UV absorption of RbAg4I5-RE (Sm, Yb) thin-film systems

UV spectra of samples prepared by vacuum deposition of Sm and Yb thin films on 100–200-nm thick films of the RbAg₄I₅ solid electrolyte (SE) at 300–350 K contain strong absorption bands peaking at about 4.3 and 5.0 eV. After deposition of ～5 nm of Sm, the ionic conductivity σ of the samples decreases from σ ₀ to ≈0.9 σ ₀, and the SE lattice parameter, from 11.24 to ≈11.15 Å, with the x-ray reflection halfwidth increasing from 0.5 to 0.8°. Further growth of Sm concentration in the samples changes the x-ray diffraction pattern, the absorption at 4.3 and 5.0 eV increases, a new absorption edge forms at 3.8 eV, and σ decreases down to ～10^?2 σ ₀. It is conjectured that the strong UV absorption bands in heavily defected silver halides of the RbAg₄I₅-Sm(Yb) system is genetically related to the 4d ¹⁰→4d ⁹5s electronic transitions in free Ag⁺ ions.     

UV absorption of thin-film RbAg4I5-RE (Sm, Yb) systems

UV-spectra of samples obtained by vacuum deposition of RE (Sm, Yb) thin films onto films of the solid electrolyte RbAg₄I₅ (300 – 350 K, thickness 100 – 200 nm) exhibit bands of strong absorption with maxima at 4.3 and 5.0 eV. After the deposition of Sm (≈ 5 nm), the ionic conductivity σ of the samples decreases to ≈ 0.9 σ₀ and the lattice parameter from 11.24 to 11.15 Å. The halfwidth of X-ray reflections increases from 0.5 to 0.8⁰. Further increase of the concentration of Sm in the samples changes the X-ray diffraction pattern. Under such conditions, the absorption in the regions of 4.3 and 5.0 eV further increases; a new single edge of absorption at 3.8 eV appears and σ declines to ≈10^?2 σ₀. It is supposed that a genetic relation exists between the UV-bands of strong absorption in the highly defective silver-halides of the RbAg₄I₅-RE system and the electronic transitions 4d¹⁰ ?4d⁹ 5s in free Ag⁺ ions.     

Study of the phase composition of AgI microcrystals by exciton spectroscopy and differential scanning calorimetry

Differential absorption spectra of RbAg₄I₅ have been measured in the exciton absorption region of AgI within the temperature range 27–250 °C. In the same temperature range, the temperature behavior of the heat capacity of RbAg₄I₅, Rb₂AgI₃, and KAg₄I₅ have been obtained by differential scanning calorimetry. An analysis of the results suggests that, in AgI microcrystals less than r _cr in size, the upper boundary for stability of the low-temperature β modification is higher by several tens of degrees. Fiz. Tverd. Tela (St. Petersburg) 40, 852–854 (May 1998)     

Ionic photoconductivity of RbAg4I5 superionic crystals

A new effect of illumination on ionic conductivity and activation energy of migration of mobile Ag⁺ cations in RbAg₄I₅ superionic crystals has been detected and studied. Reversible changes in the ionic conductivity due to illumination of superionic crystals are caused by reversible changes in the structure of electronic centers caused by elastic strain around these centers. The effect of elastic deformation on the process of ionic transport and activation energy for diffusion of mobile silver cations has been studied. Photostimulated recovery of the ionic conductivity after its change due to preliminary illumination of a RbAg₄I₅ superionic crystal with light of wavelength λ≃430 nm has been detected. This recovery of the ionic conductivity is due to excitation of centers in complexes generated by previous illumination of tested samples. Zh. éksp. Teor. Fiz. 112, 698–706 (August 1997)     

Non-steady-state photo-EMF in nanostructured GaN and polypyrrole within porous matrices

We report an experimental investigation of the non-steady-state photoelectromotive force in nanostructured GaN within porous glass and polypyrrole within chrysotile asbestos. The samples are illuminated by an oscillating interference pattern created by two coherent light beams and the alternating current is detected as a response of the material. Dependences of the signal amplitude versus temporal and spatial frequencies, light intensity, and temperature are studied for two wavelengths λ=442 and 532 nm. The conductivity of the GaN composite is measured: σ=(1.1–1.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=442 nm, I ₀=0.045–0.19 W/cm², T=293 K) and σ=(3.5–4.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=532 nm, I ₀=2.3 W/cm², T=249–388 K). The diffusion length of photocarriers in polypyrrole nanowires is also estimated: L _D=0.18 μm.     

Photovoltaic activity in a ZnSe/PEO–chitosan blend electrolyte junction

Thin films of ZnSe and PEO–chitosan blend polymer doped with NH₄I and iodine crystals were prepared to form the two sides of a semiconductor electrolyte junction. ZnSe was electrodeposited on indium tin oxide (ITO) conducting glass. The polymer is a blend of 50 wt% chitosan and 50 wt% polyethylene oxide. The polymer blend was complexed with ammonium iodide (NH₄I), and some iodine crystals were added to the polymer–NH₄I solution to provide the I⁻/I³⁻redox couple. The room temperature ionic conductivity of the polymer electrolyte is 4.32 × 10⁻⁶ S/cm. The polymer film was sandwiched between the ZnSe semiconductor and an ITO glass to form a ZnSe/polymer electrolyte/ITO photovoltaic cell. The open circuit voltage (V _oc) of the fabricated cells ranges between 200 to 400 mV and the short circuit current between 7 to 10 μA.     

Impact of ethylene carbonate on electrical properties of PVA/(NH4)2SO4/H2SO4 proton-conductive membrane

A new proton-conductive membrane (PCM) based on poly (vinyl alcohol) and ammonium sulfate (NH₄)₂SO₄ complexed with sulfuric acid and plasticized with ethylene carbonate (EC) at different weight percent were prepared by casting technique. The structural properties of these electrolyte films were examined by XRD studies. The XRD patterns of all the prepared polymer electrolytes reveal the amorphous nature of the films. ac conductivity and dielectric spectra of the electrolyte were studied with changing EC content from weight 0.00 to 0.75 g. A maximum conductivity of 7.3 × 10⁻⁵ S cm⁻¹ has been achieved at ambient temperature for PCM containing 0.25 g of ethylene carbonate. The electrical conductivity σ, dielectric constant ε′ and dielectric loss ε″ of PCM in frequency range (100 Hz to 100 KHz), and temperature range (300–400 K) were carried out. Measurement of transference number was carried out to investigate the nature of charge transport in these polymer electrolyte films using Wagner’s polarization technique. Transport number data showed that the charge transport in these polymer electrolyte systems was predominantly due to ions. The electrolyte with the highest electrical conductivity was used in the fabrication of a solid-state electrochemical cell with the configuration (Mg/PCM/PbO₂). Various cell parameters ldensity, and current density were determined. The fabricated cells gave capacity of 650 μAh and have an internal resistance of 11.6 kΩ.     

Structural and electrical properties of pure and H<Subscript>2</Subscript>SO<Subscript>4</Subscript> doped (PVA)<Subscript>0.7</Subscript>(NaI)<Subscript>0.3</Subscript> solid polymer electrolyte

Solid polymer electrolytes (SPE) based on poly-(vinyl alcohol) (PVA)_0.7 and sodium iodide (NaI)_0.3 complexed with sulfuric acid (SA) at different concentrations were prepared using solution casting technique. The structural properties of these electrolyte films were examined by X-ray diffraction (XRD) studies. The XRD data revealed that sulfuric acid disrupt the semi-crystalline nature of (PVA)_0.7(NaI)_0.3 and convert it into an amorphous phase. The proton conductivity and impedance of the electrolyte were studied with changing sulfuric acid concentration from 0 to 5.1 mol/liter (M). The highest conductivity of (PVA)_0.7(NaI)_0.3 matrix at room temperature was 10⁻⁵ S cm⁻¹ and this increased to 10⁻³ S cm⁻¹ with doping by 5.1 M sulfuric acid. The electrical conductivity (σ) and dielectric permittivity (ε′) of the solid polymer electrolyte in frequency range (500 Hz–1 MHz) and temperature range (300–400) K were carried out. The electrolyte with the highest electrical conductivity was used in the fabrication of a sodium battery with the configuration Na/SPE/MnO₂. The fabricated cells give open circuit voltage of 3.34 V and have an internal resistance of 4.5 kΩ.     

Reciprocity relations for the effective electrical conductivity of randomly inhomogeneous media in the fractal regime

An exact relation for the realization-averaged effective conductivities in the fractal region is found for two-dimensional randomly inhomogeneous media. It has the form {σ _e (τ,L)~× {1/σ _e (−τ,L)~⁻¹=σ _e ² (τ=0, L≫ξ), where ξ is the correlation length (the self-averaging scale), L is the size of the system, τ=(p-p _c )/p _c , and p _c is the percolation threshold. For L≫ ξ, the system is self-averaged, and the relation transforms into the Dykhne reciprocity relation, A. M. Dykhne, Zh. éksp. Teor. Fiz. 59, 110 (1970) [Sov. Phys. JETP 32, 63 (1971)] σ _e (τ)σ _e (−τ])=σ _e ² (τ=0)= σ ₁ σ ₂. A similar relation is obtained for media with an exponentially broad distribution of local conductivities, as well as for individual realizations of some deterministic structures. Zh. éksp. Teor. Fiz. 113, 1484–1490 (April 1998)     

Investigation of the excitation of metastable states of 197Pt and 197Hg in (γ, n) and (d, 2n) reactions

The isomeric ratios of the ^197m,g Pt and ^197m,g Hg yields in the respective (γ, n) reactions are measured for the first time in the energy range 8–17 MeV. The isomeric ratios σ _m/σ_g for ^197m,g Hg in the (d, 2n) reaction are measured in the energy range 8–50 MeV. The experimental data are compared with the results of theoretical calculations. The effect of the structure of low-lying states and of the yrast line on the behavior of σ _m/σ_g is revealed. __________ Translated from Yadernaya Fizika, Vol. 67, No. 5, 2004, pp. 899–905. Original Russian Text Copyright ? 2004 by Zheltonozhsky, Mazur, Bigan.     

Solid polymeric electrolyte of PVC–ENR–LiClO<Subscript>4</Subscript>

The ionic conductivity of PVC–ENR–LiClO₄ (PVC, polyvinyl chloride; ENR, epoxidized natural rubber) as a function of LiClO₄ concentration, ENR concentration, temperature, and radiation dose of electron beam cross-linking has been studied. The electrolyte samples were prepared by solution casting technique. Their ionic conductivities were measured using the impedance spectroscopy technique. It was observed that the relationship between the concentration of salt, as well as temperature, and conductivity were linear. The electrolyte conductivity increases with ENR concentration. This relationship was discussed using the number of charge carrier theory. The conductivity–temperature behaviour of the electrolyte is Arrhenian. The conductivity also varies with the radiation dose of the electron beam cross-linking. The highest room temperature conductivity of the electrolyte of 8.5 × 10⁻⁷ S/cm was obtained at 30% by weight of LiClO₄. The activation energy, E _a and pre-exponential factor, σ _o, are 1.4 × 10⁻² eV and 1.5 × 10⁻¹¹ S/cm, respectively.     

Transport and dielectric properties of thin polycrystalline CoO films

Transport and dielectric properties of polycrystalline CoO films were studied as functions of the applied field, frequency and temperature. TheI–V plots showed that the Poole-Frenkel field emission mechanism is responsible for conduction at fields>10⁵ V/cm. The ac conductivity σ(ω), the imaginary part of the dielectric constantε ₂, and tan δ plots as functions of frequency revealed three dispersion regions. The σ(ω) andε ₂ frequency dependence indicates a non-adiabatic hopping of charge carriers at low frequencies and adiabatic hopping at high frequencies. The activation energy of a dielectric oscillator is 0.15 eV. Work supported by the Office of Naval Research.     

Macrostructure of high-temperature superconducting YBaCuO thin films grown by laser ablation

The superconducting parameters and macrostructure of YBaCuO thin films grown by laser ablation on SrTiO₃ substrates are influenced by the substrate temperature during growth. In a study of this influence it is found that the macrostructure has significant bearing on the superconducting parameters of the films and on the critical current, in particular. For J _c⩽10⁵ A/cm² the films have a distinctly pronounced granular structure, while for J _c>10⁵ A/cm² the films do not have any kind of block structure. Zh. Tekh. Fiz. 68, 48–51 (February 1998)     

Temperature dependences of the high-field magnetization of dilute frustrated ferrimagnetic spinels

Results are presented of an investigation of the magnetic properties of dilute frustrated ferrimagnetic spinels Li_0.5Fe_2.5−x Ga_xO₄ (x=0.8–1.2), which characterize the main parameters of the ferrimagnetic state and provide evidence of local violation of collinear spin ordering and frustrations. In particular, measurements were made of the concentration dependences of the magnetic moment n ₀(x) and the Curie point T _c (x), the magnetization isotherms σ _T (H) at T=4.2 K and H⩽10 kOe, and also the low-and high-field magnetization polytherms σ _H (T). It was established that for x⩾0.8 in fields exceeding the technical saturation field H _s ∼2 kOe, the temperature dependences of the high-field magnetization σ _H (T) between 4.2 and 230 K cannot be described by the Bloch T ^3/2 law whereas this law is satisfied for undiluted Li spinel (x=0). Over the entire temperature range (4.2–230 K) the experimental curves σ _H (T) may be approximated by σ _H (T)=σ ₀(1−AT ^3/2 − BT ^5/2) for x=0.8–1.0 and σ _H (T)=σ ₀[1−CT ^3/2exp(μ(H−H ₀)/k _B T)] for x=1.1, 1.2, where μH ₀∼15 K is the internal field produced by competition between exchange interactions and frustrations. Fiz. Tverd. Tela (St. Petersburg) 40, 1075–1079 (June 1998)     

Electrical transport properties of CuWO4

The temperature dependence of the electrical conductivity, thermoelectric power and dielectric constant of the antiferromagnetic CuWO₄ have been studied in the temperature range 300–1000 K. The conductivity results can be summarised by the equations σ_I=6.31 × 10⁻³ exp (−0.29 eV/kT) ohm⁻¹ cm⁻¹ in the temperature range 300–600 K and σ_II=3.16 × 10⁵ exp (−1.48 eV/kT) ohm⁻¹ cm⁻¹ between 600 K and 1000 K. The thermoelectric power can be expressed byθ=[− 1.25 (10³/T) + 3.9] mV/K. Initially dielectric constant increases slowly but for high temperatures its increase is fast.     

A correction method for thermally lowered fission track ages

Abstract

Onset of electric current has been detected on illuminating the near–contact regions of RbAg₄I₅ crystals. The spectral and temperature characteristics of this current have been studied. A method is proposed for studying the spectrum of electronic states in the α-phase of the RbAg₄I₅ crystal. The dependence of the magnitude of the current and its spectral characteristics on the particular region of the RbAg₄I₅ crystal which is exposed to the light was used for the analysis of the variations in the distribution of defects along the length of the sample and the processes which occur near the electrode-(solid electrolyte) junctions.     

Distribution of 90° domain reorientations in lead titanate zirconate piezoceramic under longitudinal compression

A static model of a critically polarized ceramic is used to analyze the behavior of the piezocoefficient d ₃₃ of lead titanate zirconate ceramic exposed to a longitudinal compressive stress σ and a quantitative analysis is made of the 90° and 180° domain reorientations. It is shown that for TsTG-83G ceramic a 180° antiparallel domain structure forms at compressive stresses σ>10⁸ N/m². Zh. Tekh. Fiz. 69, 46–49 (June 1999)     

Indirect determination of the ratio R=σL/σT at small x from HERA data

The value of the deep inelastic scattering cross-section ratio R=σ _L /σ _T is found in the range 10⁻⁴⩽x⩽10⁻² from F ₂ and dF ₂/d ln Q ² HERA data using very simple relations based on perturbative QCD. Zh. éksp. Teor. Fiz. 112, 32–36 (July 1997) Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.     

Nature of conduction via impurities in uncompensated silicon

The static conductivity σ(E) and photoconductivity (PC) at radiation frequencies ħω=10 and 15 meV in Si doped with shallow impurities (density N=10¹⁶−6×10¹⁶ cm⁻³, ionization energy ε₁≃45 meV) with compensation K=10⁻⁴−10⁻⁵ in electric fields E=10–250 V/cm are measured at liquid-helium temperatures T. Special measures are taken to prevent the high-frequency part of the background radiation (ħω>16 meV) from striking the sample. It is found that the conductivity σ(E) is due to carrier motion along the D ⁻ band, which is filled with carriers under the influence of the field E. In fields E<E _q (E _q ≃100–200 V/cm) the carrier motion consists of hops along localized D ⁻ states in a 10–15 meV energy band below the bottom of the free band (energy ε=ε₁); for E>E _q carriers drift along localized D ⁻ states with energy ε∞ε₁−10 meV. An explanation is proposed for the threshold behavior of the field dependence of the photo-and static conductivities. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 232–236 (25 August 1997)