共查询到20条相似文献,搜索用时 15 毫秒
1.
Shi-Yi Zhuo Xue-Chao Liu Ze Xiong Jian-Hua Yang Er-Wei Shi 《Solid State Communications》2012,152(4):257-260
We present here new evidences of point defects enhanced ferromagnetism in Cu-doped ZnO thin films by different characterization methods. Cu-doped ZnO thin films with Cu concentrations ranging from 0.05 to 5 at.% were prepared by an inductively coupled plasma enhanced physical vapor deposition system. Room-temperature ferromagnetism is observed in all the films. The saturation magnetization shows an increasing trend with the increase of Cu concentration except a slight decrease for the 1 at.% Cu-doping. Further study performed by Raman spectra, X-ray absorption spectra and extended X-ray absorption fine structure indicate the existence of Cu2+ ions and point defects in all the films. The local structural characterization and magnetic properties reveal that the sample with larger saturation magnetization has a higher concentration of point defects. 相似文献
2.
Jong-Han Lee Sangwon ShinKeun Hwa Chae Donghwan KimJonghan Song 《Current Applied Physics》2012,12(3):924-927
1 MeV Cu2+ ions have been implanted into un-doped ZnO and Ga-doped ZnO films with a dose of 1 × 1017 ions/cm2 at room-temperature. Cu ion-implanted Ga-doped ZnO had ferromagnetism at room-temperature and the saturation magnetization of this sample was estimated to be 0.12 μB per Cu, while the Cu ion-implanted un-doped ZnO did not show ferromagnetic behavior. Near-edge X-ray fine structure (NEXAFS) spectroscopy revealed that a partial amount of implanted Cu ions existed as Cu2+ (d9) state in Ga-doped ZnO film. On the other hand, almost Cu atoms existed as Cu1+ (d10) state in un-doped ZnO film. However, the subsequent annealing at temperature above 800 °C on this ferromagnetic sample induced the annihilation of ferromagnetism due to the formation of non-ferromagnetic Cu2O phase. 相似文献
3.
F.M. Li L.T. Bo S.Y. Ma X.L. Huang L.G. Ma J. Liu X.L. Zhang F.C. Yang Q. Zhao 《Superlattices and Microstructures》2012
Cu-doped zinc oxide (ZnO:Cu) films were deposited on p-Si (1 0 0) substrates at 200 °C under various oxygen partial pressures by using radio frequency reactive magnetron sputtering. The properties of the films were characterized by the X-ray diffraction spectroscopy (XRD), energy dispersive spectrometer, X-ray photoelectron spectroscopy (XPS) and fluorescence spectrophotometer with the emphasis on the evolution of microstructures, element composition, valence state of Cu, optical properties. The results indicated that the properties of ZnO:Cu films were significantly affected by oxygen partial pressures. XRD measurements revealed that the sample prepared at the ratio of O2:Ar of 15:10 sccm had the best crystal quality among all ZnO:Cu films. XPS analysis results suggested that the valence of Cu in the ZnO films was a mixed state of +1 and +2, and the integrated intensity ratio of Cu2+ to Cu+ increased with the increment of oxygen partial pressure. The photoluminescence measurements at room temperature revealed a violet, two blue and a green emission. We considered that the origin of green emission came from various oxygen defects when the ZnO:Cu films grew in oxygen poor and enriched environment. Furthermore, the influence of annealing atmosphere on the microstructures and optical properties of ZnO:Cu films were discussed. 相似文献
4.
E Céspedes J. Sánchez-Marcos J. García-López Carlos Prieto 《Journal of magnetism and magnetic materials》2010,322(9-12):1201-1204
The effect of introducing nitrogen and oxygen in the sputtering working gas on the magnetic properties of Mn:ZnO thin films has been investigated. A set of films has been characterized by X-ray diffraction, X-ray absorption near edge structure (XANES) and optical absorption spectroscopy to correlate its magnetic properties with Mn electronic characteristics. Mn2+ substituting Zn2+ in the wurtzite structure has been obtained for the films presenting considerably high saturation magnetization values. The change in the magnetic behaviour seems to be associated with the electronic carrier density in the films. 相似文献
5.
Effects of hydrogen flow on properties of hydrogen doped ZnO thin films prepared by RF magnetron sputtering 总被引:1,自引:0,他引:1
Yuehui Hu Yichuan Chen Jun Chen Xinhua Chen Defu Ma 《Applied Physics A: Materials Science & Processing》2014,114(3):875-882
The hydrogen doped ZnO (ZnO:H) thin films were deposited on quartz glass substrates by radio frequency magnetron sputtering. The doping characteristics of ZnO:H thin films with varied hydrogen flow ratio were investigated. At low hydrogen flow ratio (H2/(H2+Ar)≤0.02), the ZnO:H thin films exhibited dominant (002) peaks from X-ray diffraction and the lattice constants became smaller. The particles were mainly a columnar structure. The particles’ size became smaller, and the island-like structure appeared on the thin films surface. In addition, the low resistivity properties of ZnO:H thin films was ascribed to the increase of the carriers concentration and carriers mobility; When the hydrogen flow ratio was more than 0.02 (M≥0.02), two absorption bands at 1400–1800 cm?1 and 3200–3900 cm?1 were observed from the FT-IR spectra, which indicated that the ZnO:H thin films had typical Zn–H bonding, O–H bonding (hydroxyl), and Zn–H–O bonding (like-hydroxyl). The scanning electron microscope (SEM) results show that a large number of hydroxyl agglomeration formed an island-like structure on the thin films surface. The absorption peak at about 575 cm?1 in the Raman spectra indicated that oxygen vacancies (VO) defects were produced in the process of high hydrogen doping. In this condition, the low resistivity properties of ZnO:H thin films were mainly due to the increasing electron concentration resulted from VO. Meanwhile, the Raman absorption peaks at approximately 98 cm?1 and 436 cm?1 became weaker, and the (002) XRD diffraction peak quenched and the lattice constants increased, which shows that the ZnO:H thin films no longer presented a typical ZnO hexagonal wurtzite structure. With the increasing of hydrogen flow ratio, the optical transmittance of ZnO:H thin films in the ultraviolet band show a clear Burstein–Moss shift effect, which further explained that electron concentration was increased due to the increasing VO with high hydrogen doping concentration. Moreover, the optical reflectance of the thin films decreased, indicating the higher roughness of the films surface. It was noteworthy that etching effect of H plasma was obvious in the process of heavy hydrogen doping. 相似文献
6.
使用对Zn2N3:Mn薄膜热氧化的方法成功制备了高含N量的Mn和N共掺ZnO的稀磁半导体薄膜.在没有N离子共掺的情况下,ZnO:Mn薄膜的铁磁性非常微弱;如果进行N离子的共掺杂,就会发现ZnO:Mn薄膜在室温下表现出非常明显的铁磁性,饱和离子磁矩为0.23 μB—0.61 μB.这说明N的共掺激发了ZnO:Mn薄膜中的室温铁磁性,也就是受主的共掺引起的空穴有利于ZnO中二价Mn离子的铁磁性耦合,这和最近的相关理论研究符合很好.
关键词:
磁性半导体
受主掺杂
空穴媒介的铁磁性 相似文献
7.
Sang Soo Yu Young Eon Ihm Dojin Kim Sangjun Oh Hyun Ryu 《Solid State Communications》2005,134(9):641-645
Magnetic properties of amorphous Ge1−xMnx thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was ∼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge1−xMnx thin films are 5.0×10−4∼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge1−xMnx thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge1−xMnx thin films have p-type carrier and hole densities are in the range from 7×1017 to 2×1022 cm−3. 相似文献
8.
Cu2S thin films deposited on glass substrate by chemical bath deposition were studied at different deposition temperatures and times. The results of X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX), the Hall Effect measurement system and UV-Vis absorption spectroscopy indicate that both deposition temperature and time are important to obtain polycrystalline thin films. XRD showed that the polycrystalline Cu2S thin films have monoclinic structure. Meanwhile, the structural variations were analyzed using SEM. EDX analysis results of the thin film showed that the atomic ratio of Cu/S was close to 2:1. It was found from the Hall Effect measurement that the resistivity varied from 4.59?×?10?3 to 13.8?×?10?3 (Ω?cm). The mobility values of the Cu2S thin films having p-type conductivity varied from 15.16 to 134.6?cm2/V.s. The dark electrical resistivity measurements were studied at temperatures in the range 303–423?K. The electrical activation energies of Cu2S thin films were calculated by using Arrhenius plots, from which two different activation energy values are estimated for each thin film. Using UV-Vis absorption spectroscopy (Ultraviolet/visible), the direct and indirect allowed optical band gap values were determined to lie between 2.16 and 2.37?eV and 1.79 and 1.99?eV, respectively. In addition, the values of the refractive index (n) and the extinction coefficient (k) were determined. 相似文献
9.
Arun Aravind K. Hasna M. K. Jayaraj Mukesh Kumar Ramesh Chandra 《Applied Physics A: Materials Science & Processing》2014,115(3):843-849
Phase pure Zn1?x Co x O thin films grown by pulsed laser deposition have transmittance greater than 75 % in the visible region. Raman studies confirm the crystalline nature of Zn1?x Co x O thin films. Zn0.95Co0.05O thin films show room temperature ferromagnetism with saturation magnetization of 0.4μ B /Co atom. The possible origin of paramagnetism at higher Co doping concentrations can be attributed to the increased nearest-neighbor antiferromagnetic interactions between Co2+ ions in ZnO matrix. XPS confirms the substitution of Co2+ ions into the ZnO host lattice. 相似文献
10.
H.M. Zaki 《Physica B: Condensed Matter》2012,407(12):2025-2031
Cu2+ ions substituted Ni-ferrite having the general formula Ni1-xCuxFe2O4 (where x=0.0, 0.2, 0.4 and 0.6) were prepared by the sintering ceramic method. X-ray diffraction, infrared spectra and magnetization of the above ferrite were carried out to investigate structural and magnetic characterization of this ferrite. Crystallite size, lattice parameters, positional oxygen parameter and ionic radii for both tetrahedral and octahedral sites were calculated. The experimental lattice parameter was found to vary between 8.3856 and 8.3865 Å. The infrared spectra were measured in the frequency range 650–150 cm−1. Two prominent bands were observed, high frequency band ν1 and low frequency band ν2 were assigned to tetrahedral and octahedral sites. Bond length and force constant were also calculated for both tetrahedral and octahedral sites. The effect of Cu concentration on, saturation magnetization, coercivity ratio and magnetic moment were investigated using vibrating sample magnetometer (VSM). It was found that both saturation magnetization (MS) and coercivity (Hc) decreases with increasing in Cu content. 相似文献
11.
Kiattisak Noipa Saroj Rujirawat Rattikorn Yimnirun Vinich Promarak Santi Maensiri 《Applied Physics A: Materials Science & Processing》2014,117(2):927-935
Cu-doped ZnO nanorods (i.e. Cu = 1.75, 3.55, 5.17 and 6.39 at.%) have been successfully synthesized by simple, direct, thermal decomposition of zinc and copper acetates in air at 300 °C for 6 h. The prepared samples were characterized by X-ray diffraction (XRD) and transmission electron microscopy. The XRD results indicate that the 1.75 at.% Cu-doped ZnO sample has a pure phase with the ZnO wurtzite structure, while the impurity phases are detected with increasing Cu concentrations. It was found that the doping of Cu results in a reduction of the preparation temperature. The optical properties of the samples were also investigated by UV–visible spectroscopy and photoluminescence measurements. The results show that the Cu doping causes the change in energy-band structures and effectively adjusts the intensity of the luminescence properties of ZnO nanorods. X-ray photoelectron spectroscopy analysis implies that there are some oxygen vacancies in the samples and also indicates that all the doped samples are associated with the mixture of Cu ion states (Cu2+ and Cu1+/Cu0). Magnetic measurements by vibrating sample magnetometry indicate that undoped ZnO is diamagnetic, whereas all of the Cu-doped ZnO samples exhibit room temperature ferromagnetic behavior. We suggest that Cu substitution and density of oxygen vacancies (V o) may play a major role in the room temperature magnetism of the Cu-doped ZnO samples. 相似文献
12.
Zuci Quan 《Applied Surface Science》2010,256(11):3669-3675
Zn0.95−xCo0.05CuxO (ZCCO, where x = 0, 0.005, 0.01 and 0.015) thin films were deposited on Si (1 0 0) substrates by pulsed laser deposition technique. Crystal structures, surface morphologies, chemical compositions, bonding states and chemical valences of the corresponding elements for ZCCO films were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and X-ray photoelectron spectroscopy (XPS). XRD and FESEM results indicate that crystallite sizes of the highly (0 0 2)-oriented ZCCO films slightly decrease with increasing Cu content. When the Cu content increases from 0 to 0.015, Zn 2p3/2, Co 2p, Cu 2p3/2 and O 1s peaks of the ZCCO film shift towards higher or lower binding energy regions, and the reasons for these chemical shifts are investigated by fitting the corresponding XPS narrow-scan spectra. Both in-plane and out-of-plane magnetization-magnetic field hysteresis loops of the ZCCO films reveal that all the films have room temperature ferromagnetisms (RTFMs). The conceivable origin of the RTFM is ascribed to the combined effects of the local structural disorder resulted from (Co2+, Cu2+, Cu1+)-cations which substitute Zn2+ ions in the ZnO matrices, ferromagnetic coupling between coupled dopant atoms caused by Co2+ (3d74s0) and Cu2+ (3d94s0) spin states, and exchange interactions between the unpaired electron spins originating from lattice defects induced by Cu doping in the Zn0.95Co0.05O matrices. 相似文献
13.
Zn0.98−xCuxV0.02O (x=0, 0.01, 0.02 and 0.03) samples were synthesized by the sol–gel technology to dope up to 3% Cu in ZnO. Investigations of structural, optical and magnetic properties of the samples have been done. The results of X-ray diffraction (XRD), transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS) indicated that the V and Cu ions were incorporated into the crystal lattices of ZnO. With Cu doping concentration increasing up to 2 at%, the XRD results showed that all diffraction peaks corresponded to the wurtzite structure of ZnO. Photoluminescence (PL) measurements showed that Zn0.98−xCuxV0.02O powders exhibited that the position of the ultraviolet (UV) emission peak of the samples showed an obvious red-shift and the green emission peak enhanced significantly with Cu doping in ZnVO nanoparticle. Magnetic measurements indicated that room temperature ferromagnetism (RTFM) of Zn0.98−xCuxV0.02O was an intrinsic property when Cu concentration was less than 3 at%. The saturation magnetization (Ms) of Zn0.98−xCuxV0.02O (x=0, 0.01 and 0.02) increased with the increase of the Cu concentration. 相似文献
14.
Gaurav Shukla 《Applied Physics A: Materials Science & Processing》2009,97(1):115-118
In this paper, we report on pulsed laser deposition of n-type Cu-doped ZnO thin films on c-plane sapphire substrates at 700°C.
XRD and HRTEM were employed to study the epitaxial growth relationship between the Zn1−x
Cu
x
O film and sapphire substrate. Absorption measurements showed excitonic nature of the thin films and a decrease in the bandgap
energy with increased Cu concentration was observed. Such as-deposited films showed room temperature ferromagnetism with Curie
temperature (T
c
) at around 320 K. The moment per Cu atom decreases as the Cu concentration increases. The largest magnetic moment about 0.81μ
B
/Cu atom was observed for Zn0.95Cu0.05O thin films. The presence of any magnetic second phase was ruled out and the ferromagnetism was attributed to Cu ions substituted
directly into the ZnO lattice. 相似文献
15.
In this investigation ZnFe2O4 thin films were fabricated by RF magnetron sputtering and the magnetic behavior was examined under the influence of the growth conditions in three types of atmospheres, using near-ambient pressure X-ray photoelectron spectroscopy (NAP-XPS) and vibrating sample magnetometry (VSM). XPS revealed that films under an Ar/O2 ratio 1:2 and 2:1 have Fe/Zn atomic ratios similar to the Fe/Zn stoichiometric composition; while the films deposited in pure Ar atmosphere, showed a formation of Fe ions (Fe0) reduced by Ar ion sputtering. VSM revealed an enhancing of the saturation magnetization for the ZFO in thin films unlike the samples in bulk, suggesting that Fe ions migrate to A sites and the interaction JAB dominates the magnetic properties instead of JBB interaction. 相似文献
16.
Guang Yang Aiping Chen Ming Fu Hua Long Peixiang Lu 《Applied Physics A: Materials Science & Processing》2011,104(1):171-175
By controlling the oxygen pressure, single-phase CuO and Cu2O thin films have been obtained on quartz substrates using a pulsed laser deposition technique. The structure properties and
linear optical absorption of the films were characterized by X-ray diffraction and UV–VIS spectroscopy. By performing z-scan measurements using a femtosecond laser (800 nm, 50 fs), the real and imaginary parts of the third-order nonlinear susceptibility,
Re χ
(3) and Im χ
(3), of the films were determined. Both CuO and Cu2O films exhibited large optical nonlinearities, which is comparable to those in some representative semiconductor films such
as ZnO and GaN films using femtosecond laser excitation. Compared with Cu2O films, the CuO films showed larger third-order nonlinear optical effects under off-resonance excitation. Furthermore, the
mechanisms of the optical nonlinearities in CuO and Cu2O films are explained in the main text. It was suggested that the reasons of the difference in their nonlinear refractive
effects may be related to the different electronic structure in CuO and Cu2O materials. 相似文献
17.
Jing Li Yinzhu Jiang Guohua Bai Tianyu Ma Deren Yang Youwei Du Mi Yan 《Applied Physics A: Materials Science & Processing》2014,115(3):997-1001
Amorphous MgO thin films were prepared by pulsed laser deposition (PLD) under various oxygen pressures. The structural, magnetic, and optical properties of the films were investigated. All as-deposited samples exhibit room temperature ferromagnetism, which depend strongly on oxygen pressure. It is found that the saturation magnetization (M s) initially increases with the oxygen pressure, the maximum M s of 8.57 emu/cm3 is obtained for the MgO film deposited under an oxygen pressure of 2 mTorr. However, the M s significantly reduces at higher oxygen pressures. Further X-ray photoelectron spectroscopy and photoluminescence demonstrate that the long-range magnetic order in amorphous MgO films can be attributed to the nonstoichiometry effect and the presence of Mg vacancies. 相似文献
18.
ZnO thin films were prepared on soda-lime glass from a single spin-coating deposition of a sol-gel prepared with anhydrous zinc acetate [Zn(C2H3O2)2], monoethanolamine [H2NC2H4OH] and isopropanol. The deposited films were dried at 50 and 300 °C. X-ray analysis showed that the films were amorphous. Laser annealing was performed using an excimer laser. The laser pulse repetition rate was 25 Hz with a pulse energy of 5.9 mJ, giving a fluence of 225 mJ cm−2 on the ZnO film. Typically, five laser pulses per unit area of the film were used. After laser processing, the hexagonal wurtzite phase of zinc oxide was observed from X-ray diffraction pattern analysis. The thin films had a transparency of greater than 70% in the visible region. The optical band-gap energy was 3.454 eV. Scanning electron microscopy and profilometry analysis highlighted the change in morphology that occurred as a result of laser processing. This comparative study shows that our sol-gel processing route differs significantly from ZnO sol-gel films prepared by conventional furnace annealing which requires temperatures above 450 °C for the formation of crystalline ZnO. 相似文献
19.
In order to obtain p-type ZnO thin films, effect of atomic ratio of Zn:N:Al on the electronic and structural characteristic of ZnO thin films was investigated. Hall measurement indicated that with the increase of Al doping, conductive type of as-grown ZnO thin films changed from n-type to p-type and then to n-type again, reasons are discussed in details. Results of X-ray diffraction revealed that co-doped ZnO thin films have similar crystallization characteristic (0 0 2 preferential orientation) like that of un-doping. However, SEM measurement indicated that co-doped ZnO thin films have different surface morphology compared with un-doped ZnO thin films. p-type ZnO thin films with high hole concentration were obtained on glass (4.6 × 1018 cm−3) and n-type silicon (7.51 × 1019 cm−3), respectively. 相似文献
20.
Pristine ZnO thin films have been deposited with zinc acetate [Zn(CH3COO)2], mono-ethanolamine (stabilizer), and isopropanol solutions by sol-gel method. After deposition, pristine ZnO thin films have been irradiated by excimer laser (λ = 248, KrF) source with energy density of 50 mJ/cm2 for 30 sec. The effect of excimer laser annealing on the optical and structural properties of ZnO thin films are investigated by photoluminescence and field emission scanning electron microscope. As-grown ZnO thin films show a huge peak of visible region and a wide full width at half maximum (FWHM) of UV region due to low quality with amorphous ZnO thin films. After KrF excimer laser annealing, ZnO thin films show intense near-band-edge (NBE) emission and weak deep-level emission. The optically improved pristine ZnO thin films have demonstrated that excimer laser annealing is novel treatment process at room temperature. 相似文献