Energy relaxation in aϕ 4 with long range interactions

We investigate the influence of long range interactions on the relaxation behaviour of a lattice model with an on-site potential of ⁴-type and infinite range harmonic interactions. For finite number of particlesN, it is shown that the autocorrelation functions <E _n(t)E _n > of the fluctuations of the one-particle energiesE _n(t) decays exponentially. The corresponding relaxation time is proportional toN and is given by (T, N) =N₀(T). The temperature dependent time scale ₀ can explicitly be related to the dynamics of a one-particle correlator of the noninteracting system. The results are derived using Mori-Zwanzig projection formalism. The corresponding memory kernel is calculated within a mode coupling approximation and by a perturbative approach. Both results agree in leading order in 1/N. It is speculated that any interaction of range generates a timescale .     

Enhancement of conductance fluctuations in two-dimensional mesoscopic electron systems with valley structures

Conductance fluctuations are studied in twodimensional mesoscopic electron system with a two-hold valley degeneracy (n _v =2), which corresponds to the inversion layer of Si-MOSFET formed in (1,0,0) plane. It is shown that the intervalley scattering modifies conductance fluctuations depending on the ratio, Min { _c , _T }/ _v , where _v = ( – 2)/2 and _c , _T , and are, respectively, system traversal time, thermal diffusion time, intervalley scattering time and total life time of electrons. Conductance fluctuations are no longer universal and vary from G _univ 0.862·e ²/h to {ie223-5} at low temperatures even for isotropic systems. The conductance fluctuations increase with decreasing system size, increasing electron density and increasing intervalley scattering time. The effect of intervalley scattering is essentially the same as that of intersubband scattering as previously reported. At finite temperatures where _{T c} , the intervalley scattering modifies the fluctuations through the change in the energy correlation range to results in the reduction of the conductance fluctuations. In Si-MOSFET formed in (1, 1, 1) plane, wheren _v =6, more enhanced fluctuations are expected. Experimental studies are desired on theoretically predicted points.     

Microscopic theory of gas-surface interaction

A kinetic theory for inelastic scattering, trapping and desorption of gas molecules by surfaces is described. The theory is valid if the time scale _l = 1/r introduced by the relaxation ratesr in the kinetic equations (which is of the order of the life time of vibrational states of adsorbates) is sufficiently large compared to the vibrational period ₀. For sufficiently large activation energies of the adsorbates another time constant _res, the residence time of adsorbed particles, can be determined from the theory. One thus may distinguish four different partly overlapping regimes defined by the time scalest _{I l} , ₀t_II, _l t_III and _rest_IV. Regime I is governed by the Schrödinger equation regime II by the kinetic equations. In the region where both regimes overlap the kinetic coefficients can be expressed in terms of microscopic quantities which have been calculated previously. The relevant quantities in the other regimes are introduced and discussed from a unified point of view thus providing a link between the regimes I and IV which have been treated in detail before.     

A frequency response model in multiquantum well lasers with unequilibrium carrier transport

A carrier transport model to explain the high-frequency response in high-speed MQW lasers is described. The ambipolar approximation, which is unsuitable for dealing with the high-speed carrier dynamics in MQW structures, was not adopted for small-signal analysis. The carrier transport effect can be characterized by four time constants: the electron transport time, _bmn; the hole transport time, _bmp; the electron escape time, _wbn; and the hole escape time, _wbp. The frequency response was interpreted as the sum of the constant response term due to the fast electron current and the roll-off term due to the slow hole transport time. The ratio of the electron contribution to the total response was proportional to the ratio of electron contribution to the total differential gain, , and reciprocally proportional to _n0 = 1 + _bmn/_wbn. The value of was calculated to be about 0.5 for typical MQW lasers. The roll-off frequency is mainly determined by . The ratio _p0 = 1 + _bmp/_wbp affects the resonant frequency and the damping rate in the high-bias condition.     

Recombination of nonequilibrium current carriers in n-InAs1−x−ySbxPy

The stationary photoconductivity, the photomagnetic effect, and the relaxation kinetics of photoconductivity in n-InAs_1–x–ySb_xP_y crystals (x=0.06, y=0.11) with n₀ = 8·10¹⁵ and 3·10¹⁶ cm^–3 were measured and the lifetimes of nonequilibrium current carriers in the temperature interval T=78–295 K were determined. The possible mechanisms of recombination, which limit the lifetimes (radiative _R, Auger recombination _A, and recombination through centers with E_f=0.13 eV), which, as is demonstrated, are determined by interband recombination processes with _RA = _RA/(_R + _A), are calculated theoretically. The contribution of the 0.13 eV recombination centers can be significant when n₀10¹⁴ cm^–3.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 52–54, April, 1991.     

The paramagnetic state (μ+e−) in silicon and tellurium at high temperature

The paramagnetic state (⁺e^–) in Si and Te was observed in a longitudinal magnetic field. The mean lifetimes of these states were obtained: _Si = 1.45(3) s, _Te = 12.5(8) s at 290 K, _Te = 12(2) s at 250 K.     

Kinetic equation in the kinetic region of the dilute and nonuniform electron plasma

Mori's scaling method is used to derive the kinetic equation for a dilute, nonuniform electron plasma in the kinetic region where the space-time cutoff (b, t _c) satisfies _Dbl _f , _D t _{c f} , with _D the Debye length, _D ^–1= _p the plasma frequency, andl _f and _f the mean free path and time, respectively. The kinetic equation takes account of the nonuniformity of the order ofl _f and _D for the single-and the two-particle distribution function, respectively. Thus the Vlasov term associated with the two-particle distribution function is retained. This kinetic equation is deduced from the kinetic equation in the coherent region obtained by Morita, Mori, and Tokuyama, where the space-time cutoff of the coherent region satisfies _Dbr ₀, _Dt _{c 0}, withr ₀ the Landau length and ₀ the corresponding time scale.     

Exact gravitational field of the infinitely long rotating hollow cylinder

The vacuum line element inside an infinitely long rotating hollow cylinder is the usual flat space line element. It is fitted in a most general way to the general cylindrical vacuum field outside at the singular hypersurfaceR ₀=const, representing the infinitely thin hollow cylinder. With the use of the jump conditions atR ₀=const the surface densities , of which the energy-momentum-stress tensor of the shell consists, are calculated. The physical properties of the cylinder, as derived from the eigenvalues and -vectors of , and the generated gravitational field are discussed in full detail.     

On the theory of amplification of meso-ultrasound in anisotropic monopolar semiconductors

The electronic absorption coefficient (_e) of meso-ultrasound (_p ^–1 _en, _t, _ee; ql 1, where _p, _en, _t are the times of pulse relaxation, energy, and current carrier traps; _ee ^–1 is the frequency of intraelectron collisions; , q are the frequency and wave vector of sound; l is the carrier mean free path) in the presence of a permanent external field E₀ e ₀ ^–1 q₀T is calculated for anisotropic single-valley semiconductors with piezoelectrical and potential-deformation acoustoelectronic interaction. Considered arbitrary are: 1) the anisotropy of the tensors * and _p (and other crystal parameters); 2) the degree of Fermi degeneration of the carriers; 3) the dependence of _p on the carrier energy . The acoustoheat nonlinearity is neglected. The possibility of meso-ultrasound amplification by the transverse field (E₀ - q) is predicted. By changing the orientation of the vector q relative to the crystal axes, the transverse threshold field (E ^thr ) can be controlled smoothly and within broad limits, This permits the production of a mechanical sound-amplification regulator or a modulator of its intensity. The ratio between E ^thr and E ^thr yields a measure of the relative anisotropy of the mobility.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 87–92, February, 1977.     

Dispersion of the permittivity of high-resistance semiconductors

We consider the mechanism of macroscopic polarization of semiconducting plates owing to the interaction of free carriers with an impurity level, in which role the level of the residual impurity of compensated semiconductors may appear. This mechanism, in combination with the diffusion-drift mechanism of polarization, results in additional dispersion of the real () and imaginary () parts of the dielectric permittivity, this being particularly significant for semiconductors of thickness smaller than the screening length L_s of free carriers. The character of the behavior of and depends on the relation between the Maxwell relation time _M and the times of carrier capture: _c and ejection _e by an impurity center. For _cetm and (/L_s) _e/_c1 the dispersion of and is the same as for thick plates (/L_s1). For _{c m e} and (/L_s)_e/_c1 the () curve has a characteristic kink in the region 1/_e, indicating additional absorption associated with the ejection of carriers into the surface region.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 11–13, October, 1981.     

Langevin dynamic simulation of hysteresis in a field-swept Landau potential

Numerical simulations are done of Langevin dynamics for a uniform-orderparameter, field-swept Landau model,= –|a/2|m ²+|b/4|m ⁴–mh(t) , to study hysteresis effects. The field is swept at a constant rateh(t)=h(0)+ht. The stochastic jump values of the field {h_J from an initially prepared metastable minimumm(0) are recorded, on passage to a global minimum m(). The results are: (a) The mean jump¯h _J(h) increases (hysteresis loop widens) with h, confirming a previous theoretical criterion based on rate competition between field-sweep and inverse mean first-passage time (FPT); (b) The broad jump distribution(h _J,h) is related to intrinsically large FPT fluctuations ( ²–²)/ ² O(1), and can be quantitatively understood. Possible experimental tests of the ideas are indicated.     

The Statistics of the Trajectory of a Certain Billiard in a Flat Two-Torus

We consider a billiard in the punctured torus obtained by removing a small disk of radius >0 from the flat torus ², with trajectory starting from the center of the puncture. In this case the phase space is given by the range of the velocity only. Let (), and respectively R(), denote the first exit time (length of the trajectory), and respectively the number of collisions with the side cushions when ² is being identified with [0,1)². We prove that the probability measures on [0, ) associated with the random variables and R are weakly convergent as 0⁺ and explicitly compute the densities of the limits. Research partially supported by ANSTI grant C6189/2000.     

Carrier lifetime in single-crystal PbS films

The temperature dependence of the majority carrier lifetime was studied in single-crystal PbS films. In n- and p-type films in the range 300-200 ° K, increases exponentially with decreasing temperature, with an activation energy of e O. 17-0. 2 eV. This m dependence is assumed due to the trapping of minority carriers at deep levels. Below 160 ° K in the n-type films, does not depend on the temperature, while in the p-type films, decreases exponentially with an activation energy of 0. 11–0. 14 eV.Translated from Vysshikh Uchebnykh Zavedenii Fizika, No. 6, pp. 64–67, June, 1970.     

Macroscopic short-time electrodynamics for conductors

In the macroscopic electrodynamics (MED) of good conductors (metals) based on Ohm's law j=E, the momentum relaxation time =m/ne² of the electrons limits the application to electromagnetic (EM) processes with characteristic timest. An interesting physical difficulty occurs in MED since the EM field damping time _R=/ of metals is very small compared with the minimum macroscopic time scale, _R. Consequently, the damping and propagation of EM waves and pulses in good conductors cannot be correctly described within the frame of conventional MED. New hyperbolic EM wave equations with relaxation and memory are proposed, which no longer exhibit the _R deficiency. The latter is caused by Ohm's law, which breaks down for short-time processes, due to neglect of electron inertia. The advantages of the proposed and the disadvantages of the conventional EM wave equations for good conductors are discussed in applications.     

Weakly Bound States in Light Hypernuclei

From the viewpoint of critical stability, we discuss the three- and four-body structure of ⁶He, ⁷He, ⁴He, and ⁴H. With the + + N three-body model, ⁶He is found to have a three-layer structure of the matter distribution: core, a skin and neutron halo. Also the level structure of ⁷He with the three-body model of ⁵He + n + n is predicted. This stimulates a new study of neutron-rich and proton-rich hypernuclei. By performing a four-body calculation with both NNN and NNN channels and with both NN and NNN channels, we show that the N-N and -N couplings are very important in critical stability of few-body hypernuclear systems.     

τ-Lepton decay in an arbitrary plane-wave electromagnetic field

This paper discuses the , decay process in a field formed by the super-position of two fields: a crossed constant field and and electromagnetic plane-wave field. An expression is derived for the decay probability under the assumption of a nonzero -neutrino mass. The dependence of the decay probability on the lepton spin and on the external-field parameters is analyzed. The variation of the decay probability with the neutrino mass and lepton spin yields information which may be useful for ascertaining the neutrino mass.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 27–32, December, 1985.The authors are indebted to Professor V. R. Khalilov for a formulation of the problem and many valuable comments.     

R andRτ ratios at the five-loop level of perturbative QCD

We study perturbative QCD at the five-loop level. In particular we considerR = _tot(e ⁺ e ^– hadrons)/(e ⁺ e ^{– + –}) andR = ( v+hadrons)/( ev). We use our method to estimate the five-loop coefficients. As a result, we obtain _s (M _z ) = 0.1186(11) and _s (34 GeV) = 0.1396(16), which are accurate at the 1% level. We also findR = 3.8350(18), which is consistent withR and is accurate to 0.05%.     

Stochastic gravity

We investigate stochastic gravity as a potentially fruitful avenue for studying quantum effects in gravity. Following the approach of stochastic electrodynamics (sed), as a representation of the quantum gravity vacuum we construct a classical state of isotropic random gravitational radiation, expressed as a spin-2 field,h _µ (x), composed of plane waves of random phase on a flat spacetime manifold. Requiring Lorentz invariance leads to the result that the spectral composition function of the gravitational radiation,h(), must be proportional to 1/ ². The proportionality constant is determined by the Planck condition that the energy density consist of/2 per normal mode, and this condition sets the amplitude scale of the random gravitational radiation at the order of the Planck length, giving a spectral composition functionh() =16c ²L_p/². As an application of stochastic gravity, we investigate the Davies-Unruh effect. We calculate the two-point correlation function (R _iojo(O–/2)R _kolo(O,+/2)) of the measureable geodesic deviation tensor field,R _iojo, for two situations: (i) at a point detector uniformly accelerating through the random gravitational radiation, and (ii) at an inertial detector in a heat bath of the random radiation at a finite temperature. We find that the two correlation functions agree to first order ina/c provided that the temperature and acceleration satisfy the relationkT=a/2c.     

Properties of noninteger moments in a first passage time problem

We calculate the moments t ^q , whereq is not necessarily an integer, of the first passage time to trapping for a simple diffusion problem in one dimension. If a characteristic length of the system isL and t _q ~L (q) asL, then we show that there is a phase transition atq=q _c such that whenq<q _c ,(g)=0, and forq>q _c , (q) is a linear function ofq. These analytical results can be used to explain results for large moments for diffusion on a hierarchic structure. We also show how to calculate noninteger moments in terms of characteristic functions.     

Light absorption by free semiconductor carriers in the presence of a laser wave

Within the framework of the conditions ; » ^–1 ( ^–1 is the mean time of momentum relaxation), the coefficient of absorption () of a weak electromagnetic wave by the free carriers of a polar semiconductor is calculated in the presence of a strong wave (of frequency ), for arbitrary values of and . Photon absorption by band electrons is due to these latter interacting with optical phonons (of frequency _o). The problem is solved by using an analogous approach to the theory of the linear Kubo reaction. The results are valid in the absence of electron heating, when a strong wave only influences the scattering probability. The appearance of a photostimulated tail of absorption is predicted for < _o, including the jump () for ( – _o + ) ₀T as well as peaks in the function () at the points _s=s (s=1, 2, 3,...). The value (₁) is determined by the formula for the absorption coefficient for one strong wave.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 105–109, July, 1981.The authors are grateful to É. M. Épshtein and Sh. M. Kogan for useful discussions.