Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers

Internal loss is a key internal parameter for high power 1060-nm In Ga As/Al Ga As semiconductor laser.In this paper,we discuss the origin of internal loss of 1060-nm In Ga As/Ga As quantum well(QW) Al Ga As separate confinement heterostructure semiconductor laser,and the method to reduce internal loss.By light doping the n-cladding layer,and stepwise doping the p-cladding layer combined with the expanded waveguide layer,a broad area laser with internal loss of 1/cm is designed and fabricated.Ridge waveguide laser with an output power of 350 m W is obtained.The threshold current and slope efficiency near the threshold current are 20 m A and 0.8 W/A,respectively.     

Comparison of surface films formed on titanium by pulsed Nd:YAG laser irradiation at different powers and wavelengths in nitrogen atmosphere

The nitridation of titanium (Ti) caused by a Q-switched Nd:YAG laser under nitrogen gas atmosphere was investigated in situ using X-ray photoelectron spectroscopy (XPS). A laser having a wavelength of 1064 nm and 532 nm (SHG mode) was irradiated on a titanium substrate in an atmosphere-controlled chamber, and the substrate was then transported to an XPS analysis chamber without exposing it to air. The characteristics of the surface layer strongly depend on the laser power. When the power is relatively low, a titanium dioxide layer containing a small amount of nitrogen is formed on the substrate. Laser irradiation beyond a certain laser power is required to obtain a stoichiometric titanium nitride (TiN) layer. A TiN layer and an oxynitride layer with a TiO_xN_y-like structure are formed as the topmost and the lower surface layer, respectively, when the laser power exceeds this threshold value. The threshold laser power strongly depends on the wavelength of the laser, and this threshold value for the 532-nm laser is quite lower than that for the 1064-nm laser.     

Surface hardening of titanium by pulsed Nd:YAG laser irradiation at 1064- and 532-nm wavelengths in nitrogen atmosphere

The surface hardness of titanium modified by laser irradiation at different wavelengths in nitrogen atmosphere was investigated. Further, surface characteristics such as morphology, chemical state, and chemical composition in the depth direction were also studied. The size and depth of the craters observed in the laser-irradiated spots increased monotonically with an increase in the laser power. Furthermore, the crater formed by the 532-nm laser was deeper than that formed by the 1064-nm laser for the same laser power. Laser power beyond a certain threshold value was required to obtain a titanium nitride layer. When the laser power exceeds the threshold value, a titanium nitride layer of a few tens of nanometers in thickness was formed on the substrate, whereas a titanium oxide layer containing small amounts of nitrogen was formed when the laser power is below the threshold value. Thus, it was shown that laser irradiation using appropriate laser parameters can successfully harden a titanium substrate, and the actual hardness of the titanium nitride layer, measured by nanoindentation, was approximately five times that of an untreated titanium surface.     

Diode-pumped 1123-nm Nd:YAG laser

We demonstrated a diode-pumped Nd:YAG laser with a plano-concave resonator. When the pump power is 1.57 W, the output power of 1123-nm laser is 132 mW at the temperature of 20 ℃, and the power change is less than 2% in an hour. A periodically poled LiNbOa (PPLN) was used as outer cavity frequency-doubling crystal and 561-nm laser was observed.     

Structure of Carbon-coated or Silicon-oxide-coated ZnTe,ZnSe and ZnS Nanoparticles Produced by Gas Evaporation Technique

Ultrafine particles of typical chalcogenides have been produced by the advanced gas evaporation method (AGEM) and characterized by transmission electron microscopy. Zinc-blende nanoparticles less than 20-nm in size covered with SiO or carbon layer have been predominately produced. Many growth faults were observed in the zinc-blende particles above 20-nm in size. It has been found that particles less than 10-nm in size have no growth faults.     

Surgical effects on soft tissue produced by a 405-nm violet diode laser in vivo

This study evaluated the surgical performance of a 405-nm diode laser in vivo, using living rat liver tissue. Tissue was incised by irradiation with the laser at low output power ranging from 1 W (722 W/cm²) to 3 W (2165 W/cm²) on a manual control at a rate of 1 mm/s. As a control, incisions using a stainless scalpel were compared. Immediately after operation, the surface of the incisions was macroscopically observed and histopathologically evaluated by microscopy. Laser-ablated liver tissue was smooth with observable signs of remnant carbonization and easily acquired hemostasis. The thickness of the denatured layer increased in proportion to the output power; the coagulation layer did not thicken accordingly. Bleeding could not be stopped for tissues incised with the stainless scalpel. The 405-nm diode laser thus proved to be effective for ablating soft tissue with high hemostatic ability at low power.     

F2-laser ablation patterning of dielectric layers

Spatially defined patterning of multi-layer dielectric optical systems by laser-induced ablation is demonstrated. A 49-layer high-reflectivity mirror for 193-nm light was irradiated with F₂-laser light through the CaF₂-substrate to cleanly remove the whole dielectric stack by rear-sided ablation. The 157-nm light is absorbed efficiently by dielectric layers such as SiO₂ and Al₂O₃ that are typically used for ultraviolet (UV) transmission at 193-nm and longer wavelengths. Thus it is possible to ablate highly reflective UV-laser mirrors (HR 193 nm) and to create dielectric masks that withstand high power levels at 193 nm. A single 157-nm pulse with a fluence of less than 500 mJ/cm² is sufficient to cleanly ablate the whole layer stack with sharp edges and without debris deposition. Received: 31 October 2000 / Accepted: 14 November 2000 / Published online: 10 January 2001     

Compact efficient all-solid-state eye-safe laser with self-frequency Raman conversion in a Nd:YVO4 crystal

An efficient compact eye-safe laser at 1525 nm is presented by use of self-frequency Raman conversion in a diode-pumped actively Q-switched Nd:YVO4 1342-nm laser. At an incident pump power of 13.5 W, the self-stimulated Raman laser produces 1.2 W of 1525-nm average output power at a repetition rate of 20 kHz. The corresponding peak power at 1525 nm is generally greater than 10 kW for repetition rates from 5 to 20 kHz.     

Several hundred kHz repetition rate nanosecond pulses amplification in Er–Yb co-doped fiber amplifier

We have experimentally investigated several hundred kHz repetition rate 1,550-nm nanosecond pulses amplification in Er–Yb co-doped fiber amplifier (EYDFA). The experimental setup has three stage fiber amplifiers. At the output of the second stage EYDFA, Yb³⁺ ions induced amplified spontaneous emission (Yb-ASE) is not observed owing to the low pump power. In the third stage EYDFA, a simultaneously seeded 1,064-nm continuous-wave laser is used to control Yb-ASE. Without any additional 1,064-nm signal, significantly backward Yb-ASE which caused loss-induced heat accumulation at the input port of the pump combiner can be observed. The monitored temperature at the input port of the pump combiner rapidly grows from 30 to 80 °C when the pump power is turned from 20 to 32 W. When a 196-mW forward 1,064-nm laser is added, the monitored backward Yb-ASE power is significantly declined, and the monitored temperature is kept below 35 °C. But, the additional signal caused a large power fraction at 1,064 nm in the output laser. In our experiment at the maximum pump power of 48.5 W, the total output power is 20 W with ~6.4-W 1,550-nm pulsed laser and ~13-W 1,064-nm continuous-wave laser.     

Improvement in Light Output of Thin-Film Vertical-Cavity Surface-Emitting Lasers Transferred onto A1N Substrates

Thin-film 850-nm vertical-cavity surface-emitting lasers (VCSELs) were improved in light output power by designing both the reflectivity of the distributed Bragg reflector on the light-emitting side and also the degree of de-tuning between the photoluminescence peak and the etalon wavelength. Thin-film VCSELs, which were fabricated on A1N substrates by a functional layer transfer technique, are attractive components for the hybrid integration of optoelectronic devices. Their maximum output power was 2.8 mW and their slope efficiency was 0.40 W/A for the 15μm diameter VCSEL devices that we studied. Uniform spontaneous emission over the entire mesa area, and a single transverse laser mode up to 1.3 times the threshold current were confirmed by observing the near-field images.     

Tandem organic light-emitting diode with molybdenum tri-oxide thin film interconnector layer

A 10-nm thickness molybdenum tri-oxide (MoO₃) thin film was used as the interconnector layer in tandem organic light-emitting devices (OLEDs). The tandem OLEDs with two identical emissive units consisting of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB)/tris(8-hydroxyquinoline) aluminum (Alq₃) exhibited current efficiency-current density characteristics superior to the conventional single-unit devices. At 20 mA/cm², the current efficiency of the tandem OLEDs using the interconnector layers of MoO₃ thin film was about 4.0 cd/A, which is about twice of that of the corresponding conventional single-unit device (1.8 cd/A). The tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200 cd/m². The experimental results demonstrated that a MoO₃ thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs. Such an interconnector layer can be easily fabricated by simple thermal evaporation, greatly simplifying the device processing and fabrication processes required by previously reported interconnector layers. A possible explanation was proposed for the carrier generation of the MoO₃ interconnector layer.     

Study on CW Nd:YAG infrared laser at 1319 nm

A continuous wave (CW) Nd:YAG infrared laser at 1319 nm is reported in this paper. The energy level of 1319-nm wave was analyzed. The repression of 1064-nm lasing and enhancement of 1319-nm output power were discussed. Mirror coating and cavity structure were studied and a maximum CW output power of 43 W at 1319 nm was achieved in experiments.     

All-solid-state narrow-linewidth 455-nm blue laser based on Ti:sapphire crystal

A compact, all-solid-state, narrow-linewidth, pulsed 455-nm blue laser based on Ti：sapphire crystal is developed. Pumped by a 10-Hz, frequency-doubled all-solid-state Nd：YAG laser and injection-seeded by an external cavity laser diode, the narrow-linewidth 910-nm laser with pulse width of 20 ns is obtained from a Ti：sapphire laser. 3.43-mJ blue laser can be obtained from the laser system by frequency-doubling with BBO crystal. This research is very useful to determine the roadmap of developing the practical, high power blue laser. This kind of laser will have potential application for underwater communication.     

Low-Threshold-Current and High-out-Power 660 nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R

We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80roW without kinks, and the maximum output power was 184roW at 22~C. The threshold current was 40 mA.     

Broadband Light-Emitting Diodes with One-Dimensional Photonic Crystal Layer

In this article, a broadband gallium-nitride-based light-emitting diode with a one-dimensional photonic crystal layer is investigated. The broadband light-emitting diode using the proposed backside reflector has high reflectance (>95%) over a 270-nm bandwidth in visible light at an arbitrary incidence angle. A broadband light-emitting diode of high output power due to the high reflectivity is achieved. Also reported are the results for light-emitting diodes by the transistor outline can (TO-can) package. The proposed light-emitting diodes possess broadband high reflected spectra, high output power for light extraction, and a good view angle.     

High color rendering index white organic light-emitting diode using levofloxacin as blue emitter

Levofloxacin(LOFX), which is well-known as an antibiotic medicament, was shown to be useful as a 452-nm blue emitter for white organic light-emitting diodes(OLEDs). In this paper, the fabricated white OLED contains a 452-nm blue emitting layer(thickness of 30 nm) with 1 wt% LOFX doped in CBP(4,4'-bis(carbazol-9-yl)biphenyl) host and a584-nm orange emitting layer(thickness of 10 nm) with 0.8 wt% DCJTB(4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran) doped in CBP, which are separated by a 20-nm-thick buffer layer of TPBi(2,2',2"-(benzene-1,3,5-triyl)-tri(1-phenyl-1H-benzimidazole). A high color rendering index(CRI) of 84.5 and CIE chromaticity coordinates of(0.33, 0.32), which is close to ideal white emission CIE(0.333, 0.333), are obtained at a bias voltage of 14 V. Taking into account that LOFX is less expensive and the synthesis and purification technologies of LOFX are mature, these results indicate that blue fluorescence emitting LOFX is useful for applications to white OLEDs although the maximum current efficiency and luminance are not high. The present paper is expected to become a milestone to using medical drug materials for OLEDs.     

A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications

We demonstrate a novel Si-rich SiN bilayer passivation technology for AlGaN/GaN high electron mobility transistors (HEMTs) with thin-barrier to minimize surface leakage current to enhance the breakdown voltage. The bilayer SiN with 20-nm Si-rich SiN and 100-nm Si$_{3}$N$_{4}$ was deposited by plasma-enhanced chemical vapor deposition (PECVD) after removing 20-nm SiO$_{2}$ pre-deposition layer. Compared to traditional Si$_{3}$N$_{4}$ passivation for thin-barrier AlGaN/GaN HEMTs, Si-rich SiN bilayer passivation can suppress the current collapse ratio from 18.54% to 8.40%. However, Si-rich bilayer passivation leads to a severer surface leakage current, so that it has a low breakdown voltage. The 20-nm SiO$_{2}$ pre-deposition layer can protect the surface of HEMTs in fabrication process and decrease Ga-O bonds, resulting in a lower surface leakage current. In contrast to passivating Si-rich SiN directly, devices with the novel Si-rich SiN bilayer passivation increase the breakdown voltage from 29 V to 85 V. Radio frequency (RF) small-signal characteristics show that HEMTs with the novel bilayer SiN passivation leads to $f_{\rm T}/f_{\rm max}$ of 68 GHz/102 GHz. At 30 GHz and $V_{\rm DS} = 20$ V, devices achieve a maximum $P_{\rm out}$ of 5.2 W/mm and a peak power-added efficiency (PAE) of 42.2%. These results indicate that HEMTs with the novel bilayer SiN passivation can have potential applications in the millimeter-wave range.     

Tunable photonic crystal fiber coupler based on a side-polishing technique

A tunable photonic crystal fiber (PCF) coupler, which couples part of the optical power in one PCF with that in another PCF, has been made by side polishing. We fabricated the PCF coupler by mating two side-polished PCFs. We achieved evanescent field coupling between the core modes of the two PCFs by using side polishing to bring the cores close to each other. By adjusting the mating angle between the two side-polished PCFs we obtained as much as 90% tunability in the coupling ratio. The spectrum of the coupling ratio was almost flat, with small ripples, over a 400-nm wavelength range.     

Control of spin waves in a thin film ferromagnetic insulator through interfacial spin scattering

Control of spin waves in a ferrite thin film via interfacial spin scattering was demonstrated. The experiments used a 4.6 μm-thick yttrium iron garnet (YIG) film strip with a 20-nm thick Pt capping layer. A dc current pulse was applied to the Pt layer and produced a spin current across the Pt thickness. As the spin current scatters off the YIG surface, it can either amplify or attenuate spin-wave pulses that travel in the YIG strip, depending on the current or field configuration. The spin scattering also affects the saturation behavior of high-power spin waves.     

Crosstalk reduced and low power consumption polymeric thermo-optic switch

A new polymeric 1 × 2 thermo-optic switch with significantly low crosstalk and low power consumption is presented. The thermo-optic coefficients of the core layer and the cladding layer are obviously different to each other. The refractive index of the core changes so that it would be less than that of the top cladding when the temperature is sufficiently high. Using this phenomenon, low crosstalk performance is achieved. The result indicated that the crosstalk of the proposed device could be improved from −20 to −60 dB. The switching insertion loss is 1.71 dB and the total heating power is no more than 16 mW.