Chiral vectors-tunable electronic property of MoS2 nanotubes

It has been demonstrated that the mechanical and electronic properties of materials change significantly when the external dimension are confined to the nanoscale. Consequently, one-dimensional (1D) transition-metal dichalcogenide (TMDC) nanotubes (NTs), obtained from scrolling 2D TMDC, have attracted much attentions because of their intriguing properties and the chirality plays a key role in affecting the electronic properties. Taking the amount of speculations on the mechanism and the increasing needs for better device design and performance control, understanding the effect of chirality on the electronic properties is timely and relevant. Here, MoS₂ NTs are comprehensively studied by first-principles calculations. The results show that the armchair (6≤ch≤14) exhibits the indirect-band-gap and zigzag (10≤ch≤20) with direct-band-gap. Moreover, the carrier mobility is enhanced with the decrease of radial length, in accord with the smaller effective mass of hole and electron for both types NTs. Finally, the formation energy showed that the smaller the radial diameters is, the harder the NTs is to form. Moreover, the similarity of lattice parameters and formation energy implies a potential possibility of transition between two types of NTs with low index chiral vectors, such as ANT(6,6)/ZNT(10,0).     

Chiral vectors-tunable electronic property of MoS2 nanotubes

It has been demonstrated that the mechanical and electronic properties of materials change significantly when the external dimension are confined to the nanoscale. Consequently, one-dimensional (1D) transition-metal dichalcogenide (TMDC) nanotubes (NTs), obtained from scrolling two-dimensional (2D) TMDC, have attracted much attentions because of their intriguing properties wherein the chirality of NTs plays a key role in affecting the electronic properties. Taking into the amount of speculations on the mechanism and the increasing needs for better device design and performance control, understanding the effect of chirality on the electronic properties is timely and relevant. Here, MoS₂ NTs are comprehensively studied by first-principles calculations. The results show that the armchair (6≤ch≤14) exhibits the indirect-band-gap and zigzag (10≤ch≤20) with direct-band-gap. Moreover, the carrier mobility is enhanced with the decrease of radial length, in accord with the smaller effective mass of hole and electron for both types NTs. Finally, the formation energy showed that the smaller the radial diameters is, the harder the NTs is to form. Moreover, the similarity of lattice parameters and formation energy implies a potential possibility of transition between two types of NTs with low index chiral vectors, such as ANT(6,6)/ZNT(10,0).     

Structure and electronic properties of the double-wall nanotubes constructed from SiO2 nanotubes encapsulated inside zigzag carbon nanotubes

This paper presents ab initio self-consistent field crystal orbital calculations on the structures, stabilities, elastic and electronic properties of the double-wall nanotubes made of SiO(2) nanotubes encapsulated inside zigzag carbon nanotubes based on density functional theory. It is found that formation of the combined systems is energetically favorable when the nearest distance between the two constituents is in the area of the van der Waals effect. The obtained band structures show that all the combined systems are semiconductors with nonzero energy gaps. Based on the deformation potential theory and effective mass approximation, the mobilities of charge carriers are calculated to be in the range of 10(2)-10(4) cm(2) V(-1) s(-1), the same order of magnitude as those of the corresponding zigzag carbon nanotubes. The Young's moduli are also calculated for the combined systems.     

TiO2纳米管的力学和电子学性质

基于密度泛函理论研究了纤铁矿和锐钛矿型TiO₂纳米管的原子结构、稳定性、Young模量以及电子能带结构.计算结果显示：在纳米管直径较小时,锐钛矿型TiO₂纳米管的稳定性要好于纤铁矿型纳米管,随着管径的增大,纤铁矿型纳米管变得比锐钛矿型纳米管要更稳定.纤铁矿型TiO₂纳米管具有比锐钛矿型纳米管更大的Young模量,力学性能比较优异.另外,通过对电子能带结构的研究发现,手性对TiO₂纳米管的电子结构影响较大,纤铁矿（0,n）型和锐钛矿（n,0）型纳米管为间接带隙半导体,而纤铁矿（n,0）型和锐钛矿（0,n）型纳米管却具有直接带隙. 关键词： 2纳米管')" href="#">TiO₂纳米管 Young模量 间接带隙 直接带隙     

Structure and electronic properties of native and defected gallium nitride nanotubes

Structure and electronic properties of GaN nanotubes (GaNNTs) are investigated by using ab initio density functional theory. By full optimization, the optimized structures (bond-lengths and angles between them) of zigzag GaNNTs (n,0) and armchair GaNNTs (n,n) (4<n<11) are calculated. The difference between nitrogen ring diameter and gallium ring diameter (buckling distance) and semiconducting energy gap in term of diameter for zigzag and armchair GaNNTs have also been calculated. We found that buckling distance decreases by increasing nanotube diameter. Furthermore, we have investigated the effects of nitrogen and gallium vacancies on structure and electronic properties of zigzag GaNNT (5,0) using spin dependent density functional theory. By calculating the formation energy, we found that N vacancy in GaNNT (5,0) is more favorable than Ga vacancy. The nitrogen vacancy in zigzag GaNNT induces a 1.0μB magnetization and makes a polarized structure. We have shown that in polarized GaNNT a flat band near the Fermi energy splits to occupied spin up and unoccupied spin down levels.     

New class of non-carbon AlP nanotubes: Structure and electronic properties

A new class of non-carbon nanotubes based on Group III and Group V elements (aluminum and phosphorus, respectively) is considered. The equilibrium geometry, energy characteristics, and electronic structure of the AlP nanotubes were calculated using the density functional theory. These calculations demonstrated that the AlP nanotubes are energetically stable structures. It was found that a low strain energy (approximately 0.01–0.07 eV) is required for rolling a two-dimensional hexagonal AlP structure into a tube. The AlP nanotubes are found to be wide-band-gap semiconductors with a band gap of 2.05–3.73 eV with direct (for the zigzag type) or indirect (for the armchair type) transitions between the top of the valence band and the bottom of the conduction band. The band gap of these nanotubes increases with the tube diameter, approaching the band gap of a two-dimensional hexagonal AlP layer.     

Chirality effect of mechanical and electronic properties of monolayer MoS2 with vacancies

We present first principles theory calculations about the chirality and vacancy effects of the mechanical and electronic properties of monolayer MoS₂. In the uni-axial tensile tests, chirality effect of the mechanical properties is negligible at zero strain and becomes significant with the increasing strain, regardless of vacancies. The existence of vacancies decreases the Young's modulus and ultimate strength of the MoS₂ structure. During the uni-axial tensile tests, the band gap decreases with the increasing strain, regardless of chirality and vacancies. The band gap is reduced with the intermediate state brought by the existence of vacancies. No chirality effect can be observed on the band gap variations of perfect MoS₂. Chirality effect appears to the band gap variation of defected MoS₂ due to the local lattice relaxation near the vacancies.     

Unusual magnetic state in lithium-doped MoS2 nanotubes

We report on the very peculiar magnetic properties of an ensemble of very weakly coupled lithium-doped MoS2 nanotubes. The magnetic susceptibility chi of the system is nearly 3 orders of magnitude greater than in typical Pauli metals, yet there is no evidence for any instability which would alleviate this highly frustrated state. Instead, the material exhibits peculiar paramagnetic stability down to very low temperatures, with no evidence of a quantum critical point as T-->0 in spite of clear evidence for strongly correlated electron behavior. The exceptionally weak intertube interactions appear to lead to a realization of a near-ideal one-dimensional state in which fluctuations prevent the system from reordering magnetically or structurally.     

Structure and properties of BeO nanotubes

The structure of a new non-carbon (beryllium oxide BeO) nanotube consisting of a rolled-up graphene sheet is proposed, and its physical properties are described. Ab initio calculations of the binding energy, the electronic band structure, the density of states, the dependence of the strain energy of the nanotube on the nanotube diameter D, and the Young’s modulus Y for BeO nanotubes of different diameters are performed in the framework of the density functional theory (DFT). From a comparison of the binding energies calculated for BeO nanotubes and crystalline BeO with a wurtzite structure, it is inferred that BeO nanotubes can be synthesized by a plasma-chemical reaction or through chemical vapor deposition. It is established that BeO nanotubes are polar dielectrics with a band gap of ～5.0 eV and a stiffness comparable to that of the carbon nanotubes (the Young’s modulus of the BeO nanotubes Y _BeO is approximately equal to 0.7Y _C, where Y _C is the Young’s modulus of the carbon nanotubes). It is shown that, for a nanotube diameter D > 1 nm, the (n, n) armchair nanotubes are energetically more favorable than the (n, 0) zigzag nanotubes.     

Theoretical study of thermoelectric properties of MoS2Theoretical study of thermoelectric properties of MoS2Theoretical study of thermoelectric properties of MoS2

We systematically studied the thermoelectric properties of MoS2 with doping based on the Boltzmann transport theory and first-principles calculations. We obtained an optimal doping region （around 1019 cm-3） for thermoelectric properties along in-plane and cross-plane directions. MoS2 in the optimal doping region has a vanishingly small anisotropy of ther- mopower possibly due to the decoupling of in-plane and cross-plane conduction channels, but big anisotropies of electrical conductivity cr and electronic thermal conductivity ke arising from the anisotropic electronic scattering time. The ~ is comparable to the lattice counterpart k1 in the plane, while tq dominates over tee across the plane, The figure of merit ZT can reach 0.1 at around 700 K with in-plane direction preferred by doping.     

拓扑相MoS2电子结构及光学性质的第一性原理研究

基于密度泛函理论的第一性原理对二维拓扑相1T′-MoS₂和2M-MoS₂的电子结构、有效质量和光学性质进行研究,并将其与二维H-MoS₂进行对比分析.研究表明,电子有效质量大小关系为：2M-MoS₂22,空穴有效质量大小关系为：T′-MoS₂<2M-MoS₂2,但2M-MoS₂的空穴有效质量和T′-MoS₂相差不大,二者均适用于高性能电子器件.由于拓扑相1T′-MoS₂和2M-MoS₂均存在能带反转,导致带间相关性以及导带和价带的波函数重叠增强,进而光电流响应增强,二者的光学性质均优于H-MoS₂. 2M-MoS₂具有较大的吸收系数和光电导率,2M-MoS₂对红外光和紫外光有着优...     

Structural and electronic properties of sulphur-doped boron nitride nanotubes

First-principles calculations based on density functional theory were performed to study the structural and electronic properties of sulphur substitution-doped boron nitride (BN) nanotubes, using the theory as implemented in SIESTA code, which uses non-conserving pseudo-potentials in fully non-local form and atomic orbitals as the basis set. The generalized gradient approximation (GGA) was used for the exchange–correlation (XC) potential. The tube selected was a (10, 0) BN nanotube that fell in the range of energy gap independent of the tube diameter. The electronic and structural properties for sulphur substitution in the boron and the nitrogen sites were studied. The structural arrangement in equilibrium conditions for S shows an outward radial deformation around the sulphur atom in the tube. The bandgap of the pristine BN nanotubes was found to be significantly modified on doping.     

Theoretically exploring the possible configurations,the electronic and transport properties of MoS2-OH bilayer

Inspired by MoS₂-OH bilayer framework (Zhu et al. 2019 [19]), first principles calculations are applied to explore its possible configurations as well as their electronic and transport properties. The calculated results indicate O-MoS₂ and OH…O-MoS₂ are two primary configuration in MoS₂-OH bilayer. It shows negligible difference in electronic structure between O-MoS₂ and pure MoS₂, but a flat band arise at the Fermi level in OH…O-MoS₂. Their contact characteristics show larger binding energy with selected metals and smaller contact barrier with Pt electrode. Besides, the currents of both O-MoS₂ and OH…O-MoS₂ are enlarged compared with that of pure MoS₂ in finite bias, indicating MoS₂-OH bilayer may be potential candidate for future electron device applications.     

锯齿型碳纳米管的结构衍生及电子特性

利用密度泛函理论研究锯齿型单、双壁碳纳米管从核到管状团簇直至纳米管的逐层结构衍生.研究结果表明五边形结构在管状团簇生长中发挥关键作用.此外,基于管状团簇的研究,运用周期性边界条件得到锯齿型单、双壁碳纳米管,并通过计算能带和态密度研究其电子特性.对单壁(n,0)和双壁(n,0)@(2n,0)碳纳米管,当n=3q(q为整数)时,具有金属或窄带隙半导体特性;n?=3q时,具有较宽带隙半导体特性,且带隙随管径的增加而减小.然而,小管径碳纳米管受曲率效应的明显影响,n?=3q的(4,0),(4,0)@(8,0)和(5,0)@(10,0)均呈现金属性;n=3q的(6,0)@(12,0)则表现出明显的半导体特性.     

Structural and electronic properties of chiral single-wall copper nanotubes

The structural,energetic and electronic properties of chiral(n,m)(3≤n≤6,n/2≤m≤n)single-wall copper nanotubes(CuNTs)have been investigated by using projector-augmented wave method based on density-functional theory.The(4,3)CuNT is energetically stable and should be observed experimentally in both free-standing and tip-suspended conditions,whereas the(5,5)and(6,4)CuNTs should be observed in free-standing and tip-suspended conditions,respectively.The number of conductance channels in the CuNTs does not always correspond to the number of atomic strands comprising the nanotube.Charge density contours show that there is an enhanced interatomic interaction in CuNTs compared with Cu bulk.Current transporting states display different periods and chirality,the combined effects of which lead to weaker chiral currents on CuNTs.     

单层MoS_2表面吸附Ag_6团簇电子结构的第一性原理计算

本文运用第一性原理研究了单层MoS_2在S位吸附Ag_6团簇的稳定性、能带结构和态密度.结果表明,Ag_6团簇在S位单点位吸附的稳定性强于双点位吸附、三点位吸附;其中吸附体系禁带中产生了2条杂质能级,原因在于Ag原子与S形成共价键下的施主能级与受主能级;Ag_6团簇在单层MoS_2的吸附导致态密度峰值在费米能级处发生劈裂,说明Ag_6团簇的吸附会增强单层MoS_2的光电特性;单层MoS_2的能带结构可以通过表面吸附Ag_6团簇以及金属团簇进行调控;在实际的生产应用中依据不同的金属团簇吸附于单层MoS_2表面得到需要的的半导体器件.     

Structural and electronic properties of composite BxCyNz nanotubes and heterojunctions

x C_yN_z nanotubes and related heterojunctions have been studied using both ab initio and semi-empirical approaches. Pure BN nanotubes present a very stable quasiparticle band gap around 5.5–6.0 eV independent of the tube radius and helicity. The bottom of the conduction bands is controlled by a nearly-free-electronn state localized inside the nanotube, suggesting interesting properties under doping. In the case of nanotubes with BC₂N stoichiometry, we show that in the thermodynamic limit the system is driven towards segregation of pure C and BN sections. This demixing significantly affects the electronic properties of such materials. The same process of segregation into BC₃ islands is evidenced in the case of B-doped carbon nanotubes. These spontaneous segregation processes lead to the formation of quantum dots or nanotube heterojunctions. In particular, C/BN superlattices or isolated junctions have been investigated as specific examples of the wide variety of electronic devices that can be realized using such nanotubes. Received: 27 November 1998 / Accepted: 14 December 1998     

First-principle study on the structural and electronic properties of H2S and SO2 adsorption on Pd-doped MoS2 monolayer

The partial discharge in SF₆-insulated equipment produces characteristic decomposition products: SO₂ and H₂S. The characteristic decomposition products vastly speed up the process of discharge faults. Based on density functional theory (DFT) calculation, single layer Pd-doped MoS₂ (Pd-MoS₂) is adopted as the adsorbent to adsorb SO₂ and H₂S to ensure the operational stability of SF₆-insulated equipment. The adsorption energy, charge transfer and structure parameters of SF₆, H₂S, and SO₂ adsorption on the Pd-MoS₂ monolayer are analysed to find the most stable adsorption structure. The molecular orbital theory, total density of states and partial density of states are studied to analyse the adsorption mechanism. The results show that Pd-MoS₂ adsorbent possesses high catalytic activity and excellent adsorption performance to H₂S and SO₂ by strong chemical adsorption. This study is of great significance to ensure the operational stability of SF6-insulated equipment by removing these characteristic decomposition products.     

P掺杂硅纳米管电子结构与光学性质的研究

采用基于密度泛函理论的第一性原理计算,研究了P掺杂对单壁扶手型硅纳米管电子结构和光学性质的影响.结果表明:经过P掺杂,单壁扶手型硅纳米管的能带结构从间接带隙变为直接带隙,其价带顶主要由Si-3p态电子构成,导带底主要由Si-3p态电子和Si-3s态电子共同决定;同时通过P掺杂,使单壁扶手型硅纳米管的禁带宽度变窄,导电性增强,吸收光谱产生红移.研究结果为硅纳米管在光电器件方面的应用提供了理论基础.