Novel charge density wave transition in crystals of R5Ir4Si10

We review the observation of novel charge density wave (CDW) transitions in ternary R₅Ir₄Si₁₀ compounds. A high quality single crystal of Lu₅Ir₄Si₁₀ shows the formation of a commensurate CDW along c-axis below 80 K in the (h, 0, l) plane that coexists with BCS type superconductivity below 3.9 K. However, in a single crystal of Er₅Ir₄Si₁₀, one observes the development of a 1D-incommensurate CDW at 155 K, which then locks into a purely commensurate state below 55 K. The well-localized Er³ moments are antiferromagnetically ordered below 2.8 K which results in the coexistence of strongly coupled CDW with local moment antiferromagnetism in Er₅Ir₄Si₁₀. Unlike conventional CDW systems, extremely sharp transition (width ∼ 1.5 K) in all bulk properties along with huge heat capacity anomalies in these compounds makes this CDW transition an interesting one.     

EXAFS analysis of Er sites in Er–O and Er–F co-doped crystalline Si

We present extended X-ray absorption fine structure (EXAFS) and photoluminescence (PL) analyses of Er–O and Er–F co-doped Si. Samples were prepared by multiple implants at 77 K of Er and co-dopant (O or F) ions resulting in the formation of a2 μm thick amorphous layer uniformly doped with 1×10¹⁹ Er/cm³ and 3×10¹⁹ O/cm³, 1×10²⁰ O/cm³ or 1×10²⁰ F/cm³. EXAFS measurements show that the local environment of the Er sites in the amorphous layers consists of 6 Si first neighbors. After epitaxial regrowth at 620°C for 3 h, Er is fully coordinated with 8 F ions in the Er–F samples, while Si and O ions are concomitantly present in the first shell of O co-doped samples. Post regrowth thermal treatments at 900°C leave the coordination unchanged in the Er+F, while the Er+O (ratio 1 : 10) doped samples present Er sites with a fully O coordinated shell with an average of 5 O atoms and 4 O atoms after 30 s and 12 h, respectively. We have also found that the fine structure and intensity of the high-resolution PL spectra are strongly dependent on the Er-impurity ratio and on thermal process parameters in the Er–O co-doped samples, while this is not observed for the F-doped samples. The most intense PL response at 15 K was obtained for the 1 : 3 E : O ratio, suggesting that an incomplete O shell around Er is particularly suitable for optical excitation.     

The angular magnetothermoelectric power of a charge density wave system

The angular dependence of the magnetothermopower of a charge transfer organic salt α-(ET)(2)KHg(SCN)(4) below (4 K) and above (9 K) the phase transition temperature, T(p) = 8 K, and under fields of 15 T and 25 T, below and above the 'kinkfield', has been studied. We find that for a longitudinal thermoelectric measurement both an interlayer thermopower (the Seebeck effect), S(zz), and a transverse thermopower (the Nernst effect), S(yz), exist in all three different B-T phases (the CDW (0), CDW (x) and metallic states) with large amplitude. Both thermoelectric effects display a resonant-like behavior without a sign reversal at the angles corresponding to angular magnetoresistance oscillation minima and maxima in this compound. The resonant behavior is most evident in the CDW(0) state, indicating a mechanism involving the Fermi surface nesting. Angular dependences reveal different behaviors of the thermopower and Nernst effect in the high magnetic field (CDW(x)) state.     

Charge-density-wave instabilities and quantum transport in the monophosphate tungsten bronzes with m = 5 alternate structure

Resistivity, thermoelectric power and magnetotransport measurements have been performed on single crystals of the quasi two-dimensional monophosphate tungsten bronzes (PO₂)₄(WO₃)_2m for m =5 with alternate structure, between 0.4 K and 500 K, in magnetic fields of up to 36 T. These compounds show one charge density instability (CDW) at 160 K and a possible second one at 30 K. Large positive magnetoresistance in the CDW state is observed. The anisotropic Shubnikov-de Haas and de Haas-van Alphen oscillations detected at low temperatures are attributed to the existence of small electron and hole pockets left by the CDW gap openings. Angular dependent magnetoresistance oscillations (AMRO) have been found at temperatures below 30 K. The results are discussed in terms of a weakly corrugated cylindrical Fermi surface. They are shown to be consistent with a change of the Fermi surface below 30 K. Received 23 November 1999 and Received in final form 23 March 2000     

S-Wave Superconductivity in Kagome Metal CsV_3Sb_5 Revealed by ~(121/123)Sb NQR and ~(51)V NMR Measurements

We report ~(121/123)Sb nuclear quadrupole resonance(NQR) and ~(51)V nuclear magnetic resonance(NMR) measurements on kagome metal CsV_3 Sb_5 with T_c=2.5 K.Both ~(51)V NMR spectra and ~(121/123)Sb NQR spectra split after a charge density wave(CDW) transition,which demonstrates a commensurate CDW state.The coexistence of the high temperature phase and the CDW phase between 91 K and 94 K manifests that it is a first-order phase transition.At low temperature,electric-field-gradient fluctuations diminish and magnetic fluctuations become dominant.Superconductivity emerges in the charge order state.Knight shift decreases and 1/T_1T shows a Hebel-Slichter coherence peak just below T_c,indicating that CSV_3 Sb_5 is an s-wave superconductor.     

Charge density wave transport in NbSe<Subscript>3</Subscript> at low temperatures under high magnetic field

Charge density wave (CDW) depinning and sliding regimes have been studied in NbSe₃ at low temperatures down to 1.5 K under magnetic field of 19 T oriented along the c-axis. We found that the threshold field for CDW depinning becomes temperature independent below T ₀ ≈ 15 K. Also CDW current to frequency ratio characterizing CDW sliding regime increases by factor 1.7 below this temperature. The results are discussed as a crossover from thermal fluctuation to tunneling CDW depinning at T < T ₀. Besides, we found that CDW sliding strongly suppresses the amplitude of Shubnikov-de Haas oscillations of magnetoresistance.     

Thermal expansion measurements of the quasi-one-dimensional conductor K0.30MoO3

The charge density wave (CDW) dynamics of the quasi-one-dimensional conductor K_0.30MoO₃ shows two different regimes depending on the temperature: a strongly damped CDW motion above ∼50 K and CDW motion with almost no damping below ∼50 K. In a search for a characterization of this CDW behaviour, we performed thermal expansion measurements on K_0.30MoO₃ single crystals in the temperature range 4-250 K. In addition to the anomaly observed at the Peierls transition at 180 K along the [102] direction, an anomaly is observed at ∼50 K along the [−201] and [102] directions. The results are discussed in relation with the change in the CDW rigidity at ∼50 K.     

Robustness of the unidirectional stripe order in the kagome superconductor CsV3Sb5

V-based kagome materials AV₃Sb₅ (A=K, Rb, Cs) have attracted much attention due to their novel properties such as unconventional superconductivity, giant anomalous Hall effect, charge density wave (CDW) and pair density wave. Except for the 2a₀×2a₀ CDW (charge density wave with in-plane 2×2 superlattice modulation) in AV₃Sb₅, an additional 1×4 (4a₀) unidirectional stripe order has been observed at the Sb surface of RbV₃Sb₅ and CsV₃Sb₅. However, the stability and electronic nature of the 4a₀ stripe order remain controversial and unclear. Here, by using low-temperature scanning tunneling microscopy/spectroscopy (STM/S), we systematically study the 4a₀ stripe order on the Sb-terminated surface of CsV₃Sb₅. We find that the 4a₀ stripe order is visible in a large energy range. The STM images with positive and negative bias show contrast inversion, which is the hallmark for the Peierls-type CDW. In addition, below the critical temperature about 60 K, the 4a₀ stripe order keeps unaffected against the topmost Cs atoms, point defects, step edges and magnetic field up to 8 T. Our results provide experimental evidences on the existence of unidirectional CDW in CsV₃Sb₅.     

铒掺杂富硅热化SiO2／Si发光薄膜的显微结构

利用金属蒸气真空弧(MEVVA)离子源将稀土元素Er离子掺杂到富硅热氧化SiO2/Si薄膜中.卢瑟福背散射(RBS)和X-射线电子能谱仪(XPS)分析表明,Er浓度可达原子百分数(x)～10,即Er的原子体浓度为～1021·     

The influence of oxygen on the lattice sites of rare earths in silicon

We have used conversion electron emission channeling to investigate the lattice sites of ^167mEr following implantation of the radioactive isotope ¹⁶⁷Tm into CZ Si and FZ Si at varying doses (6×10¹² – 5×10¹³ cm⁻²). In all cases isothermal annealing at 900°C caused Er to leave its preferred near-tetrahedral sites in favour of random lattice sites, but this process occurred by orders of magnitude faster in CZ Si. Furthermore, in CZ Si the incorporation of Er on random lattice sites was fastest in samples implanted with low doses of Tm+Er. We compare our experimental results to a simple numerical model which accounts for the diffusion of Er and O and the formation of Er_nO_m complexes. On the basis of this model, our experimental data indicate that only a few (probably between 1 and 2) O atoms are required in order to remove an Er atom from its tetrahedral site.     

In-chain tunneling through charge-density-wave nanoconstrictions and break junctions

We have fabricated longitudinal nanoconstrictions in the charge-density wave conductor (CDW) NbSe3 using a focused ion beam and using a mechanically controlled break-junction technique. Conductance peaks are observed below the TP1=145 K and TP2=59 K CDW transitions, which correspond closely with previous values of the full CDW gaps 2Delta1 and 2Delta2 obtained from photoemission. These results can be explained by assuming CDW-CDW tunneling in the presence of an energy gap corrugation epsilon2 comparable to Delta2, which eliminates expected peaks at +/-|Delta1+Delta2|. The nanometer length scales our experiments imply indicate that an alternative explanation based on tunneling through back-to-back CDW-normal-conductor junctions is unlikely.     

Tri-hexagonal charge order in kagome metal CsV3Sb5 revealed by 121Sb nuclear quadrupole resonance

We report ¹²¹Sb nuclear quadrupole resonance(NQR)measurements on kagome superconductor CsV₃Sb₅ with Tc=2.5 K.¹²¹Sb NQR spectra split after a charge density wave(CDW)transition at 94 K,which demonstrates a commensurate CDW state.The coexistence of the high temperature phase and the CDW phase between 91 K and 94 K manifests that it is a first order phase transition.The CDW order exhibits tri-hexagonal deformation with a lateral shift between the adjacent kagome layers,which is consistent with 2×2×2 superlattice modulation.The superconducting state coexists with CDW order and shows a conventional s-wave behavior in the bulk state.     

Interaction of both charge density waves in NbSe3 from interlayer tunneling experiments

An interlayer tunneling technique has been used for spectroscopy of charge density wave (CDW) energy gaps (Δ_1,2) in NbSe₃ subsequently opened at the Fermi surface on decreasing temperature at T _p1 = 145 K (CDW1) and at T _p2 = 60 K (CDW2). We found that the CDW2 formation is accompanied by an increase of the CDW1 gap below T _p2. The maximum enhancement of Δ₁, δΔ₁ is about 10%. The effect observed has been predicted theoretically as resulting from the joint phase locking of both CDWs with the underlying crystalline lattice below T _p2. The text was submitted by the authors in English.     

Pressure tuning of the anomalous Hall effect in the kagome superconductor CsV3Sb5

Controlling the anomalous Hall effect(AHE)inspires potential applications of quantum materials in the next generation of electronics.The recently discovered quasi-2D kagome superconductor CsV₃Sb₅ exhibits large AHE accompanying with the charge-density-wave(CDW)order which provides us an ideal platform to study the interplay among nontrivial band topology,CDW,and unconventional superconductivity.Here,we systematically investigated the pressure effect of the AHE in CsV₃Sb₅.Our high-pressure transport measurements confirm the concurrence of AHE and CDW in the compressed CsV₃Sb₅.Remarkably,distinct from the negative AHE at ambient pressure,a positive anomalous Hall resistivity sets in below 35 K with pressure around 0.75 GPa,which can be attributed to the Fermi surface reconstruction and/or Fermi energy shift in the new CDW phase under pressure.Our work indicates that the anomalous Hall effect in CsV₃Sb₅ is tunable and highly related to the band structure.     

Metallic spin-liquid behavior of the geometrically frustrated Kondo lattice

Strongly frustrated magnetism of the metallic pyrochlore oxide Pr2Ir2O7 has been revealed by single crystal study. While Pr 4f moments have an antiferromagnetic RKKY interaction energy scale of /T*/ = 20 K mediated by Ir 5d-conduction electrons, no magnetic long-range order is found except for partial spin freezing at 120 mK. Instead, the Kondo effect, including a lnT dependence in the resistivity, emerges and leads to a partial screening of the moments below /T*/. Our results indicate that the underscreened moments show spin-liquid behavior below a renormalized correlation scale of 1.7 K.     

Effects of radiation damage on the charge density wave transitions in NbSe3

We have measured the electrical resistivity of NbSe₃ samples which have been radiation damaged with 2.5 MeV protons up to a defect concentration of 0.5%. We find that, unlike substitutional impurities, the defects do not destroy the charge density wave (CDW) transitions and the samples do not go superconducting. The defects become more effective scatterers below the CDW transitions so that the defect resistivity is temperature dependent. The defects pin the CDWs randomly so that carriers in the unnested regions can be scattered by the CDW. This leads to an enhancement of the defect resistivity. The resistivity of the highly damaged samples is still increasing with decreasing temperatures to below 1 K.     

Low-temperature structure of indium quantum chains on silicon

The array of quasi-one-dimensional indium chains in the Si(111)- (4x1)-In surface reconstruction exhibits a phase transition to a low-temperature (8x2) phase. It has been suggested that this phase transition is related to a charge density wave (CDW) formation. The x-ray diffraction results presented here demonstrate that at 20 K the CDW has not yet condensed into a superstructure even though good transverse coupling was established. This indicates that CDW formation cannot be the driving force for the phase transition. Furthermore we elucidate the subtle highly anisotropic interchain correlations and reveal the detailed atomic structure of the low-temperature (8x2) phase.     

Hysteresis in the electrical properties of orthorhombic tantalum trisulphide: Evidence for an incommensurate-commensurate charge-density wave transition?

A study of electrical conduction in orthorhombic TaS₃ has revealed the existence of thermal hysteresis throughout the temperature range 55 K < T < 205 K. This is attributed to variability in the wavevector q of the charge-density wave (CDW) which develops below T_p = 215 K, and confirms the recent finding, from electron diffraction, that at temperatures not too far below T_p the CDW is incommensurate with the underlying lattice. Evidence that q becomes commensurate, at least along the chain direction at 55 K is provided by the vanishing of hysteresis at that temperature, and also by a rise in the threshold field for continuous motion of the CDW.From its dependence on temperature it is concluded that between T_p and 55 K the conduction in the linear regime is better described as that of a Peierls semi-metal, rather than that of a Peierls intrinsic semiconductor. At most temperatures within that range electrical hysteresis also is observed, and a detailed study of this leads to the tentative conclusion that translation of the CDW conveys negative charge, carried presumably by negatively-charged discommensurations. The mechanisms of conduction below 55 K remain uncertain.     

(Si,Er)双注入热氧化硅的光致发光

采用强流金属蒸汽真空弧（MEVVA）离子源注入机，先将Si大束流注入热氧化SiO2/单晶硅，直接形成镶嵌在SiO2中的纳米晶Si，再小束流注入Er。Er离子在掺杂层中的浓度可达10^21cm^-3量级，大大地提高了作为孤立发光中心的Er^3 浓度。在77K和室温下，观察到了Er^3 的1.54цm特征发射。     

Si中掺Er的原子构型与电子特性

采用定域密度泛函-离散变分方法(LDF-DVM)计算了Si中掺Er的原子构型与电子特性，并计算了O共掺杂对Si中掺Er体系的原子构型与电子特性的影响.结果表明，在没有O共掺杂时，Er处于四面体间隙位置时能量最低，此时Er的5d轨道在Si的导带中引入浅的共振态.处于替代位置的Er形成能略高，Er的5d轨道在Si的导带顶附近引入了受主态.当有O存在时，体系的形成能降低，能量最低的构型是Er处于六角形间隙位置，周围有6个O，此时Er的5d轨道在Si的导带下约为0.3eV处引入杂质态.从而解释了Si中掺Er体系在 关键词：