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1.
Rutherford backscattering of 1.75 and 2 MeV 4He+ ions has been utilized to study the high temperature gettering of Fe, Co, Ni, Cu and Au from silicon by ion-damaged surface layers. In a typical experiment a metal film was evaporated onto one side of a silicon wafer (125 microm thick) which had received ion implantation damage (1016/cm2 Si+ ions at 100 keV) on the opposite side; the wafer was then annealed at 900°C, usually for 30 min. The results of such experiments show that the metals studied may be divided into two classes, those which are gettered slowly - Fe, Co, and Au, and those gettered rapidly - Cu and Ni. Fe, Co, and Au were found at levels of 1×1013?1×1014/cm2 in the damaged layer, whereas Cu and Ni appeared at levels of 6×1014 to 5 ×1016cm2. The gettered level of Au, one of the “slow” group, was increased ten-fold by an equal increase in the anneal time to 300 min. The gettered Cu and Au exhibited double peaks in the scattered ion spectra, corresponding to metal concentrated at the most heavily damaged region (end of range for Si implant) and also at the outer surface, with a separation of ~ 1300 Å. A simple model is proposed to explain the slow and fast gettering, based on published interstitial diffusivities and solubilities of the five elements studied.Rutherford scattering has proven to be well suited for the quantitative identification of low levels of impurities on Si surfaces and for impurities gettered at damaged layers close to the surface.  相似文献   

2.
分别在苏打石灰玻璃、Mo箔、无择优取向的Mo薄膜以及(110)择优取向的Mo薄膜四种不同衬底上,采用共蒸发工艺沉积约2 μm厚的Cu(In,Ga)Se2薄膜,用X射线衍射仪测量薄膜的织构,研究衬底对Cu(In,Ga)Se2薄膜织构的影响.在以上四种衬底上沉积的Cu(In,Ga)Se2薄膜的(112)衍射峰强度依次逐渐减弱,(220/204)衍射峰从无到有且强度逐渐增强.在苏打石灰玻璃和Mo箔衬底上的Cu(In,Ga)Se2关键词: 择优取向 Cu(In 2薄膜')" href="#">Ga)Se2薄膜 太阳电池  相似文献   

3.
The atomic and electronic structures of the Nb/Al2O3(0001) and Ni/ZrO2(001) interfaces are calculated using density-functional theory. The formation energy of oxygen vacancies is estimated in bulk materials and in surface layers and interfaces for different uppermost atomic layers of oxide surfaces. The work of separation of metal films from oxide surfaces is determined. The effect of oxygen vacancies on the bonding of transition metals to atoms of a substrate determining adhesion at the metal-oxide interfaces is discussed. It is shown that the Nb(Ni)-O interaction at the interfaces weakens in the presence of surface oxygen vacancies.  相似文献   

4.
The mechanisms for defect formation stimulated by the adsorption of water molecules in the surface of YBa2Cu3O7 ceramic are studied, together with the types of defects and their distributions. It is found that a water layer physically bound to the surface reduces the rates of annihilation and capture of positrons, changes the amount of barium and copper on the surface by a factor of two, and inhibits diffusive jumps of nickel atoms. A layer of adsorbed water excites subthreshold formation of 1021 cm−3 interstitial Ba and Cu1 atoms and transitions of oxygen from O1 to O5, and vice versa in the volume of crystallites, and the migration of defects and accumulation of Ba atoms in the surface layer, which block diffusive jumps of Ni within the volume of the crystals. These effects are related to the excitation of collective, low-frequency weakly damped motion of heavy holes in the crystal volume when defects are formed on the surface by physically adsorbed H2O molecules, which is accompanied by Coulomb repulsion of cations from intermediate layers into interstitials and the migration of defects in the field of the collective excitations. Zh. éksp. Teor. Fiz. 116, 586–603 (August 1999)  相似文献   

5.
The effect of laser irradiation using three different wavelengths (IR, visible and UV) generated from Nd:YAG laser on the local glass structure as well as on the valence state of the copper ions in copper phosphate glass containing CuO with the nominal composition 0.30(CuO)-(0.70)(P2O5), has been investigated by X-ray photoelectron spectroscopy (XPS). The presence of asymmetry and satellite peaks in the Cu 2p spectrum for the unirradiated sample is an indication of the presence of two different valence states, Cu2+ and Cu+. Hence, the Cu 2p3/2 spectrum was fitted to two Gaussian-Lorentzian peaks and the corresponding ratio, Cu2+/Cutotal, determined from these relative areas clearly shows that copper ions exist predominately (>86%) in the Cu2+ state for the unirradiated glass sample under investigation. For the irradiated samples the symmetry and the absence of satellite peaks in the Cu 2p spectra indicate the existence of the copper ions mostly in Cu+ state. The O 1s spectra show slight asymmetry for the irradiated as well as unirradiated glass samples which result from two contributions, one from the presence of oxygen atoms in the P-O-P environment (bridging oxygen BO) and the other from oxygen in an P-O-Cu and PO environment (non-bridging oxygen NBO). The ratio of NBO to total oxygen was found to increase with laser power.  相似文献   

6.
The influence of the laser radiation power density on the changes in the composition and mechanical properties of surface layers of Cu50Ni50 foils has been investigated using X-ray photoelectron spectroscopy, scanning probe microscopy, X-ray diffraction, and microhardness measurements. It has been found that, after laser irradiation, the redistribution of elements occurs in the surface layer with a thickness of ~30 nm on the irradiated side of the foil. It has been revealed that there are microdistortions in the crystal lattice of the alloy, microdeformations of grains, and variations in the microhardness of the irradiated surface. The mechanisms explaining the observed changes in the foils after laser irradiation have been proposed.  相似文献   

7.
Irradiation of fused quartz (SiO2) and sapphire (Al2O3) by Ne+ and F+ ions with medium energies and their subsequent annealing enables us to control the intensity and frequency of surface plasmon resonance in Au nanoparticles (NPs) synthesized in oxide matrices. The control process can be implemented because NPs dissolve during irradiation and undergo partial reconstruction at annealing. The degree of reconstruction depends on the matrix material and the type and dose of ions. It has been found that the difference in the results obtained by means of irradiation with ions with similar masses is substantially affected by the chemical nature of the ions. The composition, morphology, and structure of the unirradiated and irradiated layers are investigated by transmission electron microscopy, X-ray photoelectron spectroscopy, and spectroscopic ellipsometry.  相似文献   

8.
The formation of copper/gold solid solutions due to ion beam mixing was studied by Rutherford backscattering, high-voltage electron microscopy and transmission high-energy electron diffraction. Irradiation of multilayered Cu/Au thin films were performed with Xe+ ions or Ar+ ions at room temperature to doses ranging from 5×1015 to 2.5×1016 ions/cm2 and energies from 100 to 300 keV. The ion beam mixing leads to uniformly mixed metal layers. The grain size of mixed layers is pronounced increase. It was found that Cu/Au solid solutions are formed with different composition in dependence on itinial composition and implantation dose. Cu-rich and Au-rich solid solutions are induced by ion beam mixing at an initial composition Cu x Au100–x withx70. In addition to these solid solutions, a solid solution of middle composition Cu60...40Au40...60 is formed for an initial composition withx<70. The kinetics of formation of solid solution is discussed as a function of the initial composition and implantation dose. Post-annealing experiments of mixed Cu50Au50 multilayers lead to lattice transformations and provide a superlattice structure CuAuI of the L10-type. With this process of ordering is associated the formation of dislocation loops.  相似文献   

9.
The morphology and chemical composition of metal (Ni), carbon, and composite (Ni-C) nanostructures grown on oxidized and unoxidized (0001) surfaces of a layered GaSe crystal by electron beam vacuum evaporation of the material from a liquid ion source in an electric field have been investigated using atomic force microscopy and X-ray photoelectron spectroscopy. It has been demonstrated that this technology makes it possible to grow nanostructures with different morphologies depending on the growth mode and substrate surface state. Dense homogeneous arrays of nickel nanoparticles (Ni@C) (with geometrical sizes of ~1–15 nm and a lateral density of higher than 1010 cm?2) encapsulated into carbon shells, as well as carbon layers (with a thickness of the order of several nanometers), are grown on the unoxidized van der Waals GaSe(0001) surface, whereas Ni-C composite nanostructures are grown on the oxidized surface. The formation of oxide nanostructures on the van der Waals surface and their chemical composition have been examined. Vertical hybrid Au/Ni/(Ni-C)/n-Ga2O3(Ni@C)/p-GaSe structures grown on the GaSe(0001) surface contain Ni@C nanoparticles embedded in the wide-band-gap n-Ga2O3 oxide. The current-voltage characteristics of these structures at temperatures close to T = 300 K exhibit specific features of the Coulomb blockade effect.  相似文献   

10.
Structures based on the SiO2/n-Si and SiO2/p-Si systems, with nanopores in silicon dioxide layers filled with Cu and Ni nanoparticles, have been prepared and investigated using the fast heavy ion technology, which includes irradiation with 197Au26+ ions, chemical etching of ion tracks, and subpotential electrochemical deposition. The selectivity of filling nanopores with metals and cluster character of their formation in tracks is shown.  相似文献   

11.
The composition and structure of Si layers implanted into titanium nickelide single crystals with different orientations relative to the ion beam propagation direction have been studied using Auger electron spectroscopy and transmission electron microscopy. The role of the “soft” [111]B2 and “hard” [001]B2 NiTi orientations in the formation of the structure of ion-modified surface layer, as well as the defect structure of the surface layers of the single crystals, has been revealed. Orientation effects of selective sputtering and channeling of ions, which control the composition and thickness of the oxide and amorphous layers being formed, ion and impurity penetration depth, as well as the concentration profile of the Ni distribution over the surface, have been detected.  相似文献   

12.
We investigate the ripple pattern formation on Si surfaces at room temperature during normal incidence ion beam erosion under simultaneous deposition of different metallic co-deposited surfactant atoms. The co-deposition of small amounts of metallic atoms, in particular Fe and Mo, is known to have a tremendous impact on the evolution of nanoscale surface patterns on Si. In previous work on ion erosion of Si during co-deposition of Fe atoms, we proposed that chemical interactions between Fe and Si atoms of the steady-state mixed Fe x Si surface layer formed during ion beam erosion is a dominant driving force for self-organized pattern formation. In particular, we provided experimental evidence for the formation of amorphous iron disilicide. To confirm and generalize such chemical effects on the pattern formation, in particular the tendency for phase separation, we have now irradiated Si surfaces with normal incidence 5 keV Xe ions under simultaneous gracing incidence co-deposition of Fe, Ni, Cu, Mo, W, Pt, and Au surfactant atoms. The selected metals in the two groups (Fe, Ni, Cu) and (W, Pt, Au) are very similar regarding their collision cascade behavior, but strongly differ regarding their tendency to silicide formation. We find pronounced ripple pattern formation only for those co deposited metals (Fe, Mo, Ni, W, and Pt), which are prone to the formation of mono and disilicides. In contrast, for Cu and Au co-deposition the surface remains very flat, even after irradiation at high ion fluence. Because of the very different behavior of Cu compared to Fe, Ni and Au compared to W, Pt, phase separation toward amorphous metal silicide phases is seen as the relevant process for the pattern formation on Si in the case of Fe, Mo, Ni, W, and Pt co-deposition.  相似文献   

13.
在柔性钼箔衬底上采用连续离子层吸附反应法(successive ionic layer absorption and reaction)制备ZnS/Cu2SnSx叠层结构的预制层薄膜,预制层薄膜在蒸发硫气氛、550 C温度条件下进行退火得到Cu2ZnSnS4吸收层.分别采用EDS,XRD,Raman,SEM表征吸收层薄膜的成分、物相和表面形貌.结果表明,退火后薄膜结晶质量良好,表面形貌致密.用在普通钠钙玻璃上采用相同工艺制备的CZTS薄膜表征薄膜的光学和电学性能,表明退火后薄膜带隙宽度为1.49 eV,在可见光区光吸收系数大于104cm 1,载流子浓度与电阻率均满足薄膜太阳电池器件对吸收层的要求.用上述柔性衬底上的吸收层制备Mo foil/CZTS/CdS/i-ZnO/ZnO:Al/Ag结构的薄膜太阳电池得到2.42%的效率,是目前报道柔性CZTS太阳电池最高效率.  相似文献   

14.
The initial stages of oxidation of the (100) surface of a single crystal alloy specimen of approximate atomic composition Ni 59, Fe 41 (at%) have been studied by Auger spectroscopy and electron diffraction techniques. The clean alloy surface shows only a slight iron enrichment over the temperature range of the oxidation studies (373–873 K). Oxidation studies were performed over the O2 pressure range 5 × 10?9 to 1 × 10?6 Torr. Within these experimental conditions the rate of oxygen uptake was found to be linear in pressure and essentially independent of temperature. LEED studies showed that a chemisorbed c(2 × 2) structure preceded the formation of surface oxides. The interaction of oxygen with the surface induced a marked segregation of iron and this was particularly pronounced at elevated temperatures. Chemical shifts were observed in the low energy Ni and Fe Auger spectra during oxidation; these were similar to those previously observed in separate studies of the oxidation of pure Ni and of pure Fe. At the higher temperatures the initial oxide layer grew epitaxially apparently as a (111) cubic oxide on the (100) substrate. The Ni to Fe concentration ratio in oxides several layers thick was found to depend on the temperature of the reaction; at higher temperatures the oxide were more Fe-rich. The Fe to Ni ratio in oxides produced at lower temperatures could be increased by annealing. At large O2 exposures (about 5000 L) a transition was observed in the structure of the oxide layer.  相似文献   

15.
The surface composition of Ni50Fe50(100) alloy was studied and the segregation and adsorption of sulphur were investigated by AES, LEED and radiotracer (35S) techniques. Ion etching produces a surface composition identical to the matrix composition (Ni:Fe=1:1). In the temperature range 300–600°C iron segregates on the surface and nitrogen was detected. Heating to higher temperatures (>600°C) also causes the segregation of iron as well as the segregation of sulphur. The durface reaches a stable composition that does not depend on further changes of the temperature in the range 25–800°C. It consists of an almost complete monolayer of iron segregated on the alloy. The segregation of sulphur leads to the formation of a c(2×2) structure. A sulphur coverage of 45 ng cm-2, consistent with the c(2×2) structure, was measured by the radiotracer method after chemisorption in gaseous H2S/H2 mixtures at 550° and 200 Torr. This sulphur monolayer is stable in a range of pH2S/pH2=7.4 × 10-5-6×10-4. Above this pressure, a preferential sulphidation of iron is observed. The effects of sulphur on the anodic dissolution and passivation of the alloy in acid solution were studied. Adsorbed sulphur promotes the dissolution and delays the passivation. When the alloy is doped with sulphur, bulk sulphur accumulates on the surface during the dissolution of Ni and Fe. This anodic segregation leads to the formation of an adsorbed layer of sulphur, followed by the growth of a sulphide which blocks the formation of the protective oxide film.  相似文献   

16.
A kinetic study of D2 formation from HCOOD decomposition on Ni(110) (2 × 1)C was performed using the flash desorption technique. The surface structure and surface composition were monitored by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). Flash curves were obtained using initial coverage and heating rate variations. D2 formation exhibited a single second-order rate-determining step. Three different techniques were employed in obtaining the activation energy, two of which did not require the assumption of reaction order. Using an average value of 12.6 kcal/mole for the activation energy the pre-exponential factor was calculated to be 2.7 × 10?4 cm2 molecules?1 sec?1. Good agreement was achieved with the theoretically generated second-order flash curves only up to the peak temperature. The discrepancy on the high temperature side was explained using the model proposed by Clavenna and Schmidt utilizing a coverage dependent pre-exponential factor.  相似文献   

17.
A high wear-resistant gradient coating made of Ni/Co-based alloys on the surface of a Cu alloy substrate was synthesized using a YAG laser induced in situ reaction method. The coating consists of three layers: the first is a Ni-based alloy layer, the second and third are Co-based alloy layers. The microhardness increases gradually from 98 HV in the Cu alloy substrate to the highest level of 876 HV in the third layer. The main phase of the Co-based alloy layer is CoCr2(Ni,O)4, coexisting with the Fe13Mo2B5, Cr(Co(Mo, and FeCr0.29Ni0.16C0.06 phases. Wear tests indicate that the gradient coating has good bond strength and wear properties with a wear coefficient of 0.31 (0.50 for the Cu alloy substrate). Also, the wear loss of the coating is only 0.01 g after it has been abraded for 60 min, which is only one fifth of that of the Cu alloy of the crystallizer. Wear tests of the gradient coating reveal good adhesive friction and wear properties when sliding against steel under dry conditions. This novel technique may have good application to make an advanced coating on the surface of the Cu alloy crystallizer in a continuous casting process.  相似文献   

18.
黄明亮  陈雷达  周少明  赵宁 《物理学报》2012,61(19):198104-198104
本文研究了150 ℃, 1.0× 104 A/cm2条件下电迁移对Ni/Sn3.0Ag0.5Cu/Au/Pd/Ni-P倒装焊点界面反应的影响. 回流后在solder/Ni和solder/Ni-P的界面上均形成(Cu,Ni)6Sn5类型金属间化合物. 时效过程中两端界面化合物都随时间延长而增厚, 且化合物类型都由(Cu,Ni)6Sn5转变为(Ni,Cu)3Sn4. 电迁移过程中电子的流动方向对Ni-P层的消耗起着决定性作用. 当电子从基板端流向芯片端时, 电迁移促进了Ni-P层的消耗, 600 h后阴极端Ni-P层全部转变为Ni2SnP层. 阴极界面处由于Ni2SnP层的存在, 使界面Cu-Sn-Ni三元金属间化合物发生电迁移脱落溶解, 而且由于Ni2SnP层与Cu焊盘的结合力较差, 在Ni2SnP/Cu界面处会形成裂纹. 当电子从芯片端流向基板端时, 阳极端Ni-P层并没有发生明显的消耗. 电流拥挤效应导致了阴极芯片端Ni层和Cu焊盘均发生了局部快速溶解, 溶解到钎料中的Cu和Ni原子沿电子运动的方向往阳极运动并在钎料中形成了大量的化合物颗粒. 电迁移过程中(Au,Pd,Ni)Sn4的聚集具有方向性, 即(Au,Pd,Ni)Sn4因电流作用而在阳极界面处聚集.  相似文献   

19.
The adsorption of O2 and CO on the (110) face of a Cu/Ni alloy (55 at% Cu) has been studied by means of low energy electron diffraction (LEED), Auger electron spectroscopy, work function measurements, and flash desorption. A comparison with the behavior of Cu(110) and Ni(110) is made. It is shown that the height of an Auger peak is proportional to the surface concentration of the corresponding species and that the surface composition of the alloy is identical with the composition of the bulk. Adsorption of oxygen leads to the formation of an ordered 2 × 1 structure, as is the case for Cu(110) and Ni(110). Further exposure causes disordered adsorption in contrast to the pure components where c6 × 2 respectively 3 × 1 structures are formed. Oxygen increases the work function of Cu and Cu/Ni by about 0.25 eV whereas for Ni the increase is > 1 eV. CO is not irreversibly adsorbed on Cu at 25°C, but forms a stable 1 × 1 structure on Ni(110). With the alloy two ordered phases (2 × 1 and 2 × 2) are observed. The flash desorption spectrum shows three maxima which are similar to the binding states of CO on Ni(110) and Ni(100). The results are discussed in view of the electronic structure of Cu/Ni alloys and the parameters influencing the configuration of adsorbed particles.  相似文献   

20.
Co-silicides were prepared with several techniques, such as annealing of evaporated Co-layers on a Si-substrate (silicide surface layers) and annealing of Co-implanted Si (buried silicide layers). By adding some57Co to the stable59Co, the formation of the various Co-silicides could clearly be followed as a function of annealing temperature by means of Mössbauer spectroscopy. In the case of surface silicide layers, Co2Si, CoSi and CoSi2 were formed subsequently. In the case of buried layers however, CoSi2 was the only crystalline phase that could be observed. In both cases, the CoSi2 spectra showed an anomalous side resonance. Moreover, it was found that when57Fe was implanted (instead of57Co), a drastic increase in the intensity of this side resonance could be detected by CEMS.  相似文献   

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