Effect of oxygen content and deposition temperature on the characteristics of thin silver films deposited by magnetron sputtering

Thin silver films were prepared by direct current magnetron sputtering in a single-ended in-line sputter system at various substrate temperatures and in O₂ contents in sputter gas, and their electrical, optical, structural and morphological properties together with the compositional properties were investigated. When deposited at room temperature, the electrical and optical properties of Ag films deteriorated with addition of O₂ to sputter gas. Deposition of Ag films in O₂ added sputter gas promoted the formation of Ag crystallites with (2 0 0) plane parallel to the substrate surface. The electrical resistivity and optical reflection of Ag films deposited above 100 °C were not affected by the sputtering plasma containing oxygen. X-ray photoelectron spectroscopic analysis showed that Ag films deposited above 100 °C in O₂ added sputter gas did not possess surplus oxygen in the film, and that the oxidation states of these films were almost identical to that of Ag films deposited in pure Ar gas.     

Electrical behaviour of catalytic nanostructured CeO2/CuOx composites under air-methane gas impulses

Nanostructured composites based on copper oxide and cerium dioxide phases [CuO-CeO₂] were elaborated from sol-gel route, with weight fractions of CuO phase ranging between 0 and 0.4. They are interesting potential catalysts allowing conversion of CH₄ and CO into CO₂ and H₂O and might be used in miniaturized gas sensors. An electrical study of this nanostructured system was carried out to determine catalytic behaviours under air-methane impulses at 350 °C. The electrical analysis was based on a specific homemade electronic device. Time dependent interactions between gas pulses and solid catalyst (CuO/CeO₂) were analyzed from a frequency modification of the electronic device. Kinetic parameters were determined from a model describing adsorption and desorption of gases adapted to short interaction time between gas and solid. These time dependent electrical behaviours were then correlated with infrared spectroscopy analyses allowing time dependent analysis of methane conversion into CO₂ gas, for long interaction time between gas and solid.     

Hydrogen gas-sensing properties of Pt/WO<Subscript>3</Subscript> thin film in various measurement conditions

A well-known gasochromic material is Pt particle-dispersed tungsten trioxide (Pt/WO₃). Its optical properties could make it effective as a hydrogen gas sensor. In this study, Pt nanoparticle-dispersed WO₃ thin films were prepared using the sol–gel process, and their optical and electrical properties dependent on the working environment (i.e., temperature, hydrogen gas concentration, oxygen partial pressure, etc.) were investigated. The Pt/WO₃ thin films prepared at 400 °C showed the largest change in optical transmittance and electrical conductivity when exposed to hydrogen gas compared with the films prepared at other temperatures. The optical absorbance and electrical conductivity were found to be dependent on the hydrogen and oxygen gas concentration in the atmosphere because generation and disappearance of W⁵⁺ in the thin films depend on the equilibrium reaction between injection and rejection of H⁺ into and from the thin films. In addition, the equilibrium reaction depends on the hydrogen and oxygen gas concentrations.     

AlNxOy thin films deposited by DC reactive magnetron sputtering

AlN_xO_y thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resistivity of the coatings are strongly correlated with discharge parameters. Varying the reactive gas mixture partial pressure, the film properties change gradually from metallic-like films, for low reactive gas partial pressures, to stoichiometric amorphous Al₂O₃ insulator films, at high pressures. For intermediate reactive gas pressures, sub-stoichiometric AlN_xO_y films were obtained, with the electrical resistivity of the films increasing with the non-metallic/metallic ratio.     

Electrical properties of A′Ca2Nb3O10 (A′=K, Rb, Cs) layered perovskite ceramics

The electrical conductivity properties of Dion-Jacobson type layered perovskites A′Ca₂Nb₃O₁₀ (A′=K, Rb, Cs) was investigated under different gas atmospheres. An increase in the electrical conductivity by about 2–5 orders in magnitude in both ammonia and hydrogen atmospheres is observed compared to air. Among the members of the series, the compound with the smallest size of the alkali ion, i.e. KCa₂Nb₃O₁₀, exhibits the highest conductivity. In air and hydrogen, a single activation energy value in the range 0.25 – 0.80 eV is observed, while in ammonia a sharp increase in the electrical conductivity is found at about 500 °C. The activation energy at low-temperatures (300–500 °C) is attributed to ionic motion and at higher temperatures (500–700 °C) to both defect formation and ionic motion. The unusual electrical conductivity behavior in ammonia is explained on the basis of the model developed for alkali halides. EMF measurements reveal that the layered perovskites are ionic (proton) conductors. The electrical conductivity changes as a function of the ammonia gas concentration; accordingly, layered perovskites appear to be useful solid electrolytes in galvanic cells for practical applications, e.g. for gas sensors. Paper presented at the 7th Euroconference on Ionics, Calcatoggio, Corsica, France, Oct. 1–7, 2000.     

Particle Dynamics in an Electrohydrodynamic Flow Field investigated with a two-component laser-doppler velocimeter

A laser-Doppler instrument has been used to measure the migration velocity of NaCl particles in an electrohydrodynamic flow field of an electrical precipitator. The measured average migration velocity of 1.40-μm particles (number distribution median with a geometric standard devitation of 1.46) is approximately five to six times higher than the calculated steady-state velocity for a 1.40-μm particle, provided there is a saturation charge of at least 90f%. Further, the particle velocities in the main flow direction are also influenced by the electrical operation conditions. Both observations demonstrate the important role of the state of the electrohydrodynamic flow field (superposition of moving gas ions and neutral gas molecules) on the particle transport, characterized by the dimensionless electrohydrodynamic number N_EHD. A comparison between six different electrohydrodynamic states revealed that N_EHD ≈? 1 is a critical value for the mutual interactions between the gas ions and the neutral gas phase. Whereas for N_EHD values > 1 the stochastic particle motion is chiefly determined by the nonsteady-state character of the negative corona, for N_EHD values < 1 the particle velocity fluctuations are governed by the turbulence level of the neutral fluid. These finding might be helpful in adjusting the operating conditions in electrical precipitators for and optimized particle separation.     

Measurement of optical and electrical properties of silicon microstructuring induced by ArF excimer laser at SF6 atmosphere

The irradiation of ArF excimer laser (193 nm) on Si wafer (〈1 1 1〉, n-type, arsenic-doped, 0.01 Ω cm) in SF₆ atmosphere, from vacuum to 1000 mbar, creates a regular self-assembled microstructure owning to a great number of microconical spikes covered with SiF₂ (fluorosilyl) layer containing sulfur impurities. The geometry of microstructure as well as the layer thickness varies with the gas pressure and the laser parameters, particularly duration, pulse energy and the dose. In this work, the electrical properties of the layer on the microstructured silicon have been investigated based on electrical impedance spectroscopy (EIS). The measured impedance significantly changes regarding to the unirradiated samples. It was shown that the corresponding electrical conductance and the dielectric constants of the layer are strongly dependent on the gas pressure and UV dose. The layer thickness was also determined in terms of SF₆ pressures.     

Comparison and semiconductor properties of nitrogen doped carbon thin films grown by different techniques

Amorphous carbon nitride (a-CN_x) thin films have been synthesised by three different deposition techniques in an Ar/N₂ gas mixture and have been deposited by varying the percentage of nitrogen gas in the mixture (i.e. the N₂/Ar + N₂ ratio) from 0 to 10%. The variation of the electrical conductivity and the gap values of the deposited films versus the N₂/Ar + N₂ ratio were investigated in relation with their local microstructure. Film composition was analysed using Raman spectroscopy and optical transmission experiments. The observed variation of electrical conductivity and optical properties are attributed to the changes in the atomic bonding structures, which were induced by N incorporation, increasing both the sp² carbon content and their relative disorder. The low N content samples seem to be an interesting material to produce films with interesting properties for optoelectronic applications considering the facility to control the gas composition as a key parameter.     

Electrical characteristics of the hydrogen pre-annealed Au/n-GaAs Schottky barrier diodes as a function of temperature

We investigated the passivation effects of hydrogen gas on the Au/n-GaAs Schottky barrier diodes in a wide temperature range. Reference diodes were prepared by evaporating barrier metal on semiconductor wafers un-annealed in N₂ gas atmosphere. The other diodes were made by evaporating barrier metal on n-GaAs semiconductor substrates annealed in H₂ atmosphere. Then, electrical measurements of all diodes were carried out by using closed-cycle Helium cryostat by steps of 20 K in the temperature range of 80-300 K in dark. The basic diode parameters such as ideality factor and barrier height were consequently extracted from electrical measurements. It was seen that ideality factors increased and barrier heights decreased with the decreasing temperature. The case was attributed to barrier inhomogeneity at the metal/semiconductor interface. Barrier heights of the diodes made from samples annealed in H₂ gas atmosphere were smaller than those of reference diodes at low temperatures. Here, it was ascribed to the fact that hydrogen atoms passivated dangling bonds on semiconductor surface in accordance with former studies.     

Preparation and characterization of CrNxOy thin films: The effect of composition and structural features on the electrical behavior

Metallic oxynitrides have attracted the attention of several researchers in the last decade due to their versatile properties. Through the addition of a small amount of oxygen into a transition metal nitride film, the material's bonding states between ionic and covalent types can be tailored, thus opening a wide range of electrical, optical, mechanical and tribological responses. Among the oxynitrides, chromium oxynitride (CrN_xO_y) has many interesting applications in different technological fields. In the present work the electrical behavior of CrN_xO_y thin films, deposited by DC reactive magnetron sputtering, were investigated and correlated with their compositional and structural properties. The reactive gas flow, gas pressure, and target potential were monitored during the deposition in order to control the chemical composition, which depend strongly on reactive sputtering process. Depending on the particular deposition parameters that were selected, it was possible to identify three types of films with different growth conditions and physical properties. The electrical resistivity of the films, measured at room temperature, was found to depend strongly on the chemical composition of the samples.     

Mustard gas adsorption on the pristine and BN-doped graphynes: A computational study

The electronic sensitivity and reactivity of pristine, and BN doped graphyne (BNG) are scrutinized toward mustard gas using DFT calculations. The mustard gas weakly adsorbs via its Cl atom on the graphyne with adsorption energy about -3.1 kcal/mol and has no effect on its electrical conductivity. Replacing –C≡C– linkages with isoelectronic –BN– linkages increases the HOMO-LUMO gap (E_g) and decreases the work function and reactivity of graphyne. By mustard adsorption, the E_g of BNG decreases from 2.24 to 1.12 eV, increasing the electrical conductivity. Also, the BNG work function is considerably affected, changing the field emission electron current. Finally, a short recovery time about 0.03 s at room temperature is predicted for the mustard desorption from the surface of BNG. We also showed that the electrical conductivity change relates to the mustard concentration. The results indicate that the BNG may be a promising sensor for mustard gas.     

Gasdynamic CO laser with closed-cycle gas flow

The operation of an electrically excited gasdynamic CO laser with closed-cycle gas flow is described. Details of the gasdynamics, the recompression, and the cooling of the flowing gas are given. The electrical discharge produces contaminating gas compounds—in particular CO₂—which accumulate in the recirculating gas. The resulting transient behavior of the laser gas composition, the discharge characteristics, and the laser performance are studied and compared with the results obtained with the same CO laser in an open-flow system. It is found that the closed-cycle system may be operated for considerable time if the CO₂ contamination is removed from the laser gas.     

Influence of total gas flow rate on microcrystalline silicon films prepared by VHF-PECVD

Hydrogenated microcrystalline silicon (\mu c-Si:H) films are fabricated by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at a silane concentration of 7% and a varying total gas flow rate (Hk₂+SiHk₄). Relations between the total gas flow rate and the electrical and structural properties as well as deposition rate of the films are studied. The results indicate that with the total gas flow rate increasing the photosensitivity and deposition rate increase, but the crystalline volume fraction (Xk_c) and dark conductivity decrease. And the intensity of (220) peak first increases then decreases with the increase of the total gas flow rate. The cause for the changes in the structure and deposition rate of the films with the total gas flow rate is investigated using optical emission spectroscopy (OES).     

Electrical contact properties of Cu2S nanowires grown vertically on Cu foil by gas–solid reaction

We grew Cu₂S nanowires vertically on Cu foil by gas–solid reaction with a gas mixture of O₂ and H₂S. The electrical contact properties between the Cu₂S nanowires and Cu foil were investigated using a modified current–voltage–temperature plot. The Cu/Cu₂S layer exhibited the characteristics of a Schottky barrier with a barrier height of ∼0.72 eV, which was closer to the value for Cu/Cu₂O than to Cu/Cu₂S. Energy dispersive spectroscopy results showed the presence of Cu-oxide between the Cu₂S nanowires and Cu foil. The overall structure was Cu/Cu-oxide/Cu₂S and the electrical properties were controlled by the Cu/Cu-oxide.     

Investigation of electrical and optical properties of ZnO thin films grown with O<Subscript>2</Subscript>/O<Subscript>3</Subscript> gas mixture

The electrical and optical properties of ZnO thin films grown with an O₂/O₃ gas mixture are compared with samples grown with pure oxygen gas. The ZnO films were grown on sapphire(0001) by pulsed laser deposition. The residual background carrier concentration is reduced by using an O₂/O₃ gas mixture as compared to pure molecular oxygen. In particular, a one order of magnitude reduction in residual background carrier density (6.15×10¹⁶ cm^-3) is achieved by using an O₂/O₃ gas mixture. The lower donor defect density is attributed to the generation of acceptor defects compensating for the residual donor defects. Photoluminescence results show that the deep level emission increased and the band edge emission decreased for the ZnO films grown with ozone, as compared to the samples grown with pure oxygen gas. PACS 73.61.Ga; 78.55Et; 81.05 Dz; 81.15.Fg     

Two-dimensional electron gas at the interface of Ba<Subscript>0.8</Subscript>Sr<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript> ferroelectric and LaMnO<Subscript>3</Subscript> antiferomagnet

The temperature dependence of the electrical resistance has been studied for heterostructures formed by antiferromagnetic LaMnO₃ single crystals of different orientations with epitaxial films of ferroelectric Ba_0.8Sr_0.2TiO₃ deposited onto them. The measured electrical resistance is compared to that exhibited by LaMnO₃ single crystals without the films. It is found that, in the samples with the film, for which the axis of polarization in the ferroelectric is directed along the perpendicular to the surface of the single crystal, the electrical resistance decreases significantly with temperature, exhibiting metallic behavior below 160 K. The numerical simulations of the structural and electronic characteristics of the BaTiO₃/LaMnO₃ ferroelectric?antiferromagnet heterostructure has been performed. The transition to the state with two-dimensional electron gas at the interface is demonstrated.     

Multilayered metal oxide thin film gas sensors obtained by conventional and RF plasma-assisted laser ablation

Multilayered thin films of In₂O₃ and SnO₂ have been deposited by conventional and RF plasma-assisted reactive pulsed laser ablation, with the aim to evaluate their behaviour as toxic gas sensors. The depositions have been carried out by a frequency doubled Nd-YAG laser (λ = 532 nm, τ = 7 ns) on Si(1 0 0) substrates, in O₂ atmosphere. The thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrical resistance measurements. A comparison of the electrical response of the simple (indium oxide, tin oxide) and multilayered oxides to toxic gas (nitric oxide, NO) has been performed. The influence on the structural and electrical properties of the deposition parameters, such as substrate temperature and RF power is reported.     

Enhanced H2S gas-sensing properties of Pt-functionalized In2Ge2O7 nanowires

In₂Ge₂O₇ one-dimensional (1D) nanostructures were synthesized using an evaporation technique. The morphology, crystal structure, and sensing properties of the In₂Ge₂O₇ nanostructures functionalized with Pt to H₂S gas at 100 ^°C were examined. The diameters and lengths of the 1D nanostructures were a few tens of nanometers and up to a few hundreds of micrometers, respectively. Pt nanoparticles with diameters of a few tens of nanometers were distributed over the In₂Ge₂O₇ nanowires. Gas sensors fabricated from the multiple networked In₂Ge₂O₇ nanowires functionalized with Pt exhibited enhanced electrical responses to H₂S gas compared to the uncoated In₂Ge₂O₇ nanowires. The responses of the nanowires were improved 240, 234, and 225 fold at H₂S concentrations of 10, 25, and 50 ppm, respectively. The enhanced electrical response of the Pt-functionalized In₂Ge₂O₇ nanowire sensor to H₂S gas can be attributed to a combination of the spillover effect and the enhanced chemisorption, as well as the dissociation of the gas.     

Chemical diffusion in calcium titanate

This work reports the gas/solid equilibration kinetics for the O₂/CaTiO₃ system. The electrical conductivity measurement was applied for monitoring the kinetics in the ranges of temperature 973-1323 K and oxygen partial pressure 10 Pa-72 kPa. It was found that the gas/solid equilibration kinetics for the polycrystalline CaTiO₃ specimen in the above experimental conditions is determined by bulk diffusion rather than by grain boundary conditions. The obtained data of the electrical conductivity vs. time were used for the determination of the chemical diffusion coefficient as a function of temperature at low and high p(O₂), respectively:

(1)     

Temporal extension of stable glow discharges in fluorine-based excimer laser gas mixtures by the addition of xenon

The effect of addition of xenon on the long term homogeneity of discharges in F₂and ArF excimer laser gas mixtures was investigated in a small-volume discharge chamber. The gas mixture in the discharge chamber was preionized by X-rays. A special electrical excitation circuit containing a pulse forming line provided a long, square-shaped current pumping pulse of a predetermined duration to the discharge electrodes. The initiation and the development of the discharge was monitored via its fluorescence signal with an intensified CCD camera. We found that adding Xe up to partial pressures of 0.53 mbar extended the homogeneous phase of the discharge from 80 ns to approximately 200 ns in He/F₂as well as in He/Ar/F₂and Ne/Ar/F₂excimer laser gas mixtures. Monitoring of the ArF and XeF spontaneous emission signals showed that the formation of ArF excimers remained unaffected by the addition of xenon (up to 1.3 mbar) to the laser gas mixture.