低速Xe~(q+)(4≤q≤20)离子与Ni表面碰撞中的光辐射

实验中测量了0.38V_(Bohr)(460 keV)高电荷态Xe~(q+)(4≤q≤20)离子轰击高纯Ni表面发射的400-510 nm光谱.实验结果包括NiⅠ原子谱线,NiⅡ离子谱线,以及入射离子中性化发射的XeⅠ,XeⅡ和XeⅢ谱线.研究了谱线XeⅡ410.419,XeⅢ430.444,XeⅡ434.200,XeⅡ486.254,NiⅠ498.245,NiⅠ501.697,NiⅠ503.502,NiⅠ505.061和NiⅠ508.293 nm的光子产额随着入射离子电荷态的变化.结果表明,入射离子中性化和溅射Ni原子发射谱线的光子产额随着入射离子电荷态的增加而增加,其趋势与入射离子势能一致.     

Eu2+/Dy3+共掺SrSiO3透明微晶玻璃的光学性质

在还原气氛中采用高温熔融法制备了Eu2+-Dy3+共掺硅酸盐玻璃,热处理后得到了Eu2+-Dy3+共掺透明SrSiO3微晶玻璃。测试了样品的激发光谱和发射光谱,研究了不同Eu2+-Dy3+物质的量比下微晶玻璃发光的变化并计算了对应的色坐标。研究发现,样品发射光谱范围在400～600nm,其中400～550nm(绿光)的宽发射谱带来自Eu2+的5d→4f跃迁,而位于483nm(蓝光)和575nm(黄光)的尖峰则来自Dy3+的4F9/2→6 H15/2和4F9/2→6 H13/2跃迁;在紫外(UV)光(365nm)激发下通过调控Eu2+-Dy3+物质的量比可得到发白光的微晶玻璃,当Eu2+-Dy3+物质的量比为1∶8时,Eu2+-Dy3+共掺SrSiO3透明微晶玻璃所发白光最佳,对应的色坐标(0.268,0.356)位于CIE标准色坐标图的白光区域且最接近理想白光。结果表明,Eu2+-Dy3+共掺SrSiO3透明微晶玻璃可作为一种潜在的白光发光二极管用基质材料。     

真空紫外-紫外光激发下的Na_2SO_4:TbF_3的发光性质

在空气中900℃温度下,对纯天然无水芒硝(Na2SO4)和TbF3的混合粉末加热20min,制备了Na2SO4:TbF3发光材料。并测量了在室温中真空紫外-紫外光下的发射和激发光谱。发射光谱有一系列由于Tb3+离子的5D4→7FJ(J=6,5,4,3,2)和5D3→7FJ(J=6,5,4,3,2)跃迁发射峰。通过监测542nm处发光得到的激发光谱,分别由Tb3+离子4fn→4fn-15d跃迁(187,193,218nm),基质吸收(165,200,240nm)引起的强激发谱和禁戒的f-f跃迁产生的弱激发谱组成。在TbF3的掺杂量在0.3%～2%范围内,随着Tb3+离子掺杂量的增加,真空紫外区的激发谱相应地逐渐增强。     

Ce激活氯化钠在真空紫外光激发下的发光性质

采用水热蒸发法制备了NaCl∶Ce3+荧光粉,并通过X射线衍射(XRD)研究了材料的晶体结构。测量并分析材料在室温下的真空紫外激发光谱及相应的发射光谱。结果表明309和324nm的发射峰,对应于Ce3+离子的5d→4f(2 F5/2,2 F7/2)跃迁;激发谱显示6个峰,峰位分别为148,190,205,216,232和247nm。148nm的激发峰是基质吸收引起的;190,205,216,232和247nm是Ce3+的4f→5d跃迁引起的。     

Ca4LaNbMo4O20:Pr3+荧光粉的发光性质

采用高温固相法成功制备出荧光粉Ca₄LaNbMo₄O₂₀:Pr³⁺,通过X射线衍射分析了样品的结构,其结构与CaMoO₄结构相似。在Ca₄LaNbMo₄O₂₀:Pr³⁺的激发光谱中出现了NbO₄^3-和MoO₄^2-的电荷迁移(CTS)吸收和Pr³⁺离子的4f→4f5d激发跃迁,以及Pr³⁺-金属离子的价间电荷迁移(IVCT)吸收;另外在420~520 nm处,还观测到属于Pr³⁺离子的典型f-f激发跃迁。发射光谱中,在452 nm激发下,主要出现绿光和红光两种发射,其峰值位于490 nm和607 nm处,分别是Pr³⁺的³P₀→³H₄和¹D₂→³H₄的跃迁作用;在紫外287 nm激发下出现NbO₄^3-和MoO₄^2-发射和Pr³⁺离子的4f5d→4f跃迁宽带,以及Pr³⁺离子的4f→4f发射峰。     

Xenon 5p–4d cascade emission upon 3d-photoionization

We investigated the photon-emission spectrum of Xe atoms upon photoionization of the Xe 3d-subshell. The 5p-4d spectrum is emitted in the process of the cascading decay of the 3d-vacancy and has a complex multi-component structure reflecting a great number of transitions from various ionic configurations produced during the cascade development. The spectrum is assigned by the direct construction of the cascade de-excitation tree. 21 different transitions between configurations of multiply charged Xe ions (+2 to +6) are found to be contributing to the spectrum. The 5p-4d partial fluorescence yield is found to be six times greater for the 3d-ionization than for the 4d-ionization. The effect of the multiplet splitting in the initial and final states of the emitting transitions is studied.     

Tm3+激活无水芒硝在真空紫外光激发下的发光性质

采用高温固相反应方法在空气中制备了Na2SO4:Tm2+发光材料.用X射线衍射对晶体结构进行了表征.发射光谱由Tm3+内4f12电子跃迁的窄峰组成.激发光谱分别由Tm3+离子4f12→4f115d跃迁(183nm),O2--Tm3+之间的电荷转移带(170 nm)引起的强激发谱和基质吸收(130,223,258 nm)...     

等离子体密度对放电等离子体极紫外光源影响研究

等离子体状态是决定极紫外光源功率和转换效率的最重要因素之一,理论和实验研究上Xe气流量对放电等离子体极紫外光源辐射谱和等离子体状态的影响,对于优化光源工作条件具有重要的意义。理论上,采用碰撞-辐射模型,模拟了非局部热力学平衡条件下,不同电离度的离子丰度分布随电子温度和离子密度的变化。推导了Xe8+~Xe11+离子4d-5p跃迁谱线强度随电子温度的变化趋势。实验上,采用毛细管放电机制,利用罗兰圆谱仪测量和分析了不同等离子体密度条件下,放电等离子体极紫外光谱的变化,分析了Xe气流量对等离子体状态的影响。理论和实验结果表明： 相同的电流条件下,等离子体箍缩时的平均电子温度随着Xe气流量的增加而降低。对于4d-5p跃迁,低电离度离子与高电离度离子谱线强度的比值随着温度的增加而减少。电流28 kA、Xe气流量0.4 sccm(cm3·min-1)时,等离子体Z 箍缩平均电子温度位于29 eV附近。Xe气流量增加时,受离子密度和最佳电子温度的影响,实现Xe10+离子4d-5p跃迁13.5 nm(2%带宽)辐射谱线强度最优化的Xe气流量位于0.3~0.4 sccm之间。     

Lifetime and transition probability determination in xenon ions

Radiative lifetimes have been calculated for 15 levels of Xe VII belonging to the configurations 5s5p, 5p², 5s5d, 5s6s, 5p5d, 4f5p, 5p5d and 5s5f and for 4 levels of the 5p and 5d configurations of Xe VIII. A relativistic Hartree-Fock approach including core-polarization effects, on the one hand, and a purely relativistic multiconfiguration Dirac-Fock method, on the other hand, have been used for the calculations. The accuracy of the present set of results has been assessed through comparisons with radiative lifetime measurements obtained by beam-foil spectroscopy. A good agreement between theory and experiment is observed for most of the levels. A new set of transition probabilities is proposed for 169 transitions of Xe VII and 45 transitions of Xe VIII.     

Discovery of 109Xe and 105Te: superallowed alpha decay near doubly magic 100Sn

Two new alpha emitters 109Xe and 105Te were identified through the observation of the 109Xe --> 105Te --> 101Sn alpha-decay chain. The 109Xe nuclei were produced in the fusion-evaporation reaction 54Fe(58Ni,3n)109Xe and studied using the Recoil Mass Spectrometer at the Holifield Radioactive Ion Beam Facility. Two transitions at Ealpha = 4062 +/- 7 keV and Ealpha = 3918 +/- 9 keV were interpreted as the l = 2 and l = 0 transitions from the 7/2+ ground state in 109Xe (T1/2 = 13 +/- 2 ms) to the 5/2+ ground state and a 7/2+ excited state, located at 150 +/- 13 keV in 105Te. The observation of the subsequent decay of 105Te marks the discovery of the lightest known alpha-decaying nucleus. The measured transition energy Ealpha = 4703 +/- 5 keV and half-life T1/2 = 620 +/- 70 ns were used to determine the reduced alpha-decay width delta2. The ratio delta105Te(2)/delta213Po(2) of approximately 3 indicates a superallowed character of the alpha emission from 105Te.     

气体靶激光等离子体软X-射线源实验研究

介绍了一种无碎屑、高亮度、高工作频率的气体靶激光等离子体软X 射线源。其喷气阀门由压电陶瓷驱动 ,工作频率可达到 40 0Hz。与金属靶激光等离子体软X 射线源相比 ,此光源无碎屑。与喷嘴由电磁阀控制的气体靶激光等离子体软X 射线源相比 ,它有较高的工作频率。一工作在模拟模式的通道电子倍增器被用于探测来自光源的软X 射线辐射 ,其输出信号经过一电荷灵敏前置放大器进一步放大变成电压脉冲信号 ,脉冲幅度与输入电荷灵敏前置放大器的电量成正比。实验测得CO2 ,Xe和Kr在 8～ 2 2nm软X 射线投影光刻常用波段的光谱辐射特性。CO2 光谱包括类锂和类铍离子跃迁形成的线谱 ,Xe光谱是多电荷氙离子 4d 5f,4d 4f,4d 6p和 4d 5p跃迁所形成的光谱。Kr气体靶光谱包括类铜离子、类镍离子、类钴离子和类铁离子跃迁形成的线谱和连续谱。     

Multiwave excimer lamps using XeF/XeCl/KrF/KrCl molecules

Results are presented of an investigation of the spectral and temporal characteristics of an electricdischarge excimer lamp emitting simultaneously on the 351 nm XeF, 308 nm XeCl, 249 nm KrF, and 222 nm KrCl transitions. The He/Kr/Xe/SF₆/HCl working mixtures were excited in a transverse discharge with ultraviolet spark preionization at a total pressure of 25–100 kPa. In order to obtain the same brightness the concentration ratio [Kr]/[Xe] for the excimer molecular transitions was 8/0.8 kPa, and that for the halogen-containing molecules was [SF₆]/[HCl][=[0.06–0.12]/[0.08–0.16] kPa. The duration of the radiation pulses for the excimer molecular transitions at atmospheric pressure was 100–200 ns and when the total mixture pressure was reduced to 250 kPa, this was doubled or trebled. The service life of the spontaneous radiation for B-X transitions in excimer molecules was 10⁵ pulses. Zh. Tekh. Fiz. 68, 64–67 (December 1998)     

MO-Y2O3-B2O3:Re(M=Mg,Sr;Re=Eu,Tb)的真空紫外光谱特性

采用高温固相反应法合成了掺杂Eu3 及Tb3 的17MO-7.88Y2O3-75B2O3样品,研究了它们的光谱特性,结果表明,MO-T2O3-B2O3基质在真空紫外(VUV)区有很强的吸收,MgO-Y2O3-B2O3:Eu在147nm真空紫外光激发下产生对应于Eu3 的5D0→7FJ(J=1,2,3,4)跃迁的590和613 nm强发射峰;MgO-Y2O3-B2O3:Eu中Sr的引入使材料体系在147 nm附近的吸收和在613 nm附近的发射获得明显增强;MgO-Y2O3-B2O3:Tb的真空紫外激发谱除在147 nm附近的基质吸收外,还有对应于Tb3 的4f75d→4f8跃迁位于170,178,195,204,225 nm左右的一组谱峰,两者相互叠加使得材料在真空紫外区(120～220 nm)内都有很好的吸收.     

激光偏振参量对光场感生电离电子碰撞机制等离子体电离参量的影响

以基于光场感生电离电子碰撞机制的类钯氙系统为例，计算并讨论了不同抽运激光偏振对等离子体的电离速率、阈值激光强度、电子在激光场中的剩余能量、各电荷态相对集居数、初始电子能量分布等电离参量的影响，计算结果表明，在相同的激光功率密度下，激光偏振对类钯氙41.8nm4d^95d^1S0-4d^95p^1P1跃迁的X射线激光放大影响很大，圆偏振激光抽运更有利于类钯氙41.8nm4d^95d^1S0-4d^95p^1P1跃迁的X射线激光放大的实现。     

γ-Ca_2SiO_4∶Ce~(3+),Al~(3+)荧光粉的合成与发光性能研究

采用高温固相法制备了一系列γ-Ca_2SiO_4∶x Ce~(3+),y Al~(3+)黄色荧光粉,通过X射线衍射仪、扫描电镜、激光粒度仪、荧光光谱仪对荧光粉的结构、形貌和光学性能进行了表征。结果表明,1 200~1 300℃温度下生成β-Ca_2SiO_4,在1 350~1 500℃下生成γ-Ca2SiO_4,Al~(3+)和Ce~(3+)的掺入未改变Ca2SiO_4的结构。在1 450℃下合成的γ-Ca_2SiO_4∶0.5%Ce~(3+),4%Al~(3+)样品的相对发光强度最强。在450 nm激发下,在565 nm处存在一个宽带发射峰,主要源于Ce~(3+)的5d→2F7/2和5d→2F5/2跃迁。荧光粉受热影响较大,在450 nm激发下,样品在475 K时的发光强度降为室温的63%。监控波长为565 nm时,Ce~(3+)的衰减曲线符合单指数衰减规律,荧光寿命为104.2 ns,与其跃迁类型和离子价态基本相符。     

原子内壳层双光子衰变的相对论效应和屏蔽效应

本文系统地计算了H原子,类H-Xe离子及Xe原子内壳层的双光子衰变速率。阐明其相对论效应和电子屏蔽效应。并与最新的实验结果和他人的理论计算结果进行了比较和分析讨论。 关键词：     

Demonstration of a collisionally excited optical-field-ionization XUV laser driven in a plasma waveguide

We describe the first demonstration of a collisionally excited optical-field-ionization laser driven within a waveguide. Lasing on the 4d(9)5d-4d(9)5p transition at 41.8 nm in Xe8+ was observed to be closely correlated to conditions under which the pump laser pulses were guided well by a gas-filled capillary discharge waveguide. Simulations of the propagation of the pump laser radiation show that gain was achieved over essentially the whole 30 mm length of the waveguide.     

BaMoO4:Eu3+发光材料的制备及光谱特性研究

利用高温固相法制备了BAMoO4:Eu3+发光材料,采用X射线衍射(XRD)和荧光光谱仪对样品进行测试.结果表明,在800℃时得到BaMoO4纯相,属四方晶系.激发光谱由一个宽带和处在350nm后的若干个线状谱组成,宽带归属于Eu3+-O2-电荷迁移吸收带(CT),线状谱属于Eu3+的f--f激发跃迁吸收.发射光谱由5D0-7F1(591 nm),5D0-7F2(615 nn),5D0-7F3(654 nm)和5D0-7F4(702 nm)四组峰组成,其红光5D0-7F2辐射跃迁发射最强,对应EU3+的电偶极跃迁.     

CaLuBO4∶Tb^3+荧光粉的制备及发光性质

采用高温固相反应法合成了不同Tb^3+掺杂浓度的CaLuBO4∶xTb^3+荧光粉,研究了样品的晶体结构和发光性质。在紫外光激发下,样品的发射光谱由Tb3+离子的5D3→7FJ(J=6,5,4)和5D4→7FJ′(J′=6,5,4,3)特征发射组成,其中位于545 nm和554 nm附近的5D4→7F5跃迁发射强度最大。荧光粉的激发光谱是由位于紫外区的Tb3+的4f-5d和f-f跃迁构成的。研究了Tb3+浓度对样品发光性质的影响。测量并分析了CaLuBO4∶xTb^3+荧光粉的5D3能级和5D4能级荧光寿命。结果表明,CaLuBO4∶xTb^3+是一种适于紫外激发的新型黄绿光荧光粉。     

Bi3+和Eu3+在Ca2SiO4中的发光和能量传递

用高温固态反应合成了Ca2SiO4:Bi3+,Ca2SiO4:Eu3+和Ca2SiO4:Eu3+,Bi3+发光体。讨论了不同掺杂量和掺杂种类时Bi3+对Eu3+的5D0-7F1,5D0-7F2发射的影响规律。实验发现,Ca2SiO4:Bi3+在紫外线激发下发出明亮的蓝色光,Ca2SiO4:Eu3+,Bi3+中的Bi3+能将激发能传递给Eu3+,使Eu3+的5D0-7F1和5D0-7F2两种跃迁都大大加强,同时,Bi3+也发出鲜艳的紫色光。