高能质子引起器件单粒子效应的研究方法

简略介绍了高能质子在半导体芯片中引起单粒子效应的实验测量和理论分析方法,包括核反应分析方法、半经验方法,介绍了质子和重离子翻转截面间的关系,并用重离子实验数据预测器件在质子环境下的翻转率. This article introduces briefly the experimental and theoretical methods that have been used to study high energy proton induced single event effect in semiconductor devices. The theoretical methods including nuclear reaction analysis method and semi empirical method are presented. The relationship of upset cross section between proton and heavy ions is described. Finally, on orbit proton upset rates are predicted by using the heavy ion test data.     

半导体器件单粒子效应的加速器模拟实验

着重描述了应用加速器开展半导体器件的单粒子效应实验研究的方法。采用金箔散射法可以降低加速器束流几个量级,从而满足半导体器件单粒子效应实验的要求。研制的弱流质子束流测量系统和建立的质子注量均匀性测量方法解决了质子注量的准确测量问题。实验测得静态随机存取存储器的质子单粒子翻转截面为10-7 cm2·bit-11量级,单粒子翻转重离子LET阈值为4～8MeV·cm2/mg,重离子单粒子翻转饱和截面为10-7 cm2·bit-1量级。     

半导体器件单粒子效应的加速器模拟实验

 着重描述了应用加速器开展半导体器件的单粒子效应实验研究的方法。采用金箔散射法可以降低加速器束流几个量级，从而满足半导体器件单粒子效应实验的要求。研制的弱流质子束流测量系统和建立的质子注量均匀性测量方法解决了质子注量的准确测量问题。实验测得静态随机存取存储器的质子单粒子翻转截面为10^-7 cm²·bit^-11量级，单粒子翻转重离子LET阈值为4～8MeV·cm²/mg，重离子单粒子翻转饱和截面为10^-7 cm²·bit^-1量级。     

深亚微米SRAM质子单粒子翻转实验研究

宇航半导体器件运行在一个复杂的空间辐射环境中,质子是空间辐射环境中粒子的重要组成部分,因而质子在半导体器件中导致的辐射效应一直受到国内外的关注。利用兰州重离子加速器(Heavy Ion Research Facility In Lanzhou) 加速出的H2 分子打靶产生能量为10 MeV 的质子,研究了特征尺寸为0.5/0.35/0.15 μm体硅和绝缘体上硅(SOI) 工艺静态随机存储器(SRAM) 的质子单粒子翻转敏感性,这也是首次在该装置上开展的质子单粒子翻转实验研究。实验结果表明特征尺寸为亚微米的SOI 工艺SRAM器件对质子单粒子翻转不敏感,但随着器件特征尺寸的减小和工作电压的降低,SOI 工艺SRAM器件对质子单粒子翻转越来越敏感;特征尺寸为深亚微米的体硅工艺SRAM器件单粒子翻转截面随入射质子能量变化明显,存在发生翻转的质子能量阈值,CREME-MC模拟结果表明质子在深亚微米的体硅工艺SRAM器件中通过质子核反应导致单粒子翻转。Microelectronic devices are used in a harsh radiation environment for space missions. Among all the reliability issues concerned, proton induced single event upset (SEU) is becoming more and more noticeable for semiconductor components exposed on space. In this work, an experimental research of SEU induced by 10 MeV proton for static random access memory (SRAM) of 0.5, 0.35 and 0.15 m feature size is carried out on HeavyIon Research Facility in Lanzhou for the rst time. The experimental results show that proton induced SEUs in submicron and deep-submicron (SRAMs) are dominated by secondary ions generated by proton nuclear reaction events. The silicon-on-insulator SRAMs characters natural radiation-hardened SEU by proton. For the deep-submicron bulk-silicon technology SRAM, the proton SEU cross section is closely related to the proton energy and there is a threshold energy for the SEU occurrence by proton indirect ionization. CREME-MC simulation indicates that the SEU events in deep-submicron SRAM are induced by the proton nuclear reaction.     

质子与金属布线层核反应对微纳级静态随机存储器单粒子效应的影响分析

金属布线层对微纳级静态随机存储器(static random access memory, SRAM) 质子单粒子效应敏感性的影响值得关注. 利用Geant4针对不同能量(30 MeV, 100 MeV, 200 MeV和500 MeV)的质子与微纳级SRAM器件的核反应过程开展计算, 研究了核反应次级粒子的种类、线性能量传输值(linear energy transfer, LET)及射程情况, 尤其对高LET 值的核反应次级粒子及其射程开展了详细分析. 研究表明, 金属布线层的存在和质子能量的增大为原子序数大于或等于30的重核次级粒子的产生创造了条件, 器件体硅区中原子序数大于60的重核离子来源于质子与钨材料的核反应, 核反应过程中的特殊作用机理会生成原子序数在30至50之间的次级粒子, 且质子能量的增大有助于这种作用机理的发生, 原子序数在30至50之间的次级粒子在器件体硅区的LET值最大约为37 MeV·cm²/mg, 相应射程可达到几微米, 对于阱深在微米量级的微纳级SRAM器件而言, 有引发单粒子闩锁的可能. 研究结果为空间辐射环境中宇航器件的质子单粒子效应研究提供理论支撑.     

纳米静态随机存储器低能质子单粒子翻转敏感性研究

针对65, 90, 250 nm三种不同特征尺寸的静态随机存储器基于国内和国外质子加速器试验平台, 获取了从低能到高能完整的质子单粒子翻转截面曲线. 试验结果表明, 对于纳米器件1 MeV以下低能质子所引起的单粒子翻转截面比高能质子单粒子翻转饱和截面最高可达3个数量级. 采用基于试验数据和器件信息相结合的方法, 构建了较为精确的复合灵敏体积几何结构模型, 在此基础上采用蒙特卡罗方法揭示了低能质子穿过多层金属布线层, 由于能量岐离使展宽能谱处于布拉格峰值的附近, 通过直接电离方式将能量集中沉积在灵敏体积内, 是导致单粒子翻转截面峰值的根本原因. 并针对某一轨道环境预估了低能质子对空间质子单粒子翻转率的贡献.     

以太网芯片重离子单粒子效应试验

为评估和研究工业以太网芯片KSZ8851-16MLLJ在空间环境中的适应性,利用重离子源对芯片进行了单粒子试验。根据以太网芯片的结构和功能制订了单粒子实验方案,得出了实验数据,并对实验数据进行了整理和研究。实验和研究表明:工业以太网芯片KSZ8851-16MLLJ具有一定的抗单粒子辐射能力;在不同网络传输条件下,发生单粒子翻转的机率也不相同;在持续的单粒子辐射下,以太网芯片会发生电流阶跃,第二次电流阶跃时产生单粒子锁定,在工程应用中可以利用电流阶跃监测芯片的辐射水平。     

以太网芯片重离子单粒子效应试验

为评估和研究工业以太网芯片KSZ8851-16MLLJ在空间环境中的适应性,利用重离子源对芯片进行了单粒子试验。根据以太网芯片的结构和功能制订了单粒子实验方案,得出了实验数据,并对实验数据进行了整理和研究。实验和研究表明：工业以太网芯片KSZ8851-16MLLJ具有一定的抗单粒子辐射能力;在不同网络传输条件下,发生单粒子翻转的机率也不相同;在持续的单粒子辐射下,以太网芯片会发生电流阶跃,第二次电流阶跃时产生单粒子锁定,在工程应用中可以利用电流阶跃监测芯片的辐射水平。     

高能质子单粒子翻转效应的模拟计算

在分析质子与硅反应的基础上,提出质子单粒子翻转截面理论计算模型,建立了模拟计算方法.计算得到了不同能量的高能质子在存储单元的灵敏区内沉积的能量.指出高能质子主要通过与硅反应产生的重离子在存储单元灵敏区内沉积能量,产生电荷,导致单粒子效应,得到了单粒子翻转截面与质子能量以及随临界电荷变化的关系.并将计算得到的单粒子翻转截面与实验数据进行了比较.     

利用加速器提供的重离子进行SRAM单粒子效应研究

报导了利用北京大学串列静电加速器提供的重离子对两类静态随机存储器进行单粒子效应的实验和测量。给出了两类静态随机存储器的单粒子效应翻转戴面随线性能量转移值的变化关系曲线。     

Microscopic investigation of the 12C + 12C interaction

The ¹²C + ¹²C system is studied in the framework of the generator coordinate method. Each ¹²C nucleus is described by a closed $\text{p}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$ subshell. Phase shifts and resonances are determined for several effective two-body interactions involving a spin-orbit term. The existence and properties of simple local equivalent potentials for the ¹²C + ¹²C collision are discussed. The ¹²C + ¹²C system is too light to be well described by potentials independent of the angular momentum or weakly dependent on it.     

The sub-Coulomb 12C + 12C resonances in a microscopic 12C+12C,α+20Ne, 8Be+16O cluster basis

The low-J resonances in the Coulomb barrier region of the ¹² C+¹²C system are investigated in the framework of a microscopic cluster model basis including ¹²C+¹²C, α+ ²⁰Ne, and su8 Be+ ¹⁶O fragment decompositions. Calculations are carried out in an orthogonality condition model approximation in which Pauli-forbidden components are properly excluded from the basis but in which the interaction among cluster fragments is approximated by a local potential, obtained from a gaussian NN interaction by a folding procedure leading to both spherical and Q · Q terms. Only minor adjustments of overall strength and fall-off parameters are introduced to gain a consistent picture of the low-energy spectrum in the separate rearrangement channels. The basis includes cluster relative motion excitations with oscillator quanta from 12 to 20 and is not quite rich enough to give a detailed quantitative comparison between theory and experiment. Predicted excitation energies are too high by ~ 3 MeV and predicted ¹²C partial widths are too small to indicate a well-developed surface-peaked molecular character; but it does appear possible to identify a 5 MeV region as the potential seat of the 0⁺, 2⁺, 4⁺ resonances. The number and approximate spacing of the resonance fine structure components are in agreement with experiment.     

Intermediate resonance of inelastic 12C + 12C scattering

The intermediate resonances observed in the inelastic ¹²C + ¹²C cross sections to the single and mutual 2₁⁺(4.43 MeV) excitations and the single 3₁^? (9.64 MeV) excitation are studied by the coupled-channel method with the use of the coupling interaction derived by the folding procedure between ¹²C and ¹²C. It is shown that the model is successful in reproducing the gross structures of the inelastic cross sections and especially the correlated resonance energies of the inelastic channels. The inelastic resonances are shown to be due to the molecular resonances in an adiabatic potential between two ¹²C, which reproduces correctly the coupled channel resonances.     

Systematics of back angle 12C scattering — the 12C + 20Ne and 12C + 24Mg systems

The back angle scattering of ²⁰Ne and ²⁴Mg ions from ¹²C display structured excitation functions and oscillatory angular distributions. These measurements bridge the gap between the previously studied ¹²C + ¹⁶O and ¹²C + ²⁸Si systems.     

Statistical fluctuations and compound elastic scattering for 12C(12C, 12C)12C and 16O(16O, 16O)16O

The difference between the observed fluctuations in the elastic excitation functions for carbon-carbon and oxygen-oxygen scattering, just above the Coulomb barrier, is interpreted in terms of the compound nucleus model.     

Spins of resonances in the 12C + 12C system

By measuring angular distributions we have assigned J^π = 6⁺ to a resonance at E_c.m. = 7.50 ±0.05 MeV in the ¹²C + ¹²C system.     

Alignment and resonances in 12C+12C inelastic scattering

Using the out-of-plane γ-ray particle coincidence method we have measured the spin alignment P_zz of excited ¹²C(2⁺) nuclei from ¹²C+¹²C inelastic scattering in the energy range 16 MeV ? E_cm ? 33 MeV.P_zz varies strongly as a function of energy and angle. The correlation of resonant structures in the cross section with maxima of the alignment is particularly clear in mutual inelastic scattering and in θ_cm = 90° single inelastic scattering.     

194Pt(12C, 12C′) reaction and the triaxial-rotor model

Elastic and inelastic scattering differential cross sections for the ¹⁹⁴Pt(¹²C, ¹²C′) reaction at a bombarding energy of 78 MeV have been measured. Data have been obtained for 0⁺, 2⁺, 4⁺, and 2^+′, states in ¹⁹⁴Pt. The data have been analyzed using a rigid asymmetric-rotor model in coupled-channels reaction calculations. It is found that satisfactory fits to all data can be obtained but only if the hexadecapole deformation is included in the asymmetric-rotor model.     

Nuclear charge radii of the carbon isotopes 12C, 13C and 14C

Muonic X-ray energies of the K-series of the carbon isotopes ¹³C and ¹⁴C have been determined relative to ¹²C. For the first time, muonic atom measurements using radioactive ¹⁴C have been performed. Model-independent equivalent nuclear charge radii R_k,α and their differences have been deduced. The R_k,α radii increase by 10(14) and 32(11) am respectively with the filling of the $\text{1}\text{p}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$ neutron Subshell. The results are compared with recent elastic electron scattering data. The former natural carbon data have been reanalysed using a new value for the nuclear polarization. In terms of the rms charge radius, we then obtain $\text{〈r}{}^2\text{〉}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{= 2.472(16)}\text{fm}$ for the ¹²C isotope.     

Low energy fusion of 12C + 12C and 16O + 16O systems

The adiabatic time-dependent Hartree-Fock method (ATDHF) is applied to the calculation of low energy fusion of ¹²C + ¹²C and ¹⁶O + ¹⁶O systems. The energy dependence of the results is in good agreement with experiment, while the order of magnitude is not correct. It is shown that the dynamical effects included in ATDHF are very important and cannot be neglected at the energies of astrophysical interest.