共查询到19条相似文献,搜索用时 140 毫秒
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用椭偏法测量了入射光波长0.632μm、入射角50°至85°时某合金钢的光学常数。考虑材料表面的粗糙度,用Ohlidal-Lukes理论对所测光学常数值进行修正,发现椭偏参量的修正量随入射角增大而增大。结果表明,用椭偏法测量合金钢光学常数时采用较小入射角能获得更精确的样片光学常数。 相似文献
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采用椭偏法测量入射光波长为0.632μm,入射角为50°~85°时合金钢的光学常数。考虑材料表面的粗糙度,用Ohlidal-Lukes理论对所测光学常数值进行了修正,发现椭偏参量的修正量随入射角增大而增大。结果表明,测量入射角在50°~70°范围内测量值与修正后计算结果基本一致,在70°~85°范围内测量值与修正后的计算结果差距较大。因此,用椭偏法测量合金钢光学常数时使入射角小于70°,测量结果会更加准确。 相似文献
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基于对椭偏测量数据中难以消除的系统误差的作用机理分析,提出了一种新型的薄膜光学参数表征误差处理技术。建议选取薄膜椭偏角关于折射率和几何厚度的一阶偏导数,对大部分测量入射角满足符号相反或只有其中一个为零的条件的波段,剔除偏导数对全部测量入射角满足符号相同或同时为零的条件的奇点波长附近波段,作为反演表征用的椭偏测量数据采集区域,以最小化椭偏测量系统误差引起的薄膜光学参数反演表征值相对真实值的偏差大小。其本质是通过一阶偏导数筛选测量数据,来最小化椭偏测量系统误差对薄膜光学参数表征的误差传递作用。通过数值模拟实验,对比研究了该技术对不同测量入射角范围的适用性及实施技巧,以可复现的数值实验数据和合理的理论解释支持和验证了这种误差处理技术的可靠性,为薄膜在线表征和镀膜监控提供了一定的参考价值。 相似文献
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介绍了一种同时利用椭偏仪和分光光度计精确测量薄膜光学常数的方法, 并详细比较了该方法与使用单一椭偏仪拟合结果的可靠性.采用可变入射角光谱型椭偏仪(VASE)表征了250—1700 nm波段辉光放电法沉积的类金刚石薄膜,研究发现当仅用椭偏参数拟合时,由于厚度与折射率、消光系数的强烈相关性,无法得到吸收薄膜光学常数的准确解.如果加入分光光度计测得的透射率同时拟合,得到的结果具有很好的惟一性.该方法无需设定色散模型即可快速拟合出理想的结果,特别适合于确定透明衬底上较薄吸收膜的光学常数.
关键词:
光学常数
光谱型椭偏仪
吸收薄膜
透射率 相似文献
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针对多角度椭偏测量透明基片上薄膜厚度和光学参数时基片背面非相干反射光的影响问题,报道了利用椭偏透射谱测量等离子增强化学气相沉积法(PECVD)制备的a-Si:H薄膜厚度和光学参数的方法,分析了基片温度Ts和辉光放电前气体温度Tg的影响.研究表明,用椭偏透射法测量的a-Si:H薄膜厚度值与扫描电镜(SEM)测得的值相当,推导得到的光学参数与其他研究者得到的结果一致.该方法可用于生长在透明基片上的其他非晶或多晶薄膜.
关键词:
椭偏测量
透射法
光学参数
氢化非晶硅薄膜 相似文献
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Using e-beam evaporation, the ellipsometric parameters of thick transparent films are studied with the modified analysis method for the SiO 2 film samples deposited onto the Si substrate. The ellipsometric parameters are measured at the incidence angles changing from 50 to 70 and in the 3–4.5 eV photon energy range. The error in the conventional method can be significantly reduced by the modified ellipsometric method considering the spatial effect to show good agreement between the theoretical and experimental results. The new method presented in this letter can be applied to other optical measurement of the periodic or non-periodic film structures. 相似文献
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薄膜材料的生长过程随镀膜机尺寸的增大而呈现新的规律,为制备膜层均匀性好、材料均质的大尺寸光学元件,分别在不同离子源能量、沉积压强、基板加热温度及基板转速条件下,采用离子辅助电子束蒸发方法制备了不同单层SiO2薄膜样品;利用分光光度计及椭偏仪分别对样品的透过率及椭偏参数进行测量,并对测量结果进行拟合得到不同样品的折射率及非均质特性。实验结果表明,工件架转速是使大尺寸SiO2薄膜材料产生非均质特性的主要影响因素,离子源能量、基板温度、沉积压强通过影响材料生长过程对材料的非均质特性产生调控;对于大尺寸薄膜光学元件,工件架转速存在限制的条件下,优化其他工艺参数可以获得均质SiO2薄膜材料,该结果对于制备具有优良性能的大尺寸薄膜光学元件具有借鉴意义。 相似文献
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以正硅酸乙酯和丙醇锆为前驱体,用溶胶-凝胶法在K9基片上提拉镀制SiO2/ZrO2双层膜。采用不同实验步骤制备了2个样品,样品1镀完SiO2后直接镀ZrO2 ,样品2镀完SiO2经热处理后再镀ZrO2。采用原子力显微镜、椭偏仪、紫外-可见分光光度计对薄膜进行表征。针对SiO2/ZrO2双层膜,考虑到膜间渗透的影响,采用3层Cauchy模型进行椭偏模拟,椭偏参数的模拟值曲线与椭偏仪的测量值曲线十分吻合,进而发现热处理可以使SiO2/ZrO2双层膜之间的渗透减少近23 nm,从而提高其峰值透射率。利用输出波长1.064 mm,脉宽8.1 ns的激光束对样品进行了损伤阈值的测试,用光学显微镜观察损伤形貌,结果发现两者损伤阈值分别为13.6 J/c2和14.18 J/cm2,均为膜的本征损伤。 相似文献
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The possibility of testing a surface damaged layer and the cleaning quality of precision optical surfaces using the monochromatic
ellipsometry method is discussed. The results of ellipsometric measurements of the thickness homogeneity of nanofilms deposited
by the ion-beam sputtering method are analyzed. The results of calculations of the film thicknesses and parameters of surface
layers performed by solving an inverse ellipsometric problem are presented. The results of measurements of the thickness of
thin films by the profilometric and ellipsometric methods are compared. 相似文献
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J. Kučírek 《Czechoslovak Journal of Physics》1969,19(4):537-545
On the basis of an analysis of the properties of space constructed in coordinates of the ellipsometric angles and and the thicknessd
1 of a thin slightly absorbing film, a graphical method of determining its index of refraction, index of absorption and thickness is proposed and discussed. From the two ellipsometric measurements, either for two different angles of incidence or for two different surrounding media, it is in principle possible to determine the chosen parameters characterizing the thin slightly absorbing film. The graphical method, however, seems to be less accurate and very laborious. The calculation is therefore proposed for an automatic computer. The ellipsometric measurements were carried out on a SAAB computer, according to a program elaborated in Algol. The results obtained and the values computed for the optical constants and the thickness of the thin slightly absorbing film are in good agreement with those found independently. 相似文献
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A new common-path heterodyne-modulated ellipsometer with two-phase detection to measure the ellipsometric parameters of amplitude ratio (Ψ) and phase difference (Δ) between p- and s-polarizations of the thin film isotropic materials is proposed. Uniquely, the new scheme distinct from the other previous studies is only by taking two phases from heterodyne signals. Thus, the proposed system is a phase-sensitive modulated ellipsometer that can have the ability to measure the full range of the ellipsometric parameters with high sensitivity and eliminate the intensity fluctuation in system. The ability and performance of modulated ellipsometer on measurement of thin film thickness and ellipsometric parameters are verified by experiments. The errors regarding the ellipsometric parameter measurements are also discussed. The experimental results show that the average standard variation of measured ellipsometric parameters (Ψ and Δ) and the thickness measurement of silica thin film deposited on silicon substrate are 0.13°, 0.94°, and 0.55 nm, respectively. Accordingly, this new idea can be applied to measure isotropic thin film with extremely high absorbance that results in the poor signal/noise ratio in contrast extraction from heterodyne signals. 相似文献