Neural network approach to diffusion of B and N adatoms on the Pt(111) surface

Artificial neural network boasts an outstanding class in terms of its performance and efficiency and is being spread widely in most fields of physics. We report our investigation of the diffusions of boron and nitrogen adatoms on the Pt(111) surface by performing molecular dynamics simulations equipped with machine-learned potentials. Platinum is commonly used as a substrate for the growth of hexagonal boron nitride (h-BN) thin films, and the diffusion of B and N atoms on the substrate, which are decomposed from the precursor molecules, plays important roles in the initial stages of h-BN growth. The two-dimensional potential energy surfaces and the trajectories of the B and N adatoms are consistent with the DFT calculation. The Arrhenius plots of the diffusion coefficients produce the diffusion barriers of the B and N adatoms on Pt(111), which agree well with the DFT barriers.     

Electronic stabilization of the Si(111)5 × 2-Au surface: Pb and Si adatoms

Using scanning tunneling microscopy/spectroscopy (STM/STS), angle resolved photoemission spectroscopy (ARPES) and first-principles density functional theory (DFT), we study the structural and the electronic properties of the Si(111)5 × 2-Au surface decorated with Pb adatoms. The STM topography data reveal that Pb adatoms form a similar superstructure to that observed in the case of Si adatoms on a bare Si(111)5 × 2-Au surface. The DFT calculations show that preferential adsorption sites of Pb atoms are located near the double Au chain. Bias dependent STM topography and spectroscopy together with the DFT calculations allow us to distinguish Pb from Si adatoms. Both the Si and Pb adatoms modify the electronic properties in the same way, which confirms the electronic origin of the stabilization of the surface.     

The structure of methoxy species on Cu(110): A combined photoelectron diffraction and density functional theory determination

The local structure of the methoxy species on Cu(110) has been investigated experimentally using chemical-state specific O 1s scanned-energy mode photoelectron diffraction (PhD), and also by density functional theory (DFT) calculations. The PhD data show a clear preference for adsorption with the O bonding atoms in short-bridge sites, though the best fit of multiple-scattering simulations to the experimental data is achieved with two slightly different short-bridge geometries. The DFT calculations also show that not only are the short-bridge sites energetically favoured in isolation, but that coordination to pairs of Cu adatoms has a similar energy. A structure consistent with both the PhD data and the DFT calculations is proposed for the previously-observed (5 × 2)pg ordered phase, based on methoxy species in short-bridge sites on pairs of Cu adatoms and on the underlying surface. Simulated scanning tunnelling microscopy images agree well with those observed experimentally, while the model is also shown to be consistent with the qualitative behaviour seen in early X-ray photoelectron diffraction (XPD) forward-scattering experiments.     

Structure determination of the Si3N4/Si(111)- (8 x 8) surface: a combined study of Kikuchi electron holography, scanning tunneling microscopy, and ab initio calculations

A comprehensive atomic model for the reconstructed surface of Si3N4 thin layer grown on Si(111) is presented. Kikuchi electron holography images clearly show the existence of adatoms on the Si3N4(0001)/Si(111)-(8x8) surface. Compared with the ab initio calculations, more than 30 symmetry-inequivalent atomic pairs in the outmost layers are successfully identified. Scanning tunneling microscopy (STM) images show diamond-shaped unit cells and nine adatoms in each cell. High-resolution STM images reveal extra features and are in good agreement with the partial charge density distribution obtained from total-energy calculations.     

First-principles studies of kinetics in epitaxial growth of III–V semiconductors

We demonstrate how first-principles calculations using density-functional theory (DFT) can be applied to gain insight into the molecular processes that rule the physics of materials processing. Specifically, we study the molecular beam epitaxy (MBE) of arsenic compound semiconductors. For homoepitaxy of GaAs on GaAs (001), a growth model is presented that builds on results of DFT calculations for molecular processes on the β2-reconstructed GaAs (001) surface, including adsorption, desorption, surface diffusion, and nucleation. Kinetic Monte Carlo simulations on the basis of the calculated energetics enable us to model MBE growth of GaAs from beams of Ga and As₂ in atomistic detail. The simulations show that island nucleation is controlled by the reaction of As₂ molecules with Ga adatoms on the surface. The analysis reveals that the scaling laws of standard nucleation theory for the island density as a function of growth temperature are not applicable to GaAs epitaxy. We also discuss heteroepitaxy of InAs on GaAs (001), and report first-principles DFT calculations for In diffusion on the strained GaAs substrate. In particular, we address the effect of heteroepitaxial strain on the growth kinetics of coherently strained InAs islands. The strain field around an island is found to cause a slowing down of material transport from the substrate towards the island, and thus helps to achieve more homogeneous island sizes. Received: 2 May 2001 / Accepted: 23 July 2001 / Published online: 3 April 2002     

Weakly bound finite systems: (?He)N-Rb?(3Σu), clustering structures from a quantum Monte Carlo approach

We report here ((4)He)(N)-Rb(2)((3)Σ(u)) complexes, 2 ≤ N ≤ 20, analysed through a quantum diffusion Monte Carlo stochastic approach. The calculations show that the spin stretched dimer molecule is bound outside the pure He sub-complex, due to the stronger He-He potential as compared with the He-Rb(2) interaction, while the rare gas atom moiety presents, in turn, a shell-like structure with ten He adatoms completing the first shell. Our results agree with previous findings on this and similarly weakly interacting systems.     

表面羟基辅助甲醛分子在金红石型TiO2(110)表面迁移动力学研究

As the photo-dissociation product of methanol on the TiO₂(110) surface,the diffusion and desorption processes of formaldehyde (HCHO) were investigated by using scanning tunneling microscope (STM) and density functional theory (DFT).The molecular-level images revealed the HCHO molecules could diffuse and desorb on the surface at 80 K under UV laser irradiation.The diffusion was found to be mediated by hydrogen adatoms nearby,which were produced from photodissociation of methanol.Diffusion of HCHO was significantly decreased when there was only one H adatom near the HCHO molecule.Furthermore,single HCHO molecule adsorbed on the bare TiO₂(110) surface was quite stable,little photo-desorption was observed during laser irradiation.The mechanism of hydroxyl groups assisted diffusion of formaldehyde was also investigated using theoretical calculations.     

Surface diffusion of Cr adatoms on Au(111) by quantum tunneling

The low-temperature surface diffusion of isolated Cr adatoms on Au(111) has been determined using nonperturbing x rays. Changes in the x-ray magnetic circular dichroism spectral line shape together with Monte Carlo calculations demonstrate that adatom nucleation proceeds via quantum tunneling diffusion rather than over-barrier hopping for temperatures <40K. The jump rates are shown to be as much as 35 orders of magnitude higher than that expected for thermal over-barrier hopping at 10 K.     

Surface mass transport of Ag and In on vicinal Si(111)

Mass transport of Ag and In on vicinal Si(111) has been investigated by scanning Auger microscopy (SAM). Highly anisotropic surface diffusion and surface electromigration due to direct current were observed for Ag and In adatoms on 0°−, 0.5°−, 3°− and 6°−off vicinal Si(111) surfaces. The diffusion on the intermediate layer is strongly enhanced in the direction parallel to the step edge for Ag adatoms, while it is remarkably suppressed in the direction perpendicular to the step edge for In adatoms. The activation energy of the diffusion for the Ag adatoms ranged between 0.81 and 1.3 eV, while that for In adatoms increased from 0.31 to 0.66 eV with increasing the vicinal angle. The anisotropic diffusion transport is explained in terms of the step structure and the difference in the binding energy at the step site and the terrace site.     

Diffusion mechanism of Cu adatoms on a Cu(001) surface

Ab initio calculations on surface diffusion of Cu adatoms on Cu(001) are presented. The hopping mechanism with a calculated energy barrier of 0.69 eV is found to be favorable over the exchange mechanism with 0.97 eV. We find from the geometry relaxations that adatoms are significantly attracted to the surface and push away nearest-neighbor atoms in the surface. Lateral relaxations of atoms in the surface are larger than vertical ones.     

Defect-controlled transport properties of metallic atoms along carbon nanotube surfaces

The diffusion mechanism of indium atoms along multiwalled carbon nanotubes is studied by means of photoemission spectromicroscopy and density functional theory calculations. The unusually high activation temperature for diffusion (approximately 700 K), the complex C 1s and In 3d5/2 spectra, and the calculated adsorption energies and diffusion barriers suggest that the indium transport is controlled by the concentration of defects in the C network and proceeds via hopping of indium adatoms between C vacancies.     

Non-monotonous dependence of surface roughness on factors influencing energy of adatoms during thin island film growth

Many experimental results show that surface roughness of thin films can increase, decrease, stay constant or pass through the minimum with the change in substrate temperature, energy of arriving atoms or assisted beam (electrons, photons, ions), depending on material and interval of variation of those parameters. The aim of this paper is to explain and analyze this non-monotonous behavior of surface roughness by proposed kinetic model. The model is based on rate equations and includes processes of surface diffusion of adatoms, nucleation, growth and coalescence of islands in the case of thin films growth in Volmer-Weber mode. It is shown by modeling that non-monotonous dependence of surface roughness on the factors influencing energy of adatoms (e.g. temperature, assisted beam irradiation, accelerating voltage) occurs as a result of interplay between diffusion length of adatoms and size of islands, because both parameters depend on energy of adatoms. Variation of island size and diffusion length results in atomic jumps from islands forming rougher or smoother surface. The functions of surface roughness, island size, island density on diffusion length of adatoms and on other parameters are calculated and analyzed in this work.     

Brownian motion of 2D vacancy islands by adatom terrace diffusion.

We have studied the Brownian motion of two-dimensional (2D) vacancy islands on Ag(110) at temperatures between 175 and 215 K. While the detachment of adatoms from the island and their diffusion on the terrace are permitted in this temperature range, the periphery diffusion of single adatoms is prohibited. The present scanning tunneling microscopy results provide the first direct experimental proof that the Brownian motion of the islands follows a simple scaling law with terrace diffusion being the rate limiting process. The activation energy of the vacancy island motion is determined to 0.41 eV.     

Controlled self-organization of atom vacancies in monatomic gallium layers

Ga adsorption on the Si(112) surface results in the formation of pseudomorphic Ga atom chains. Compressive strain in these atom chains is relieved via creation of adatom vacancies and their self-organization into meandering vacancy lines. The average spacing between these line defects can be controlled, within limits, by adjusting the chemical potential mu of the Ga adatoms. We derive a lattice model that quantitatively connects density functional theory (DFT) calculations for perfectly ordered structures with the fluctuating disorder seen in experiment and the experimental control parameter mu. This hybrid approach of lattice modeling and DFT can be applied to other examples of line defects in heteroepitaxy.     

Hydrogen, sulphur and chlorine coadsorption on Pd(111): a theoretical study of poisoning and promotion

First principles calculations for the coadsorption of hydrogen with sulphur and chlorine on Pd(111) are presented. Individually, both sulphur and chlorine poison hydrogen adsorption, sulphur being the more efficient poison. The observed sulphur poisoning is a structural effect. The adsorption energy decreases and the diffusion barrier increases for hydrogen atoms in the vicinity of sulphur adatoms. A sulphur coverage of 0.33 ML is sufficient to completely poison hydrogen adsorption on Pd(111). The presence of chlorine adatoms on the sulphur-poisoned surface is found to stabilise localised hydrogen adsorption. The possible promotional effects of chlorine on sulphur-poisoned catalysts are discussed.     

Diffusion of tungsten clusters on tungsten (110) surface

Using molecular dynamics simulation and modified analytic embedded-atom method, we have investigated the self-diffusion of clusters on a tungsten (110) surface. As compared to the linear-chain configuration, the close-packed islands for tungsten clusters containing more than nine adatoms have been predicted to be more stable with the relatively lower binding energies. The migration energies show an interesting and oscillating behavior with increasing cluster size. The tetramer, hexamer and octamer have obviously higher migration energies than the others. The different atomic configurations and diffusion mechanisms have been determined during the diffusion processes. It is clear that the dimer-shearing mechanism occurs inside the hexamer, while it occurs at the periphery of heptamer. The successive hopping mechanism of individual atom is of critical importance in the migration of the clusters containing five or fewer adatoms. In addition, the diffusion of a cluster with nine adatoms is achieved through the changes of the cluster shape.     

Study of electronic and optical properties of pure and metal decorated boron nitride nanoribbons (B15N14H14-X): first principle calculations

Density functional theory (DFT)/time dependent density functional theory (TDDFT) based calculations were performed for basis sets 6-31G for DFT and 6-31G (d), 6-31G (d,p) and 6-31+G (d,p) for TDDFT calculations on pure boron nitride nanoribbon (BNNR) B₁₅N₁₅H₁₄ and metal decorated B₁₅N₁₄H₁₄-X BNNRs, where X = Ni⁺, Fe⁺, Co, Cr⁺, Cu and Al. The metal doping ratio = 3.45% and the doping site (nitrogen atom), were fixed for all the BNNRs. Electronic properties dipole moment, binding energy and bandgap were determined. Absorption properties in the wavelength range (100–600 nm) were studied, and optical gaps, absorption wavelengths, oscillator strengths and dominant transitions were calculated. The effect of metal doping on the electronic and optical properties was investigated. Single metal doping shifts the electronic gap of pure BNNR from insulating to semiconducting nature. Red shift in the absorption wavelengths from ultraviolet to visible in all the BNNRs was noticed.     

Molecular nano-arches on silicon

The formation of molecular nano-arches on the Si(1 1 1)-7 × 7 surface was modeled using density functional theory (DFT). It has been suggested, based on the calculations, that the arches are formed by molecular dimers of chlorobenzene at near-monolayer coverages. Molecules of the dimer are covalently bound to two silicon adatoms and to each other thereby forming a molecular arch on the surface. The structure of the molecular dimer was calculated at the B3LYP/6-31G(d) level of theory. The dimers were found to be stable at room temperature, and to form a near-monolayer coverage, which has been observed in the experiment [X.H. Chen, Q. Kong, J.C. Polanyi, D. Rogers, S. So, Surf. Sci. 340 (1995) 224; Y. Cao, J.F. Deng, G.Q. Xu, J. Chem. Phys. 112 (2000) 4759].     

Monolayered adatom aggregation induced by metallofullerene molecules on Cu(100)

The adsorption and self-assembly of Gd@C₈₂ molecules on Cu(100) surface have been investigated using scanning tunneling microscopy (STM). The metallofullerene molecules in the assemblies showed two characteristic apparent heights in the STM images. STM manipulation and spectroscopy was performed and revealed the formation of Cu adatom islands underneath the Gd@C₈₂ molecules. The monolayered Cu aggregates were resulted from the adatom–molecule complexation, which is supported by density functional theory (DFT) calculations that show charge transfer and electrostatic interactions between Gd@C₈₂ and adatoms. In addition, sub-molecularly resolved STM images demonstrated the structural and orientational ordering of Gd@C₈₂ assemblies upon thermal annealing. DFT calculations demonstrated that Gd atom located at the lower part of the carbon cage is a favored adsorption configuration for Gd@C₈₂ molecules adsorbed on Cu(100).     

Quantum-mechanical calculations based on density functional theory

The basic concepts of density functional theory (DFT) together with the local density approximation (LDA) and the recent improvement in form of the generalized gradient approximations (GGA) are discussed. Band structure calculations using the full-potential linearized augmented plane wave (FP-LAPW) method are presented in relation to pseudopotential schemes both corresponding to T=0. For finite temperatures the most advanced technique is the Car-Parrinello (CP) molecular dynamics (MD) approach, e.g. in its projector augmented wave (PAW) implementation. In CP-MD simulations nuclear motion and the electronic degrees of freedom are treated within one formalism. Such DFT calculations are illustrated for selected examples, including the breathing mode of BaBiO₃. the phase transition in SrTiO₃ and VO₂ and the Li diffusion in the superionic conductor Li₃N studied by conventional and CP molecular dynamics.