Mechanism of radiation pulse shortening in plasma relativistic microwave generator

The causes of emission quenching in the plasma relativistic microwave generator are studied by numerical calculations using the particle-in-cell method. The process mechanism in which the plasma boundary moves from the coaxial collector edge with a velocity above 10⁷ cm/s is found. An electron flux with an energy of ～10⁵ eV and a current of ～10³ A is generated from the collector in the formed gap, which heats plasma and increases its potential. Microwave generation stops due to a multiple decrease in the wave reflectance from the collector. The use of the hollow collector is presumably a method for preventing microwave generation quenching.     

Doppler Broadening and Magnetic Field Effects on the Balmer Lines Emitted at the Edge of a Tokamak Plasma

Profiles of the Balmer lines D_a(H_a), D_β(H_β) and D_γ(H_γ) have been measured in the scrape-off layer and within the edge of the TEXTOR (upgrade) plasma, under Ohmic conditions and with neutral-beam injection. Each line profile shows a strong Zeeman effect in the vicinity of line centre, and a marked central dip when mainly the σ components are observed. The line core evidently originates from cold atoms in the edge plasma, excited in the course of molecular dissociation, while the broad pedestal on which the core rests is radiated by excited atoms produced through charge-exchange recombination of deuterons (protons), transported outwards from the much hotter plasma interior, and by atoms heated directly by collisions with the deuterons (protons). Core temperatures of about 0.5 eV and less are obtained from line profile analysis.     

Langmuir Probe in Non‐Maxwellian Plasma: Correlation Between the Electron Energy Distribution Function,the Ion Energy at the Sheath Edge and the Floating Voltage

This work is devoted to the study of the Langmuir probe in non‐Maxwellian plasma, assuming mono‐energetic singly charged ions and a collisionless sheath. Using a general analytical equation for the Electron Energy Distribution Function (EEDF), we study the effect of the EEDF profile on: a) The ion energy at the sheath edge of a negatively biased collector, b) the I‐V probe characteristic and c) the floating voltage (V_p‐Vf). Different methods are used and compared to determine these parameters or characteristics. A correlation is given between the floating voltage, the ion energy at the sheath edge and the EEDF profile. The study is also extended to distribution functions with several components. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Appearance of a Hα Minimumat the Onset of Net Recombination in Hydrogen Plasmas

Hydrogen plasmas out of ionization equilibrium are either ionizing or recombining depending on the electron temperature T_e . Within the transition region between these two opposite states a minimum of the H_α emission is often experimentally observed. Simple cases were previously analyzed which could be interpreted assuming only a temperature variation, i.e the electron density was constant in the transition region. Here we discuss two examples in which both the density and the temperature vary at the transition. In the linear plasma generator PSI‐II a hydrogen plasma is cooled down by puffing additional gas. We find a minimum at T_min ≈ 1.1 eV. A second example is the effect of an ELM(edge localized mode) pulse propagating through a recombining divertor plasma in the tokamak ASDEX Upgrade. The H_α response shows a double peak which can be interpreted as a local minimum assuming a simultaneous rise of density and temperature during an ELM. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

汽车尾气颗粒物的STXM和NEXAFS研究

为了研究汽车尾气颗粒物的结构和氮的种态,使用扫描透射X射线显微成像(STXM)技术研究了桑塔纳3000和高尔汽车尾气颗粒物.STXM表明单颗粒物的粒径为500nm,颗粒物质量分布不均匀,有中间空洞.比较汽车尾气颗粒物和(NH4)2SO4和NaNO3中N的1sX射线近边吸收精细结构谱(NEXAFS),铵盐在406eV有显著的σ*吸收峰,有肩部结构;汽车尾气颗粒物和NaNO3中N的近边吸收谱在412eV和418.5eV有明显的σ吸收峰;(NH4)2SO4中N的近边吸收谱在413.5eV和421.8eV更宽的σ吸收峰.硝酸盐是汽车尾气颗粒物中的N化学种态的主要存在形式.在395—418eV能量范围内对桑塔纳3000汽车尾气颗粒物进行堆栈扫描,经过主成分分析和聚类分析,发现其表层主要为硝酸盐,内部有少量铵盐.     

Investigation of the characteristic energy losses of platinum (111)

With the help of a combined LEED- and Auger-investigation, the surface of a platinum (111) crystal was cleaned first. Then, the spectrum of the characteristic energy losses for both contaminated and cleaned surfaces is studied. On the cleaned surface the following losses were found: ΔE ₁=7.4 eV, ΔE ₂=13.5 eV, ΔE ₃=24.8 eV, ΔE ₄=31.8 eV, ΔE ₅=45.1 eV, ΔE ₆=54.1 eV, ΔE ₇=71.2 eV. The present results are compared with the measurement of other investigators. In particular, in good agreement with optical measurements we identify ΔE ₁ and ΔE ₂ as interband transitions, and ΔE ₃ and ΔE ₄ as surface and volume plasma loss, respectively.     

反应气压对直流磁控反应溅射制备的氧化银薄膜的结构和光学性质的影响

利用直流磁控反应溅射技术,通过调节反应气压(RP),在250 ℃衬底温度下制备了一系列氧化银 (Ag_xO) 薄膜,并利用X射线衍射谱、能量色散谱和分光光度计重点研究了RP对Ag_xO薄膜的结构和光学性质的影响. 研究结果表明,随着RP从0.5 Pa升高到3.5 Pa,薄膜明显呈现了从两相(AgO+Ag₂O)到单相(Ag₂O)结构再到两相(Ag₂O+AgO)结构的演变. 特 关键词： 氧化银薄膜 直流磁控反应溅射 X射线衍射谱 光学性质     

Comments on the Bohm Criterion and on the Determination of the Ion Velocity at the Sheath Edge in Non‐Maxwellian Plasma

This work is devoted to the study of the Bohm criterion in the general case of the electron energy distribution function (EEDF). Investigations are performed by means of a Monte Carlo integration method. We resolve the cold fluid equation system describing the ion motion within the sheath, assuming collisionless conditions, singly charged and mono kinetic incoming ions (BOHM model). Results confirm that the limit ion velocity at the sheath edge to assure a monotone electric field with a positive charge over the entire sheath is v_i ≥ (kT_e/M_i) or ε_i ≥ 1/3 <ε_e> in the case of Maxwellian electrons. We show that in the case of a Druyvesteyn electron energy distribution, this limit is larger, it is ε_i ≥ 0.6 <ε_e>. The study is also extended to other distributions functions. Because of the large controversy in recent publications, concerning the boundary conditions at the sheath entrance, we discuss the collisionless conditions at the sheath edge according to the plasma parameters. It is shown that in a collisionless sheath, the condition n_i(χ) ≥ n_e(χ) can be used to determine the limit ion velocity at the sheath edge of the negatively biased collector (Langmuir probe for instance) (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Experimental measurements and modelling of the structure of the radial electric field in RFX

The experimental determination of the radial electric fieldE _r and the associatedE ×B drift velocity at the edge of RFX is presented and possible mechanisms responsible for its generation are discussed.E _r measurements by means of an array of Langmuir probes and those deduced from Doppler spectroscopy of impurity lines agree fairly well. In particular the rotation velocity of the plasma edge has been determined from the Doppler shift of a C III emission line. The observation of other ions characterised by different radial positions, such as B IV and C V, has allowed an estimate of the velocity shear. Typical values of plasma rotation at the edge are around 10 km/s while the velocity shear is of the order of (10⁵−10⁶)s⁻¹ in the spontaneous layer, a few cm thick, usually observed in standard discharges. Plasma rotation has been artificially modified by both positive and negative edge biasing and the associated increase or decrease of the fluid velocity is well in agreement with the radial electric field change. The modification ofE _r during edge biasing and Pulsed Poloidal Current Drive (PPCD) are also reported and interpreted within a momentum balance model. Analytical and self-consistent Monte Carlo models at the plasma edge suggest that impurities have a relevant role in the generation of the radial electric field, due to their relatively large Larmor radius. Presented at the Workshop on Role of Electric Fields in Plasma Confinement and Exhaust, Budapest, 18–19 June 2000.     

Thickness and angular dependence of the L‐edge X‐ray absorption of nickel thin films

We report on the near‐edge X‐ray absorption fine structure spectroscopy of the L₃ (2p_3/2) and L₂ (2p_1/2) edges for ferromagnetic pure nickel transition metal and show that the L_2,3 edge peak intensity and satellite feature at ~6 eV above the L₃ edge in nickel increase with increasing nickel film thickness both in the total electron yield and transmission modes. The absorption spectra of nickel metal, however, exhibit strong angular‐dependent effects when measured in total electron yield mode. In addition, we calculated the mean electron escape depth of the emitted electrons (λ_e), which was found for pure nickel metal to be λ_e=25 ± 2 Å. We point out the advantages of the total electron yield technique for the study of the L‐edge of 3d transition metals. Copyright © 2011 John Wiley & Sons, Ltd.     

Angle-resolved UV photoemission from Y(0001)

We observe a number of well defined peaks in the photoemission spectra from Y(0001) over the photon energy range 25 eV<hv<60 eV. We believe that one of the features with a binding energy of 1.7 eV is due to emission from states near the upper band edge at the point and that a second nearE _F originates from a surface state. We find a large peak at a binding energy of 9.6 eV which is sensitive to the quality of the surface.     

Control of the Interface Between Electron‐Hole and Electron‐Ion Plasmas: Hybrid Semiconductor‐Gas Phase Devices as a Gateway for Plasma Science

Coupling electron‐hole (e^–‐ h⁺) and electron‐ion plasmas across a narrow potential barrier with a strong electric field provides an interface between the two plasma genres and a pathway to electronic and photonic device functionality. The magnitude of the electric field present in the sheath of a low temperature, nonequilibrium microplasma is sufficient to influence the band structure of a semiconductor region in immediate proximity to the solid‐gas phase interface. Optoelectronic devices demonstrated by leveraging this interaction are described here. A hybrid microplasma/semiconductor photodetector, having a Si cathode in the form of an inverted square pyramid encompassing a neon microplasma, exhibits a photosensitivity in the ～420–1100 nm region as high as 3.5 A/W. Direct tunneling of electrons into the collector and the Auger neutralization of ions arriving at the Si surface appear to be facilitated by an n ‐type inversion layer at the cathode surface resulting from bandbending by the microplasma sheath electric field. Recently, an npn plasma bipolar junction transistor (PBJT), in which a low temperature plasma serves as the collector in an otherwise Si device, has also been demonstrated. Having a measured small signal current gain h_fe as large as 10, this phototransistor is capable of modulat‐ing and extinguishing the collector plasma with emitter‐base bias voltages <1 V. Electrons injected into the base when the emitter‐base junction is forward‐biased serve primarily to replace conduction band electrons lost to the collector plasma by secondary emission and ion‐enhanced field emission in which ions arriving at the base‐collector junction deform the electrostatic potential near the base surface, narrowing the potential barrier and thereby facilitating the tunneling of electrons into the collector. Of greatest significance, therefore, are the implications of active, plasma/solid state interfaces as a new frontier for plasma science. Specifically, the PBJT provides the first opportunity to control the electronic properties of a material at the boundary of, and interacting with, a plasma. By specifying the relative number densities of free (conduction band) and bound (valence band) electrons at the base‐collector interface, the PBJT's emitter‐base junction is able to dictate the rates of secondary electron emission (including Auger neutralization) at the semiconductor‐plasma interface, thereby offering the ability to vary at will the effective secondary electron emission coefficient for the base surface (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Plasma edge and optical phonon spectra of the high-temperature superconductor La1.85Sr0.15CuO4

We report the reflectance spectra of pressed powder samples of the high-temperature superconductor La_1.85Sr_0.15CuO₄ and of La₂CuO₄ in the energy range beteween 30 meV and 6 eV. The spectrum of the superconducting compound differs remarkably from those of conventional metals. It shows a plasma edge in the near infrared with a plasma energy of ℏω_p = 0.8 eV and optical phonons up to an energy of 90 meV. The optical results yield a very low carrier concentration of 1.7 x 10²¹cm³.     

<Emphasis Type="Italic">I-V,C-V</Emphasis> and deep level transient spectroscopy study of 24 MeV proton-irradiated bipolar junction transistor

This paper describes the effect of 24 MeV proton irradiation on the electrical characteristics of a pnp bipolar junction transistor 2N 2905A. I-V, C-V and DLTS measurements are carried out to characterize the transistor before and after irradiation. The properties of deep level defects observed in the bulk of the transistor are investigated by analysing the DLTS data. Two minority carrier levels, E _C − 0.27 eV and E _C − 0.58 eV and one majority carrier level, E _V +0.18 eV are observed in the base collector junction of the transistor. The irradiated transistor is subjected to isochronal annealing. The influence of isochronal annealing on I-V, C-V and DLTS characteristics are monitored. Most of the deep level defects seem to anneal out above 400°C. It appears that the deep level defects generated in the bulk of the transistor lead to transistor gain degradation. A comparison of proton- and electron-induced gain degradation is made to assess the vulnerability of pnp transistor as against npn transistors.     

金红石相VO2电子结构与光电性质的第一性原理研究

采用完全势线性缀加平面波方法(FP-LAPW)结合密度泛函+U(DFT+U)模型计算了金红石相VO₂的电子结构和光学性质. 电子态密度计算结果表明所采用的方法可以较好的描述体系的导带电子结构. 计算得到体系为导体,V-O键主要由O原子的2 p轨道与V原子的3 d轨道杂化形成,外加光场垂直和平行于c轴时体系的等离子振荡频率为3.44 eV和2.74 eV,光电导率在0-1 eV之间有一个与带内跃迁有关的德鲁德峰,而大于1 eV的光电导率主要由电子带间跃迁产生,得到并分析了带内跃迁过程和带间跃迁过程各自对反射谱和电子能量损失谱的贡献. 关键词： 光电性质 电子结构 缀加平面波方法 2')" href="#">VO₂     

Influence of Sr doping on the free carrier absorption in high-T c superconductors La2−x SrxCuO4

The reflectance spectra of polycrystalline La_2–x Sr _x CuO₄ samples were investigated in the energy range between 50 meV and 4 eV in dependence of the Sr content. The spectra are attributed to free carrier absorption of the Drude type, superimposed by optical phonon excitations below 0.1 eV and intrinsic absorption above 1 eV. From the influence of Sr doping onto the plasma energy it is deduced that La_2–x Sr _x CuO₄ is ap-type conductor with a maximum carrier concentration of 2.0×10²¹ cm^–3 forx=0.15. The results are interpreted in terms of a Hubbard model with an empty upper and ap-doped lower Hubbard band with a width of 1.9 eV.     

Extended X‐ray absorption fine structure and multiple‐scattering simulation of nickel dithiolene complexes Ni[S2C2(CF3)2]2n (n = −2, −1, 0) and an olefin adduct Ni[S2C2(CF3)2]2(1‐hexene)

A series of Ni dithiolene complexes Ni[S₂C₂(CF₃)]₂ⁿ (n = ?2, ?1, 0) ( 1 , 2 , 3 ) and a 1‐hexene adduct Ni[S₂C₂(CF₃)₂]₂(C₆H₁₂) ( 4 ) have been examined by Ni K‐edge X‐ray absorption near‐edge structure (XANES) and extended X‐ray absorption fine‐structure (EXAFS) spectroscopies. Ni XANES for 1 – 3 reveals clear pre‐edge features and approximately +0.7 eV shift in the Ni K‐edge position for `one‐electron' oxidation. EXAFS simulation shows that the Ni—S bond distances for 1 , 2 and 3 (2.11–2.16 Å) are within the typical values for square planar complexes and decrease by ～0.022 Å for each `one‐electron' oxidation. The changes in Ni K‐edge energy positions and Ni—S distances are consistent with the `non‐innocent' character of the dithiolene ligand. The Ni—C interactions at ～3.0 Å are analyzed and the multiple‐scattering parameters are also determined, leading to a better simulation for the overall EXAFS spectra. The 1‐hexene adduct 4 presents no pre‐edge feature, and its Ni K‐edge position shifts by ?0.8 eV in comparison with its starting dithiolene complex 3 . Consistently, EXAFS also showed that the Ni—S distances in 4 elongate by ～0.046 Å in comparison with 3 . The evidence confirms that the neutral complex is `reduced' upon addition of olefin, presumably by olefin donating the π‐electron density to the LUMO of 3 as suggested by UV/visible spectroscopy in the literature.     

Soft X‐ray absorption spectroscopy and resonant inelastic X‐ray scattering spectroscopy below 100 eV: probing first‐row transition‐metal M‐edges in chemical complexes

X‐ray absorption and scattering spectroscopies involving the 3d transition‐metal K‐ and L‐edges have a long history in studying inorganic and bioinorganic molecules. However, there have been very few studies using the M‐edges, which are below 100 eV. Synchrotron‐based X‐ray sources can have higher energy resolution at M‐edges. M‐edge X‐ray absorption spectroscopy (XAS) and resonant inelastic X‐ray scattering (RIXS) could therefore provide complementary information to K‐ and L‐edge spectroscopies. In this study, M_2,3‐edge XAS on several Co, Ni and Cu complexes are measured and their spectral information, such as chemical shifts and covalency effects, are analyzed and discussed. In addition, M_2,3‐edge RIXS on NiO, NiF₂ and two other covalent complexes have been performed and different d–d transition patterns have been observed. Although still preliminary, this work on 3d metal complexes demonstrates the potential to use M‐edge XAS and RIXS on more complicated 3d metal complexes in the future. The potential for using high‐sensitivity and high‐resolution superconducting tunnel junction X‐ray detectors below 100 eV is also illustrated and discussed.     

Optical properties and interband transitions in the layered compounds SbI3

The optical constants of SbI₃ single crystals, prepared from solution, were calculated from normal incidence reflectance data via a Kramers-Kronig analysis. The dependence of the absorption coefficient on the photon energy suggests the presence of a direct allowed interband transition whereE _g ^d =2·225 eV at room temperature, as well as indirect phonon-assisted transition. The absorption coefficient follows Urbach's empirical relation in the range 2·08–2·34 eV near the intrinsic edge, and a Gaussian shape was obtained near the band maximum. This behaviour is indicative of its excitonic origin and may be contributed to localized excitons in the crystal.