Characterization of silicon doped with sodium upon high-voltage implantation

The depth distribution profiles of sodium atoms in silicon upon high-voltage implantation (ion energy, 300 keV; implantation dose, 5 × 10¹⁴ and 3 × 10¹⁵ cm ^?2) are investigated before and after annealing at temperatures in the range T _ann = 300–900°C (t _ann = 30 min). Ion implantation is performed with the use of a high-resistivity p-Si (ρ= 3–5 kΩ cm) grown by floating-zone melting. After implantation, the depth distribution profiles are characterized by an intense tail attributed to the incorporation of sodium atoms into channels upon their scattering from displaced silicon atoms. At an implantation dose of 3 × 10¹⁵ ions/cm², which is higher than the amorphization threshold of silicon, a segregation peak is observed on the left slope of the diffusion profile in the vicinity of the maximum after annealing at a temperature T _ann = 600°C. At an implantation dose of 5 × 10¹⁴ ions/cm², which is insufficient for silicon amorphization, no similar peak is observed. Annealing at a temperature T _ann = 700°C leads to a shift of the profile toward the surface of the sample. Annealing performed at temperatures T _ann ≥ 800°C results in a considerable loss of sodium atoms due to their diffusion toward the surface of the sample and subsequent evaporation. After annealing, only a small number of implanted atoms that are located far from the region of the most severe damages remain electrically active. It is demonstrated that, owing to the larger distance between the diffusion source and the surface of the sample, the superficial density of electrically active atoms in the diffusion layer upon high-voltage implantation of sodium ions is almost one order of magnitude higher than the corresponding density observed upon low-voltage implantation (50–70 keV). In this case, the volume concentration of donors near the surface of the sample increases by a factor of 5–10. The measured values of the effective diffusion parameters of sodium at annealing temperatures in the range T _ann = 525–900°C are as follows: D ₀ = 0.018 cm²/s and E _a = 1.29 eV/kT. These parameters are almost identical to those previously obtained in the case of low-voltage implantation.     

Swift heavy ion irradiation induced modification of BiFeO3 thin films prepared by sol-gel method

We report the preparation of multiferroic BiFeO₃ thin films on ITO coated glass substrates through sol-gel spin coating method followed by thermal annealing and their modification by swift heavy ion (SHI) irradiation. X-ray diffraction and Raman spectroscopy studies revealed amorphous nature of the as deposited films. Rhombohedral crystalline phase of BiFeO₃ evolved on annealing the films at 550°C. Both XRD and Raman studies indicated that SHI irradiation by 200 MeV Au ions result in fragmentation of particles and progressive amorphization with increasing irradiation fluence. The average crystallite size estimated from the XRD line width decreased from 38 nm in pristine sample annealed at 550°C to 29 nm on irradiating these films by 200 MeV Au ions at 1 × 10¹¹ ions cm⁻². Complete amorphization of the rhombohedral BiFeO₃ phase occurs at a fluence of 1 × 10¹² ions.cm⁻². Irradiation by another ion (200 MeV Ag) had the similar effect. For both the ions, the electronic energy loss exceeds the threshold electronic energy loss for creation of amorphized latent tracks in BiFeO₃.     

Features of the energy distribution of secondary particles upon the ion bombardment of graphite

The secondary emission of carbon atoms from the (0001) plane of graphite nanocrystallites bombarded with argon ions with energies of 1 and 10 keV and the incidence angle α = 45° is investigated. The unusual oscillating energy distributions of secondary C⁺ ions with main maxima E _max in the range of 40–60 eV and peaks corresponding to the energies E ₁ ≈ 20, 30, 70, 80, and 100 eV have been revealed. The C⁺ ion yield decreases, the energy spectrum increases, and the maximum E _max shifts to larger energies E ₁ with increasing emission angle (with respect to the normal to the surface). The secondary-ion emission from the (0001) face of graphite is numerically simulated with allowance for the charge exchange of secondary ions to obtain a qualitative explanation of the observed results.     

Interaction of low energy (5–10 keV) argon atoms and ions with a Cu(100) surface; Ion fraction,ionization and neutralization

The ion fractions η⁺ of low energy (5–10 keV) argon particles scattered from a Cu(100) surface, are measured with a time of flight spectrometer. Neutral as well as charged projectiles are used. The scattering angle θ is 30°. The results for different angles of incidence ψ and crystal directions are reported. For scattering in the 〈100〉 direction, with a ψ-value of 15° and a primary energy E₀ of 5 and 10 keV, the ion fractions for the quasi single scattering peak, η⁺_QS, are 1.5 and 6.1% respectively. When E₀ is between 5 and 10 keV a reionization process with a constant reionization probability occurs during the violent interaction. This process, but also neutralization along the outgoing trajectory, determines η⁺_QS. With ions as projectiles, an energy difference of about 16 eV is observed between the quasi single scattering peaks in the spectra of all scattered particles and of ions only. The ion fraction for the quasi double scattering peak, η⁺_QD. depends largely upon E₀, indicating that the efficiency of the reionization process increases with E₀. A qualitative discussion of the data is given, using the reionization process and the interatomic neutralization processes along the trajectory of the scattered particles.     

A study of the influence of surface layers’ disordering on the spectrum of energy losses of electrons passed through copper thin single crystal films

Results of the experimental investigation of energy losses of electron passed through thin films Cu (100) with a thickness of d ≈ 420 ? at E _p = 3 keV are presented. It is revealed that the surface plasmon peak disappears at a primary electron energy of ≥6 keV. For the first time, the degree of surface amorphization and area of the disordered layer are estimated by the change of elastic peak intensity during the passage of electrons through thin films of Cu (100). There is an additional energy loss of electrons peak caused by bulk plasmon, its intensity depending on the irradiation dose under ionic bombardment.     

Low-energy ion scattering by monatomic films

The angular and energy distributions of Cs⁺ and Xe⁺ ions scattered by monatomic crystalline films have been calculated via the molecular dynamics method in the scope of the multiparticle interaction mechanism. The calculated dependences of scattered heavy ions with a low initial energy E ₀ = 40 eV on the atomic mass, crystal lattice type, interatomic distance, and binding energy of the film atoms are discussed and compared with the experiment. The presented data can be used to predict the physical properties of a surface covered with a monatomic layer of foreign atoms during experimental surface studies based on the backscattering of ions with low initial energies.     

Scattering of low energy Na+ ions from a clean polycrystalline Ag surface

The energy distributions of low energy (E₀ = 0.4–3.2 keV) Na⁺ ions scattered from a clean polycrystalline Ag surface were measured. The angle between the incident beam and the surface was fixed at ψ = 45° while the scattering angle (θ) ranged from 50 to 130°. The cleanliness of the surface during the measurement was maintained by simultaneous deposition of Ag atoms from an effusion source. The obtained distributions considerably differ from the corresponding distributions of noble ions. Firstly, for all measured values of E₀ and θ, an intensive hump is observed in the high energy part of the distribution. In certain cases this hump is transformed into a peak. Secondly, the low energy part of the distribution is very pronounced, especially for higher values of E₀ and θ.     

Angular distribution of atoms sputtered from germanium by 1–20 keV Ar ions

The angular distribution of atoms sputtered from germanium under 1–20 keV Ar⁺ ion bombardment (normal incidence) has been studied experimentally and using computer simulations. A collector technique combined with Rutherford backscattering to analyze the distribution of collected material was used. In addition, the surface topography was under control. It was found that the experimental angular distribution of sputtered atoms (E ₀=3–10 keV) could be approximated by the function cos ⁿ θ with n≈ 1.65. Such a high value of n is connected with the surface scattering of ejected atoms and a noticeable contribution of backscattered ions to the formation of the sputter flux (the mass effect). The target surface was found to be practically flat even at ion fluencies ～10¹⁸ ions/cm². The results obtained are compared with data from the literature, including our recent data on Si sputtering.     

Low energy (E0 < 10 keV) atom and ion scattering of neon from a Cu(100) surface; Ionization and neutralization

The ion fractions η⁺ of low energy (5–10 keV) neon particles scattered from a Cu(100) surface are measured with a time of flight spectrometer. These fractions are obtained for neutral as well as charged projectiles and for different crystal directions. The scattering angle θ was 30°. For a primary energy E₀ of 5 keV neutral projectiles have a value for η⁺ which is 30 times lower than for charged projectiles; these values are 0.15 and 4.5% respectively. For E₀ = 10 keV the values of η⁺ are about the same (~22%). Energy differences up to 22 eV, depending on E₀, are observed between the single scattering peaks in the ion spectra of charged and neutral projectiles but also between the single scattering peak in the spectra of all scattered particles and of ions, with ions as projectiles. A qualitative discussion of these data is given, involving charge transfer processes of noble gas particle and target atom. The data suggest that these neutralization processes can be described more adequately with interatomic neutralization processes along the trajectory than with Auger neutralization by conduction electrons.     

The15N(p,α 0)12C reaction at stellar energies

The¹⁵N(ρ, α₀)¹²C reaction has been investigated in the energy range ofE _p (lab)=78-810keV. The measurement of the excitation functions and α-particle angular distributions involved solid targets as well as a quasi-point supersonic jet gas target. The determination of absolute cross sections has been carried out with the gas target. The observed energy dependence of the total cross sections can be described in terms of two-level Breit-Wigner shapes including the resonances atE _p (J ^π)=335(1^?) and 1,028(1^?)keV. The data lead to a zero-energy intercept of the astrophysicalS(E) factor ofS(0)= 65±4MeV-b. The angular distributions are asymmetric around 90° and require an additional amplitude in the reaction mechanism, which interferes predominantly with the 335 keV resonance. The origin of this background amplitude is discussed.     

Computer simulation of atomic mixing during ion bombardment

The atomic mixing in the target under ion bombardment is assumed to result from cascades of atomic collision events. Computer simulations have been applied to collision cascades to estimate the depth resolution of surface analysis with an ion probe. The Monte Carlo method based on a single scattering model has been used mainly in the calculation under the assumptions of random collision process, no diffusion and no target saturation processes. High-energy collisions are characterized by a Lenz-Jensen or a Thomas-Fermi potential, while a Born-Mayer potential is used in the low energy region. The simulations have been performed for the bombardment of Ar ions withE ₀=5 keV and 10 keV at angles of incidence θ=0° and 60° on Si targets. The depth resolutions [the definition of which is explained by (15) in the text] are about 140Å for the Lenz-Jensen cross section and about 80Å for the Thomas-Fermi one for θ=0° atE ₀=5 keV, and decrease by 20–40% at θ=60° and increase by 70–90% forE ₀=10 keV.     

Energy and charge distributions of fast hydrogen ions and atoms reflected from Cu in the case of grazing incidence

The energy and charge distributions of protons and hydrogen atoms reflected from the Cu surface in the case of grazing incidence angles are measured at energies of incident particles (H⁺ and H⁰) of 200 and 250 keV. The charged fractions of reflected particles are analyzed. A weak dependence of the neutral fraction of reflected particles on the scattering angle is discovered for incidence angles of 1°–2° and an energy of scattered particles of 60 keV or less. It is shown that the neutral fraction of reflected particles with an energy of 60–80 keV or more is independent of the scattering angle and is determined by the ratio of the cross sections for the electron capture and loss by ions in the material.     

Isobaric Analogue State of the 0.211 MeV Level of Mn56 in Fe56

Gamma-ray spectrum from the reaction Mn⁵⁵(p, γ) Fe⁵⁶ at the isobaric analogue resonance at E_p = 1537 ± 4keV has been measured with a 15 cm³ Ge(Li) detector. Double and triple angular correlations at this resonance state have been measured. Proton elastic scattering was studied also at this resonance at the angles 135° and 150°. Analysis of these data yields a spin and parity assignment 2+, proton radiative width 2 ± 0.2 keV and total width 9 keV to this resonance state which is the isobaric analogue of the third excited state of Mn⁵⁶ at excitation energy 0.211 MeV.     

The 18O(p, α)15N reaction at stellar energies

The ¹⁸O(p, α)¹⁵N reaction has been investigated in the energy range E_p = 72–935 keV. The three known resonances above E_p = 620 keV have been confirmed and four new resonances have been found below E_p = 340 keV. All observed resonances correspond to known compound states in ¹⁹F. Information on resonance energies, total widths and ωγ values is reported. The low-energy resonances are superimposed on a non-resonant reaction yield, which varies smoothly with beam energy and which exhibits pronounced α-particle angular distributions asymmetric around 90°. The explanation of these data requires either interferring amplitudes of broad resonances with differing parities or a direct (p, α) reaction mechanism. The investigated energy range corresponds to the important temperature range of T = (0.05–2.5) × 10⁹ K. The energy averaged astrophysical reaction rates are compared with predictions.     

Alpha-heavy-ion angular correlations from 28Si + 12C

Alpha particles have been measured in coincidence with heavy recoil nuclei from the ²⁸Si + ¹²C reaction. At E_lab = 87 MeV angular correlations for alphas between 15° and 55° and heavy ions at angles ?9°, ?12° and ?15° have been taken. An excitation function of coincidence events with θ_α = 30° and θ_HI = ?12° has been measured for 84 MeV < E_lab < 91.5 MeV. The results are well described by a statistical-model calculation for compound nucleus decay. No evidence is found for additional processes.     

Statistical analysis of the (d,p) and (d,d) reactions on 40Ca

Excitation functions of the ⁴⁰Ca(d, p)⁴¹Ca and ⁴⁰Ca(d, d)⁴⁰Ca reactions have been measured at 45°, 90°, 135° and 170° from E_d = 4.50 to 5.43 MeV in 10 keV steps. Angular distributions of these reactions have been taken at E_d = 4.70, 5.00 and 5.30 MeV from 25° to 170° in 5° steps. Transitions were observed to the excited states for the range 0.0 ≦ E_x ≦ 3.74 MeV in ⁴¹Ca. Rapid fluctuations in the excitation functions and strong variations of the angular distributions with the incident energy were observed, suggesting that the contribution from compound nucleus processes is very large. Various quantities extracted from the experimental data were compared to the predictions of the statistical theories combined with the DWBA theory for the calculation of the direct reaction amplitudes. The results of the present analysis are consistent with the predictions of the standard statistical theories based on the neglect of the channel-channel correlation.     

Momenta of the particles emitted by a target heavily irradiated with low-energy ions

The total momenta of the particles emitted by a target intensely sputtered with heavy noble-gas ions with an energy of E ₀≈0.5 keV are measured. For liquid Ga targets and Ga targets at the premelting temperature, the measured momenta are close to the expected values for the sputtered metal atoms and reflected ions, whereas for Cu and Zr targets, the measured momenta are significantly higher. It is assumed that these excessive momenta are related to the sputtering of the noble gas atoms implanted into the target. The average energy of these atoms is estimated as 〈E〉≈20 eV. When gallium is irradiated, the implanted atoms diffuse predominantly to the surface and then are desorbed.     

Study of optical band gap and carbon cluster sizes formed in 100 MeV Si8+ and 145 MeV Ne6+ ions irradiated polypropylene polymer

A wide variety of material modifications in polymers have been studied by using ion irradiation techniques. Extensive research has focused on to Swift Heavy Ions (MeV’s energy), probably because of good controllability and the large penetration length in polymers. High energy ion irradiation tends to damage polymers significantly by electronic excitation and ionization. It may result into the creation of latent tracks and can also cause formation of radicals such as ablation, sputtering, chain scission and intermolecular cross-linking, creation of triple bonds and unsaturated bonds and loss volatile fragments. Polypropylene polymer films of thickness 50 μm were irradiated to the fluences of 1 × 10¹⁰, 3 × 10¹⁰, 1 × 10¹¹, 3 × 10¹¹, 6 × 10¹¹ and 1 × 10¹² ions/cm² with Si⁸⁺ ions of 100 MeV energy from Pelletron accelerator at Inter University Accelerator Centre (IUAC), New Delhi and Ne⁶⁺ ions of 145 MeV to the fluences of 10⁸, 10¹⁰, 10¹¹, 10¹² and 10¹³ ions/cm³ from Variable Energy Cyclotron Centre, Kolkata. Optical modifications were characterized by UV towards the red end of the spectrum with the increase of the fluence. Value of optical band gap E _g shows a decreasing trend with ion fluence irradiated with both kinds of ions. Cluster size N, the number of carbon atoms per conjugation length increases with increasing ion dose. Cluster size also increases with the increase of electronic stopping power.      

The peculiarities of the low-energy ion scattering by polycrystal targets

In the present work, experimental and computer simulation studies of low-energy (E₀ = 80-500 eV) Cs⁺ ions scattering on Ta, W, Re target surfaces and K⁺ ions scattering on Ti, V, Cr target surfaces have been performed for more accurate definition of mechanism of scattering, with a purpose of evaluation of an opportunity of use of slow ions scattering as a tool of surface layers analysis. The choice of the targets was based on the fact that the ratios of atomic masses of target atoms and ions μ = m₂/m₁ were almost the same for all cases considered and greater than 1 (direct mass ratio) however, the difference of binding energies of target atoms in the cases of Cs⁺ and K⁺ scattering was almost twice as much. It has been noticed that the dependencies of the relative energy retained by scattering ions at the maximum of energy distribution versus the initial energy E_m/E₀ (E₀) have a similar shape in all cases. The relative energy retained by scattering ions increases while the initial energy of incidence ions decreases. The curves are placed above each other relative to the binding energies of target atoms, to show what this says about the influence of binding energy on a process of scattering of low-energy ions. The correlation between value of energy change maintained by an ion for different values of E₀ in the case of scattering by targets with different masses of atoms and its binding energies is experimentally established. The contrary behavior of the E_m/E₀ (E₀) dependencies concerning the target atom binding energy quantity E_b for cases with direct (μ > 1) and inverse (μ < 1) mass ratio of colliding particles is established. The comparison of experimental energy distributions with calculated histograms shows that the binary collision approximation cannot elucidate the abnormally great shift in the maxima of relative energy distributions towards greater energy retained by scattering ions.     

A search for resonant two-step α-exchange in 6Li + 12C scattering

Excitation functions for ¹²C(⁶Li, ⁶Li)¹²C (gs, 4.43 MeV) have been measured at 10 angles (40° ? θ_cm ? 160°) over the energy range 20 MeV < E_lab < 36 MeV. A single anomaly of width Γ ≈ 800 keV is observed at E_lab = 22.8 MeV. The results casts doubts on the resonant two-step α-exchange mechanism suggested to occur in this system.