ：ＹＡＧ晶体的光谱特性,通过吸收光谱的测量计算了晶体的吸收截面,用对易法计算了晶体的发射截面。在Ｙｂ：ＹＡＧ晶体毛坯中发现Ｙｂ＾２＋和色心,其浓度随Ｙｂ：ＹＡＧ晶体中Ｙｂ＾３＋的增加而增加。经１４００℃氧气氛退火后消失。首次用光子激发和Ｘ射线激发研究了Ｙｂ：ＹＡＧ晶体的荧光特性。     

氟磷酸锶晶体Cr4+:YAG被动调Q激光特性研究

采用氙灯泵浦,实现了掺钕氟磷酸锶晶体以Ｃｒ＾４＋：ＹＡＧ作为被动调Ｑ元件的１．０５９μｍ激光运转,测量了Ｃｒ＾４＋：ＹＡＧ 同小爱过率及不同泵浦能量上激光单脉冲的输出能量、脉冲宽度、重复率,给出了Ｎｄ：Ｓ－ＦＡＰ晶体Ｃｒ＾４＋：ＹＡＧ调Ｑ工作原理的方程组,数值求解该方程组得的理论结果与实验值相符。     

YAG晶体中Ce^3＋对Er^3＋的敏化作用

通过求解（Ｃｅ，Ｅｒ）：ＹＡＧ和Ｅｒ：ＹＡＧ的能级跃迁速率方程，讨论了Ｃｅ＾３＋对Ｅｒ＾３＋离子的敏化作用。表明掺Ｃｅ＾３＋可增强Ｅｒ＾３＋离子１．６６μｍ波长的激光强度，但仅改变了１．６６μｍ波长激光粒子数反转，即Ｎ２（＾４Ｉ１２／２）〉Ｎ１（＾４Ｉ１５／２）与Ｅｒ＾３＋离子浓度的关系。     

Yb：YAG晶体的制备与光谱特性

用引上法生长Ｙｂ：ＹＡＧ晶体，确定了合适的退火工艺，研究了Ｙｂ：ＹＡＧ晶体中Ｙｂ＾３＋的光谱性能双及晶体缺陷对Ｙｂ＾２＋光谱性能的影响。     

Yb:YCOB晶体制备及其光谱与激光二极管抽运激光特性

研究了Ｙｂ：ＹＣＡ４Ｏ（ＢＯ３）（简称Ｙｂ：ＹＣＯＢ）的多晶制备和单晶生长,成功地合成了光学质量优良、掺Ｙｂ原子数分数为２０％的Ｙｂ：ＹＣＯＢ单晶。测量了该晶体的吸收光谱、荧光光谱和荧光寿命。并进行了激光二极管（ＬＤ）为抽运源的激光实验。实现了Ｙｂ：ＹＣＯＢ晶体１０ｍＷ的红外激光输出。观测并记录到自倍频二次谐波。     

YAG晶体中Cr~（3＋）→Tm~（3＋），Er~（3＋）→Tm~（3＋）的能量

研究了加入敏化离子Ｃｒ３＋和Ｅｒ３＋的Ｔｍ：ＹＡＧ晶体的吸收谱和荧光谱，计算了Ｃｒ３＋、Ｅｒ３＋、Ｔｍ３＋离子的２Ｅ、４Ｉ１３／２、３Ｆ４能态的平均寿命及能量；转移效率、转移速率．得出Ｃｒ３＋→Ｔｍ３＋转移效率为８０％，转移速率为２．１×１０３ｓ－１．由（Ｅｒ，Ｔｍ）：ＹＡＧ的荧光谱可见存在Ｅｒ３＋→Ｔｍ３＋的有效的能量转移．讨论了Ｃｒ３＋→Ｔｍ３＋和Ｅｒ３＋→Ｔｍ３＋能量转移的不同．     

Investigation of Absorption Spectra of (Cr4+,Yb3+):YAG Crystal

The absorption spectra characters of the (Cr,Yb):YAG,Cr:YAG and Yb:YAG crystals are reported. In the absorption spectra of the (Cr,Yb): YAG crystal,there are two absorption bands at 937 nm and 968 nm respectively,which are suitable for InGaAs diode laser pumping;and there is an absorption band of Cr4+ near 1030 nm,which is suitable for passive Q switch laser output at 1.03 μm. This Cr-Yb-codoped crystal may be a potential material for compact,diode laser pumped passive Q-switched solid-state laser with efficient,high-stable.     

Investigation of Absorption Spectra of(Cr~(4 ),Yb~(3 )):YAG Crystal

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铬、钕双掺钆镓石榴石(Cr~(4+),Nd~(3+))∶Gd_3Ga_5O_(12)激光晶体光学性能的研究

用提拉法生长了掺铬、钕的钆镓石榴石(Cr4+,Nd3+∶GGG)自调Q激光晶体。报道了室温下的吸收光谱和荧光光谱特性。分析了Cr离子浓度对光谱性质的影响。比较了Cr4+∶GGG,Nd3+∶GGG和(Cr4+,Nd3+)∶GGG晶体吸收光谱的关系。测量了(Cr4+,Nd3+)∶GGG晶体和Nd3+∶GGG晶体的荧光寿命,它们分别是33μs和250μs。实验表明,(Cr4+,Nd3+)∶GGG晶体是一种非常有潜力的自调Q激光晶体,可以实现大功率激光器的小型化和全固态化。     

Study of the effects of Cr ions on Yb in Cr,Yb:YAG crystal

The absorption and fluorescence spectra of Cr,Yb:YAG crystal were measured. There are two absorption bands at 940 nm and 968 nm although the absorption coefficient is lower than that of the absorption peak of Yb:YAG superimposed in Cr:YAG absorption peak. The emission peak intensity is 4 times lower than that of Yb:YAG, which may be caused by the existence of the ground state absorption of Cr⁴⁺ which quenches the Yb³⁺ emission intensity. Although the emission peak of Cr,Yb:YAG is lower than that of Yb:YAG, there is an advantage of this crystal which combines the saturable absorber and gain medium into one and can be a self-Q switching laser crystal if Cr,Yb:YAG crystal is pumped with high energy power.     

Growth and optical properties of a new self-Q-switched laser crystal: Cr:Yb3Al5O12

Cr⁴⁺:YbAG (Cr⁴⁺:Yb₃Al₅O₁₂) crystal with a size up to Φ24 mm×30 mm was grown by the Czochralski method. In the absorption spectrum, there are two absorption bands at 939 and 969 nm, respectively, which are suitable for InGaAs diode laser pumping, and there is an absorption band at 1030 nm, which is suitable for passive Q-switched laser output at 1.03 μm. A broad emission spectrum from 970 to 1100 nm was exhibited from 940 nm wavelength pumping. This crystal is promising as a self-Q-switched laser crystal used for compact, efficient, highly stable, passive self-Q-switched thin chip solid-state lasers.     

A passively Q-switched diode pumped Yb:YAG microchip laser

A passively Q-switched diode pumped Yb:YAG microchip laser with Cr4+:YAG saturable absorber mirror is reported. The TEMoo laser pulses are obtained with 1,7-uJ pulse energy, 15-ns pulse width, 0.11-kW peak power, and a repetition rate of 2.2 kHz at 1049 nm. The doped concentration and dimension of Yb:YAG microchip crystal are 10 at.-% and 5×0.6 mm2, respectively.     

Cr^4＋：YAG的可饱和吸收特性与被动Q开关性能研究

运用速率方程计算了Ｃｒ＾４＋：ＹＡＧ晶体的可饱和吸收特性参数，包括初始吸收系数，饱和吸收系数，饱和光强和损耗调制度，用Ｃｒ＾４＋：ＹＡＧ对脉冲和连续Ｎｄ：ＹＡＧ激光器进行了被动调Ｑ，在脉冲Ｎｄ：ＹＡＧ激光器上得到了８ｎｓ的调Ｑ激光脉冲，在连续Ｎｄ：ＹＡＧ激光器的调Ｑ中得到了间隔和幅度抖动小于５％的输出脉冲充列。     

LD side-pumped passively Q-switched Yb:YAG slab laser

A quasi-continuous wave laser diode side-pumped passively Q-switched Yb:YAG slab laser with Cr⁴⁺:YAG saturable absorber has been demonstrated in order to understand the pulse properties of Yb:YAG crystal. To our knowledge the maximum 69% extraction efficiency is achieved by the system. 44 μJ pulse energy and 1.64 KW peak power with near diffraction-limited beam quality are presented at 25 Hz repetition rate. The build-up time of the Q-giant in the passively Q-switched laser is shown.