无机半导体纳米晶光学性质的设计、调控及其生物医学应用

半导体纳米晶由于其丰富的能带结构和光学性质,在光电器件和生物医学应用等领域展现出了广阔的应用前景,且在过去的几十年中得到了广泛关注.因此,对其光学性质进行理性设计和精确调控具有重要的研究意义.本文简要综述了本研究组近年来在不同能带隙的无机半导体纳米晶的可控制备技术以及利用DNA纳米技术和蛋白质自组装手段构建具有特异光学性质的纳米结构等方面的相关研究工作,最后对这些纳米晶和纳米结构的独特光学性质及其在生物医学领域的应用研究进行了总结.     

天然杂质对闪锌矿电子结构和半导体性质的影响

采用密度泛函理论系统研究了分别含有十四种天然杂质的闪锌矿的电子结构,并讨论了这十四种杂质对闪锌矿半导体性质的影响.研究结果表明,锰、铁、钴、镍、铜、镉、汞、银、铅、锑杂质的存在使闪锌矿的带隙变窄,导致吸收带边增大.除了镉和汞杂质外,其余杂质的存在均导致费米能级向高能级方向移动,并且在闪锌矿禁带中产生了杂质能级.铁、镓、锗、铟、锡、锑杂质使闪锌矿的半导体类型由p型变为n型;而锰、钴、镍、铜、镉、汞、银、铅杂质对闪锌矿的半导体类型没有影响.铜杂质使闪锌矿由直接带隙变为间接带隙半导体.     

胶体半导体纳米晶的能带宽调控新方法

由于量子限域效应,半导体纳米晶的能带宽随粒子大小而改变。单纯依靠改变纳米晶大小来调控能带宽将引起许多技术和应用上的不便。本文对胶体半导体纳米晶的能带宽调控新概念和新的合成途径,包括近年来发展起来的通过采用合金纳米晶、反转Type－I及Type－II核/壳结构等进行了综述,并对各种途径的优缺点进行了描述。     

合成半导体胶体纳米晶的新方法

半导体纳米晶由于其独特的光学和电学性质在光学器件、医疗诊断、激光等方面有了越来越重要的应用.本文介绍了胶体半导体纳米晶合成技术的一些最新进展。     

PbTiO3纳米晶电子结构及铁电性理论研究

采用密度泛函方法,以镶嵌势能的团簇模型对PbTiO₃纳米晶电子结构进行了量子化学计算研究,得到簇模型中键长、键级及净电荷之间的变化规律.布居分析和态密度计算结果表明,O原子的2p轨道、Ti原子的3d轨道、Pb原子的6s轨道和6p轨道之间的相互作用是四方相PbTiO₃纳米晶体出现铁电性的重要原因,并计算得到不同晶粒PbTiO₃纳米晶的偶极矩和自发极化强度.     

四组分纳米结构复合电极的制备及电化学性能

在5 mmol/L H2 PtCl6的稀硫酸溶液中,采用循环伏安法(CV),扫描电位为～0.2～0.6V和0.0～0.6v,分别扫描30和15循环,在碳纳米管/纳米TiO2-聚苯胺复合膜上实现了Pt纳米粒子的高度有效分散,得到多壁碳纳米管/纳米TiO2-聚苯胺载铂四组分纳米结构复合电极,通过CV法和计时电位法并结合扫描电镜对复合电极的电化学性质和结构进行表征,研究了复合电极对葡萄糖的电催化氧化性能.结果表明,该复合电极对葡萄糖的电氧化有高催化活性,具有性能稳定、重现性好、抗毒化作用强、能耐高温、易保存且使用寿命较长的优点.     

荧光素及其衍生物电子结构与光谱性质的理论研究

用ZINDO、从头算和密度泛函理论方法研究荧光素及其衍生物的电子结构和光谱性质.计算结果表明母体双阴离子荧光素分子(1)与单(2)、双(3)取代形成的单阴离子荧光素分子的基态电子结构不同,而且1与2和3的基态和激发态的电子转移方向相反.体系1~3的最大吸收波长依次发生红移,与实验结果相符合.     

无膦方法合成高质量CdSe纳米晶及其光学性质

以合成的十碳酸镉作为Cd前驱体, 十八烯作为单质硒溶剂, 并添加十八胺作为活性剂, 在无三丁基膦或三辛基膦参与的条件下, 以较低温度制备了具有闪锌矿结构的高质量的CdSe纳米晶. 利用吸收光谱、荧光光谱(PL)、X射线衍射(XRD)、透射电镜(TEM)对不同反应时间得到的CdSe纳米晶进行形貌和光谱性质表征. 实验结果表明, 采用该无膦法只需调控反应时间就可得到粒径均一、分散性好的CdSe纳米晶, 其荧光波长可覆盖470-630 nm的可见光区, 而荧光峰半高宽则始终保持在24-30 nm之间并具有较高的荧光量子产率(535 nm处大于60%). 最后, 对CdSe纳米晶量子产率随反应时间变化的原因进行了分析.     

半导体CdTe纳米晶的合成及其光学性能

半导体CdTe纳米晶的合成及其光学性能;CdTe;纳米晶;光学性能     

Luminescence,Plasmonic, and Magnetic Properties of Doped Semiconductor Nanocrystals

Introducing a few atoms of impurities or dopants in semiconductor nanocrystals can drastically alter the existing properties or even introduce new properties. For example, mid-gap states created by doping tremendously affect photocatalytic activities and surface controlled redox reactions, generate new emission centers, show thermometric optical switching, make FRET donors by enhancing the excited state lifetime, and also create localized surface plasmon resonance induced low energy absorption. In addition, researchers have more recently started focusing their attention on doped nanocrystals as an important and alternative material for solar energy conversion to meet the current demand for renewable energy. Moreover, the electrical and magnetic properties of the host are also strongly altered on doping. These beneficial dopant-induced changes suggest that doped nanocrystals with proper selections of dopant–host pairs may be helpful for generating designer materials for a wide range of current technological needs. How properties relate to the doping of a variety of semiconductor nanocrystals are summarized in this Review.     

C36填充单壁碳纳米管的结构和电子性质

The structures and electronic properties for C36 encapsulated in four single-wall armchair carbon nanotubes (C36@(n,n), n=6-9) were calculated using ab initio self-consistent field crystal orbital method based on density functional theory. The calculations show that the interwall spacing between the carbon nanotube and C36 plays an important role in the stabilities of resultant structures. The optimum interwall spacing is about 0.30 nm and the tubes can be considered as inert containers for the encapsulated C36. The Fermi levels and relative position of energy bands also have something to do with the interwall spacing. The shifts of Fermi level and C36-derived electron states modulate the electron properties of these structures. The extra electrons fill the bands of C36@(8,8) with the optimum interwall spacing almost in a rigid-band manner.     

Electrochemical Survey: The Effect of the Cage Size and Structure on the Electronic Structures of a Series of Ytterbium Metallofullerenes

The electrochemical properties of a series of metallofullerenes with different cages, namely, Yb@C₇₄(II), Yb@C₇₆(I, II), Yb@C₇₈, Yb@C₈₀, Yb@C₈₂(I, II, III), and Yb@C₈₄(II, III, IV), have been systematically investigated by cyclic and differential pulse voltammetry experiments for the first time. This article discusses the electronic structures of these metallofullerenes based on the results from these experiments. From previous electrochemical work and the above discussion, it is concluded that the nondegenerate LUMO is a common characteristic of the electronic structures of the higher fullerenes and monometallofullerenes. In addition, the effect of the cage on the electronic structure and properties of the metallofullerene is estimated from the plot of the reduction potential versus the carbon number of the metallofullerene. This estimation shows that usually the electronic structure and properties of the metallofullerene vary with cage size and structure. The cage structure is of particular importance for determining the electronic structure and properties. Moreover, an explanation concerning the abundance and stability of C₈₂‐based trivalent monometallofullerenes is given from an electronic structural standpoint.     

Theoretical Study on the Structural and Electronic Properties of Thiocarbamide Hydrochloride

In the present paper, the electronic band structure, density of states （DOS）, and projected density of states （PDOS） analysis of thiocarbamide hydrochloride are reported. Calculations of the electronic properties have been carried out on the basis of fully self-consistent pseudopotential method using DFT. The results show that near the Fermi level, more prominent densities of states are seen between -8 eV and -6 eV in the valence band mainly due to the Cl-3p, N-2p and S-3p orbitals.     

Ru掺杂SnO2半导体固溶体的电子结构研究

运用基于密度泛函理论的第一性原理方法,建立了SnO₂以及不同比例Ru掺杂的SnO₂超胞模型,在对其进行几何优化后计算了Sn_1-xRu_xO₂(x=0,1/16,1/12,1/8,1/6,1/4,1/2)半导体的电子结构,并讨论了其晶格参数、电荷密度、能带结构和态密度(包括分态密度)等性质。结果表明,掺杂后,晶格参数随掺杂量的增加线性减小,与实验值的偏差在4%以内;掺杂后,在费米能级处可以提供更多的填充电子,使得电子跃迁至导带更容易,固溶体的导电性增强。为Sn_1-xRu_xO₂固溶体电极材料的发展和应用提供了理论基础。     

Ru掺杂SnO2半导体固溶体的电子结构研究

运用基于密度泛函理论的第一性原理方法,建立了SnO₂以及不同比例Ru掺杂的SnO₂超胞模型,在对其进行几何优化后计算了Sn_1-xRu_xO₂(x=0,1/16,1/12,1/8,1/6,1/4,1/2)半导体的电子结构,并讨论了其晶格参数、电荷密度、能带结构和态密度(包括分态密度)等性质。结果表明,掺杂后,晶格参数随掺杂量的增加线性减小,与实验值的偏差在4%以内;掺杂后,在费米能级处可以提供更多的填充电子,使得电子跃迁至导带更容易,固溶体的导电性增强。为Sn_1-xRu_xO₂固溶体电极材料的发展和应用提供了理论基础。     

含Pt配合物电子结构和非线性光学性质的TDDFT研究

利用含时密度泛函理论(TDDFT)对trans-(PEt3)2Pt(X)(p-Ph-NO2)的有机金属配合物进行结构优化, 并计算了电子光谱和二阶非线性光学(NLO)性质, 结果表明在1064 nm光场下, 2个分子的共振效应很强, 在远离共振的1907nm的下, 分子的一阶超极化率是尿素的40倍左右。     

齐聚噻吩衍生物在溶液中的光物理和电化学性质

The photophysical and electrochemical properties of a family of oligothiophene derivatives in solution werestudied.It was found that the cyano and the vinyl group could increase fluorescence yield in solution,while theformyl and carboxyl group could decrease energy gap.With increasing the chain length of thiophene ring,the oxi-dation potential could be decreased.