Intrinsic tunneling spectra of Bi2(Sr(2-x)Lax)CuO(6+delta)

We have measured intrinsic-tunneling spectra of a single CuO-layer La-doped Bi2(Sr(2-x)Lax)CuO(6+delta) (Bi2201-Lax). Despite a difference of a factor of 3 in the optimal superconducting critical temperatures for Bi2201-La0.4 and Bi2212 (32 and 95 K, respectively) and different spectral energy scales, we find that the pseudogap vanishes at a similar characteristic temperature T* approximately 230-300 K for both compounds. We find also that, in Bi2201-Lax, pseudogap humps are seen as sharp peaks and, in fact, even dominate the intrinsic spectra.     

Absence of a loss of in-plane infrared spectral weight in the pseudogap regime of Bi(2)Sr(2)CaCu(2)O(8+delta)

The ab-plane reflectance of Bi(2)Sr(2)CaCu(2)O(8+delta) (Bi-2212) thin films was measured in the 30-25 000 cm(-1) range for one underdoped ( T(c) = 70 K), and one overdoped sample ( T(c) = 63 K) down to 10 K. We find similar behaviors in the temperature dependence of the normal-state infrared response of both samples. Above T(c), the effective spectral weight, obtained from the integrated conductivity, does not decrease when T decreases, so that no opening of an optical pseudogap is seen. We suggest that these are consequences of the pseudogap opening in the k = (0,pi) direction and of the in-plane infrared conductivity being mostly sensitive to the k = (pi,pi) direction.     

Accurate prediction of large antiferromagnetic interactions in high- T(c) HgBa2Ca(n-1)Cu(n)O(2n+2+delta) ( n = 2,3) superconductor parent compounds

The in-plane nearest-neighbor Heisenberg magnetic coupling constant, J, of La2CuO4, Nd2CuO4, Sr2CuO2Cl2, YBa2Cu3O6, and undoped HgBa(2)Ca(n-1)Cu(n)O(2n+2+delta) ( n = 1,2,3) is calculated from accurate ab initio configuration interaction calculations. For the first four compounds, the theoretical J values are in quantitative agreement with experiment. For the Hg-based compounds the predicted values are -135 meV ( n = 1) and approximately -160 meV ( n = 2,3), the latter being much larger than in previous cases and, for n = 3, increasing with pressure. Nevertheless, the physics governing J in all these layered cuprates appears to be the same. Moreover, calculations suggest a possible relationship between J and T(c).     

Correlation of tunneling spectra in Bi(2)Sr(2)CaCu(2)O(8+delta) with the resonance spin excitation

New break-junction tunneling data are reported in Bi(2)Sr(2)CaCu(2)O(8+delta) over a wide range of hole concentration from underdoped (T(c) = 74 K) to optimal doped (T(c) = 95 K) to overdoped (T(c) = 48 K). The conductances exhibit sharp dips at a voltage, Omega/e, measured with respect to the superconducting gap. Clear trends are found such that the dip strength is maximum at optimal doping and that Omega scales as 4.9kT(c) over the entire doping range. These features link the dip to the resonance spin excitation and suggest quasiparticle interactions with this mode are important for superconductivity.     

Low energy excitation and scaling in Bi(2)Sr(2)Ca(n-1)Cu(n)O(2n+4) (n=1-3): angle-resolved photoemission spectroscopy

Angle-resolved photoemission spectroscopy (ARPES) has been performed on the single- to triple-layered Bi-family high-T (c) superconductors (Bi(2)Sr(2)Ca(n-1)Cu(n)O(2n+4), n=1-3). We found a sharp coherent peak as well as a pseudogap at the Fermi level in the triple-layered compound. Comparison among three compounds has revealed a universal rule that the characteristic energies of superconducting and pseudogap behaviors are scaled with the maximum T (c).     

Two- to three-dimensional crossover in the electronic structure of (Bi, Pb)2(Sr, La)2CuO(6+delta) from angle-resolved photoemission spectroscopy

The hole-concentration (x) dependence of the three-dimensional energy-momentum dispersion in (Bi, Pb)2(Sr, La)2CuO(6+delta) has been investigated by angle-resolved photoemission spectroscopy. For a heavily overdoped sample of T(c) < or = 0.5 K, an energy dispersion of approximately 10 meV in width is observed in the vicinity of the (pi, 0) point with varying momentum along the c axis (k(z)). This k(z) dispersion is zero for underdoped, optimally doped, and slightly overdoped samples up to a doping level corresponding to T(c) = 22 k. At higher doping levels we observe significant dispersion of the order of 10 meV (sample with T(c) < or = 0.5 K). This is clear evidence that at a doping value corresponding to T(c) = 22 K, a crossover from two- to three-dimensional electronic structure occurs.     

Doubling of the bands in overdoped Bi2Sr2CaCu2O(8+delta): evidence for c-axis bilayer coupling

We present high resolution angle resolved photoemission data of the bilayer superconductor Bi(2)Sr(2)CaCu(2)O(8+delta) (Bi2212) showing a clear doubling of the near E(F) bands. This splitting approaches zero along the (0,0)-->(pi,pi) nodal line and is not observed in single layer Bi(2)Sr(2)CuO(6+delta) (Bi2201), indicating that the splitting is due to the long sought after bilayer splitting effect. The splitting has a magnitude of approximately 75 meV near the middle of the zone, extrapolating to about 110 meV near the (pi,0) point. The existence of these two bands also helps to clear up the recent controversy concerning the topology of the Fermi surface.     

Development of a novel high speed (electron-mobility) epi-n-ZnO thin films by L-MBE for III–V opto-electronic devices

Intrinsic epitaxial zinc oxide (epi-ZnO) thin films were grown by laser-molecular beam epitaxy (L-MBE), i.e., pulsed laser deposition (PLD) technique using Johnson Matthey “specpure”-grade ZnO pellets. The effects of substrate temperatures on ZnO thin film growth, electrical conductivity (σ), mobility (μ) and carrier concentration (n) were studied. As well as the feasibility of developing high quality conducting oxide thin films was also studied simultaneously. The highest conductivity was found for optimized epi-ZnO thin films is σ=0.06×10³ ohm⁻¹ cm⁻¹ (n-type) (which is almost at the edge of semiconductivity range), carrier density n=0.316×10¹⁹ cm⁻³ and mobility μ=98 cm²/V s. The electrical studies further confirmed the semiconductor characteristics of epi-n-ZnO thin films. The relationship between the optical and electrical properties were also graphically enumerated. The electrical parameter values for the films were calculated, graphically enumerated and tabulated. As a novelty point of view, we have concluded that without doping and annealing, we have obtained optimum electrical conductivity with high optical transparency (95%) for as deposited ZnO thin films using PLD. Also, this is the first time that we have applied PLD made ZnO thin films to iso-, hetero-semiconductor–insulator–semiconductor (SIS) type solar cells as transparent conducting oxide (TCO) window layer. We hope that surely these data be helpful either as a scientific or technical basis in the semiconductor processing.     

Low-temperature AC conductivity of Bi2Sr2CaCu2O8+δ

We report measurements of anamolously large dissipative conductivities, σ₁, in Bi₂Sr₂CaCu₂O_8+δ at low temperatures. We have measured the complex conductivity of Bi₂Sr₂CaCu₂O_8+δ thin films at 100–600 GHz as a function of doping from the underdoped to the overdoped state. At low temperatures there exists a residual σ₁ which scales with the T=0 superfluid density as the doping is varied. This residual σ₁ is larger than the possible contribution to σ₁ from a thermal population of quasiparticles (QP) at the d-wave gap nodes.     

Loss of superconducting phase coherence in YBa(2)Cu(3)O(7) films: vortex-loop unbinding and Kosterlitz-Thouless phenomena

The linear conductance G' + iG(") parallel to the CuO(2) planes of flat d = 50-600 nm thin films is measured between 30 mHz and 800 kHz. The decay of the phase-coherent superfluid density signals the proliferation of 3D vortex loops which terminates at T*相似文献   

Role of Nd/Ba disorder on the penetration depth of Nd(1+x)Ba(2-x)Cu(3)O(7-delta) thin films

We report on a study on the effect of Nd/Ba disorder on the ab-plane penetration depth of epitaxial Nd(1+x)Ba(2-x)Cu(3)O(7-delta) thin films. While in stoichiometric samples lambda(T) at low temperature is linear, Nd-rich films exhibit a quadratic law. For low Nd excess (x<0.04), a satisfying fit is obtained using the "dirty" d-wave model assuming that Nd ions at Ba sites act as strong scattering centers. At high x (x>0.15) the data are explained if Nd/Ba disorder becomes less effective as a source of scattering. The effect of localization has been discussed to account for the experimental results.     

Effects of the doping and the number of planes on the shadow bands of Bi-based cuprates

Angle resolved photoemission spectroscopy (ARPES) has been used to investigate the shadow bands present at the Fermi surface of bismuth based superconductors. Bi₂Sr₂CaCu₂O_8+δ (Bi2212) single crystals with different doping levels and Bi₂Sr₂CuO_6+δ (Bi2201) thin films have been studied by means of momentum distribution curves along the ΓY high symmetry direction in two different Brillouin zones and for an extensive photon energy range. The results show an enhancement of the shadow band intensity in the second Brillouin zone for photon energies around hν=30 eV. Furthermore, the ratio Shadow Bands/Main Band is shown to be constant as a function of both the doping level and the number of CuO₂ planes. An interpretation of this observation on the basis of the current theoretical models will be provided.     

Neutron-neutron final state interactions in the reaction H(d, pp)2n

The reaction ²H(d, pp)2n has been studied at a bombarding energy of 12 MeV, detecting the two protons in coincidence at angles of ±20° as well as +20° and −15°. In both cases, a narrow band was observed in a three-dimensional plot of the yield versus the energies of the two detected protons. E1 and E2, with most of the yield concentrated in the area where E1 ≈ E2. This suggests a two-step sequential process of the type d + d → (2p) + (2n) → p + p + n + n. In a missing mass plot for the third, undetected “particle” a pronounced, narrow peak appears at low relative energies in the (nn) system.     

密封容器中后处理制备Tl2Ba2CaCu2Oy高温超导薄膜及其性能研究

以铝酸镧（001）单晶为基片，采用两步法制备Tl2Ba2CaCu2Oy（Tl 2212）高 温超导薄膜.首先，利用脉冲激光沉积（PLD）工艺沉积Ba2CaCu2Ox非晶前驱体薄膜；然后，前驱体薄膜在高温（720—850℃）下密封钢容器里铊化结晶形成Tl 2212薄膜.XRD结果表明Tl2212 薄膜是沿c轴方向生长的，其相组成为Tl 2212，摇摆曲线（0012）的半高宽为0.72° ，SEM图像显示其表面光滑平整，其零电阻温度为106.2K. 关键词： Tl 2212超导薄膜 脉冲激光沉积     

Theoretical investigation on radiation tolerance of M_(n+1)AX_n phases

Ternary M_(n+1)AX_n phases with layered hexagonal structures, as candidate materials used for next-generation nuclear reactors, have shown great potential in tolerating radiation damage due to their unique combination of ceramic and metallic properties. However, M_(n+1)AX_n materials behave differently in amorphization when exposed to energetic neutron and ion irradiations in experiment. We first analyze the irradiation tolerances of different M_(n+1)AX_n(MAX) phases in terms of electronic structure, including the density of states(DOS) and charge density map. Then a new method based on the Bader analysis with the first-principle calculation is used to estimate the stabilities of MAX phases under irradiation. Our calculations show that the substitution of Cr/V/Ta/Nb by Ti and Si/Ge/Ga by Al can increase the ionicities of the bonds,thus strengthening the radiation tolerance. It is also shown that there is no obvious difference in radiation tolerance between M_(n+1)AC_n and M_(n+1)AN_n due to the similar charge transfer values of C and N atoms. In addition, the improved radiation tolerance from Ti_3AlC_2 to Ti_2AlC (Ti_3AlC_2 and Ti_2AlC have the same chemical elements), can be understood in terms of the increased Al/TiC layer ratio. Criteria based on the quantified charge transfer can be further used to explore other M_(n+1)AX_n phases with respect to their radiation tolerance, playing a critical role in choosing appropriate MAX phases before they are subjected to irradiation in experimental test for future nuclear reactors.     

Evidence for a transition in the pairing symmetry of the electron-doped cuprates La(2-x)Ce(x)CuO(4-y) and Pr(2-x)Ce(x)CuO(4-y)

We present measurements of the magnetic penetration depth, lambda(-2)(T), in Pr(2-x)Ce(x)CuO(4-y) and La(2-x)Ce(x)CuO(4-y) films at three Ce doping levels, x, near optimal. Optimal and overdoped films are qualitatively and quantitatively different from underdoped films. For example, lambda(-2)(0) decreases rapidly with underdoping but is roughly constant above optimal doping. Also, lambda(-2)(T) at low T is exponential at optimal and overdoping but is quadratic at underdoping. In light of other studies that suggest both d- and s-wave pairing symmetry in nominal optimally doped samples, our results are evidence for a transition from d- to s-wave pairing near optimal doping.     

Nodal quasiparticle lifetime in the superconducting state of Bi(2)Sr(2)CaCu(2)O(8+delta)

We have measured the complex conductivity sigma of a Bi(2)Sr(2)CaCu(2)O(8+delta) thin film between 0.2 and 0.8 THz. We find sigma in the superconducting state to be well described as the sum of contributions from quasiparticles, condensate, and order parameter fluctuations which draw 30% of the spectral weight from the condensate. An analysis based on this decomposition yields a quasiparticle scattering rate on the order of k(B)T/Planck's over 2pi for temperatures below T(c).     

Negative ion photoelectron spectroscopy of 2,2’-bithiophene cluster anions, (2T)n - (n = 1–100)

Cluster anions of 2,2’-bithiophene, (2T)_n^-, were produced up to n ∼500 in the gas-phase. The energetics of the excess electron in the (2T)_n^- clusters with n =1-100 were explored by negative ion photoelectron spectroscopy. When the vertical detachment energies (VDEs) obtained from the photoelectron spectra were analyzed by a plot against n^-1/3, it has been revealed that the excess electron trapping level thus extrapolated is located at ∼0.8 eV below the conduction band minimum (i.e. LUMO) of the 2T thin film. The large slope of the VDEs vs. n^-1/3 plot suggests that the neutral 2T molecules surrounding the anion core take non-planar twisted conformations with permanent dipole moments, resulting in the exceedingly deep trapping of the excess electron in the 2T cluster anions.     

SURFACE PHASE DECOMPOSITION IN Bi2Sr2CaCu2O7-y SINGLE CRYSTALS UNDER NITROGEN IONS IRRADIATION

The influence of irradiation by 30 keV nitrogen ions with a fluence 1×10¹⁸N⁺·cm^-2 on the crystal structure of single crystal Bi₂Sr₂CaCu₂O_7-y was investigated by means of X-ray photoelectron spectroscopy and X-ray diffraction. The irradiation caused a transformation from Bi₂Sr₂CaCu₂O_7-y (2212 phase) to Bi₂Sr₂CuO_5-x (2201 phase). It was observed that. a small amount of metallic bismuth with an average thickness of about 6.3nm appeared after the irradiation. The possible reaction mechanism under nitrogen-ion irradiation was discussed.     

Vibrational spectroscopy of ordered oxygen adiayers on Ni/Cu(001) and Co/Cu(001) thin film systems

We report surface vibrations in c(2 × 2) oxygen adlayers on Ni and Co thin films on a Cu(001) substrate measured at gG by high resolution EELS. For the Ni thin film surface, one phonon peak is measured for varying film thicknesses from 1.3 ML (monolayer) to 6 ML with a constant energy of 221 cm⁻¹. For the Co thin film surface, three loss peaks are found, whose relative intensities change as the film thicknesses are varied. One loss peak at ˜520 cm⁻¹ is tentatively assigned to the Fuchs-Kliewer mode of cobalt oxide (CoO). The other two peaks at 317 and 376 cm⁻¹ are likely related to different bonding sites. Surface phonons on the p(2 × 2) Co thin film (389 cm⁻¹) and a bulk resonance mode (115 cm⁻¹) are also reported.