Single- and multi-pulse formation of surface structures under static femtosecond irradiation

Femtosecond surface structure modifications are investigated under irradiation with laser pulses of 150 fs at 800 nm, on copper and silicon. We report sub-wavelength periodic structures formation (ripples) with a periodicity of 500 nm for both materials. These ripples are perpendicular to the laser polarization and can be obtained with only one pulse. The formation of these ripples corresponds to a fluence threshold of 1 J/cm² for copper and 0.15 J/cm² for silicon. We find several morphologies when more pulses are applied: larger ripples parallel to the polarization are formed with a periodicity of 1 μm and degenerate into a worm-like morphology with a higher number of pulses. In addition, walls of deep holes also show sub-wavelength and large ripples.     

Analysis of optical re-modulation by multistage modeling of RSOA

The time-resolved multistage reservoir model well-known for semiconductor optical amplifier (SOA) is extended to analyze the behavior of a bulk homogeneous InP-InGaAsP buried heterostructure reflective semiconductor optical amplifier (RSOA). Parameters for simulation have been extracted from the experimental RSOA characteristics. We have employed the model to explain the steady-state and re-modulation dynamics in the RSOA. Electrical modulation bandwidth and intermodulation distortion in the RSOA have been derived from the model and close agreement is obtained with the reported data. It is found out that the ripples in the upstream output from the RSOA for incomplete modulation erase of downstream modulated data follow Gaussian distribution, which simplifies the calculation of upstream SNR and bit error rate. It is explained in detail that amplitude ripples in the upstream data can be reduced by judicious choice of optical and electrical parameters of the RSOA. In particular, for an average low downstream power level (<−20 dBm) a good downstream modulation erase factor about 89% and 23 dB extinction ratio in the upstream modulated signal can be achieved.     

Surface damage morphology investigations of silicon under millisecond laser irradiation

The surface damage morphologies of single crystal silicon induced by 1064 nm millisecond Nd:YAG laser are investigated. After irradiation, the damage morphologies of silicon are inspected by optical microscope (OM) and atomic force microscope (AFM). The plasma emission spectra of the damaged region are detected by the spectrometer. It is shown that surface oxidation and nitridation have occurred during the interaction of millisecond laser with silicon. In addition, the damage morphologies induced by 2 ms and 10 ns pulse width laser are compared. The damage morphology obtained by 2 ms laser is an evident crater. Three types of damage morphologies are formed at different laser energy densities. The circular concentric ripples are found surrounding the rim of the crater. The spacing of the ripples is 15 ± 5 μm. Two types of cracks are observed: linear crack and circular crack. The linear crack is observed in the center of the damaged region which propagates to the periphery of the damaged region. The circular crack is located at the rim of the crater. The damage morphology induced by 10 ns laser is surface layer damage. The periodic linear waves are generated due to the interference between the incident beam and the scattered beam. The spacing of the ripples is 1.54 μm which is close to the incident laser wavelength 1.064 μm. The linear crack is located at the center of the damaged region. Furthermore, for the same laser energy density, the dimension of the damaged region and the crater depth induced by 2 ms laser are greater than that of 10 ns laser. It indicates that the damage mechanism under millisecond pulse laser irradiation is strongly different from the case of nanosecond pulse laser.     

Subwavelength ripple formation induced by tightly focused femtosecond laser radiation

Subwavelength ripples (<λ/4) are obtained by scanning a tightly focused beam (∼1 μm) of femtosecond laser radiation (λ = 800 nm, t_p = 100 fs) over the surface of either bulk fused silica and silicon and Er:BaTiO₃. The ripple pattern extends coherently over many overlapping laser pulses parallel and perpendicular to the polarisation. Investigated are the dependence of the ripple spacing on the spacing of successive pulses, the direction of polarisation and the material. The evolution of the ripples is investigated by applying pulse bursts with N = 1 to 20 pulses. The conditions under which these phenomena occur are specified, and some possible mechanisms of ripple growth are discussed. Potential applications are presented.     

Cross-phase modulation induced phase fluctuations in optical RZ pulse propagating in dispersion compensated WDM transmission systems

The basic mechanism of cross-phase modulation induced phase fluctuations in optical RZ pulse propagating in a periodically dispersion compensated transmission line has been investigated. Ordinary differential equations have been derived using variational analysis to estimate the phase fluctuation and the analytical result is verified by numerical simulations based on split-step Fourier method. We therefore explore the impact of different dispersion compensation maps on phase fluctuation for 10 Gb/s and 40 Gb/s WDM transmission systems. The effects of initial pulse spacing between channels, channel spacing and residual dispersion on phase shift have been studied. We find that cross-phase modulation induced phase fluctuation can be mitigated by proper adjustment of channel spacing and/or residual dispersion.     

Femtosecond laser induced submicrometer structures on the ablation crater walls of II-VI semiconductors in water

Femtosecond laser ablations (100 fs, 800 nm, 0.2 mJ/pulse) were performed to produce craters on CdS, ZnS:Cu and ZnSe wafers in water. On the surface of the crater walls, a variety of submicrostructural formations were presented, such as the ripples and network structures for CdS, the subwavelength ripples and columnar structures for ZnS:Cu, even the regular cubic-shaped submicron rods for ZnSe. Based on the field-emission scanning electron microscope (FE-SEM) study of the different characteristic surface morphologies, the possible formation mechanisms were discussed correspondingly. For example, two distinct mechanisms are contributing to the different styles of ripples formed on CdS and ZnS:Cu. The former is the interference effects between the incoming laser beam and scattered surface wave, while the latter is the self-organization structure formation. In addition, the re-crystallization of the water-confined hot plasma would play an important role in the formation of ZnS:Cu column structures and ZnSe rods.     

Characterization of a high efficiency, ultrashort pulse shaper incorporating a reflective 4096-element spatial light modulator

We demonstrate pulse shaping via arbitrary phase modulation with a reflective, 1 × 4096 element, liquid crystal spatial light modulator (SLM). The unique construction of this device provides a very high efficiency when the device is used for phase modulation only in a prism based pulse shaper, namely 85%. We also present a single shot characterization of the SLM in the spatial domain and a single shot characterization of the pulse shaper in the spectral domain. These characterization methods provide a detailed picture of how the SLM modifies the spectral phase of an ultrashort pulse.     

Self-Q-switched and mode-locked Nd,Cr:YAG laser with 6.52-W average output power

Simultaneous self-Q-switched and mode-locked have been demonstrated in a diode-pumped Nd,Cr:YAG laser. For the first time as we know, almost 100% modulation depth has been achieved at an intracavity intensity of 5.6 × 10⁵ W/cm². The maximum average output power of 6.52 W corresponding to a slope efficiency of 30% is obtained at 1064 nm. The laser produces high-quality pulses in a TEM₀₀-mode at the pump power of 16.5 W. The pulse duration of the mode-locked pulses is about 600 ps with 136 MHz repetition rate.     

AFM tip-induced ripple pattern on AIII-BV semiconductor surfaces

Modification of c(8x2) InSb(0 0 1) surface induced by prolonged scanning with an atomic force microscope tip has been investigated. The experiment performed with loads of few tens of nanoNewtons resulted in creation of ripples perpendicular to the fast scan direction. It was found that terrace edges are acting as initial instabilities leading to development of the ripple pattern. As a result, information about initial surface topography is preserved in the ripple amplitude, even so the final height of the ripples and their periodicity are determined by the tip curvature.     

Formation of periodic surface nanostructures on Ti:Al2O3 crystals using femtosecond laser pulses

Periodic surface nanostructures are observed on Ti³⁺:Al₂O₃ single crystals that have been irradiated by a single focused beam from a femtosecond pulsed laser (wavelength: 800 nm; pulse duration: 130 and 152 fs). Atomic force microscopy images of single-ablated zones and modified structures created by fixing and translating samples through the focal region of a linearly polarized laser beam reveal self-organized periodic surface nanostructures (ripples) with a subwavelength spacing, which are oriented perpendicular to the electric-field vector of the laser beam. The period of the subwavelength ripples obtained by linearly polarized laser irradiation varies from ∼λ/5 to 2λ/5 (λ: incident laser wavelength) depending on the laser pulse energy. This phenomenon can be explained by assuming that the incident light field interferes with the electric field of electron plasma waves propagating inside the material; this interference periodically modulates the electron plasma density and modifies the surface ablation. In addition, for the first time, we observe screw-shaped nanostructures in the focal spot of circularly polarized beam irradiation. The morphology of these nanostructures appears to reflect the circular polarization of the laser light.     

Laser Shock Processing of 6061-T6 Al alloy with 1064 nm and 532 nm wavelengths

Laser Shock Processing (LSP) has been proposed as a competitive alternative technology to classical treatments for improving fatigue and wear resistance of metals. We present a configuration and results in the LSP concept for metal surface treatments in underwater laser irradiation at 532 nm and 1064 nm. The purpose of the work is to compare the effect of both wavelengths on the same material. A convergent lens is used to deliver 1.2 J/pulse (1064 nm) and 0.9 J/pulse (532 nm) in a 8 ns laser FWHM pulse produced by 10 Hz Q-switched Nd:YAG laser with spots of a 1.5 mm in diameter moving forward along the work piece. A LSP configuration with experimental results using a pulse density of 2500 pulses/cm² and 5000 pulses/cm² in 6061-T6 aluminum samples are presented. High level compressive residual stresses are produced using both wavelengths. It has been shown that surface residual stress level is comparable to that achieved by conventional shot peening, but with greater depths. This method can be applied to surface treatment of final metal products.     

Giga-bit optical receiver for plastic optical fibre

An optical receiver with high sensitivity and linearity specially designed for Giga-bit communications over small-bandwidth high-attenuation multimode plastic optical fiber is presented. An automatic gain control transimpedance amplifier and linear post amplifiers are used to maintain a good performance with multilevel modulation. Using multilevel signaling and large-diameter integrated photodiodes make the presented optical receiver suitable for large core plastic optical fiber. For a wavelength of 675 nm, a sensitivity of −26.3 dB m (BER = 10⁻⁹) at 500 Mb/s is presented by a binary signal. A data rate of 1 Gb/s and a sensitivity of −19.8 dB m (BER = 10⁻⁹) are achieved with four-level pulse amplitude modulation.     

Formation of two ripple modes on Si by ion erosion with simultaneous Fe incorporation

This report focuses on the self organized nanostructure formation on Si (0 0 1) by erosion with low energy Kr⁺ ions with simultaneous incorporation of metallic atoms, in particular Fe. The incorporation of Fe is thought to play an important role in the formation of some features. In the experimental set-up used here the Fe atoms come from the sputtering of a cylindrical stainless steel target situated between the source and the sample holder. It is demonstrated how the Fe flux can be regulated by operational parameters of the ion source. It is shown that two different ripple modes, one perpendicular to the ion beam projection on the surface and the other parallel, were formed at near normal incidence (α = 20°) with ion energy between 300 eV and 2000 eV and a fluence of 6.7 × 10¹⁸ cm⁻². The perpendicular mode ripples dominated the topography when E_ion = 2000 eV, while the parallel mode ripples were the main features observed when E_ion = 300 eV. The correlation of Fe concentration with ion sources parameters and resulting topography is analyzed. It is demonstrated that a certain Fe concentration is necessary for the formation of ripples that are oriented perpendicular to the ion beam and that the Fe concentration alone does not determine the evolving topography.     

Design of an ultrafast all-optical NOR logic gate based on Mach-Zehnder interferometer using quantum-dot SOA

This paper proposes a design for all-optical NOR logic gate, based on Mach-Zehnder interferometer (MZI) using quantum-dot semiconductor optical amplifier (QD-SOA). In this regard, a theoretical model for an ultrafast all-optical signal processor is developed using QD-SOA to achieve high bit rate operation. We have demonstrated the NOR gate operation in two cases of with and without an optical control pulse. Simulations have been carried out at data bit rates 160 Gb/s, 200 Gb/s, and 250 Gb/s for the case that control pulse is not applied, and also at data bit rates 1 Tb/s and 2 Tb/s in presence of control pulse which leads to improvement of gain recovery time and ultrafast NOR logic operation. In addition, quality factors of the output signals in presence and without the control pulse at different bit rates with different bias currents have been investigated for pseudo-random binary sequence (PRBS) of word length 2⁸–1.     

Experimental analysis of the fast magnetization dynamics in high perpendicular anisotropy Co/Pt nanostructures

We present preliminary results for magnetization dynamics in high perpendicular anisotropy Co/Pt cross-shaped nanostructures submitted to a single/train out-of-plane field pulses. For this, a fabrication process has been developed to obtain high-quality microwave test structures. Using extraordinary Hall effect, we measure quasistatic hysteresis loops while applying either a single or a train of field pulses of given amplitude (32 mT at maximum), variable duration (0.2–10 ns) and repetition frequency (1–100 kHz). We get that field pulses affect only one side of the hysteresis loops without any clear change in the squareness of the loop. Such behavior can be most probably attributed to pulse-induced nucleation of reverse domains in the cross area. The measured shift in coercive field decreases linearly with the logarithm of the pulse duration and two switching regimes that get connected for pulse duration around 1 ns have been observed. Switching probability with single pulse showed that field pulse of 10 ns and 32 mT of magnitude has the same effect of 2 mT static fields.     

Surface micro/nanostructuring of titanium under stationary and non-stationary femtosecond laser irradiation

In this paper the surface topography of titanium samples irradiated by femtosecond laser pulses is described. When the fluence is about 0.5 J/cm² periodic ripples with a period of about 700 nm are formed. For fluences between 0.5 and 2 J/cm², a microcolumnar surface texture develops in the center of the irradiated spots and ripples are formed in the periphery of the spots. When experiments are performed with a non-stationary sample, the microcolumns exhibit ripples similar to those observed when the radiation fluence is about 0.5 J/cm² and in the outer regions of the irradiated areas for fluences between 0.5 and 2 J/cm². Since the energy distribution in the transverse cross-section of the laser beam is Gaussian, we conclude that the ripples form when the microcolumns are subjected to fluences near the melting threshold of the material at the trailing edge of the moving laser beam.     

Nonlinear optical absorption studies of an organo-metallic complex by Z-scan technique

An organo-metallic complex, [(CH₃)₄N][Ni(dmit)₂] (dmit²⁻ = (1,3-dithiole-2-thione-4,5-dithiolate), abbreviated as MeNi, is synthesized. The nonlinear optical absorption properties of MeNi dissolved in acetone have been studied using the open-aperture Z-scan technique with 40 ps pulse width at 1064 nm and 1 ns, 15 ns pulse width at 1053 nm, respectively. Strong saturable absorption has been found when the sample solution is irradiated by 40 ps and 1 ns laser pulses. While irradiated with 15 ns laser pulse, a stronger reverse saturable absorption has been found. The nonlinear optical absorption coefficients are −1.03 × 10⁻¹¹ m/W, −1.85 × 10⁻¹¹ m/W and 3.84 × 10⁻¹⁰ m/W, respectively. The mechanism responsible for the difference between the results is analyzed. All the results suggest that this material may be a promising candidate for the application to laser pulse compression in the near-infrared waveband.     

Femtosecond laser ablation of silver foil with single and double pulses

The average ablation depth per pulse of silver foil by 130 fs laser pulses has been measured in vacuum over a range of three orders of magnitude of pulse fluence up to 900 J cm⁻². In addition, double pulses with separations up to 3.4 ns have been used to probe time scales of relevance for femtosecond ablation. The double pulse ablation depth, when each pulse fluence is 0.7 J cm⁻², falls to that of a single pulse as the pulse separation is increased from 0 ps to 700 ps. This time scale decreases to only 4 ps as the fluence is increased to 11 J cm⁻². It then jumps to 500 ps across a transition fluence where the slope of the ablation depth versus logarithmic fluence characteristic changes abruptly to a higher value. In addition, for pulse separations near 1000 ps, the second pulse can cause re-deposition of ejecta from the first pulse resulting in a double pulse ablation depth only 40% that of the first pulse alone. This has important implications for the interpretation of double pulse femto-LIBS intensities. Our results suggest that the optical properties of nano or mesoparticles play a significant role in double pulse ablation with large pulse separations.     

Diode-pumped passively Q-switched mode-locked Nd:YLF laser with uncoated GaAs saturable absorber

We have demonstrated passively Q-switched mode-locked all-solid-state Nd:YLF laser with an uncoated GaAs wafer as saturable absorber and output mirror simultaneously. Q-switched mode-locking pulses laser with about 100% modulation depth were obtained. The average output power is 890 mW at the incident pump power of 5.76 W, corresponding to an optical slop efficiency of 20%. The temporal duration of mode-locked pulses was about 21 ps. At the Q-switched repetition rate of 30 kHz, the energy and peak power of a single pulse near the maximum of the Q-switched envelope was estimated to be about 1.6 μJ and 76 kW.     

Spontaneous 2D modulation instability in second harmonic generation process

Two-dimensional modulation instability (2DMI) is experimentally demonstrated in a classical second harmonic generation setup. The spatial spectrum is measured and reveals typical 2DMI bands, in agreement with the analytical MI model. These observations are confirmed by (2 + 1)D numerical simulations.