晶格常数与掺杂MgB2体系超导电性及硬度均衡值ηcp的关系

依据现有的MgB2掺杂实验,通过对掺杂MgB2体系超导电性与其晶格常数的研究,发现具有较好的规律性.因此本文提出用晶格常数作为掺杂MgB2超导电性的一个判断标准.为了得到晶格常数随掺杂元素及掺杂比例的变化规律,我们又研究了晶胞体积与掺杂MgB2体系硬度均衡值ηcp的关系,发现也具有较好的规律性.这些结果对掺杂二硼化镁超导电性的研究工作及今后实验工作者掺杂元素和掺杂比例的选取都有很好的指导意义.     

平均价电子数与掺杂Y_1Ba_2Cu_3O_(7-δ)体系超导电性的关系

文中尝试引进平均价电子数对掺杂Y1Ba2Cu3O7-δ(YBCO)体系超导电性进行分析。结果表明,掺杂YB-CO体系的平均价电子数Zv与转变温度Tc、临界电流密度Jc之间有较好高斯分布规律。因此,提出用平均价电子数作为提高掺杂YBCO体系超导电性的一个新依据。这对今后制备出具有更高Tc、Jc的掺杂YBCO超导氧化物有很好的指导意义。     

磁性离子Fe和Ni替代YBCO体系的结构特征和载流子局域化

为阐明磁性离子在不同替代位置对YBCO体系超导电性的影响机制，利用正电子湮没及相关实验手段结合数值模拟，系统研究了Fe和Ni掺杂的YBa₂Cu₃O_7-δ体系. 结果表明，Fe和Ni离子在替代过程中均以离子团簇的形式进入晶格. 当离子进入CuO₂面时，由于团簇改变了周围的电子结构，造成电子的局域化，并直接影响了电子对的配对和输运，因而强烈抑制了体系的超导电性.而当掺杂离子进入Cu-O链区时，它们同样通过团簇的形式改变周围 关键词： YBCO超导体 磁性离子替代 正电子湮没 数值模拟     

MgB2中Mn元素掺杂引起的无序

我们合成了Mn掺杂的MgB2的多晶样品Mg1-xM2xB2(x=0,0.01,0.02,0.03,0.04),并测量了相关的超导电性,发现超导转变温度随着Mn含量的增加急剧下降.晶格常数a、b基本上保持不变,而晶格常数c却随着掺杂量的增加而减小,通过对比Mn、Fe、Al掺杂引起的晶格常数c的变化,我们得出Mn是以三价的形式进人MgB2晶格,Mn掺杂引入的无序导致Raman峰宽随着Mn掺杂量的增加而增大,同时也抵消了Mn3 引入的电子填充效应,从而使Raman峰位并没有随Mn掺杂量的增加而发生明显移动.     

Fe和Co离子在YBCO中团簇效应的理论和实验研究

通过数值模拟计算和正电子湮没等方法,系统研究了磁性离子Fe和Co掺杂的YBCO系列样品,结果表明,小掺杂量时离子以分散形式存在,随着掺杂量增大,离子以不同的团簇形式进入晶格,并通过团簇带入氧离子.在Cu-O链区域六离子团簇出现的几率最大,团簇效应抑制了空穴载流子的产生及其向CuO2面区域的转移,弱化了载流子库的功能.然而由于它们仅间接影响了电子的配对和输运,因而对超导电性抑制较弱.另外,通过与非磁性离子掺杂效应等因素比较,显示出Fe和Co掺杂对超导电性抑制与其磁性没有直接关联.     

热超高压处理YBCO超导体的拉曼光谱

本文用激光拉曼光谱研究经热超高压处理的YBCO氧化物超导体材料的结构特征。光谱数据表明该工艺过程除了改善YBCO氧化物超导体的物理性能外还有利于YBCO微观构型中正交相的相结构更趋完整，晶格有序度的加强以及二维CuO2网络的形成，讨论了结构变化和超导电性的关系。     

第一性原理计算MgB2薄膜拉伸对超导电性的影响

应用全势线性响应线性糕模轨道方法计算MgB2的电子能带结构、声子谱及电声子耦合常数,并讨论MgB2的超导电性.通过比较MgB2薄膜双轴拉伸前后超导电性的变化可以看出,随着a轴晶格常数增大和c轴晶格常数减小,声子谱中硼的E2g声子频率显著下降,使得电声子耦合强度λ和声子对数平均频率ωln增强,提高了MgB2薄膜的超导转变温度.理论计算结果与文献中的实验测量结果相符.     

不同烧结温度对SnO2掺杂下的Y1Ba2Cu3O7-δ超导电性的影响

采用固相反应法制作了在不同烧结温度对Sn掺杂下的YBCO一系列样品.本文采用了X-射线衍射仪,电阻测量和SEM对样品物相形成,微观结构,晶格常数以及超导转变温度进行表征,测量结果表明:不同的烧结温度会影响Sn离子的形式,随着温度的升高,Y-123峰明显减弱,杂峰相增多.本文分析了晶格常数与超导性存在必然联系,SEM结果表明第二相粒子的形成以及表面形貌都与温度有关.     

YBCO系超导陶瓷的掺杂研究

本文研究了掺杂 SnO_2对 YBCO 系超导陶瓷的制备工艺、烧结机制、显微结构及超导电性等的影响.结果表明适量 SnO_2掺杂有助于材料致密化,改善材料的烧结质量,且可显著提高该系材料的临界电流密度,文章对此作了初步讨论.     

Y_2O_3缓冲层对YBCO超导转变温度的影响（英文）

超导薄膜所受的应力对其临界转变温度Tc具有重要的影响,研究应力对超导薄膜Tc的影响对获得更高Tc材料具有重要意义.本文采用溶胶-凝胶法,在LAO单晶基板上制备了Y2O3/YBCO薄膜,并研究了Y2O3缓冲层对不同厚度YBCO超导薄膜的临界转变温度的影响.研究发现,当YBCO薄膜厚度为90nm时,由于Y2O3和YBCO薄膜的晶格错配,在YBCO/Y2O3薄膜的a-b面内引入了压应力,增加了c轴的晶格常数,结果提高了YBCO薄膜的临界转变温度.当YBCO薄膜的厚度较大时(如230nm),由晶格错配引起的应力通过位错的形式得以释放,YBCO薄膜的Tc变化不大.     

金属有机溶剂法Y1Ba2Cu3O7-δ超导薄膜的Ce掺杂效应

通过三氟乙酸盐-金属有机物沉积方法（TFA-MOD）研究了Ce掺杂对钇钡铜氧（YBCO）超导薄膜性能的影响.观察到10 mol%Ce掺杂使YBCO超导薄膜的c轴取相降低,出现明显的a轴晶粒,薄膜表面变得粗糙.尽管超导临界温度稍有减小,其超导临界电流密度（Jc）在高磁场下性能获得了有效提高,当外磁场强度达到2T时,超导薄...     

HREM study of the YBCO/MgO interface on an atomic scale

The film-substrate interface of c oriented YBCO thin films grown by sputtering or laser ablation on (001) MgO substrate has been investigated with high-resolution electron microscopy. The first atomic plane of the YBCO lattice is a CuO chain layer. Two interface configurations occur: (1) the YBCO lattice and the MgO lattice continue up to the interface (this configuration is occasionally associated with some periodic strain in the MgO lattice; (2) the YBCO lattice and the MgO lattice are separated by an (almost) amorphous layer with a thickness of the order of two atomic layers. This amorphous layer is found to lead to the absence of strain. In some cases the surface roughness coincided with misoriented grains but most of the steps in the MgO substrate were accommodated by steps in the YBCO of one or more complete unit cells in height and some lattice bending in the YBCO film.     

Y2Ba4CuWOx掺杂对单畴YBCO块材微观结构及超导性能的影响

为了研究掺杂Y-W2411(Y2Ba4CuWOx)对单畴YBCO超导块材磁通钉扎能力的影响.应用顶部籽晶-熔融织构法(TS-MTG)制备出了掺杂纳米Y-W2411的单畴块材.通过实验发现不同量的掺杂会对样品的宏观形貌及磁悬浮力产生不同的影响.当掺杂量x≤8时,样品基本可以生长成单畴的超导块材,且样品的磁悬浮力随着Y-W2411掺杂量的增加先增大后减小.当x=2wt%时,样品磁悬浮力最大.样品的电镜扫描结果(SEM)表明成功地在Y-123(YBa2Cu3O7)基体中嵌入了Y-W2411粒子.     

Role of beryllium doping in strain changes in II-type InAs/GaSb superlattice investigated by high resolution X-ray diffraction method

We have studied the influence of the beryllium doping on strain in the II-type InAs/GaSb superlattices (SLs) by means of high-resolution X-ray diffraction (HRXRD). Three analyzed superlattices were grown by molecular beam epitaxy. One of the examined superlattices was undoped. Two others structures, called doped SLs, composed of two superlattices: Be-doped and undoped which were grown one on the top of each other. The doping concentration was determined by secondary ion mass spectroscopy. The doping level was 1×10¹⁷ cm^?3 and 2×10¹⁹ cm^?3. For doped superlattices, the HRXRD measurements showed splitting of satellite (ST) peaks. Furthermore, the separation of ST peaks increase with doping level. In contrast, for undoped superlattice, the splitting of the ST peaks was not observed. Sometimes the separation of ST peaks can be caused by change of thickness period of superlattice or partial relaxation of the structure. However, we claim that in our experiment the splitting is caused by another mechanism: The presence of Be atoms in SL causes the change of average lattice constant of the superlattice. The influence of Be dopant on lattice parameter of superlattice was confirmed by theoretical simulations. Furthermore, the change of the lattice constant (Δa/a) of the GaSb:Be buffer was examined. The reduction of lattice parameter of GaSb was noticed. It was caused by the presence of Be doping and unintentionally incorporated As-atoms in the GaSb layer. It is very important to know that even very small Be concentration (1×10¹⁷ cm^?3) causes the change of average lattice parameter of SL.     

Enhanced flux-pinning in fluorine-free MOD YBCO films by chemical doping

YBCO films without and with dilute cobalt and zinc doping were prepared on (0 0 l) LaAlO₃ substrate by non-fluorine metal organic deposition method. Effects of dilute cobalt and zinc doping on biaxial texture, microstructure and flux-pinning properties of YBCO films were investigated. The surface density and smoothness of the doped YBCO films have been distinctly improved compared with that of the pure film. Dilute cobalt- and zinc-doped YBCO films exhibit significantly enhanced J_c values in the magnetic field. The best result is achieved in the cobalt-doped YBCO film. At 77 K, J_c values of cobalt-doped film are 1.7 and 5.4 times higher than that of pure film in 0.5 T and 1.5 T, respectively. These results strongly suggest that dilute cobalt and zinc doping is a promising way to increase the current carrying capability of YBCO films.     

Superconducting Phase Diagram of the Yttrium,Barium, and YBa-core in YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7–δ</Subscript> by an Ising Model

We investigate the temperature dependent of magnetizations, hysteresis properties and present the superconducting phase diagrams of the YBa₂Cu₃O_7–δ (YBCO) by an Ising model within the effective-field theory. We obtain the magnetizations of the YBCO and its components (Cu1, Cu2, O1, O2, O3, O4, Ba, Y, CuO-shell, YBa-core, and total YBCO) versus the reduced temperature and external magnetic field. We find that the copper atoms have two different magnetizations (Cu1 and Cu2) and oxygen atoms have four different magnetizations (O1, O2, O3, O4) but yttrium and barium has one magnetization. The differences in the magnetizations of the copper and oxygen atoms result from the lattice location of them on the YBCO lattice. The magnetization of the Cu1 atoms is the lowest and the yttrium is highest than those of the others; hence magnetizations of the YBCO increase from the corner to inner of the orthorhombic YBCO lattice. We also find that the YBa-core, yttrium and barium atoms of the YBCO exhibit superconductivity behaviors. Therefore, Y–Ba core, yttrium and barium atoms have the superconducting phase diagram and it has Meissner, vortex, and normal states. It is also found that the upper critical coercive field (H_c2) and the critical vortex temperature (T_v) of the Ba are high than those of the Y and YBa-core.     

Ground-state properties of boron-doped diamond

Boron-doped diamond undergoes an insulator-metal or even a superconducting transition at some critical value of the dopant concentration. We study the equilibrium lattice parameter and bulk modulus of boron-doped diamond experimentally and in the framework of the density functional method for different levels of boron doping. We theoretically consider the possibility for the boron atoms to occupy both substitutional and interstitial positions and investigate their influence on the electronic structure of the material. The data suggest that boron softens the lattice, but softening due to substitutions of carbon with boron is much weaker than due to incorporation of boron into interstitial positions. Theoretical results obtained for substitution of carbon are in very good agreement with our experiment. We present a concentration dependence of the lattice parameter in boron-doped diamond, which can be used for to identify the levels of boron doping in future experiments. The text was submitted by the authors in English.     

葡萄糖掺杂MgB_2块材超导电性研究

本文采用化学溶液法制备了在不同热处理条件下葡萄糖掺杂的MgB2块材样品.并对样品的晶体结构及超导电性进行了系统分析.X射线衍射结果表明掺杂样品a轴方向上的晶格参数减小,说明MgB2晶格中部分硼原子被葡萄糖分解后的活性碳原子所替代.此外,在两种不同烧结温度下,5wt%C6H12O6掺杂量对Tc都有较小的抑制,但不可逆场和高场下的载流能力得到了提高.在10K,5T下,掺杂样品的临界电流密度可达104A/cm2,比纯样Jc值大2～3倍,这表明掺杂样品的磁通钉扎性能得到了有效改善.     

Metal-to-insulator crossover in YBa2Cu3Oy probed by low-temperature quasiparticle heat transport

It was recently demonstrated that in La2-xSrxCuO4 the magnetic-field (H) dependence of the low-temperature thermal conductivity kappa up to 16 T reflects whether the normal state under high magnetic field is a metal or an insulator. We measure the H dependence of kappa in YBa(2)Cu(3)O(y) (YBCO) at subkelvin temperatures for a wide doping range, and find that at low doping the kappa(H) behavior signifies the change in the ground state in this system as well. Surprisingly, the critical doping is found to be located deeply inside the underdoped region, about the hole doping of 0.07 hole/Cu; this critical doping is apparently related to the stripe correlations as revealed by the in-plane resistivity anisotropy.