GaAs和InP基HFET工艺中的选择腐蚀

综合了ＧａＡｓ和ＩｎＰ基ＨＦＥＴ工艺中选择腐蚀技术的有关报道,重点介绍了应用ＩＣＰ设备和气体组合ＢＣＩ＋ＳＦ６进行异质结材料组合的干法腐蚀实验,腐蚀后在显微镜和扫描电镜窗口平整干净、作迁移率测试等为法腐蚀的片子相比较没有看出差别,适宜用于器件工艺。     

1.3μm InGaAsP/InP长寿命激光器

本交报道精心外延及光刻腐蚀,使外延片质量提高,器件的光电特性得到改善。最低闽值电流I_(th)=17mA,外微分效率η=25%(单面),最高连续激射温度为130℃,最大输出功率超过40mW。采用PbSn焊料改进制管工艺,提高了器件的可靠性。器件在25℃时的中值寿命为26万小时。     

InGaAsP／InP掩埋条型激光器的漏电流分析

本文针对Ｐ－Ｎ－Ｐ－Ｎ埋区结构中的漏电流，用广义Ｐ－Ｎ－Ｐ－Ｎ三端器件的理论模型，细致地分析和模拟计算了Ｐ－Ｎ－Ｐ－Ｎ掩埋型ＢＨ激光器的漏电流特性，并据此给出了优化设计器件的数据曲线．通过具体的激光器工艺，我们做出的ＦＢＨ激光器的漏电流大大减小，激光器的线性输出光功率可高达２０ｍＷ，室温寿命超过１０万小时．     

全固源分子束外延生长InP和InGaAsP

在国产分子束外延设备的基础上,利用新型三温区阀控裂解源炉,对InP及InGaAsP材料的全固源分子束外延(SSMBE)生长进行了研究.生长了高质量的InP外延层,表面缺陷密度为65cm-2,非故意掺杂电子浓度约为1×1016cm-3.InP外延层的表面形貌、生长速率及p型掺杂特性与生长温度密切相关.研究了InGaAsP外延材料的组分特性,发现在一定温度范围内生长温度对Ⅲ族原子的吸附系数有较大影响.最后得到了晶格匹配的In0.56Ga0.4As0.04P06材料,低温光致发光谱峰位于1507 nm,FWHM为9.8 meV.     

InGaAsP／InP激光器非平面液相外延生长的研究

本文叙述了用于制作 InGaAsP/InP 半导体激光器的非平面液相外延工艺。讨论了各种因素对非平面液相外延生长的影响。在 InP 衬底上和刻有沟槽的 InGa-AsP/InP 外延片上成功地生长出了高质量外延层。用该外延片制作的激光器在室温连续工作条件下典型阈值电流30mA,典型输出功率为10mW。最高激射温度为115℃。     

全固源分子束外延生长InP和InGaAsP

在国产分子束外延设备的基础上 ,利用新型三温区阀控裂解源炉 ,对 In P及 In Ga As P材料的全固源分子束外延 (SSMBE)生长进行了研究。生长了高质量的 In P外延层 ,表面缺陷密度为 65cm- 2 ,非故意掺杂电子浓度约为 1× 1 0 16cm- 3.In P外延层的表面形貌、生长速率及 p型掺杂特性与生长温度密切相关 .研究了 In Ga As P外延材料的组分特性 ,发现在一定温度范围内生长温度对 族原子的吸附系数有较大影响 .最后得到了晶格匹配的 In0 .56Ga0 .4 4 As0 .94 P0 .0 6材料 ,低温光致发光谱峰位于 1 50 7nm,FWHM为 9.8me V.     

1.3μm InGaAsP／InP RWG型激光器的可靠性

通过对１．３μｍＩｎＧａＡｓＰ／ＩｎＰＲＷＧ型激光器的加速老化寿命试验，证明了此种结构激光器的可靠性，它在环境温度为５０℃、１００ｍＡＣＷ及环境温度为８０℃、１００ｍＡＣＷ的条件下加速老化，经过３２２０ｈ的实际测试共计１９３２００器件小时，在测试过程中没有一支器件失效。在这样的条件下其５０℃下的外推寿命ＭＴＴＦ为２０万ｈ，其统计标准偏差为σ＝１．０１６；８０℃下的外推寿命ＭＴＴＦ为３．８万ｈ，其统计标准偏差为σ＝０．８０４，从而推算出该结构激光器的退化激活能Ｅａ＝０．５４３ｅＶ，其２５℃下的寿命ＭＴＴＦ为１０３万ｈ。     

显示GaAs/AlGaAs缺陷的新方法——超声AB腐蚀

本文提出了一种采用超声 AB腐蚀方法显示 GaAs/AlGaAs单晶缺陷的新方法.该方法可以在自然光环境、常温下显示位错露头、位错线、层错、微沉淀及生长条纹等多种晶体缺陷,分辨率高,腐蚀坑形状规则,操作简便.     

InGaAsP／InP系选择性刻蚀技术

比较了用于ＩｎＧａＡｓＰ／ＩｎＰ系的几种腐蚀液的选择性刻蚀效果并给出了最佳选择性刻蚀条件。     

Transient-mode liquid phase epitaxy of GaAs on InP and AlGaAs on GaP

Transient-mode liquid epitaxy (TMLE), where a cooler substrate is inserted into a hotter solution, has been used to grow layers on substrates which are mismatched ± 3,7%, Both AlGaAs on GaP and GaAs on InP have been sucessfully deposited. An improved surface morphology is observed in both cases when this technique is employed and is shown by IR transmission and x-ray topography to be caused by a very fine uniformly dispersed initial nucleation, A model for growth in this mode which assumes a diffusion-limited process is derived and is seen to agree well with GaAs experimental data originally presented by Deitch. The work was supported by the Energy Research and Development Administration, Washington DC, under contract E(04-3)-1250.     

InP和InGaAsP晶体上衍射光栅的刻制技术

采用全息光刻的技术,在InP 和InGaAsP晶体上刻制亚微米衍射光栅,获得较好的重复性和均匀性,并已应用于研制长波长分布反馈激光器.     

Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays

Two types of GaAs/AlGaAs quantum dot arrays with different dot size are fabricated by dry etching and dry-wet etching. PL spectra of the quantum dot arrays at low temperature show the blue shifts due to the quantization confinement effects, and the blue-shift increases with the decrease of the dot size. It is also found that wet chemical etching can reduce the surface damage caused by high-energy ion etching and improve the optical characteristics of the quantum dot arrays.     

Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays

Ｌｏｗｄｉｍｅｎｓｉｏｎａｌｓｔｒｕｃｔｕｒｅｓ,ｓｕｃｈａｓｑｕａｎｔｕｍｗｅｌｌ（ＱＷ）,ｑｕａｎｔｕｍｗｉｒｅ（ＱＷＲ）ａｎｄｑｕａｎｔｕｍｄｏｔ（ＱＤ）ｈａｖｅａｔｔｒａｃｔｅｄｍｏｒｅａｎｄｍｏｒｅａｔｔｅｎｔｉ...     

用于垂直腔面发射激光器的GaAs/AlGaAs的ICP刻蚀工艺研究

采用电感耦合等离子体(ICP)刻蚀设备对应用于垂直腔面发射激光器的GaAs/AlGaAs材料进行刻蚀工艺研究。该刻蚀实验采用光刻胶作为刻蚀掩模,Cl2/BCl3作为刻蚀工艺气体,通过实验分析总结了ICP源功率、射频偏压功率和腔体压强对GaAs/AlGaAs材料和掩模刻蚀速率的影响。利用扫描电子显微镜观察不同参数条件对样品侧壁垂直度和底部平坦度的影响。最终在保证高刻蚀速率的前提下,通过调整优化各工艺参数,得到了侧壁光滑、底部平坦的圆台结构。     

InP quantum dots in (1 0 0) GaP: Growth and luminescence

We describe the growth and optical emission from strained InP quantum wells and quantum dots grown on GaP substrates using gas-source molecular beam epitaxy. Self-organized quantum dot formation takes place for InP coverage greater than 1.8 monolayers on the (1 0 0) GaP surface. Atomic force and scanning-electron microscopy studies indicate that unburied dots have a lateral size of 60–100 nm and are about 20 nm high, with dot densities in the range of 2–6×10⁸ cm⁻² for InP coverage between 1.9 and 5.8 MLs. Intense photoluminescence is emitted from both the quantum wells and the quantum dots at energies of about 2.2 and 2.0 eV, respectively. Time-resolved measurements indicate rather long carrier lifetimes of about 19 ns in the quantum wells and about 3 ns in the quantum dots. The data indicate that the InP/GaP quantum wells form a type-II band system, with electrons in the X valleys of the GaP recombine with holes in the InP. Furthermore, in the InP/GaP quantum dot system, the conduction band edge in the X valley of the GaP is nearly aligned with that in the Γ valley of the InP. Rapid thermal annealing of the quantum dots results in at least a six-fold enhancement of integrated emission intensity as well as some Ga-In interdiffusion. The low interdiffusion activation energy indicates that the material near the interface between the GaP matrix and the InP dots is not free of defects.     

InGaAsP／InP异质结构材料组分及结构的XPS测定

采用Ｘ射线光电子能谱（ＸＰＳ）对ＩｎＧａＡｓＰ／ＩｎＰ异质结构ＭＯＣＶＤ外延晶片作了表面薄层元素、组分定性、定量和深度分布分析。利用ＸＰＳ组分定量数据与带隙和组分量数据与晶体常数的经验公式计算带隙、晶格常数和失配率，并与光压谱（ＰＶＳ）测定的带隙值和Ｘ射线双晶衍射（ＤＣＤ）测定的失配率作了比较，比较结果是满意的。实验和分析表明，在研究ＭＯＣＶＤ外延膜材料表面组分和表面点阵结构方面。     

Elastic and plastic contributions to X-ray Line broadening of InGaAsP/InP Heterostructures

The coherency state of MOCVD grown InGaAsP/InP double-heterostructure wafers was examined and their effects on the structural properties were determined in this study. Lattice mismatches were measured using {511} asymmetric and (400) symmetric x-ray reflections. The chemical lattice misfit and the elastic strain were also calculated. Misfit dislocations were examined by both x-ray topography and photoluminescence imaging. The x-ray full width at half maximum (FWHM) varied with the degree of mismatch. The largest FWHM was obtained for samples containing the misfit dislocations. It was found that FWHM is influenced not only by the plastic deformation, but also by the elastic strain. To model the dependence of the FWHM, the radius of curvature was measured, and its contribution to the x-ray line broadening was calculated. Also, the contribution from misfit dislocations was taken into account. This model assumes that the dislocations are planar and interact weakly with each other. Good agreement between measured and calculated values was obtained. Thus, it is concluded that the major contribution to x-ray line broadening ofelastically strained sample is the lattice curvature induced by misfit strain, and that the dominant factor affecting x-ray FWHM ofplastically deformed sample is lattice relaxation induced by misfit dislocation.