Oxidation mechanism of hydrogen-terminated Ge(1 0 0) surface

Control of the surface chemistry to prepare a robust termination on the Ge surface is crucial for the development of high-end Ge devices. In this study, oxidation of a H-terminated Ge surface was studied in air ambient and H₂O using a multiple internal reflection Fourier transform infrared spectroscopy (MIR FT-IR) technique. Ge surface treated in less diluted HF exhibited a stronger Ge-H peak intensity, and the surface was easily oxidized in the air ambient. Therefore, it is believed that the treatment of the Ge surface in highly diluted HF solution has an advantage in suppressing the oxidation of Ge in the air ambient. For the oxidation of Ge(1 0 0) surface in air ambient, the Ge surface is attacked by oxidizing agents to break Ge-H and Ge-Ge bonds, and the transition GeO_x layer is first formed, followed by a layer-by-layer GeO₂ formation with the increase in exposure time. When the H-terminated Ge surface was treated in H₂O, GeO_x was mainly formed, the thickness of the oxide layer was not changed with an increase in treatment time, and the Ge surface was maintained in a suboxide state, which exhibits a different oxidation mechanism from that in air ambient.     

The changes in morphology of Si(1 0 0) surface upon dipping in ultrapure water

The changes in morphology and chemical states of Si(1 0 0) surface upon dipping in ultrapure water were investigated by using atomic force microscope and X-ray photoelectron spectroscopy. The oxidation and the etching competitively progressed at the HF-treated Si(1 0 0) surface in ultrapure water, which made the smooth surface rough. However, the surface covered with a thick native oxide film was not etched at all. During the repetition of the oxidation and the etching, the SiO₂-nuclei was, by chance, able to grow up to some size of islands and worked as the protective barrier against the water etching. Thus, the SiO₂-islands would remain without being etched off, whereas rest parts of the surface could be etched off. This selective etching leads the surface morphology to become rough. Both the oxidation and the etching progressed violently as the water temperature and the dipping time increased.     

Oxidation of a cesium-covered Ni (1 1 0) surface studied by metastable-induced electron spectroscopy

An initial stage of oxidation of a cesium-covered Ni (1 1 0) surface has been studied by metastable-induced electron spectroscopy (MIES) and low-energy electron diffraction (LEED). The MIES brought spectra with Cs 6s induced peak (P_6s), Cs 5p (P_5p), O 2p induced peak (P_ox) and a structure related to the substrate Ni 3d states (P_3d). The work function change Δφ showed an oscillatory behavior in the progress of surface oxidation. The process is divided into three stages: (i) at low O₂ exposures, Δφ > 0 with unchanging P_5p and P_6s; (ii) at moderate exposures, Δφ < 0 with a drastic decrease in the P_6s intensity; (iii) at higher exposures, Δφ > 0 with shifts of peaks P_5p and P_ox to higher energies, together with an appearance of peak P_3d. A three-step model of initial oxidation of alkali-covered Ni (1 1 0) surfaces is presented.     

Structure and composition of chemically prepared and vacuum annealed InSb(0 0 1) surfaces

The InSb(0 0 1) surfaces chemically treated in HCl-isopropanol solution and annealed in vacuum were studied by means of X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and electron energy-loss spectroscopy (EELS). The HCl-isopropanol treatment removes indium and antimony oxides and leaves on the surface about 3 ML of physisorbed overlayer, containing indium chlorides and small amounts of antimony, which can be thermally desorbed at 230 °C. The residual carbon contaminations were around 0.2-0.4 ML and consisted of the hydrocarbon molecules. These hydrocarbon contaminations were removed from the surface together with the indium chlorides and antimony overlayer. With increased annealing temperature, a sequence of reconstructions were identified by LEED: (1 × 1), (1 × 3), (4 × 3), and (4 × 1)/c(8 × 2), in the order of decreasing Sb/In ratio. The structural properties of chemically prepared InSb(0 0 1) surface were found to be similar to those obtained by decapping of Sb-capped epitaxial layers.     

Wet sulfur passivation of GaSb(1 0 0) surface for optoelectronic applications

A comparative analysis of the properties of the non-passivated and S-passivated GaSb(1 0 0) surfaces has been performed through PL, AFM and RHEED characterization. The samples treated with a 1 M Na₂S aqueous solution demonstrate an increase in the 5 K PL intensity. According to AFM data, the annealing of the S-passivated GaSb(1 0 0) leads to the formation of the clean flat (1 0 0) surface. Moreover, after annealing the PL intensity of the S-passivated GaSb(1 0 0) surfaces decreases by 20%, whereas for the non-passivated samples it drops by more than a factor of 4. The method of wet sulfur passivation has shown great effectiveness in pre-epitaxial processing for LPE and MBE growth of the GaSb-related materials for optoelectronics.     

Atypical grain growth for (2 1 1) CdTe films deposited on surface reconstructed (1 0 0) SrTiO3 substrates

The (1 0 0) SrTiO₃ substrate has emerged as the oxide substrate of choice for the deposition of a wide variety of materials. The substrate's unavoidable miscut leads to a step-terrace morphology when heated to high temperatures. This morphological transition is accompanied by an atomic scale repositioning of the uppermost terrace atoms, the nature of which is strongly dependent on the substrate temperature and ambient atmosphere used. Here, we report the deposition of CdTe films on the as-received and reconstructed surfaces of (1 0 0) SrTiO₃. The as-received substrate gives rise to a [1 1 1] CdTe film with four equally distributed in-plane grain orientations. The surface reconstruction, on the other hand, gives rise to an unprecedented reorientation of the film's grain structure. For this case, a [2 1 1] CdTe film emerges having twelve unevenly distributed in-plane orientations. We attribute the film's grain structure to an atomic scale surface reconstruction, with the anisotropic distribution of grain-types arising from a preferential formation due to the step edges.     

New reconstruction-stoichiometry correlation for GaAs(0 0 1) surface treated by atomic hydrogen

The structure, stoichiometry and electronic properties of the GaAs(0 0 1)-(2 × 4)/c(2 × 8) surface treated by cycles of atomic hydrogen (AH) exposure and subsequent annealing in UHV were studied with the aim of preparing the Ga-rich surface at low temperatures. Low energy electron diffraction showed reproducible structural transformations in each cycle: AH adsorption at the (2 × 4)/c(2 × 8) surface led to the (1 × 4) structure at low AH exposure and to a (1 × 1) surface at higher AH exposure with subsequent restoration of the (2 × 4)/c(2 × 8) structure under annealing at 450 °C. The cycles of AH treatment preserved the atomic flatness of the GaAs(1 0 0) surface, keeping the mean roughness on to about 0.15 nm. The AH treatment cycles led to the oscillatory behavior of 3dAs/3dGa ratio with a gradual decrease to the value characteristic for the Ga-rich surface. Similar oscillatory variations were observed in the work function. The results are consistent with the loss of As from the surface as a result of the desorption of volatile compounds which are formed after reaction with H. The prepared Ga-rich GaAs(0 0 1) surface showed the stability of the (2 × 4)/c(2 × 8) structure up to the annealing temperature of 580 °C.     

Structural and electrical analysis of S ion bombarded p-InP(1 0 0)

The chemical state of sulfur and surface structure on low-energy S⁺ ion-treated p-InP(1 0 0) surface have been investigated by high-resolution X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED). S⁺ ion energy over the range of 10-100 eV was used to study the effect of ion energy on surface damage and the process of sulfur passivation on p-InP(1 0 0) by S⁺ ion beam bombardment. It was found that sulfur species formed on the S⁺ ion-treated surface. The S⁺ ions with energy above 50 eV were more effective in formation of In-S species, which assisted the InP surface in reconstruction into an ordered (1 × 1) structure upon annealing. After taking into account physical damage due to the process of ion bombardment, we found that 50 eV was the optimal ion energy to form In-S species in the sulfur passivation of p-InP(1 0 0). The subsequent annealing process removed donor states that were introduced during the ion bombardment of p-InP(1 0 0). Results of theoretical simulations by Transport of Ions in Materials (TRIM) are in accordance with those of experiments.     

Oxidation of graphene on Ru(0 0 0 1) studied by scanning tunneling microscopy

The oxidation of graphene layer on Ru(0 0 0 1) has been investigated by means of scanning tunneling microscopy. Graphene overlayer can be formed by decomposing ethyne on Ru(0 0 0 1) at a temperature of about 1000 K. The lattice mismatch between the graphene overlayer and the substrate causes a moiré pattern with a superstructure in a periodicity of about 30 Å. The oxidation of graphene/Ru(0 0 0 1) was performed by exposure the sample to O₂ gas at 823 K. The results showed that, at the initial stage, the oxygen intercalation between the graphene and the Ru(0 0 0 1) substrate takes place at step edges, and extends on the lower steps. The oxygen intercalation decouples the graphene layer from the Ru(0 0 0 1) substrate. More oxygen intercalation yields wrinkled bumps on the graphene surface. The oxidation of graphene, or the removal of carbon atoms can be attributed to a process of the combination of the carbon atoms with atomic oxygen to form volatile reaction products. Finally, the Ru(0 0 0 1)-(2 × 1)O phase was observed after the graphene layer is fully removed by oxidation.     

In-situ study of the catalytic oxidation of CO on a Pt(1 1 0) surface using ambient pressure X-ray photoelectron spectroscopy

CO and O₂ co-adsorption and the catalytic oxidation of CO on a Pt(1 1 0) surface under various pressures of CO and O₂ (up to 250 mTorr) are studied using ambient pressure X-ray photoelectron spectroscopy (APXPS) and mass spectrometry. There is no surface oxide formation on Pt under our reaction conditions. CO oxidation in this pressure (<500 mTorr), O₂ to CO ratio (<10), and temperature (150 °C) regime is consistent with the Langmuir-Hinshelwood reaction mechanism. Our findings provide in-situ surface chemical composition data of the catalytic oxidation of CO on Pt(1 1 0) at total pressures below 1 Torr.     

Nitrogen plasma cleaning of Ge(1 0 0) surfaces

We propose a dry method of cleaning Ge(1 0 0) surfaces based on nitrogen plasma treatment. Our in situ Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED) analyses demonstrate that surface contamination remaining after wet treatment was effectively removed by nitrogen radical irradiation at low substrate temperatures. The nitrogen plasma cleaned Ge(1 0 0) surface shows a well-ordered 2 × 1 reconstruction, which indicates the formation of a contamination-free Ge(1 0 0) surface with good crystallinity. We discuss the possible reaction mechanism considering how chemisorbed carbon impurities are removed by selective C-N bond formation and subsequent thermal desorption. These findings imply the advantage of plasma nitridation of Ge surfaces for fabricating nitride gate dielectrics, in which we can expect surface pre-cleaning at the initial stage of the plasma treatment.     

Monolayer passivation of silicon(0 0 1) surface by selenium

Monolayer passivation of the silicon(0 0 1) surface by selenium is investigated in an ultrahigh vacuum environment with a solid selenium source by reflection high-energy electron diffraction and residual gas analysis. It is found that precisely one monolayer of selenium is deposited on silicon(0 0 1) when the silicon substrate temperature is set slightly above the selenium source temperature and the passivation time ensures a little overdose of selenium above one monolayer. The temperature settings prevent selenium condensation on silicon(0 0 1), which makes selenium deposition on silicon(0 0 1) a thermodynamically self-limited process to exactly one monolayer.     

Nano- and micro-scale patterning of Si (1 0 0) under keV ion irradiation

Evolution of Si (1 0 0) surface under 100 keV Ar⁺ ion irradiation at oblique incidence has been studied. The dynamics of surface erosion by ion beam is investigated using detailed analysis of atomic force microscopy (AFM) measurements. During an early stage of sputtering, formation of almost uniformly distributed nano-dots occurs on Si surface. However, the late stage morphology is characterized by self-organization of surface into a regular ripple pattern. Existing theories of ripple formation have been invoked to provide an insight into surface rippling.     

Study of S ion-assisted sulfurization of n-GaAs (1 0 0) surface

The chemical structure and site location of sulfur atoms on n-GaAs (1 0 0) surface treated by bombardment of S⁺ ions over their energy range from 10 to 100 eV have been studied by X-ray photoelectron spectroscopy and low energy electron diffraction. The formation of Ga-S and As-S species on the S⁺ ion bombarded n-GaAs surface is observed. An apparent donor doping effect is observed for the n-GaAs by the 100 eV S⁺ ion bombardment. It is found that the S⁺ ions with higher energy are more effective in the formation of Ga-S species, which assists the n-GaAs (1 0 0) surface in reconstruction into an ordered (1 × 1) structure upon subsequent annealing. The treatment is further extended to repair Ar⁺ ion damaged n-GaAs (1 0 0) surface. It is found that after a n-GaAs (1 0 0) sample is damaged by 150 eV Ar⁺ ion bombardment, and followed by 50 eV S⁺ ion treatment and subsequent annealing process, finally an (1 × 1) ordering GaAs (1 0 0) surface with low surface states is obtained.     

Photoemission studies of initial oxidation for ultra-thin zinc film on 6H-SiC(0 0 0 1) surface with synchrotron radiation

The thermal oxidation process of metallic zinc on 6H-SiC(0 0 0 1) surface has been investigated by using atomic force microscopy (AFM), synchrotron radiation photoelectron spectroscopy (SRPES) and XPS methods. The AFM images characterize the surface morphology of ZnO film formed during the thermal oxidation and SRPES record the valence band, Si 2p and Zn 3d spectra at different stages. The O 1s peak is recorded by XPS because of the energy limit of the synchrotron radiation. Our results reveal that the silicon oxides layer of SiC substrate can be reduce by hot metallic zinc atom deposition. The oxygen atoms in the silicon oxides are captured by the zinc atoms to form ZnO_x at the initial stage and as a result, the oxidized SiC surface are deoxidized. After the zinc deposition with the final thickness of 2.5 nm, the sample is exposed in oxygen atmosphere and annealed at different temperatures. According to the evolution of peaks integrated intensities, it is considered that the Zn/SiC system will lose zinc atoms during the annealing in oxygen flux at high temperature due to the low evaporation temperature of pure zinc. After further annealing in oxygen flux at higher temperature, the substrate is also oxidized and finally the interface becomes a stable SiC-SiO_x-ZnO sandwich structure.     

First-principles calculations of hydrogen molecule adsorption on Ti (0 0 0 1)-(2 × 1) surface

Adsorption of H₂ molecule on the Ti (0 0 0 1)-(2 × 1) surface was studied by density functional theory with generalized gradient approximation (GGA). The parallel and vertical absorption cases were investigated in detail by adsorption energy and electronic structure analysis, we obtained three stable configurations of FCC-FCC (the two H atoms adsorption on the two adjacent fcc sites of Ti (0 0 0 1) surface, respectively), HCP-HCP (the two H atoms adsorption on the two adjacent hcp sites of Ti (0 0 0 1) surface, respectively) and FCC-HCP (the one H atom adsorption on the fcc site and the other adsorption on the near hcp site) based on the six different parallel adsorption sites after the H₂ molecule dissociates. However, all the end configurations of four vertical adsorption sites were unstable, H₂ molecule was very easy to desorb from Ti surface. The H-H bond breaking and Ti-H bond forming result from the H₂ molecule dissociation. H-H bond breaking length ranges from 1.9 Å to 2.3 Å for different adsorption configurations due to the strong Ti-H bond forming. The H₂ dissociative approach and the end stable configurations formation in parallel adsorption processes are attributed to the quantum mechanics steering effects.     

Comparison of O adsorption on Ni3Al (0 0 1), (0 1 1), and (1 1 1) surfaces through first-principles calculations

First-principles calculations were performed to study the properties of O adsorption on Ni₃Al (0 0 1), (0 1 1), and (1 1 1) surfaces using the Cambridge serial total package (CASTEP) code. Stable adsorption sites are identified. The atomic and electronic structures and adsorption energies are predicted. The adsorption sites for O on the Ni₃Al (0 0 1) surface are at the 2Ni–2Al fourfold hollow site, whereas O prefers to adsorb at the Ni–Al bridge site on (0 1 1) surface and 2Ni–Al threefold hollow site on (1 1 1) surface. It is found that O shows the strongest affinity for Al and the state of O is the most stabilized when O adsorbs on (0 0 1) surface, while the affinity of O for Al on (0 1 1) surface is weaker than (0 0 1) surface, and (1 1 1) surface is the weakest. The stronger O and Al affinity indicates more stable Al₂O₃ when oxidized. The experiment has shown that the oxidation resistance of single crystal superalloy in different orientations improves in the order of (1 1 1), (0 1 1), and (0 0 1) surface, suggesting that the oxidation in different crystallographic orientations may be related to the affinity of O for Al in the surface.     

Analysis of mechanism of carbon removal from GaAs(1 0 0) surface by atomic hydrogen

Etching of carbon contaminations from the GaAs(1 0 0) surface by irradiating with atomic hydrogen, which is one of the key reactions to promote high-quality thin films growth by molecular beam epitaxy (MBE), has been investigated by mass spectrometry (MS), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It is shown that during the cleaning process at room temperature a total reduction of the Auger carbon signal, accompanied by desorption of methane as major reaction product, can be observed. The reaction pathways as well as the processes responsible for the observed carbon removal are discussed in detail to give a support for etching and growth quality enhancement not only in thin films epitaxy but in all atomic hydrogen promoted gas-phase III-V semiconductor processes.     

In situ X-ray analysis of solid/electrolyte interfaces: electrodeposition of Cu and Co on Si(1 1 1):H and GaAs(0 0 1) and corrosion of Cu3Au(1 1 1)

Electrochemical deposition of Cu and Co in monolayer amounts on hydrogen terminated Si(1 1 1) was studied ex situ and in situ by X-ray techniques. The X-ray beam was found to have a strong effect on the deposit causing desorption under the beam. Cu deposition on GaAs(0 0 1) from UHV is compared with electrodeposited Cu on the same surface, elucidating similarities and differences of electrochemical and UHV deposition. Roughening due to corrosion of Cu₃Au(1 1 1) is observed by crystal truncation scattering. The observed behaviour of passivation of this surface is explained by the formation of Au clusters, increasingly covering the surface at higher oxidation potential.     

Growth of ultra-thin cerium oxide layers on Cu(1 1 1)

The reactive vacuum deposition of CeO₂ on Cu(1 1 1) surface in oxygen atmosphere provides high quality epitaxial ceria overlayers. We report the growth characteristics of Ce oxide, the structures, and the temperature stability of the oxide phases as investigated by low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy. We find that Ce oxide on the Cu(1 1 1) grows initially in the form of islands giving sharp hexagonal LEED pattern of the CeO₂(1 1 1) structure corresponding to the (1.5 × 1.5) structure. The CeO₂-Cu(1 1 1) films exhibited mixed valence states and temperature dependent CeO₂-Ce₂O₃ transition above 900 K due to the vacuum annealing. The transition progressed more rapidly at the surface, probably by formation of oxygen vacancies.