Determination of band gaps of self-assembled carbon nanotube films using Tauc/Davis–Mott model

The band gaps of self-assembled single-walled carbon nanotube (SWNT) films have been determined through curve fitting using the semi-empirical Tauc and Davis–Mott model, based on the measurement of optical absorption at the visible and near infrared range. This study provides a practicable option for the determination of band gaps for ultra-thin SWNT films or multi-walled carbon nanotube films whose vHs peaks cannot be well resolved in absorption spectra.     

Polymer saturable absorber materials in the 1.5 microm band using poly-methyl-methacrylate and polystyrene with single-wall carbon nanotubes and their application to a femtosecond laser

We report saturable absorber materials in the 1.5 microm band that consist of poly-methyl-methacrylate (PMMA) and polystyrene (PS) polymers with single-wall carbon nanotubes (SWNTs). A very uniform dispersion of SWNT in PMMA and PS polymers has been realized by using chlorobenzene or tetrahydrofuran as a dispersion solvent. These materials, which are as thick as 1 mm, are easily optically polished on both surfaces. This was difficult to achieve with previous thin-film materials. By incorporating PMMA/SWNT as a saturable absorber, a 171 fs pulse is successfully generated in a passively mode-locked fiber laser.     

Doping effects on metallic and semiconductor single-wall carbon nanotubes

In this paper we investigate nitrogen- and boron-doped zigzag and armchair single-wall carbon nanotubes (SWNTs) with theoretical models based on the density functional theory. We take into account nitrogen and boron doping for two isomers in which substitutive atoms are on opposite sides of the tube, but only in one isomer the impurity sites are symmetrical with respect to the diameter. The band structures show a strong hybridization with impurity orbitals that change the original band structure. Although the two isomers of armchair SWNT exhibit the same formation energy, their band structures are different. Indeed asymmetrical isomers are gapless and exhibit a crossing of valence and conduction bands at k?=?π/c, leading to metallic SWNTs. Band structures of symmetrical isomers, on the other hand, exhibit an energy gap of 0.4?eV between completely filled valence and empty conduction bands. We use density of charge in order to understand this difference. In zigzag SWNT an impurity band is introduced in the energy gap and for N doping this band is just partially occupied in such a way that the electronic behaviour is reversed from semiconductor to metallic. Whereas for a given isomer armchair SWNT shows similar behaviours of N- and B-doped structures, B-doped zigzag SWNTs present different band structure and occupation compared to the N-doped case.     

硫化锌纳米管稳定性、电子性质和磁性质的比较研究

用第一性原理方法系统地研究硫化锌纳米管的稳定性、电子性质和掺杂磁性质.比较三种纳米管的稳定性.研究表明,六边形截面的双壁管的稳定性最高,相同截面的单壁管稳定性次之,而圆截面的之字形和扶手椅纳米管稳定性最低.电子能带结构计算表明它们都是直接带隙半导体.纳米管表面氢吸附后,六边形截面的单壁管转变为间接带隙半导体.研究了磁性原子掺杂六边形截面管的磁性质.发现掺杂纳米管的形成能比纯纳米管的形成能低,说明掺杂过程是一个放热反应.纳米管的总磁矩等于掺杂的磁性原子的磁矩.这些单掺杂纳米管在可调磁的新材料方面有潜在的应用价值.     

Controlling growth and Raman spectra of individual suspended single-walled carbon nanotubes

Single-walled carbon nanotubes (SWNTs) were prepared with ethanol chemical vapor deposition (CVD) on SiO₂ flat and pillar-patterned Si substrates. The effect of CVD temperatures from 600 to 800 °C on SWNTs yields was investigated. By virtue of its unperturbed environment, an individual suspended SWNT grown between two different SiO₂ pillars provides a possibility to study the phonon band structure of SWNT itself at a single-nanotube level. Raman spectra of individual SWNTs grown between pillars were investigated systematically.     

Visible and near-infrared excited-state dynamics of single-walled carbon nanotubes

Excited-state lifetimes of isolated single-walled semiconducting carbon nanotubes (SWNTs) have been measured for the first time; these excited states, observed over the 400- to 1800-nm spectral domain, possess lifetimes that range from several ps to more than 100 ps. Sub-ps to ps decay components are assigned to relaxation in SWNT bundles. Interrogation of the samples with different SWNT mean diameters further confirms the dependence of the excited-state lifetime on roll-up vector. The ratio of fast and slow decaying component contributions in the first van Hove band can be viewed as a measure of the bundle content. PACS 78.67.Ch; 78.47.+p; 61.46.+w; 73.22.-f     

Fluorescence spectroscopy of single-walled carbon nanotubes in aqueous suspension

Optical studies of single-walled carbon nanotubes have advanced greatly through the recent discovery of near-infrared band gap photoluminescence from single-walled carbon nanotubes (SWNT) isolated in aqueous surfactant suspensions. This fluorescence emission has enabled the detection of many distinct optical transitions and their assignment to specific (n,m) semiconducting species of SWNT. The resulting set of precise transition energies presents a challenge to current theoretical models of nanotube electronic structure and a guide to nanotube researchers using resonance Raman spectroscopy. In the near future, structure-resolved fluorimetry should prove useful for revealing the quantitative (n,m) composition of mixed SWNT samples through sensitive, rapid, and nondestructive measurements. It will also permit detailed studies of many physical and chemical processes that vary with nanotube structure. PACS 71.35.Cc; 78.67.Ch; 78.67.-n     

热效应对纳米焊接界面结构的影响

采用分子动力学方法深入研究热效应对纳米焊接界面结构的影响。具体分析了碳管直径和时间的变化对界面结构的影响规律,并详细给出了1530 K下的焊接过程。结果表明,除碳管(5,5)外,碳管(6,6),(7,7),(9,9),(11,11)中纳米线形成的时间分别为13.8, 14.6, 17.5, 19.6 ps。纳米线是由单根或多根Ni原子链组成,碳管(6,6),(7,7),(9,9),(11,11)中Ni原子链数分别为1,3,7和16。界面结构包括内部焊接和外部焊接。内部焊接的临界直径由碳管(6,6)决定,其值为0.814 nm。在同一时刻,大直径的碳管可获得更大的外部接触长度。外部接触长度的增长速率随碳管直径的增加而增大,接触长度的最大增长速率可达0.013 nm/ps。最后确定了界面结构形成临界温度,发现对于相同直径碳管,外部焊接的临界温度高于内部焊接的临界温度,临界温度与碳管直径无关。     

Magnetoadsorptive Particles Enabling the Centrifugation‐Free,Preparative‐Scale Separation,and Sorting of Single‐Walled Carbon Nanotubes

A novel magnetic composition of the high surface area particles with amide chemical functionality, Sephacryl S‐200, is reported enabling the preparative‐scale (1 L, ≈5–10 mg) separation of metallic and semiconducting single‐walled carbon nanotubes (SWNT) from completely unpurified and uncentrifuged nanotube stocks. Sephacryl S‐200 has previously been utilized in separating semiconducting SWNT (s‐SWNT) on the laboratory scale. Significantly, use of these magnetic derivative particles in absorptive separation of SWNT allows the unprecedented and industrially scalable purification of both metallic SWNT (m‐SWNT) as well as s‐SWNT directly from uncentrifuged, ultrasonicated surfactant‐based SWNT solutions by simple and scalable magnetic separation. These particles also allowed for the systematic study on the effect of SWNT–polymer interaction time on the resulting SWNT “payloads.” Ultimately, high ‐purity m‐SWNT and s‐SWNT products are independently achieved by controlling the SWNT–polymer interaction time and relative concentrations, as well as SWNT sonication conditions. Furthermore, by controlling these factors, single‐chirality (6,5) s‐SWNT can be isolated with 92% purity directly from unpurified stocks. Thermogravimetric analysis indicates a total process SWNT yield of 1.2% and 1.7% for m‐SWNT and s‐SWNT, respectively. These results demonstrate the potential for a preparative method for separating carbon nanotubes based on electronic properties.     

First-principles studies on stabilities and electronic properties of AlN nanostructures

Under the generalized gradient approximation (GGA), the stabilities and electronic properties of semiconductor AlN nanostructures have been investigated by using the first-principles projector-augmented wave (PAW) potential within the density function theory (DFT) framework. The single-walled faceted AlNNTs present an obvious structural modification. The larger the diameter, the more stable the nanowire, and the wires without internal surfaces are more stable than the multiwalled tubes or the SWNT. Therefore, the large-size nanowires are easier to be synthesized than the corresponding multiwalled tubes or single-walled nanotube in experiment. The dangling bonds of surface atoms cause the “localized edge-induced states”. These two nanostructures C and F are still wide band gap semiconductors accompanied by a few surface states located in the band gap of bulk AlN and thus extremely suitable for application in flexible pulse wave sensors, nanomechanical resonators and light-emitting diodes.     

Resonance Raman spectra of carbon nanotubes by cross-polarized light

Resonance Raman studies on single wall carbon nanotubes (SWNTs) show that resonance with cross polarized light, i.e., with the E(mu,mu+/-1) van Hove singularities in the joint density of states needs to be taken into account when analyzing the Raman and optical absorption spectra from isolated SWNTs. This study is performed by analyzing the polarization, laser energy, and diameter dependence of two Raman features, the tangential modes (G band) and a second-order mode (G' band), at the isolated SWNT level.     

钯金属吸附对半导体性碳纳米管电输运的影响

利用物理蒸发技术,在半导体性的碳纳米管上沉积钯金属,利用导电原子力显微镜检测钯吸附对碳纳米管电输运的影响.结果表明:沉积的钯在碳纳米管上形成纳米颗粒,随着钯颗粒密度的增加,半导体性碳纳米管逐渐向金属性转变.利用第一性原理计算了吸附有钯原子的半导体性单壁碳纳米管的能带结构.研究发现,钯的覆盖率越高,其禁带宽度越窄,直至为零,定性说明了实验结果的合理性. 关键词： 单壁碳纳米管 钯纳米颗粒 导电原子力显微镜 第一性原理计算     

On the iron-catalysed growth of single-walled carbon nanotubes and encapsulated metal particles in the gas phase

The production of single-walled carbon nanotubes (SWNT) by catalytic disproportionation of carbon monoxide on iron particles in the gas phase was studied. The addition of hydrogen to the reactants was found to increase the SWNT yield relative to the competing formation of encapsulated iron particles. Adding acetylene, however, did not result in a significant change of the SWNT growth but gave rise to the formation of unwanted self-pyrolysis products. Iron particles are seen to decorate the SWNT and are shown to be single crystalline with several layers of encapsulation by graphitic carbon. All these observations are discussed with respect to the catalytic growth mechanism of SWNT and encapsulated metal particles from CO and hydrocarbon molecules.     

Carbon nanotubes adhesion and nanomechanical behavior from peeling force spectroscopy

Applications based on single walled carbon nanotube (SWNT) are good example of the great need to continuously develop metrology methods in the field of nanotechnology. Contact and interface properties are key parameters that determine the efficiency of SWNT functionalized nanomaterials and nanodevices. In this work we have taken advantage of a good control of the SWNT growth processes at an atomic force microscope (AFM) tip apex and the use of a low noise (10⁻¹³ m/√Hz) AFM to investigate the mechanical behavior of a SWNT touching a surface. By simultaneously recording static and dynamic properties of SWNT, we show that the contact corresponds to a peeling geometry, and extract quantities such as adhesion energy per unit length, curvature and bending rigidity of the nanotube. A complete picture of the local shape of the SWNT and its mechanical behavior is provided.     

Polarized raman study of single-wall semiconducting carbon nanotubes

Polarized Raman spectra were obtained from a rope of aligned semiconducting single-wall nanotubes (SWNTs) in the vicinity of the D band and the G band. Based on group theory analysis and related theoretical predictions, the G-band profile was deconvolved into four intrinsic SWNT components with the following symmetry assignments: 1549 cm(-1) [E2(E(2g))], 1567 cm(-1) [A(A(1g))+E1(E(1g))], 1590 cm(-1) [A(A(1g))+E1(E(1g))] and 1607 cm(-1) [E2(E(2g))]. The frequency shifts of the tangential G modes from the 2D graphitelike E(2g(2)) frequency are discussed in terms of the nanotube geometry.     

Static dielectric properties of carbon nanotubes from first principles

We characterize the response of isolated single-wall (SWNT) and multiwall (MWNT) carbon nanotubes and nanotube bundles to static electric fields using first-principles calculations and density-functional theory. The longitudinal polarizability of SWNTs scales as the inverse square of the band gap, while in MWNTs and bundles it is given by the sum of the polarizabilities of the constituent tubes. The transverse polarizability of SWNTs is insensitive to band gaps and chiralities and is proportional to the square of the effective radius; in MWNTs, the outer layers dominate the response. The transverse response is intermediate between metallic and insulating, and a simple electrostatic model based on a scale-invariance relation captures accurately the first-principles results. The dielectric response of nonchiral SWNTs in both directions remains linear up to very high values of applied field.     

Selection of isolated and individual single-walled carbon nanotube from a film and its usage in nanodevices

Individual and isolated single-walled carbon nanotubes (SWNTs) are important for fabricating relevant nanode- vices and studying the properties of the SWNT devices. In this work, we demonstrate that individual and isolated SWNT can be selected and obtained from a film containing a huge number of SWNTs. By using both the polymethyl-methacrylate (PMMA) as a negative resist and the electron beam lithography, the selected SWNT can be fixed on a substrate, while the other SWNTs in the film can lift off. The selected SWNT can be used to fabricate nanodevice and a gas sensor of oxygen is demonstrated in this work.     

Gases Do not adsorb on the interstitial channels of closed-ended single-walled carbon nanotube bundles

We have experimentally determined the binding energies of Xe, CH4, and Ne on samples of closed-ended single-wall nanotube (SWNT) bundles. We find values for these quantities which are larger by approximately 75% on the SWNT samples than the values found for the same adsorbates on planar graphite. We have also determined the monolayer capacity of a SWNT sample using Xe and Ne adsorption. A comparison of all of our results leads us to conclude that none of the gases studied adsorb on the interstitial channels in the SWNT bundles.     

Biophysical and electrochemical properties of Self-assembled noncovalent SWNT/DNA hybrid and electroactive nanostructure

DNA self-assembled hybrid nanostructures are widely used in recent research in nanobiotechnology. Combination of DNA with carbon based nanoparticles such as single-walled carbon nanotube (SWNT), multi-walled carbon nanotube (MWNT) and carbon quantum dot were applied in important biological applications. Many examples of biosensors, nanowires and nanoelectronic devices, nanomachine and drug delivery systems are fabricated by these hybrid nanostructures. In this study, a new hybrid nanostructure has been fabricated by noncovalent interactions between single or double stranded DNA and SWNT nanoparticles and biophysical properties of these structures were studied comparatively. Biophysical properties of hybrid nanostructures studied by circular dichroism, UV–vis and fluorescence spectroscopy techniques. Also, electrochemical properties studied by cyclic voltammetry, linear sweep voltammetry, square wave voltammetry, choronoamperometry and impedance spectroscopy (EIS). Results revealed that the biophysical and electrochemical properties of SWNT/DNA hybrid nanostructures were different compare to ss-DNA, ds-DNA and SWNT singly. Circular dichroism results showed that ss-DNA wrapped around the nanotubes through π-π stacking interactions. The results indicated that after adding SWNT to ss-DNA and ds-DNA intensity of CD and UV–vis spectrum peaks were decreased. Electrochemical experiments indicated that the modification of single-walled carbon nanotubes by ss-DNA improves the electron transfer rate of hybrid nanostructures. It was demonstrated SWNT/DNA hybrid nanostructures should be a good electroactive nanostructure that can be used for electrochemical detection or sensing.     

Large scale highly organized single-walled carbon nanotube networks for electrical devices

Large-scale room-temperature liquid-phase directed assembly of highly organized single-walled carbon nanotubes (SWNT) over large areas is demonstrated. The presented process utilizes lithographically patterned template to guide the fluidic self-assembly of SWNTs on a silicon-dioxide substrate. The width of these highly organized SWNT structures are in the micron range while their heights are in orders of nanometers. Room temperature electrical I–V characterization of these fabricated high coverage SWNT wires show linear ohmic behavior. The resistivity of these assembled SWNT network is in the order of 10⁻⁶ Ω m demonstrating their metallic characteristics during conductance. Scaling of the assembly processes on a wafer level with high yield is demonstrated. Our developed assembly process is compatible with complimentary metal oxide semiconductor (CMOS) processes and provides a simple and flexible way of building SWNT nanotube-based electronics in a large scale.