Ferromagnetic superconductivity driven by changing Fermi surface topology

We introduce a simple but powerful zero temperature Stoner model to explain the unusual phase dia-gram of the ferromagnetic superconductor, UGe2. Triplet superconductivity is driven in the ferromagnetic phase by tuning the majority spin Fermi level through one of two peaks in the paramagnetic density of states (DOS). Each peak is associated with a metamagnetic jump in magnetization. The twin-peak DOS may be derived from a tight-binding, quasi-one-dimensional band structure, inspired by previous band-structure calculations.     

Local moments and magnetic ordering in transition metals

Stoner theory predicts a complete collapse of the local magnetic moment at the Curie temperature. In this paper, the effect of local moment formation in the non-magnetic state is discussed. The energy between the magnetic and non-magnetic state is found to be considerably reduced. This observation is consistent with the low observed magnetic ordering temperatures of the 3d metals when compared to the values derived from band theory.     

Hydrogen chemisorption on silicon (100) 2 × 1

Changes in the valence band density of states (DOS) of a (100) silicon surface that accompany he chemisorption of atomic hydrogen onto that surface are deduced from a study of the changes in the L_2,3VV Auger lineshape. Complementary changes in the conduction band DOS are inferred from changes in L_2,3VV-core-level characteristic loss spectra (CLS). The chemisorbed hydrogen layer is identified as the dihydride phase from low energy electron diffraction measurements. Upon hydrogen adsorption the DOS at the top of the valence band decreases and new energy levels associated with the Si-H bonds appear lower in the band. Assuming that the Auger signal from the hydrogen covered sample consists of a superposition of a signal from silicon atoms bonded to hydrogen in the dihydride layer and an elemental-Si signal from the substrate, a N(E) difference spectrum with features due only to the dihydride is obtained by subtracting the background corrected, loss deconvoluted L_2,3VV signal for a clean (100)Si surface rom the corresponding signal for the hydrogen covered surface. Comparisons of the energy position of the major peak in this difference spectrum with that of the main peak in a gas phase silane Si-L_2,3VV spectrum, and of the corresponding Auger energy calculated empirically, indicate a hole—hole interaction energy of ~8 eV for the two-hole final state in the gaseous system and zero for the dihydride surface system. Hydrogen induced changes in the conduction band DOS are less apparent than those of the valence band DOS with only the possibility of a decrease in the DOS at the bottom of the conduction band being inferred from the CLS measurements. Electron stimulated desorption of hydrogen from the dihydride layer is adduced from changes in the Auger lineshape under electron beam irradiation of the surface. Hydrogen induced changes in the near-elastic electron energy loss spectra (ELS) are also reported and compared with previously published ELS results.     

Electronic structure,spin polarization and high critical fields in Chevrel compounds

Results are presented of an extensive theoretical study of the origin of high field superconductivity and/or magnetism in a number of Chevrel phase ternary compounds, MMo₆X₈ (with M=Sn, Eu, Gd and X=S and/or Se) based on self-consistent linear muffin-tin orbital (LMTO) energy band calculations using the local density approach (Hedin et al. exchange correlation) for the paramagnetic structures and local spin density formalism (Gunnarsson and Lundqvist) for the ferromagnetic structures. All electrons and all 15 atoms/cell are included with the core electrons (including the 4f's) recalculated in each iteration in a fully relativistic representation and the conduction electrons treated semirelativistically (all relativistic terms except spin-orbit). Superconductivity is found to be due to the high Mo d-band density of states (DOS) at E_F resulting from the unusual large charge transfer of Mo electrons to the chalcogen sites. There is also a large charge transfer from the metal site to the cluster (≈2 electrons in Sn and Eu) giving essentially no occupied conduction bands, for example, at the Eu site and a divalent ion isomer shift in very good agreement with the experiments of Dunlap et al. The conduction-electron DOS at the Eu site is found to be reduced by an order of magnitude from its metallic state value - in close agreement with their spin - lattice relaxation rate measurements. This low conduction-electron DOS yields very weak coupling of the 4f electrons to the conduction electrons and only a very weak Ruderman-Kittel-Kasuya-Yosida magnetic interaction showing why all the Chevrel rare-earth compounds - except Ce and Eu - are superconducting despite their having large local magnetic moments. The unusually high upper critical fields, H_c2, in these materials is found to be due to the unusully flat energy bands near F_F. The ferromagnetic (spin polarized) results for the Eu- and Gd-compounds show a net small but positive magnetic moment on the metal site and a small but negative induced spin magnetic moment on the Mo site in the Eu compound. Fermi-contact contributions to the hyperfine field are calculated and found to be in good agreement with the Eu Mössbauer results and the negative NMR Knights shift results of Fradin et al. These results demonstrate theoretically for the first time the validity of the Fischer et al. and Fradin et al. conclusion that the Jaccarino-Peter mechanism is responsible for the large increase in the H_c2 when large concentrations of Eu magnetic impurities are substituted in SnMo₆S₈. Finally, calculated Stoner factors for the paramegnetic phase and spin magnetization densities for the ferromagnetic phase are used to discuss qualitatively the origin of the different behavior observed for GdMo₆S₈ and EuMo₆S₈.     

Two regimes in the magnetic field response of superconducting MgB<Subscript>2</Subscript>

Using Scanning Tunneling Microscope at low temperature we explore the superconducting phase diagram in the π-band of the two-band superconductor MgB₂. In this band the peculiar shape of the local tunneling spectra and their dynamics in the magnetic field reveal the complex character of the quasiparticle density of states (DOS). The gap in the DOS is first rapidly filled with states in raising the magnetic field up to 0.5 T and then slowly approaches the normal state value: the gap is observed up to 2 T. Such a change in the DOS dynamics suggests the existence of two terms in the DOS of the π-band: a first one, reflecting an intrinsic superconductivity in the band and a second one, originating from an inter-band coupling to the σ-band. Our findings allow a deeper understanding of the unique phase diagram of MgB₂.     

A discontinuous transition to ferromagnetic phase in a two-band itinerant ferromagnet

Conditions for the onset of ferromagnetism in a discontinuous way are given for a model system composed of a band and an atomic level located in the middle of the band. Such model reflects the system of two strongly hybridized bands of equal width. The presence of a linear term in the total magnetization for the ground state energy is demonstrated. At a discontinuous transition the Stoner criterion is not fulfilled [i.e. (U + J)?(μ) < 1]. Both mixed-valent and integral-valent ferromagnetic states are possible. The detailed calculations are done on the basis of rectangular density of states for the band electrons.     

Theory of spin-flip excitations across the ferromagnetic stoner gap in electron energy loss

We present calculations based on a simplified band model of the spin-flip cross section expected in electron energy loss in a ferromagnetic metal. It is shown how direct production of Stoner excitations can lead to observable features in both spin polarized and ordinary EELS spectra. A strong primary electron energy dependence is predicted for all these spin-flip features, in agreement with recent experiments.     

The initial oxidation of Cu(100) single crystal surfaces: an electron spectroscopic investigation

The total energy distribution of electrons emitted from clean Cu(100) and oxygen covered surfaces is analysed. A primary electron energy of 400 eV enabled the investigation of characteristic losses (ELS), Cu MVV Auger transitions and true secondary electrons in a single spectroscopic run. Oxygen exposure up to 10⁸ L at elevated temperature (~400 K) results in a Cu density of states (DOS) strongly affected by O(2p) electrons. The Auger lines of Cu, atomic-like for clean surfaces, reveal DOS effects after some 10⁷ L oxygen exposure: all MVV transitions shift down by ~2 eV in spite of a fixed M₂₃ level; the M₂₃VV Auger line splitting is vanishing due to a broadened valence band maximum allowing the deexcitation of the final two-hole state of intraatomic transitions. Heating the oxygen covered crystal to 820 K is accompanied by the removal of much surface oxygen and an electronic state resembling an earlier oxidation state without DOS effects in the Cu Auger spectrum.     

四角晶相HfO2(001)表面原子和电子结构研究

采用基于第一性原理的密度泛函理论研究了四角晶相二氧化铪(t-HfO₂)体相及 其(001)表面的原子几何与电子结构.理论计算结果表明，t-HfO₂(001)表面不会 产生重构现象.与体相电子结构相比, t-HfO₂(001)表面态密度明显高于体相态 密度.其次，表面原子的态密度更靠近费米能级(E_F)，价带往低能量处移动，并 有表面态产生.计算结果表明了t-HfO₂表面禁带宽度明显低于体相的禁带宽度. t-HfO₂(001)的表面态产生以及表面禁带宽度减小是由于Hf原子与O原子的配位 数减少，表面原子周围的环境发生变化而引起的. 关键词： 密度泛函理论 2(001)')" href="#">t-HfO₂(001) 表面电子结构     

强激光照射对2H-SiC晶体电子特性的影响

使用基于密度泛函微扰理论的第一原理赝势法, 计算了纤锌矿结构2H-SiC晶体在强激光照射下的电子特性, 分析了其能带结构和电子态分布. 计算结果表明: 2H-SiC平衡晶格参数a 和c随电子温度T_e的升高逐渐增大; 电子温度在0–2.25 eV范围内时, 2H-SiC仍然是间接带隙的半导体晶体, 当T_e超过2.25 eV达到2.5 eV以上时, 2H-SiC变为直接带隙的半导体晶体; 随着电子温度升高, 导带底和价带顶向高能量或低能量方向发生了移动, 当电子温度T_e大于3.5 eV以后, 价带顶穿越费米能级; 电子温度T_e在0–2.0 eV变化时, 带隙随电子温度升高而增大; T_e在2.0–3.5 eV范围变化时, 带隙随电子温度升高而快速地减少, 表明2H-SiC晶体的金属性随电子温度T_e的继续升高而增强. 在T_e =0, 5.0 eV 处, 计算了2H-SiC晶体总的电子态密度和分波态密度. 电子结构表明T_e =0 eV 时, 2H-SiC 是一个带隙为2.3 eV的半导体; 在T_e =5.0 eV时, 带隙已经消失而呈现出金属特性, 表明当电子温度升高时晶体的共价键变弱、金属键增强, 晶体经历了一个熔化过程, 过渡到金属状态.     

Electronic and magnetic properties of NdCrSb3: A first principles study

The electronic and magnetic properties of NdCrSb₃ are calculated by the first principles full-potential linearized augmented plane wave (FP-LAPW) method based on the density functional theory (DFT). Density of states (DOS), magnetic moments and band structures of the system are presented. For the exchange and correlation energy, local spin density approximation (LSDA+U) with the inclusion of Hubbard potential U is used. Our calculation shows that the 3d state electron of Cr and 4f state electrons of Nd contribute to the total DOS and the band structures. The effective magnetic moment is found to be 5.77μ_B, which is comparable to the earlier experimental results of NdCrSb₃.     

Magneto-electronic properties of the AA- and ABC-stacked graphites

In this study, we apply the tight-binding method to magneto-electronic properties of the AA- and ABC-stacked graphites, which are strongly dependent on the interlayer interactions, the magnetic field, and the stacking sequences. First of all, the interlayer interactions induce the significant changes in the energy dispersions, the band symmetry about the Fermi level, the overlap between valence and conduction bands, the band width, and the band-edge states or the symmetry points. Then, the magnetic field induces the Peierls phase in the Bloch functions and thus strongly affects the energy dispersions of the Landau Levels, the subband spacings, the energy width, and the special structures in density of states (DOS). Finally, the stacking sequences dominates over the low-energy band overlap and the anisotropy of energy bands. The effects mentioned above are exactly reflected in the density of state. Here, DOS exhibits the 3D, 2D, and 1D characteristics.     

The giant Stark effect in armchair-edge phosphorene nanoribbons under a transverse electric field

We study the variation of electronic properties for armchair-edge phosphorene nanoribbons (APNRs) modulated by a transverse electric field. Within the tight-binding model Hamiltonian, and by solving the differential Schrödinger equation, we find that a band gap closure appears at the critical field due to the giant Stark effect for an APNR. The gap closure has no field polarity, and the gap varies quadratically for small fields but becomes linear for larger ones. We attribute the giant Stark effect to the broken edge degeneracy, i.e., the charge redistributions of the conduction band minimum and valence band maximum states localized at opposite edges induced by the field. By combined with the Green's function approach, it is shown that in the presence of the critical field a gap of density of states (DOS) disappears and a high value DOS turns up at the energy position of the band gap closure. Finally, as the field increases, we find the band gap decreases more rapidly and the gap closure occurs at smaller fields for wider ribbons. Both the band gap and DOS variations with the field show an insulator-metal transition induced by a transverse electric field for the APNR. Our results show that wider APNRs are more appreciable to design field-effect transistors.     

第一性原理研究In,N共掺杂SnO2材料的光电性质

采用全电势线性缀加平面波(FP-LAPW)的方法,基于密度泛函理论第一性原理结合广义梯度近似(GGA),运用Wien2k软件计算了In, N两种元素共掺杂SnO₂材料的电子态密度和光学性质. 研究表明,共掺杂结构在自旋向下和向上两方向上都出现细的局域能级,两者态密度分布不对称;带隙内自旋向下方向上产生局域能级,共掺化合物表现出半金属性;能带结构显示两种共掺杂化合物仍为直接禁带半导体,价带顶随着N浓度的增加发生向低能方向移动,带隙明显增宽;共掺下的介电函数虚部主介电峰只在8.58 eV 关键词： 电子结构 态密度 能带结构 光学性质     

SrRuO3的电子结构与磁性研究

用自洽的全势能线性丸盒轨道能带方法计算了氧化物体系SrRuO₃(SRO)的电子结构和磁性.对于理想的立方钙钛矿结构的计算得出的电子结构明显改善了已有的计算结果:每个元胞的磁矩为129μ_B,按原子球划分为084μ_B/Ru原子和011μ_B/O原子;Sr原子上的自旋磁矩几乎为零;费米能级处的态密度N(E_F)为435(states/Ryd/f.u.).关于实际的正交结构SRO,计算得出磁矩为108μ关键词： 过渡金属氧化物 电子结构 磁性     

Theoretical studies on the electronic structure and magnetic properties of Cu(2,5-dmpz)Cl2

First-principles calculations have been performed to study the electronic structure, the metallic and magnetic properties of Cu(2,5-dmpz)Cl₂. The calculations are based on the density functional theory (DFT) with the generalized gradient approximation (GGA) and the full-potential-linearized-augmented plane wave (FPLAPW) method. The total energy, magnetic moment, density of states (DOS) and electronic band structure are calculated. The results reveal that the compound has a stable semiconductive antiferromagnetic (AFM) ground state and a semiconductive ferromagnetic (FM) metastable state, which is in good agreement with the experimental results. Based on the spin distribution and the DOS, it is found that the spin magnetic moment is mainly from the Cu²⁺, and with relative small contribution from Cl, N atoms.     

基于能带结构的布里渊区非均匀四面体网格生成技术

基于非局域赝势能带计算及四面体网格单元中能量满足线性关系,提出一种布里渊区非均匀四面体网格产生方法,在满足精度条件下能自动得出数目最少的四面体网格,使布里渊区积分计算的精度和效率大为提高．通过对硅、锗两种金刚石结构半导体简约布里渊区所产生网格的比较,表明该方法可以根据能带结构的特点自动生成优化的非均匀网格．对现有的态密度四面体计算公式进行了补充完善,并根据生成的网格和完善后的公式计算了硅和锗导带第一、二能带的态密度．     

The tunneling density-of-states of interacting massless Dirac fermions

We calculate the tunneling density-of-states (DOS) of a disorder-free two-dimensional interacting electron system with a massless-Dirac band Hamiltonian. The DOS exhibits two main features: (i) linear growth at large energies with a slope that is suppressed by quasiparticle velocity enhancement, and (ii) a rich structure of plasmaron peaks which appear at negative bias voltages in an n-doped sample and at positive bias voltages in a p-doped sample. We predict that the DOS at the Dirac point is non-zero even in the absence of disorder because of electron–electron interactions, and that it is then accurately proportional to the Fermi energy. The finite background DOS observed at the Dirac point of graphene sheets and topological insulator surfaces can therefore be an interaction effect rather than a disorder effect.     

Electronic structure and optical properties of In-doped SrTiO3 by density function theory

The effect of In doping on the electronic structure and optical properties of SrTiO3 is investigated by the first-principles calculation of plane wave ultra-soft pseudo-potential based on the density function theory （DFT）. The calculated results reveal that due to the hole doping, the Fermi level shifts into valence bands （VBs） for SrTi1-x InxO3 with x = 0.125 and the system exhibits p-type degenerate semiconductor features. It is suggested according to the density of states （DOS） of SrTi0.875In0.125O3 that the band structure of p-type SrTIO3 can be described by a rigid band model. At the same time, the DOS shifts towards high energies and the optical band gap is broadened. The wide band gap, small transition probability and weak absorption due to the low partial density of states （PDOS） of impurity in the Fermi level result in the optical transparency of the film. The optical transmittance of In doped SrTiO3 is higher than 85% in a visible region, and the transmittance improves greatly. And the cut-off wavelength shifts into a blue-light region with the increase of In doping concentration.     

VO_2晶体电子结构及其掺杂的第一性原理研究

运用密度泛函平面波赝势(PWP)和广义梯度近似(GGA)方法,对二氧化钒(VO2)两种不同晶体电子结构进行了计算.研究了低温单斜晶型和高温四方晶型结构的VO2电子态密度(DOS)和能带(energyband)结构,通过分析发现,四方晶的金属性比较明显,这是由于电子态密度和能带结构分析结果表明不同特性产生的原因是V原子的3d电子贡献不同导致的.本文中我们还将部分O原子替换为F原子后对单斜晶替位掺杂进行了的计算讨论,本文的计算结果都较好地符合实验结果,表明密度泛函平面波赝势和广义梯度近似方法可以用来描述VO2的结构和性质.我们认为,这种方法应用于描述氧化物的电子结构和性质是一种新的探索.