Application of indium tin oxide (ITO) thin film as a low emissivity film on Ni-based alloy at high temperature

Indium tin oxide (ITO) films as the low emissivity coatings of Ni-based alloy at high temperature were studies. ITO films were deposited on the polished surface of alloy K424 by direct current magnetron sputtering. These ITO-coated samples were heat-treated in air at 600–900 °C for 150 h to explore the effect of high temperature environment on the emissivity. The samples were analyzed by X-ray diffraction (XRD), SEM and EDS. The results show that the surface of sample is integrity after heat processing at 700 °C and below it. A small amount of fine crack is observed on the surface of sample heated at 800 °C and Ti oxide appears. There are lots of fine cracks on the sample annealed at 900 °C and a large number of various oxides are detected. The average infrared emissivities at 3–5 μm and 8–14 μm wavebands were tested by an infrared emissivity measurement instrument. The results show the emissivity of the sample after annealed at 600 and 700 °C is still kept at a low value as the sample before annealed. The ITO film can be used as a low emissivity coating of super alloy K424 up to 700 °C.     

Studies on the electrochemiluminescent behavior of luminol on indium tin oxide (ITO) glass

The electrochemiluminescence (ECL) of luminol on indium tin oxide (ITO) glass was high even under a low potential around 0.4-0.5 V, which was quite different from other electrodes such as platinum. ITO nanoparticles were synthesized and used in the research on ITO glass in the ECL process. A static interaction between ITO and luminol is confirmed from UV-vis and fluorescence spectra. Then the ECL enhancement can be supposed to originate from the adsorption of luminol on ITO, which facilitated luminol’s oxidization to the excited state, giving out ECL. On the other hand, ITO can catalyze the generation of reactive oxygen species (ROSs), similar to some other nanomaterials, which also favored the ECL enhancement of luminol.     

Effect of the heat treatment on the infrared emissivity of indium tin oxide (ITO) films

Indium tin oxide (ITO) films were deposited on glass substrates at temperatures ranging from 100 °C to 400 °C by direct current magnetron sputtering. The mean infrared emissivities at the waveband of 8-14 μm were measured in process of heating and cooling between room temperature and 350 °C. Microstructure and phases of ITO films before (Group A) and after (Group B) heat treatment were characterized by SEM and XRD, respectively. Electrical properties were characterized with a four-point probe method and by Hall measurement system. During heat treatment, the infrared emissivity of the film increases with the increase of temperature, and decreases with the decrease of temperature. While, the infrared emissivity of the films decreases slightly around 250 °C in heating process. On the other hand, after heat treatment, the crystalline phases of the films have no obvious change. However, both the resistivity and the infrared emissivity of all films decrease.     

Indium tin oxide sol-gel precursor conversion process using the third harmonics of Nd:YAG laser

We use the third harmonics of Nd:YAG laser (λ = 355 nm) for simultaneous precursor conversion and dopant activation on sol-gel ITO thin films at a laser fluence range of 700-1000 mJ/cm². A minimum resistivity of 5.37 × 10⁻² Ω-cm with a corresponding carrier concentration of 6 × 10¹⁹ cm⁻³ is achieved at laser irradiation fluence of 900 mJ/cm². X-ray photoelectron analysis reveals that extremely high tin concentration of 19.4 at.% and above is presented in the laser-cured ITO thin films compared with 8.7 at.% in the 500 °C thermally cured counterpart. These excess tin-ions form complex defects, which contribute no free carriers but act as scattering centers, causing inferior electrical properties of the laser-cured films in comparison with the thermally cured ones.     

Effect of the duty ratio on the indium tin oxide (ITO) film deposited by in-line pulsed DC magnetron sputtering method for resistive touch panel

The indium tin oxide (ITO) film was deposited on PET (polyethylene terephthalate) film using in-line pulsed DC magnetron sputtering system with different duty ratios. The reverse time and the frequency of pulsed DC power were changed to obtain the different duty ratios. From the electrical and optical properties such as the sheet resistance, resistivity, thickness and transmittance, the pulsed DC sputtered ITO/PET films were also superior to the DC sputtered ITO/PET films. The reverse time had little effect on the properties of the ITO/PET film and the frequency of pulsed DC power had an immerse effect on the properties of the ITO/PET films. The optimal ITO/PET film was obtained when the frequency was 200 kHz, the reverse time was 1 μs, and the duty ratio was about 80%.     

Ellipsometry investigation of the effects of annealing temperature on the optical properties of indium tin oxide thin films studied by Drude-Lorentz model

Float glass substrates covered by high quality ITO thin films (Balzers) were subjected for an hour to single thermal treatments at different temperature between 100 °C and 600 °C. In order to study the electric and optical properties of both annealed and not annealed ITO-covered float glasses, ellipsometry, spectrophotometry, impedance analysis, and X-ray measurements were performed. Moreover, variable angle spectroscopic ellipsometry provides relevant information on the electronic and optical properties of the samples. ITO film is modeled as a dense lower layer and a surface roughness layer. The estimated optical density for ITO and the optical density of the surface roughness ITO layer increases with the annealing temperature. In the near-IR range, the extinction coefficient decreases while the maximum of the absorption in the near UV range shift towards low photon energy as the annealing temperature increases. Spectrophotometry was used to estimate the optical band-gap energy of the samples. The thermal annealing changes strongly the structural and optical properties of ITO thin films, because during the thermal processes, the ITO thin film absorbs oxygen from air. This oxygen absorption decreases the oxygen vacancies therefore the defect densities in the crystalline structure of the ITO thin films also decrease, as confirmed both by ellipsometry and X-ray measurements.     

Laser scribing of indium tin oxide (ITO) thin films deposited on various substrates for touch panels

In this study, a Nd:YAG laser with wavelength of 1064 nm is used to scribe the indium tin oxide (ITO) thin films coated on three types of substrate materials, i.e. soda-lime glass, polycarbonate (PC), and cyclic-olefin-copolymer (COC) materials with thickness of 20 nm, 30 nm, and 20 nm, respectively. The effect of exposure time adjusted from 10 μs to 100 μs on the ablated mark width, depth, and electrical properties of the scribed film was investigated. The maximum laser power of 2.2 W was used to scribe these thin films. In addition, the surface morphology, surface reaction, surface roughness, optical properties, and electrical conductivity properties were measured by a scanning electron microscope, a three-dimensional confocal laser scanning microscope, an atomic force microscope, and a four-point probe. The measured results of surface morphology show that the residual ITO layer was produced on the scribed path with the laser exposure time at 10 μs and 20 μs. The better edge qualities of the scribed lines can be obtained when the exposure time extends from 30 μs to 60 μs. When the laser exposure time is longer than 60 μs, the partially burned areas of the scribed thin films on PC and COC substrates are observed. Moreover, the isolated line width and resistivity values increase when the laser exposure time increases.     

The insert of zinc oxide thin film in indium tin oxide anode for organic electroluminescence devices

Zinc oxide films were prepared by rf magnetron sputtering on glass substrates with designed ZnO target using high-purity of zinc oxide (99.99%) powder. Systematic study on dependence of target-to-substrate distance (D_ts) on structural, electrical and optical properties of the as-grown ZnO films was mainly investigated in this work. XRD showed that highly preferred ZnO crystal in the [0 0 1] direction was grown in parallel to the substrate, while the D_ts did not effect to the peak position of XRD. With decreasing D_ts, the growth rate is increased while the electrical resistivity as well as crystal size in the ZnO films was decreased. The XPS data showed that the O/Zn ratio in ZnO films was increased with increasing D_ts in the films. The as-grown ZnO films have an average transmittance of above 85% at the visible region. The optical band gap of the as-grown ZnO films was changed from 3.18 to 3.36 eV with D_ts. With decreasing D_ts, the electrical resistivity was decreased, while the growth rate was increased.A bilayer is used as an anode electrode for organic electroluminescent devices. The bilayer consists of an ultrathin ZnO layer adjacent to a hole-transporting layer and an Indium tin oxide (ITO) outerlayer. We tried to bring low the barrier between the devices as deposited ZnO films on ITO substrates. We fabricated the organic EL structure consisted of Al as a cathode, Al₂O₃ as an electro transport layer, Alq₃ as a luminously layer, TPD as a hole transport layer and ZnO (1 nm)/ITO (150 nm) as an anode. The result of this experiment was not good compared with the case of using ITO, nevertheless, at this structure we obtained the lowest turn-on voltage as the value of 19 V and the good brightness (6200 cd/m²) of the emission light from the devices. Then the quantum efficiency was to be 1.0%.     

非晶铟锌氧化物薄膜晶体管的低频噪声特性与分析

本文针对底栅结构非晶铟锌氧化物薄膜晶体管的低频噪声特性开展实验与理论研究.由实验结果可知:受铟锌氧化物与二氧化硅界面处缺陷态俘获与释放载流子效应的影响,器件沟道电流噪声功率谱密度随频率的变化遵循1/fγ(γ≈0.75)的变化规律;此外,器件沟道电流归一化噪声功率谱密度随沟道长度与沟道宽度的增加而减小,证明器件低频噪声来源于沟道的闪烁噪声,可忽略源漏结接触及寄生电阻对器件低频噪声的影响.最后,基于载流子数涨落及迁移率涨落模型,提取γ因子与平均Hooge因子,为评价材料及器件特性奠定基础.     

Electrical and optical properties of indium tin oxide/epoxy composite film

The electrical and optical properties of the indium tin oxide(ITO)/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature.The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.     

The effect of carbon contamination and argon ion sputtering on the work function of chlorinated indium tin oxide

The work function of indium tin oxide (ITO) was increased by treating ITO with dichlorobenzene with UV light. Carbon contamination of the Cl-ITO was measured using X-ray Photoelectron Spectroscopy (XPS) and argon ion sputtering was used to remove the carbon from the surface. It was found that the carbon contamination from residual dichlorobenzene significantly lowered the work function of the ITO and after argon ion sputtering the work function increased to 5.8 eV. It was found that chlorination of ITO occurs after more than 6 min of UV exposure. Further sputtering of ITO resulted in the removal of the functionalized chlorine, the introduction of argon ion contaminants on the ITO decreases its work function.     

F2-laser patterning of indium tin oxide (ITO) thin film on glass substrate

This paper reports the controlled micromachining of 100 nm thick indium tin oxide (ITO) thin films on glass substrates with a vacuum-ultraviolet 157 nm F₂ laser. Partial to complete film removal was observed over a wide fluence window from 0.49 J/cm² to an optimized single pulse fluence of 4.5 J/cm² for complete film removal. Optical microscopy, atomic force microscopy, and energy dispersive X-ray analysis show little substrate or collateral damage by the laser pulse which conserved the stoichiometry, optical transparency and electrical conductivity of ITO coating adjacent to the trenches. At higher fluence, a parallel micron sized channel can be etched in the glass substrate. The high photon energy and top-hat beam homogenized optical system of the F₂ laser opens new means for direct structuring of electrodes and microchannels in biological microfluidic systems or in optoelectronics. PACS 79.20.Ds; 42.62.Cf; 42.55.Lc     

Band bending at the conducting polymer/indium tin oxide interfaces with and without ultraviolet treatment

In this study, the effect of ultraviolet treatment on the band bending at the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/indium tin oxide (PEDOT:PSS/ITO) interfaces were researched. The authors suggested that ultraviolet treatment could lead to a reduction in the band bending at the PEDOT:PSS/ITO interface, owing to the removal of carbon contamination at the ITO surfaces and a decrease in the number of the trap-states at the PEDOT:PSS/ITO interface.     

Reduced graphene oxide field-effect transistor with indium tin oxide extended gate for proton sensing

In this study, the reduced graphene oxide field-effect transistor (rGO FET) with indium tin oxide (ITO) extended gate electrode was demonstrated as a transducer for proton sensing application. In this structure, the proton sensing area of the ITO extended gate electrode is isolated from the active area of the rGO FET. The proton sensing properties based on the rGO FET transducer were analyzed. The rGO FET device with encapsulation by a tetratetracontane (TTC) layer showed good stability in electrolytic solutions. The device showed an ambipolar behavior with shifts in Dirac point as the pH of the electrolyte is varied. The pH sensitivity based on the Dirac point shift as a sensing parameter was about 43–50 mV/pH for a wide range of pH values from 2 to 12. The ITO extended gate rGO FET may be considered a potential transducer for sensing of H⁺ in electrolytes. Its sensing area can be modified further for various ions sensing applications.     

Transparent titania nanotubes of micrometer length prepared by anodization of titanium thin film deposited on ITO

Transparent TiO₂ nanotube arrays of micrometer lengths were prepared by anodization of titanium thin film RF sputtered on indium tin oxide (ITO) which was coated on glass substrate. The sputtering process took place at elevated temperature of 500 °C. The structures of the films were studied using scanning electron microscopy (SEM) and X-ray diffraction (XRD) while the optical properties of the films were investigated using UV-visible spectroscopy. Two types of electrolytes were used in this work: an aqueous mixture of acetic acid and HF solution and a mixture of NH₄F and water dissolved in ethylene glycol. The concentration of NH₄F, voltage and the thickness of the sputtered titanium film were varied to study their effect on the formation of TiO₂ nanotube arrays. It is demonstrated in this work that the nanoporous layer is formed on top of the ordered array of TiO₂ nanotubes. Furthermore, the optical transmittance of TiO₂ nanotubes annealed at 450 °C is much lower than the non annealed TiO₂ nanotubes in the visible wavelength region.     

Pulsed laser ablation of indium tin oxide in the nano and femtosecond regime: Characterization of transient species

Tin doped indium oxide (ITO) is a n-type highly degenerate, wide band-gap semiconductor that is extensively used for many engineering applications. Pulsed laser ablation of indium tin oxide in the nano and femtosecond regime has been performed in our laboratory. Plume diagnostics has been carried out by means of a fast Intensified Coupled Charge Device (ICCD) camera. Optical emission spectroscopy has been applied to characterize the transient species produced in the nano and femtosecond regime. The time evolution of emission lines, in the femto and nanosecond regime, have been compared and discussed. In the mass spectrometry, of the ionized species, the presence of mixed metal oxide clusters has been detected. This fact is an indication that chemical reactions can occur during the plasma expansion or on the ITO surface.     

A study of stitch line formation during high speed laser patterning of thin film indium tin oxide transparent electrodes

High speed laser patterning of indium tin oxide thin films on glass is part of the production method used to produce transparent conductive electrodes for plasma display panels. Such a design consists of rows of repeating electrode structures which cover the active area of the display. Whilst the patterning process for such electrode structures exceeds the industrial acceptance criteria there are certain features that are yet to be fully understood. The visible line that occurs in-between two adjacent laser processed areas, commonly known as a stitch line, is one such feature. Previously published research claimed that the stitch line was caused by incomplete removal of the thin film however experimental results presented within this paper demonstrate that this cannot be the case and show that the stitch line is formed by redeposition of the plume of ablated material within the area of overlap with the previous pulse, and that heating of the sample by the second pulse plays a key role in stitch line formation.     

Adsorption and electrically stimulated desorption of the triblock copolymer poly(propylene sulfide-bl-ethylene glycol) (PPS-PEG) from indium tin oxide (ITO) surfaces

Protein-resistant triblock copolymers, poly(propylene sulfide-bl-ethylene glycol) (PPS-PEG) have been previously demonstrated to chemisorb onto gold surfaces forming monolayers that resist non-specific protein adsorption and are stable against oxidation. In this paper, we report on the adsorption of PPS-PEG onto a transparent and electrically conductive substrate, indium tin oxide (ITO). In addition, we demonstrate the controlled desorption of PPS-PEG by applying an electrical stimulus. We have used three complementary surface characterization techniques: variable angle spectroscopic ellipsometry (VASE), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) to analyze the adsorption and electro-desorption of PPS-PEG from an ITO surface. All three methods confirmed the formation of PPS-PEG adlayers on the ITO surfaces. Based on our experimental XPS and ToF-SIMS results as well as former publications, we postulate that the chemisorption of the PPS-PEG on ITO involves direct sulfide-indium (or tin) interactions. When an ascending anodic electrical stimulus was applied to the surface of the modified samples, a gradual and steady polymer removal was observed, with complete loss of the polymeric monolayer at a potential of 2000 mV (referenced to Ag electrode). Anodic polarization did not result in oxidation of the thioether function of the PPS-PEG adlayers, indicating excellent oxidation resistance of PPS-PEG on ITO surfaces. This work is focused on exploiting electrical stimuli for the in situ surface modification under dynamic control.     

Surface modification of indium tin oxide films by amino ion implantation for the attachment of multi-wall carbon nanotubes

Amino ion implantation was carried out at the energy of 80 keV with fluence of 5 × 10¹⁵ ions cm⁻² for indium tin oxide film (ITO) coated glass, and the existence of amino group on the ITO surface was verified by X-ray photoelectron spectroscopy analysis and Fourier transform infrared spectra. Scanning electron microscopy images show that multi-wall carbon nanotubes (MWCNTs) directly attached to the amino ion implanted ITO (NH₂/ITO) surface homogeneously and stably. The resulting MWCNTs-attached NH₂/ITO (MWCNTs/NH₂/ITO) substrate can be used as electrode material. Cyclic voltammetry results indicate that the MWCNTs/NH₂/ITO electrode shows excellent electrochemical properties and obvious electrocatalytic activity towards uric acid, thus this material is expected to have potential in electrochemical analysis and biosensors.     

Synthesis of P-type transparent conducting silver:indium oxide (AIO) thin films by reactive electron beam evaporation technique

Present paper reports the synthesis, electrical and optical properties of p-type conducting and transparent silver indium oxide (AIO) thin films prepared on glass substrates by reactive electron beam evaporation technique at three substrate temperatures (50, 200 and 250 °C) and at five evaporation rates (0.05 to 16.0 nm/s). The source material is pure powders of Ag₂O:In₂O₃=50:50 mol%. The AIO films are amorphous. The films, though not corresponding to Delafossite crystal structure, exhibit p-type conductivity, when prepared at an evaporation rate of 0.05 nm/s at all the three substrate temperatures. With increasing filament current, it is observed that (i) the electrical resistivity decreases and (ii) the refractive index of the films (at 632.8 nm, and is in the range: 1.219-1.211) decreases. The work function (effective Fermi level) has been measured on these samples by Kelvin Probe method. The results are explained on the basis of partial ionic charge and localization of covalent bonds in the AIO thin films.