碳化硅块状气凝胶的制备及应用

碳化硅气凝胶具有高温稳定性、低热膨胀系数、良好的抗热震性以及抗氧化和耐腐蚀等优异的性质,在高温和高腐蚀性环境下的隔热、电磁吸波、过滤和吸附等领域具有较大的应用潜力。然而,块状碳化硅气凝胶的可控制备一直是一项较大的挑战。本文综述了块状碳化硅气凝胶在制备工艺和应用两个方面的研究进展,首先分析总结了各种制备工艺及其优缺点,包括有机/SiO₂复合气凝胶碳热还原法、预陶瓷化聚合物裂解法、化学气相沉积法、高温气相渗硅法和碳化硅纳米线组装法;然后,详细介绍了碳化硅气凝胶在高温隔热和电磁吸波两个领域的应用研究进展;最后,展望了碳化硅气凝胶未来的若干发展方向。     

组合多相催化研究进展*

本文对组合多相催化研究进展进行了较全面的综述,介绍了组合多相催化过程、样品库制备、库表征-高通量筛选技术及相应的微型组合反应器,并讨论了组合多相催化技术的发展趋势.     

氧同位素交换及其在多相催化氧化反应研究中的应用

简单介绍了氧同位素交换技术及其在多相催化氧化反应机理研究中的应用     

微乳液法制备固体催化剂在多相催化领域中的应用

采用微乳液法制备纳米粒子具有粒径可控、粒度分布均匀、粒子不易团聚等优点,在一些反应中表现出优良的催化性能.本文介绍了微乳液的概念,阐述了反相微乳体系(W/O)作为纳米反应器的原理以及用于制备固体催化剂的方法.综述了反相微乳液法制备固体催化剂在多相催化领域中的应用,并指出该技术存在的问题和发展趋势.     

吸附量热技术和多相催化微观动力学

本文介绍了多相催化研究中的吸附量热技术、多相催化微观动力学及其计算机模拟, 以及吸附量热技术在定量表征固体催化剂表面中心和在多相催化微观动力学分析中的重要作用。     

动力学参数数目与法方程条件数的关系

多相催化反应动力学研究的基本问题是动力学方程中的参数估计，它一直是动力学研究中的活跃领域·在参数估计中最常用的方法是最小二乘法．早在1947年［刘开始用线性最小二乘法处理动力学模型的数据．1958年在线性最小二乘法中应用置信区间问题［21．1959年MarguardM出非线性最小二乘法问．前人提出如何求非线性最小二乘法的初值［4］，及加权最小二乘法的重要性问，并对最小二乘法在动力学中的应用做了综述卜］．在多相催化动力学研究中，关干线性最小二乘法遇到根本性困难的问题前人未涉及．我们曾在动力学研究中发现线性最小二乘法的法…     

Monte Carlo方法在催化研究中的应用

介绍了以随机行走为基本特征的ＭｏｎｔｅＣａｒｌｏ方法的一般原理，以及ＭｏｎｔｅＣａｒｌｏ方法在多相催化研究中几个主要方面的应用情况，并对这一方法在催化中的应用前景作了一些展望。     

微动力学在多相催化中的应用

介绍了微动力学和催化反应综合的基本概念 ,论述了进行微动力学分析的基本方法 ,扼要分析了微动力学用于多相催化的研究实例 ,认为微动力学将成为多相催化研究中重要的研究方法     

表面化学

本文从研究内容、研究方法以及与其他学科的联系等方面对表面化学作了系统的介绍,并就表面化学在多相催化和材料科学等领域中应用的有关问题进行了广泛的讨论。     

微动力学在我相催化中的应用

介绍了微动力学和催化反应综合的基本概念,论述了进行微动力学分析的基本方法,扼要分析了微动力学用于多相催化的研究实例,认为微动力学将成为多相催化研究中重要的研究方法。     

多孔SiC纳米片的原位合成及光催化性能

以可膨胀石墨作为原材料,通过高温膨化和机械砂磨得到石墨薄片,再以石墨薄片作为模板合成了不同比表面积的碳化硅纳米片(SiCNSs)。探究了比表面积对SiCNSs光催化制氢性能的影响。结果表明,SiCNSs的比表面积对其产氢性能影响显著,提高光催化剂的比表面积有利于增强其产氢活性。SiCNSs的最大比表面积可达149 m²·g^-1,其光解水产氢速率为51.0μL·g^-1·h^-1。在对石墨薄片和SiCNSs结构、形貌分析的基础上,提出了以石墨薄片为模板原位生成SiCNSs的形成机理,该过程主要遵循气固反应机制。高温下,气态的SiO和Si与石墨薄片反应生成SiCNSs,产物较好地继承了石墨薄片的片状结构。大尺寸石墨片上未反应部分除碳之后留下了大量纳米尺寸穿孔,使得所生成SiC的比表面积反而比小尺寸石墨片产物的高。     

A novel sacrificial interlayer-based method for the preparation of silicon carbide membranes

A novel method is presented based on the use of sacrificial interlayers for the preparation of nanoporous silicon carbide membranes. It involves periodic and alternate coatings of polystyrene sacrificial interlayers and silicon carbide pre-ceramic layers on the top of slip-casted tubular silicon carbide supports. Membranes prepared by this technique exhibit single gas ideal separation factors of helium and hydrogen over argon in the ranges 176–465 and 101–258, respectively, with permeances that are typically two to three times higher than those of silicon carbide membranes prepared previously by the more conventional techniques. Mixed-gas experiments with the same membranes indicate separation factors as high as 117 for an equimolar H₂/CH₄ mixture. We speculate that the improved membrane characteristics are due to the sacrificial interlayers filling the pores in the underlying structure and preventing their blockage by the pre-ceramic polymer. The new method has good promise for application to the preparation of a variety of other inorganic microporous membranes.     

碳化硅衍生碳/球形天然石墨复合材料的制备及其结构调控

为满足储能领域对于材料兼具高能量密度和高功率密度的需求, 本文旨在将具有特殊孔隙结构的碳化物衍生碳与具有高导电性和高能量存储密度的石墨化碳(球形天然石墨)相复合, 制备得到一种多孔碳化硅衍生碳/球形天然石墨(SiC-CDCs@NG)复合材料. 采用X射线衍射(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、拉曼光谱、N₂吸/脱附等方法对材料的组成、结构、形貌、孔结构和比表面积等进行了表征. 结果表明,SiC-CDCs@NG材料具有较大的且可调节的比表面积和微孔体积, 微孔孔径集中在0.5-0.7 nm范围内; 通过改变NG/Si 摩尔比, 可以有效调控CDCs壳和NG核在复合材料中的组成分布、CDCs微孔的体积、孔径分布和比表面积.     

Synthesis and characterization of SiC materials with hierarchical porosity obtained by replication techniques

Porous silicon carbide monoliths were obtained using the infiltration of preformed SiO(2) frameworks with appropriate carbon precursors such as mesophase pitch. The initial SiO(2) monoliths possessed a hierarchical pore system, composed of an interpenetrating bicontinuous macropore structure and 13 nm mesopores confined in the macropore walls. After carbonization, further heat treatment at ca. 1,400 degrees C resulted in the formation of a SiC-SiO(2) composite, which was converted into a porous SiC monolith by post-treatment with ammonium fluoride solution. The resulting porous SiC featured high crystallinity, high chemical purity and showed a surface area of 280 m(2) g(-1) and a pore volume of 0.8 ml g(-1).     

Effect of Nb,Ti, and W ion implantation on surface properties and cell compatibility of silicon carbide

Silicon carbide is considered as a bio-inert semiconductor material; consequently, it has been proposed for potential applications in human body implantation. In this study, we study the effect of implanting different metal ions on the surface properties of silicon carbide single crystal. The valence states of the elements and the surface roughness of implanted SiC were studied using X-ray photoelectron spectroscopy and atomic force microscope, respectively. Osteoblastic MG-63 cells were utilized to characterize the cytocompatibility of ion implanted SiC. The results show that after Nb ion implantation on the SiC surface, it mainly exists in the form of Nb–C bond, Nb–O bond, and a small amount of metallic niobium. The titanium implanted on SiC primarily forms Ti-C bond and Ti-O bond. The tungsten implanted on SiC mostly presents as metallic tungsten and W–O bond. The roughness of silicon carbide single crystal is improved by ion implantation of all three metal ions. Ion implantation of titanium and niobium can improve the cell compatibility and hydrophilicity of silicon carbide, whereas ion implantation of tungsten reduces the cell compatibility and hydrophilicity of silicon carbide.     

Synthesis and properties of a platinum catalyst supported on plasma chemical silicon carbide

A CO oxidation catalyst based on β–SiC and Pt nanoparticles has been synthesized and studied. The average size of Pt clusters on the surface of the plasma-chemical silicon carbide nanoparticles is close to 4 nm. It has been found that the rate of the CO oxidation reaction at low concentrations (100 mg/m³) in air at room temperature over the catalyst based on platinum and silicon carbide nanoparticles is 60–90 times that over a platinum black-based catalyst with a specific surface area of 30 m²/g. The Pt/SiC catalyst containing 12 wt % Pt has been found to provide the maximum CO oxidation rate.     

A hybrid sol–gel synthesis of mesostructured SiC with tunable porosity and its application as a support for propane oxidative dehydrogenation

Porous silicon carbide (SiC) is of great potential as catalyst support in several industrially important reactions because of its unique thermophysical characteristics. Previously porous SiC was mostly obtained by a simple sol–gel or reactive replica technique which can only produce a material with low or medium surface area (< 50 m2 g(?1)). Here we report a new hybrid sol–gel approach to synthesize mesostructured SiC with high surface area (151–345 m2 g(?1)) and tunable porosity. The synthesis route involves a facile co-condensation of TEOS and alkyloxysilane with different alkyl-chain lengths followed by carbothermal reduction of the as-prepared alkyloxysilane precursors at 1350 °C. The resulting materials were investigated by X-ray diffraction, N2 adsorption-desorption, transmission electron microscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy. A mechanism for the tailored synthesis of mesostructured SiC was tentatively proposed. To demonstrate the catalytic application of these materials, vanadia were loaded on the mesostructured SiC supports, and their catalytic performance in oxidative dehydrogenation of propane was evaluated. Vanadia supported on the mesostructured silicon carbide exhibits higher selectivity to propylene than those on conventional supports such as Al2O3 and SiO2 at the same propane conversion levels, mainly owing to its outstanding thermal conductivity which makes contributions to dissipate the heat generated from reaction thus alleviating the hot spots effect and over-oxidation of propylene.     

Possibility of a 2D SiC monolayer formation on Mg(0001) and MgO(111) substrates

The geometrical characteristics of a 2D SiC monolayer on Mg(0001) and MgO(111) plates regarded as potential materials for growing two-dimensional silicon carbide were studied. The most favorable positions of the atoms of 2D SiC on the substrates were determined. In the 2D SiC/Mg(0001) system, unlike in 2D SiC/MgO(111), the deviation of the carbon atom from the silicon carbide monolayer was insignificant (0.08 Å). Consequently, magnesium can be used as a substrate for growing two-dimensional silicon carbide. The use of MgO(111) is not recommended because of a significant distortion of the 2D SiC surface.     

Efficient production of nanoporous silicon carbide from rice husk at relatively low temperature

Nanoporous silicon carbide with a specific surface area of up to 186.45 m² g⁻¹ has been efficiently synthesized from waste rice husk using a magnesiothermic reduction at 950 °C as a key step. Throughout the entire process, the recovery rates of silicon, potassium and phosphorus from rice husk can reach 88.46, 91.5 and 65.5%, respectively. Turning rice husk waste into a real treasure, this promising method for producing porous SiC protects the environment and brings economic benefits.     

Study on the applications of SiC thin films to MEMS techniques through a fabrication process of cantilevers

We have tried to find the most suitable conditions for the deposition process of silicon carbide thin films as a material for MEMS techniques. We have also studied its application to semiconductor processes. To do this, we have tried to fabricate several dimensions of cantilevers with these silicon carbide thin films. High quality silicon carbide thin films are grown by metal-organic chemical vapor deposition (MOCVD). This process employs single molecular precursors such as diethylmethylsilane (DEMS), 1,3-disilabutane (DSB) at a pressure of 1 × 10⁻³ Pa and a growth temperature in the range of 700–1000 °C. Two fabrication methods are tested for initial fabrication of cantilevers. First, deposit SiC thin films on Si based atomic force microscopy (AFM) cantilevers. Second, used the lift-off process. To get three-dimensional cantilever-shaped SiC thin films, moreover, we chemically etched silicon substrate with strong alkaline solution such as TMAH at 80 °C. In addition, a high resolution of probe tips on the cantilevers was achieved using electron-beam deposition in a carbon atmosphere.