Grain-boundary diffusion and solubility of helium in submicrocrystalline palladium

The diffusion and solubility of helium in palladium with a submicrocrystalline structure are investigated by thermal desorption of helium from He-saturated specimens at temperatures T = 293–508 K and saturation pressures P = 0.1–35 MPa. As the saturation pressure rises, the effective diffusion coefficient increases, exhibits a plateau, and then decreases to its initial value. Along with the four plateaus discovered earlier, the solubility versus saturation pressure dependence in the range 25.5–35.0 MPa demonstrates a fifth plateau, where the solubility is as high as (3.0 ± 0.4) × 10¹⁷ cm⁻³. It is shown that the helium diffuses along grain boundaries, at which clusters (traps) consisting of eight to ten vacancies are localized, and dissolves in these clusters. The high value of C _eff in the fifth plateau is explained by pairwise merging of adjacent vacancy clusters. From the D _eff(P) dependences, the vacancy clusters concentration is estimated as C* = 2.32 × 10¹⁶ cm⁻³. Within the experimental error, this value coincides with that obtained from the solubility data. Calculations of the energy of helium-defect interaction in submicrocrystalline Pd that are made using the molecular dynamics method support the experimental results.     

Diffusion and solubility of electrically active iron atoms in gallium arsenide

Iron diffusion in GaAs at arsenic pressure 1 atm is studied. The temperature dependences of the diffusion coefficient and solubility of electrically active iron atoms in GaAs are determined. The dependences can be described by the Arrhenius equations with the following parameters: D ₀ = 1.61 cm²/s and E = (2.16 ± 0.47) eV (for diffusion) and N _S ⁰ = 4.62 ⋅ 10²³ cm⁻³ and E _S = (1.61 ± 0.16) eV (for solubility). The results obtained are compared with the earlier published data. The concentration of electrically active iron atoms is shown to be about 2 times lower than the total iron concentration in GaAs. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 39–41, November, 2008.     

Optical properties of laser-produced plasmas from Cd and layered crystalline CdAl2Se4 targets

An experimental investigation into emission by plasmas from Cd and crystalline CdAl₂Se₄ targets irradiated with a pulse-periodic YAG: Nd³⁺ laser is presented. The laser operates at a pulse width of 20 ns and provides 1−2×10⁹ W/cm² at the focus. The spectral and time characteristics of the emission are examined. The main findings are as follows: (1) The strongest lines correspond to the transitions from the 6³ S ₁ and 5³ D ₂ levels of Cd I. (2) With the Cd target, the recombination bottlenecks are 5² D _5/2 of Cd II (E _up=20.11 eV) and 8³ D _{1, 3} of Cd I (E _up=8.60–8.65 eV). (3) The average electron temperature outside the core of the plume is 0.64 eV. (4) For the 508.6-nm line of Cd I, the high filling rate of the 6³ S ₁ upper energy level may be related to the rapid recombination of cadmium ions with electrons via the intermediate levels of Cd⁻ at 6.82 and 7.24 eV.     

Diffusion of deuterium in tantalum from internal friction measurements (Gorsky effect)

The long-range diffusion of deuterium in tantalum has been investigated as a function of temperature by means of the anelastic process due to redistribution of deuterium impurities between compressed and dilated regions of the sample, under an applied stress alternating at about 4 Hz. The diffusion coefficient was found to obey an Arrhenius-type law in the temperature range 200–390 K; a deviation was observed at lower temperatures. The diffusion parameters in the exponential region areD _0D=(3.3±1.5)×10⁻⁴ cm²/s, andW _D=(0.176±0.008) eV.     

Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation

Using the hydrogen neutralization of the boron acceptor, the diffusion of hydrogen is investigated in the temperature range 20 °–160 °C. The hydrogenation is performed by low-energy implantation. We observe a fast initial hydrogen migration, followed by a long-time diffusion phase that is described by an effective diffusion coefficientD _eff=D _{0 eff} exp(–E _a/kT) withD _{0 eff}–cm²s^–1 andE _a=(0.83±0.05) eV. No deeper hydrogen migration is detected for implantation times longer than – 30 min. Our data are explained by the build-up of a large amount of molecular hydrogen beneath the surface, which strongly hinders the transfer of the implanted hydrogen to the bulk. The thermal reactivation kinetics of the neutralized boron show a rapid initial step followed by a longtime thermally activated second order phase, which is limited by the recombination of hydrogen into molecules.     

Experimental determination of the rate constant for spin exchange in collisions of polarized metastable helium atoms with ground-state cesium atoms

The rate constant for spin exchange in a system consisting of a metastable helium atom and an alkali-metal atom is determined. An experiment on optical orientation of atoms established that the rate constant for spin exchange in a collision of a metastable 2³ S ₁ helium atom with a cesium atom in the 6² S _1/2 ground state equals (2.8±0.8)×10⁻⁹ cm³ s⁻¹. The rate constant for chemoionization of cesium atoms by metastable helium atoms was determined at the same time to be (1.0±0.3)×10⁹ cm³s⁻¹. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 3, 145–148 (10 August 1997)     

Proton spin-lattice relaxation in iron fluosilicate

Proton T₁ of FeSiF₆·6H₂O is proportional to exp (Δ/kT)at liquid helium temperatures, with Δ ≈ D - 3E. We find the crystal field splitting of the Fe²⁺ ion in this salt to be D = (12.2 ± 1.0) cm^-1 using E = 0.54 cm^-1.     

Helium defectoscopy of cerium gadolinium ceramics Ce0.8Gd0.2O1.9 with a submicrocrystalline structure in the impurity disorder region

The concentration of impurity anion vacancies formed upon the dissociation of gadolinium-vacancy complexes has been determined using helium defectoscopy of the cerium gadolinium ceramics Ce_0.8Gd_0.2O_1.9 with a submicrocrystalline structure in the temperature range T = 740–1123 K and at saturation pressures ranging from 0.05 to 15 MPa. It has been found that the energy of dissociation of gadoliniumvacancy complexes is E _eff ^D = 0.26 ± 0.06 eV, and the energy of dissolution of helium in anion vacancies in the impurity disorder region is E ^P = ?0.31 ± 0.09 eV. The proposed mechanism of dissolution has been confirmed by the investigation of the electrical conductivity of the cerium gadolinium ceramics, as well as by the high-speed molecular dynamics simulation of the dissociation of gadolinium-vacancy complexes. It has been assumed that a decrease in the effective dissolution energy in comparison with the results of the previously performed low-temperature investigations is caused by the mutual repulsion of vacancies formed upon the dissociation of gadolinium-vacancy complexes in highly concentrated solutions of gadolinium in CeO₂ with increasing temperature.     

High Temperature Diffusion of 6Li Adsorbed on a Ru(001) Single Crystal Surface as Seen by Pulse NMR

Diffusion measurements on lithium atoms adsorbed on a ruthenium single crystal were performed in the high temperature regime (1100–1200 K). Pulsed NMR techniques were utilized to produce and observe the decay of magnetization patterns from which the diffusion coefficient was extracted. The observed temperature dependence could be described by D = (10 ± 7) cm²/s · exp (−(0.46 ± 0.07) eV/kT). The extremely high diffusion coefficient and prefactor are understood by a gas like adsorbate behavior. The electric field gradient has been measured with ⁷Li: V _zz = −5.0 ± 0.1 10¹⁵ V/cm² with an inhomogeneity of less then 1% as judged by the width of the satellite transitions.     

Iodine as a donor in CdS

Iodine doped single crystals of CdS were grown from the vapor phase. High temperature Hall effect measurements for the crystals equilibrated with Cd and S₂ vapors at temperatures between 700 and 1000°C gave the free electron concentration as a function of p_Cd or p_S2 and temperature. The results can be explained on the basis of a model in which the CdS is saturated with iodine at low p_Cd (=high p_S2) but unsaturated at high p_Cd.The solubility of iodine in CdS is given by c_t=1·73×10²²p_S2^?1/8 exp (?1·045 eV/kT) cm^?3 atm^?1/8=4·62×10¹⁹p_Cd^1/4 exp (?0·195 eV/kT) cm^?3 atm^1/4The formation of pairs (I_SV_Cd)′ from I_S^· and V_Cd″ is governed by the equilibrium constant K_{P(I, V)}=4 exp (≤1·1 eV/kT)If Cd diffusion occurs primarily by free vacancies, the Cd^* tracer self diffusion leads to a vacancy mobility of (1·2±0·5)×10^?5 cm² sec^?1 at 900°C, in agreement with results reported by Woodbury [12], but (7±3) times larger than reported by Kumar and Kroger [10].     

Crystallization-water-stimulated dynamic conductivity

In water-molecule-doped barium peroxide and barium oxide, a step increase in the dynamic conductivity to ∼10⁻³ Ω⁻¹ cm⁻¹ was found. The increase is observed when water molecules are present in two nonequivalent states in the lattice, with concentrations of the molecules n _t of ≥2.2×10²¹ cm⁻³. At n>n _t , the conductivity does not depend on the number of molecules in the lattice but is temperature-dependent, obeying the law σ(T = C ₁exp(−E ₁/kT) + C ₂exp(−E ₂/kT. The run of the σ(n, T) curve is explained by trapping electrons that result from H₂O dissociation and by two sorts of carrier jumps between localized and delocalized states.     

Measurement of diffusion coefficients of Ag in YBa2Cu3O7 by the EDXRF technique

The diffusion of Ag in superconducting YBa₂Cu₃O₇ ceramic was studied over the temperature range 700–850 °C by the energy‐dispersive X‐ray fluorescence (EDXRF) technique. For the excitation of silver atoms, an annular Am‐241 radioisotope source (50 mCi) emitting 59.543 keV photons was used. The temperature dependences of Ag diffusion coefficients in grains (D₁) and over the grain boundaries (D₂) are described by the equations D₁ = 1.4 × 10^?2exp[?(1.18 ± 0.10)/kT] and D₂ = 3.1 × 10^?4exp[?(0.87 ± 0.10)/kT]. Copyright © 2003 John Wiley & Sons, Ltd.     

Diffusionskonstante und charakteristische Absorption vor der Bandkante von Mn in ZnO-Kristallen

ZnO single crystals were doped with Mn and Co by diffusion. In the temperature range from 1400–1600 K the Mn and Co-diffusion-constants were determined:D _Mn=3.2 · 10^?3 exp (?2.87 eV/kT) cm² sec^?1 andD _Co=1·10exp(?3.98 eV/kT) cm² sec^?1. The Mn doped ZnO crystals show a characteristic colour due to an absorption near the intrinsic absorption edge. The corresponding absorption spectra were measured forE⊥c andE∥c. A discussion of different absorption mechanism shows that a charge-transfer transition is responsible for this absorption.     

Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique

The diffusion of Au in dislocation-free or plastically deformed Si (10¹¹ to 10¹³ dislocations/m²) was measured with the aid of the spreading-resistance technique. The Au profiles produced indislocation-free Si slices by in-diffusion from both surfaces possess nonerfc-type U shapes as predicted by the so-called kick-out diffusion model. This model is used to calculate the contribution of self-interstitials to the (uncorrelated) Si self-diffusion coefficient,D _I ^SD =0.064×exp(–4.80 eV/kT)m² s^–1, from the present and previous data on the diffusivity and solubility of Au in Si in the temperature range 1073–1473 K. Inhighly dislocated Si the diffusion of Au is considerably faster than in dislocation-free Si. From the erfc-type penetration profiles found in this case, effective Au diffusion coefficients were deduced and combined with data on the solubility of Au in Si. ThusC _i ^eq D _i=0.0064 ×exp(–3.93 eV/kT)m² s^–1 was obtained in the temperature range 1180–1427 K, whereC _i ^eq andD _i are the solubility and diffusivity of interstitial Au in Si.     

The density and pressure of helium in bubbles in metals

Abstract

The energy shift of the He 1¹S₀?2¹P₁ transition, ΔE(n), can be used to determine the density, n, of He in bubbles in metals. A self-consistent band structure calculation for solid fcc He yields a linear relationship ΔE=C.n with C _th=22 × 10^?3 eV nm³. Systematic electron energy loss spectroscopy and transmission electron microscopy studies of He bubbles in Al for various He doses and temperatures result in C_exp=(24±8).10^?3 eV nm³ in agreement with theory. The analysis is consistent with the assumption that dislocation loop punching is the dominant bubble growth mechanism during high-dose room temperature implantation. The application to He bubbles in Ni indicates a maximum He density of n=0.2 × 10³ nm^?3 for which He should be solid at room temperature.     

Nature of conduction via impurities in uncompensated silicon

The static conductivity σ(E) and photoconductivity (PC) at radiation frequencies ħω=10 and 15 meV in Si doped with shallow impurities (density N=10¹⁶−6×10¹⁶ cm⁻³, ionization energy ε₁≃45 meV) with compensation K=10⁻⁴−10⁻⁵ in electric fields E=10–250 V/cm are measured at liquid-helium temperatures T. Special measures are taken to prevent the high-frequency part of the background radiation (ħω>16 meV) from striking the sample. It is found that the conductivity σ(E) is due to carrier motion along the D ⁻ band, which is filled with carriers under the influence of the field E. In fields E<E _q (E _q ≃100–200 V/cm) the carrier motion consists of hops along localized D ⁻ states in a 10–15 meV energy band below the bottom of the free band (energy ε=ε₁); for E>E _q carriers drift along localized D ⁻ states with energy ε∞ε₁−10 meV. An explanation is proposed for the threshold behavior of the field dependence of the photo-and static conductivities. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 232–236 (25 August 1997)     

Effect of the ionic radius on jump frequencies of alkaline earth cations in NaCl crystals

By comparing diffusion coefficientsD of bivalent cations Ba²⁺, Ca²⁺, Sr²⁺ in NaCl crystals it was shown that in the temperature range above 550 °CD (Ba²⁺)>D (Sr²⁺)>D (Ca²⁺) is valid. Temperature dependences of jump frequenciesw ₂ of these cations are described byw ₂ (Ba²⁺)=(2·15±0·55) × 10¹² × exp {?(0·817±0.007)/kT};w ₂ (Sr²⁺)=(2·9±1·1) × 10¹² × exp {?(0·84±0.02)/kT} andw ₂ (Ca²⁺)=(5·5±6·5) × 10¹⁰ × exp {?(0·51±0·07)/kT}. It was demonstrated that in NaCl crystals the activation enthalpy and the preexponential factor of the jump frequencyw ₂ increase with increasing ionic radius and mass of the bivalent alkaline earth cation.     

Trap-centers of self-interstitials in silicon

Deep-level profiles were measured radially acrossn-type FZ silicon wafers containing A-swirl defects by applying DLTS to an array of Schottky contacts. The trapparameters were obtained very accurately using a computer-fit procedure for the full DLTS peaks. Two acceptor levels atE _c −0.49 eV (σ _n =6.6×10⁻¹⁶cm²) andE _c −0.07 eV (σ _n =4.6×10⁻¹⁶cm²) were observed, which varied oppositely to the A-swirl defect density. At short ranges (1–2mm) the trap concentration-profile was smeared out and did not follow the strong fluctuations in the etch pattern. Both levels were measured together with the same concentration. The profiles indicate outdiffusion. A level atE _c −0.14 eV (σ _n =1.1×10⁻¹⁶cm²) was not related to A-swirl defects. A level atE _c −0.11 eV (σ _n =1.1×10⁻¹⁵cm²) was only detected in one ingot. The properties of the deep level atE _c −0.49 eV are discussed in the light of published DLTS results reported for γ-irradiation, laser annealing after self-implantation, annealing under pressure and oxidation of silicon samples. It is concluded, that this level is related to interstitial silicon rather than to an impurity.     

Diffusion study of nitrogen implanted into <Emphasis Type="Italic">α</Emphasis>-Hf using the nuclear resonance technique

The diffusion of nitrogen in α-Hf was studied in the temperature range of (823–1123) K using the ion implantation and nuclear resonance techniques. The measurements show that the diffusion coefficients follow the Arrhenius behavior D(T)=D ₀exp (−Q/RT) with D ₀=(5.5±2.1)×10⁻⁷ m²/s and Q=(228±1) kJ/mol. A comparison of the present results with the previous one is done.     

Desorption kinetics and surface diffusion of potassium,rubidium and cesium on a silicon(111)7 × 7-surface

Using pulsed atomic beam technique and a surface ionization ion microscope, the desorption kinetics and the surface diffusion of the alkalis potassium, rubidium and cesium were investigated on a Si(111)7 × 7-surface at extremely low alkali coverages. In the temperature range 1120 … 800 K, the mean adsorption lifetime τ(T) = τ₀ · exp(E_desⁱ/kT) and the mean diffusion length x(T) - defined in the equilibrium between adsorption, diffusion and desorption - were measured. From these data the diffusion constant D(T) = D₀ · exp(-E_diff/kT) was obtained as D = x^?2/τ. For temperatures T ? 750 K, the diffusion constant was calculated from nonstationary alkali concentration profiles using the Boltzmann-Matano method. From the temperature dependence of these quantities the parameters of desorption (E_des,ⁱ τ₀) and surface diffusion (E_diff, D₀) for K, Rb and Cs on Si(111) were obtained. The values of E_diff and D₀ are comparably high and may be interpreted by non-localized diffusion according to a model proposed by Bonzel (Surf. Sci. 21 (1970) 45).