Substrate-induced modulation of the Raman scattering signals from self-assembled organic nanometric films

Raman scattering signals recorded by microscopy from organic self-assembled monolayers (thin nanometric films of calibrated thickness) on silica substrates were found to be much stronger than those obtained from identical films assembled on bulk silicon substrates. This effect, observed in the backscattering geometry, is shown to result from interferences between the direct and reflected beams (including both the excitation and scattered radiation) in front of a smooth reflecting surface. Strong dependence of the effect on the distance between the sampled monolayer and the bulk silicon substrate allows enhancement of the Raman signals of organic monolayer films on silicon by factors up to approximately 70 by using appropriate silica spacers. The dependence of the Raman signal intensity on film thickness was also studied for thicker nanometric films comprising a series of self-assembled organosilane multilayers on bulk silicon and fused silica substrates, and the predicted deviation from linearity in the case of the silicon substrate is experimentally confirmed.     

Growth and characterization of ultrathin carbon films on electrodeposited Cu and Ni

Ultrathin carbon films were grown on different types of metallic substrates. Free‐standing foils of Cu and Ni were prepared by electroforming, and a pure Ni film was obtained by galvanic displacement on a Si wafer. Commercial foil of Ni 99.95% was used as a reference substrate. Carbon films were grown on these substrates by chemical vapour deposition in a CH₄‐H₂ atmosphere. Obtained films were characterized by Raman spectroscopy, X‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, and ultraviolet photoemission spectroscopy. The XPS at grazing collection angle was used to determine the thickness of carbon films. Depending on the deposition parameters, the films of graphene or graphite were obtained on the different substrates. The uniformity of graphene and its distribution over the sample area were investigated from Raman data, optical images, and XPS chemical maps. The presence of graphene or graphite in the films was determined from the Raman spectra and Auger peak of C KVV. For this purpose, the D parameter, which is a fingerprint of carbon allotropes, was determined from C KVV spectra acquired by using X‐rays and electron beam. A formation of an intermediate layer of metal hydroxide was revealed in the samples with graphene overlayer.     

Backscattering effect in quantitative AES sputter depth profiling of multilayers

AES sputter depth profiles of multilayers with constituents of very different backscattering factors show characteristic distortions in the shape of the intensity–depth profiles. These distortions are quantified by introducing an extension of the local effective backscattering factor concept developed in an earlier paper in the mixing‐roughness‐information depth (MRI) model for profile quantification. The extension is based on a linear superposition of two newly defined parameters, the effective backscattering factors for each interface that are diminished with distance from the respective interface by another characteristic parameter, the mean effective backscattering decay length. As shown for a Ni/C multilayer structure of six alternating layers of Ni (38 nm) and C (25 nm) on a Si substrate, AES intensity depth profiles calculated with the presented modification of the MRI model, yield an excellent agreement with the measured profile after some adjustment of the initial mean effective backscattering decay lengths and, sometimes, after a slight change of the backscattering factors given by the Ichimura–Shimizu relations. The backscattering effect is studied as a function of the single layer thickness. A critical layer thickness can be determined, below which the backscattering influence becomes negligible for typical AES depth profiling results. Copyright © 2007 John Wiley & Sons, Ltd.     

Investigation of thin surface films by microprobe analysis

The electron microprobe has been applied to study thin films on metallic substrates. The intensities of the characteristic X-rays emitted by thin films of various elements and thicknesses on sublayers of different materials were measured. Two different theoretical approaches (Bishop and Poole, as well as Yakowitz and Newbury) were applied to interpet the X-ray intensities and to determine the film thickness from the intensity measurements. The effect of backscattering from the substrate, resulting in an increase of the intensity of characteristic X-rays of the film, is being described on the basis of a theory given by Hutchins. The corresponding equation for the backscattering factor has been modified to take into account the transmission of the electrons through the film, depending on the mass thickness of the film and the electron energy. The results obtained from theory and experiment are in good agreement for the different experimental parameters applied, except for very thick layers of high atomic numbers measured at low energies where the absorption of electrons in the film plays a dominant role.     

Electroless deposition of copper on polyimide films modified by surface graft copolymerization with nitrogen-containing vinyl monomers

Surface modification of Ar-plasma-pretreated polyimide (PI) films (Kapton® HN films) via UV-induced graft copolymerization with 1-vinylimidazole (VIDz), 4-vinylpyridine (4VP), and 2-vinylpyridine (2VP) under atmospheric conditions was carried out to improve their adhesion with the electrolessly deposited Cu. The surface compositions of the graft-copolymerized PI films were characterized by X-ray photoelectron spectroscopy. The adhesion strength of the electrolessly deposited Cu on the surface-graft-copolymerized PI film was affected by the type of monomers used for graft copolymerization and the graft concentration. T-peel adhesion strengths of about 15, 10, and 6?N/cm were obtained for the Cu/graft-modified PI assemblies involving, respectively, the VIDz, 4VP, and 2VP graft-copolymerized PI films. These adhesion strengths are much higher than those obtained for assemblies involving electrolessly deposited Cu on pristine or on Ar-plasma-treated PI films. The adhesion strengths involving the VIDz and 4VP surface-graft-copolymerized PI films are also higher than those involving PI films modified by chemical etching. The cohesive failure inside the PI substrate of the Cu/graft-modified PI assemblies during delamination suggested that not only were the grafted polymer chains covalently tethered on the PI film, they were also incorporated into the metal matrix during the electroless plating process.     

Enhancement of X-ray fluorescence intensity from an ultra-thin sandwiched layer at grazing-emission angles

Ni ultra-thin films sandwiched with carbon thin films of different thickness are measured by a laboratory grazing-emission X-ray fluorescence instrument. The Ni Kα intensity of the Ni ultra-thin film sandwiched with carbon layers is three times enhanced in comparison with the Ni ultra-thin film without carbon layers. In addition, oscillations caused by interference effects of directly observed X-ray beams and the reflected X-ray beams on the surface of the Pt substrate, are clearly observed. The periods of the oscillations depends on the thickness of the carbon layer, that is, the position of the Ni layer. Therefore, the thickness of the carbon layer can be estimated.     

薄膜CdSe及CdSexTe1-x电极的光电子能谱研究

用X射线光电子能谱(XPS)研究了不同含氧气氛中烧结的薄膜CdSe及Cdse_xTe_1-x电极表面,以及薄膜与Ti底基之间的界面。研究中发现,二种薄膜电极的表面形成了CdO,SeO₂及TeO₂氧化物,与薄膜接触的Ti底基表面上形成了TiO₂。用俄歇电子能谱(AES)对在电极表面及Ti表面所生成的氧化层分别进行了深度分析。结果表明,各种氧化物形成的程度有很大的不同,氧化层厚度也存在差异。对影响薄膜电极的光电性能的因素进行了讨论。     

Micro- and nanopatterned copper structures using directed self-assembly on templates fabricated from phase-separated mixed Langmuir-Blodgett films

We report a versatile method to confine metal thin films in micro- and nanopatterns using directed self-assembly on the templates fabricated from phase-separated mixed Langmuir-Blodgett (LB) films. The pattern of the mixed LB films can be tuned by adjusting intermolecular interaction between the film-forming molecules in the LB films and by varying the fabrication conditions of the films such as the mixing ratio, subphase temperature, and surface pressure. We use the patterned LB films for templates to confine metal in patterned regions, taking advantage of the difference between the surface free energy of the patterned regions and that of the self-assembled monolayer of the silane coupling agent. Au nanoparticles are confined onto the patterned films as a catalyst for the succeeding Cu electroless deposition. The atomic force microscopic images, Auger electron spectra, and scanning Auger electron maps of a Cu-deposited film show that Cu is selectively deposited on the patterns of phase separation of the original mixed LB films.     

Full hemispherical photoelectron diffraction and Fermi surface mapping

The routine measurement of full hemispherical photoemission intensity maps gives us the possibility for the combined investigation of structural and electronic phenomena at surfaces. As an example the growth of ultrathin films of Co on Cu(111) is studied as a function of film thickness. While X-ray photoelectron diffraction (XPD) shows the early appearance of stacking faults as a precursor of the hcp structure, Fermi surface maps reveal the very fast evolution of the Co Fermi surface that can be compared to measurements on a clean Co(0001) crystal. For the system O/Rh(111), XPD brings up important structural clues, relating changes in surface reactivity to small amounts of subsurface oxygen, which forces adjacent oxygen atoms to occupy new and more reactive adsorption sites. In the course of this last study we observed for the first time the weak backscattering signals in the angular pattern of adsorbate emission. These cone-like features are extremely sensitive to the adsorbate–substrate bond length.     

单一稀土镧在不同基底上的电沉积及其性能的研究

研究在低温熔融盐体系中于不同基底上电沉积单一稀土金属镧（La）。经X-射线能谱仪测定,在镍片基底上沉积的La的质量分数为100％,铜片基底上沉积的La质量分数为72．84％;在镍铁合金灯丝上沉积得到La-Ni合金薄膜,其中La的质量分数为50．02％,Ni的质量分数为2．48％。经扫描电子显微镜观察,所得的沉积膜为均匀、光滑、致密的黑色沉积薄膜。经X-射线衍射仪分析,镧在不同基底上沉积所得的沉积膜为不同晶型,以镍片为基底得到的单质镧为α-六方晶型;以铜片为基底得到的单质镧为面心立方晶;均与基底晶型相匹配。在镍铁合金灯丝上电沉积所得的La-Ni合金薄膜致密均匀,在无水乙醇中久浸而不脱落,并呈现强磁性。     

Surface and interface analysis of titanium nitride diffusion barriers

Titanium nitride films were produced on silicon substrate by ion beam assisted deposition in the alternate mode: first, thin titanium layers were deposited by electron beam evaporation and then titanium nitride was formed by nitrogen implantation at room temperature; this cycle was then iterated many times in order to obtain thicker titanium nitride layers. The obtained films were characterized with respect to atomic composition by Rutherford backscattering spectrometry and nuclear reaction analysis techniques, while chemical bonding was investigated by Auger line-shape analysis. We observe that nitrogen implantation, along with the production of titanium nitride, induces silicon migration into the film. Silicon transport is connected to point defects produced by ion implantation as well as by chemical driving forces associated with silicides formation.     

On sub-T(g) dewetting of nanoconfined liquids and autophobic dewetting of crystallites

The glass transition temperature (T(g)) of thin films is reduced by nanoconfinement, but it is also influenced by the free surface and substrate interface. To gain more insights into their contributions, dewetting behaviors of n-pentane, 3-methylpentane, and toluene films are investigated on various substrates as functions of temperature and film thickness. It is found that monolayers of these molecules exhibit sub-T(g) dewetting on a perfluoro-alkyl modified Ni substrate, which is attributable to the evolution of a 2D liquid. The onset temperature of dewetting increases with film thickness because fluidity evolves via cooperative motion of many molecules; sub-T(g) dewetting is observed for films thinner than 5 monolayers. In contrast, monolayers wet substrates of graphite, silicon, and amorphous solid water until crystallization occurs. The crystallites exhibit autophobic dewetting on the substrate covered with a wetting monolayer. The presence of premelting layers is inferred from the fact that n-pentane crystallites disappear on amorphous solid water via intermixing. Thus, the properties of quasiliquid formed on the crystallite surface differ significantly from those of the 2D liquid formed before crystallization.     

Effects of substrate on the melting behavior of Cd arachidate Langmuir–Blodgett films

Nineteen monolayered Cd arachidate films were deposited on float glass substrate coated with Si and Ni over-layers. Two layers have been chosen with very different surface free energies. Melting behavior of films were studied using variable temperature X-ray specular reflectivity and Fourier transform infrared spectroscopy measurements. In conformity with earlier studies, melting of the multilayer precede by a transition from distorted hexagonal to hexaticlike phase. However, the transition temperature to hexaticlike phase as well as the melting temperature depend significantly on the type of layer. Both the transition temperatures are higher for the multilayer deposited on Ni layer as compared to those for the film deposited on Si layer. These results can be understood in terms of different surface free energies of Ni and Si layers. Further, in case of Ni layer, transition to hexaticlike phase is relatively sharper. Even in the molten state there is a significant difference in the structure of the Cd arachidate film on two layers; packing density of molecules in molten state is lower in case of substrate with higher surface free energy. These results suggest that the surface free energy of substrate plays a significant role in melting behavior of Langmuir–Blodgett films.     

Comprehensive comparison of various techniques for the analysis of elemental distributions in thin films

The present work shows results on elemental distribution analyses in Cu(In,Ga)Se2 thin films for solar cells performed by use of wavelength-dispersive and energy-dispersive X-ray spectrometry (EDX) in a scanning electron microscope, EDX in a transmission electron microscope, X-ray photoelectron, angle-dependent soft X-ray emission, secondary ion-mass (SIMS), time-of-flight SIMS, sputtered neutral mass, glow-discharge optical emission and glow-discharge mass, Auger electron, and Rutherford backscattering spectrometry, by use of scanning Auger electron microscopy, Raman depth profiling, and Raman mapping, as well as by use of elastic recoil detection analysis, grazing-incidence X-ray and electron backscatter diffraction, and grazing-incidence X-ray fluorescence analysis. The Cu(In,Ga)Se2 thin films used for the present comparison were produced during the same identical deposition run and exhibit thicknesses of about 2 μm. The analysis techniques were compared with respect to their spatial and depth resolutions, measuring speeds, availabilities, and detection limits.     

以光辅助MOCVD法在有取向Ni衬底及LAO单晶衬底上制备YBCO外延膜的比较研究

采用光辅助金属有机物化学气相沉积(MOCVD)法,在生长有CeO2/YSZ/Y2O3(YSZ为Y稳定的ZrO2)缓冲层的双轴取向Ni衬底上进行了YBa2Cu3O7-x(YBCO)外延膜生长,并与LaAlO3(100)[LAO(100)]单晶衬底上的YBCO外延膜生长进行了对比.发现在Ni衬底上c轴取向YBCO外延膜的生长温度比LAO衬底上的生长温度低约30℃,但生长速度更快.经分析认为,这种差别主要是由于Ni衬底的热导率比LAO衬底高造成的.Ni衬底及LAO衬底上生长的c轴取向YBCO外延膜的超导极限电流密度(Jc)分别约为0.5 MA/cm2及1.8 MA/cm2.     

Thickness dependence of the structural,mechanical and electrical properties of Ni films deposited on polyimide by ion beam‐assisted deposition (IBAD)

Ni thin films with different thicknesses were deposited on pre‐treated polyimide substrates by ion beam‐assisted deposition. Dependence of structural, mechanical and electrical properties of the Ni films on their thickness was investigated. The results showed a clear correlation between film properties and film thickness. The inter‐diffusion at the interface regions of the films with different deposition time were demonstrated by transmission electron microscopy and X‐ray photoelectron spectroscopy. With increasing film thickness, surface roughness of the Ni films firstly decreased and then increased, while the grain size gradually increased. Residual stress of the Ni thin films decreased with increasing Ni film thickness up to 202 nm and then slightly increased as the film thickness further increased. Resistivity decreased, and temperature coefficient of resistivity (TCR) increased with increasing film thickness due to the enhancement of crystallization degree and the increase in grain size. The decrease in surface roughness and residual stress also contributed to the decrease of resistivity and the increase of TCR of the films. An optimal film thickness is suggested, which yielded a relatively high TCR value and low levels of both surface roughness and residual stress. Copyright © 2012 John Wiley & Sons, Ltd.     

Thickness and temperature‐dependent study of Co/Si interface

Thin films of cobalt (10, 40, and 100 nm) are deposited on Si substrate by electron beam physical vapor deposition technique. After deposition, 4 pieces from each of the wafers of silicon substrate were cut and annealed at a temperature of 200°C, 300°C, and 400°C for 2 hours each, separately. X‐ray diffraction, atomic force microscopy, and transmission electron microscopy (TEM) are used to study the structural and morphological characteristics of the deposited films. To obtain TEM images, Co films are deposited on Cu grids; so far, no such types of TEM images of Co films are reported. Structural studies confirm nanocrystalline nature with hexagonal close packed structure of the deposited Co film at lower thickness, while at higher thickness, film structure transforms to amorphous with lower surface roughness value. The particle sizes in all the cases are in the range of 3 to 5 nm. Micro‐Raman spectroscopy is also used to study the phase formation and chemical composition as a function of thickness and temperature. The results confirm that the grown films are of good quality and free from any impurity. Studies show the silicide formation at the interface during deposition. The appearance of new band at 1550 cm⁻¹ as a result of annealing indicates the structural transformation from CoSi to CoSi₂, which further enhances at higher annealing temperatures.     

计算机硬盘基片CMP中表面膜特性的分析研究

目前,普遍采用化学机械抛光(Chemical-mechanical polishing,CMP)技术对计算机硬盘基片(盘片)表面进行原子级平整。CMP加工中,盘片表面膜及其特性对CMP过程及CMP性能具有关键作用。本文分别采用俄歇能谱(AES)、X射线光电子能谱(XPS)、扫描电镜(SEM)、纳米硬度计、电化学极化法等分析手段对盘片表面物理、化学及机械特性进行了研究,发现盘片CMP后表面发生了氧化,氧化膜在盘片的表层,厚度在纳米量级,氧化产物为Ni(OH)₂;氧化膜为较软的、疏松的、粗糙的多孔结构;氧化膜的存在加快了盘片表面的腐蚀磨损。结合盘片CMP试验结果,推测盘片的CMP机理为盘片表面氧化生成机械强度较低的Ni(OH)₂氧化膜及随后氧化膜的机械和化学去除,二者的不断循环实现表面的全局平面化。     

A tracer investigation of chromic acid anodizing of aluminium

A tungsten tracer introduced into a sputtering‐deposited aluminium substrate was employed to investigate pore development in anodic films formed at 3 mA cm^?2 in 0.25 M chromic acid electrolyte at 313 K. The anodized specimens were observed by transmission electron microscopy (TEM), with compositions of films determined by Rutherford backscattering spectroscopy (RBS). The anodic films were found to be similar in thickness to that of the aluminium layer consumed during anodizing and revealed the feathered pore morphology that is a characteristic of the electrolyte. The anodizing efficiency was ～45–48%, with tungsten tracer species, in addition to aluminium species, being lost to the electrolyte at the pore base. These findings, together with the relatively uniform distribution of tungsten species within the film, are consistent with field‐assisted dissolution of the alumina playing a major role in the development of pores. The films contrast with those formed in phosphoric and sulphuric acid electrolytes, for which feathering of pores is absent, the tracer distribution is inverted and the film thickness exceeds that of the consumed metal, features indicative of the influence of material flow in pore development. Copyright © 2007 John Wiley & Sons, Ltd.     

Asymmetric Ni/PVC films for high-performance electromagnetic interference shielding

A novel asymmetric Ni/PVC film has been developed by solution casting method. The structure, electrical conductivity, electromagnetic interference(EMI) shielding, and impact resistance were investigated. The results showed that the Ni particles were asymmetrically distributed along the thickness direction in the film. The top surface resistivity increased with film thickness, while the bottom surface exhibited the different trend. EMI shielding effectiveness(SE) depended on formation of closed packed conductive Ni network, which was influenced by both Ni content and film thickness. A linear relationship was observed between EMI SE and film thickness. The films with lower Ni content showed the faster increasing rate of EMI SE with film thickness. Some of the films show appreciably high EMI SE( 40 d B), indicating the promising application in EMI shielding field. Moreover, the films exhibit different impact performance under different impacting directions. All the experimental facts demonstrate that the asymmetric structure endows the film achieving high-performance EMI shielding function.