Femtosecond laser-induced damage of gold films

Single- and multi-shot ablation thresholds of gold films in the thickness range of 31-1400 nm were determined employing a Ti:sapphire laser delivering pulses of 28 fs duration, 793 nm center wavelength at 1 kHz repetition rate. The gold layers were deposited on BK7 glass by an electron beam evaporation process and characterized by atomic force microscopy and ellipsometry. A linear dependence of the ablation threshold fluence F_th on the layer thickness d was found for d ≤ 180 nm. If a film thickness of about 180 nm was reached, the damage threshold remained constant at its bulk value. For different numbers of pulses per spot (N-on-1), bulk damage thresholds of ∼0.7 J cm⁻² (1-on-1), 0.5 J cm⁻² (10-on-1), 0.4 J cm⁻² (100-on-1), 0.25 J cm⁻² (1000-on-1), and 0.2 J cm⁻² (10000-on-1) were obtained experimentally indicating an incubation behavior. A characteristic layer thickness of L_c ≈ 180 nm can be defined which is a measure for the heat penetration depth within the electron gas before electron-phonon relaxation occurs. L_c is by more than an order of magnitude larger than the optical absorption length of α⁻¹ ≈ 12 nm at 793 nm wavelength.     

Effect of thickness on the structure, morphology and optical properties of sputter deposited Nb2O5 films

Nb₂O₅ films with the thickness (d) ranging from 55 to 2900 nm were deposited on BK-7 substrates at room temperature by a low frequency reactive magnetron sputtering system. The structure, morphology and optical properties of the films were investigated by X-ray diffraction, atomic force microscopy and spectrophotometer, respectively. The experimental results indicated that the thickness affects drastically the structure, morphology and optical properties of the film. There exists a critical thickness of the film, d_cri =2010 nm. The structure of the film remains amorphous as d < d_cri. However, it becomes crystallized as d > d_cri. The root mean square of surface roughness increases with increasing thickness as d > 1080 nm. Widths and depths of the holes on film surface increase monotonously with increasing thickness, and widths of the holes are larger than 1000 nm for the crystalline films. Refractive index increases with increasing thickness as d < d_cri, while it decreases with increasing thickness as d > d_cri. In addition, the extinction coefficient increases with increasing thickness as d > d_cri.     

Quantum-mechanical vs. semi-classical spectral-line widths and shifts from the line core in the non-impact region for the Ar-perturbed/ K-radiator system

New quantum-mechanical (QM) and semi-classical (SC) shifts (d's) and widths (HWHM's, w's) were measured from the line core of computed full spectral-line shapes for the Ar-perturbed/K-radiator system (K/Ar). The initial state of our model was based on a 4p²P_3/2,1/2 pseudo-potential for the K/Ar system, and the final state on a zero potential. The Fourier transform of the line shape formed the basis for the computations. Excellent agreement was found between the QM and SC values of d and of w in a high-pressure (P) non-impact region, which was characterized by a √P dependence of w and a P dependence of d. These agreements were shown to be another example of a correspondence between classical (SC) quantities and QM quantities in the limit of large quantum numbers. Typically at P=1×10⁶ Torr and T=400 K, w_QM=448 cm⁻¹ and w_SC=479 cm⁻¹, where the deviation from the mean is ±3.3%. Also, d_QM=−3815 cm⁻¹ and d_SC=−3716 cm⁻¹, where the deviation from the mean is ±1.3%. A new general method was formulated which yielded a definite pressure P₀, which was defined as an upper limit to the low-pressure impact approximation and a lower limit to the non-impact region.     

Light-induced ultrafast phase transitions in VO2 thin film

Vanadium dioxide shows a passive and reversible change from a monoclinic insulator phase to a metallic tetragonal rutile structure when the sample temperature is close to and over 68 °C. As a kind of functional material, VO₂ thin films deposited on fused quartz substrates were successfully prepared by the pulsed laser deposition (PLD) technique. With laser illumination at 400 nm on the obtained films, the phase transition (PT) occurred. The observed light-induced PT was as fast as the laser pulse duration of 100 fs. Using a femtosecond laser system, the relaxation processes in VO₂ were studied by optical pump-probe spectroscopy. Upon a laser excitation an instantaneous response in the transient reflectivity and transmission was observed followed by a relatively longer relaxation process. The alteration is dependent on pump power. The change in reflectance reached a maximum value at a pump pulse energy between 7 and 14 mJ/cm². The observed PT is associated with the optical interband transition in VO₂ thin film. It suggests that with a pump laser illuminating on the film, excitation from the d_θ,? - state of valence band to the unoccupied excited mixed d_θ,?-π* - state of the conduction band in the insulator phase occurs, followed by a resonant transition to an unoccupied excited mixed d_θ,?-π* - state of the metallic phase band.     

Fiber laser annealing of nanocrystalline PZT thick film prepared by aerosol deposition

Nanocrystalline PZT thick films (1 mm square and over 10 μm thick) directly deposited onto stainless-steel substrates (PZT/SUS) by aerosol deposition (AD) technique and then annealed using focused laser beam with a fiber laser to suppress thermal damage to the back sides of the PZT/SUS and substrate near the film edge and to retain the dielectric and/or ferroelectric properties of the PZT/SUS. Compared with CO₂ laser annealing, fiber laser annealing suppressed thermal damage to the substrate. Compared with PZT/SUS annealed at 600 °C using an electric furnace, PZT/SUS annealed at 600 °C using a fiber laser showed superior properties, namely, dielectric constant ? > 1200 at a frequency of 100 Hz, remanent polarization P_r > 30 μC/cm², and coercive field strength E_c < 50 kV/cm at a frequency of 10 Hz. Furthermore, the grain growth for the PZT/SUS formed by AD technique and annealed by fiber laser irradiation was occurred within the laser spot size.     

High pressure behaviour of KHSO4 studied by electrical impedance spectroscopy

Measurements of the electrical conductivity were performed in KHSO₄ at pressures between 0.5 and 2.5 GPa and in the temperature range 120-350 °C by the use of the impedance spectroscopy. The temperatures of the α-β phase transition (T_Tr) and of the melting (T_m), determined from the Arrhenius plots ln(σT) vs. 1/T, increase with pressure up to 1.5 GPa having dT/dP∼+45 K/GPa. Above the pressure 1.5 GPa, the pressure dependencies of T_Tr and T_m are negative dT/dP∼−45 K/GPa. At pressures above 0.5 GPa, the reversible decomposition of KHSO₄ into K₃H(SO₄)₂+H₂SO₄ (and probably into K₅H₃(SO₄)₄+H₂SO₄) affects the electrical conductivity of KHSO₄, with the typical values of the protonic electrical conductivity, c. 10⁻¹ S/cm at 2.5 GPa.     

Laser synthesis of nanostructures based on transition metal oxides

Nanostructures based on iron oxides in the form of thin films were synthesized while laser chemical vapor deposition (LCVD) of elements from iron carbonyl vapors (Fe(CO)₅) under the action of Ar⁺ laser radiation (λ_L = 488 nm) on the Si substrate surface with power density about 10² W/cm² and vapor pressure 666 Pa. Analysis of surface morphology and relief of the deposited films was carried out with scanning electron microscopy (SEM) and atomic force microscopy (AFM). This analysis demonstrated their cluster structure with average size no more than 100 nm. It was found out that the thicker the deposited film, the larger sizes of clusters with more oxides of higher oxidized phases were formed. The film thickness (d) was 10 and 28 nm. The deposited films exhibited semiconductor properties in the range 170-340 K which were stipulated by oxide content with different oxidized phases. The width of the band gap E_g depends on oxide content in the deposited film and was varied in the range 0.30-0.64 eV at an electrical field of 1.6 × 10³ V/m. The band gap E_g was varied in the range 0.46-0.58 eV at an electrical field of 45 V/m. The band gap which is stipulated by impurities in iron oxides E_i was varied in the range 0.009-0.026 eV at an electrical field of 1.6 × 10³ V/m and was varied in the range 0-0.16 eV at an electrical field 45 V/m. These narrow band gap semiconductor thin films displayed of the quantum dimensional effect.     

Parametric analysis of the selective laser melting process

Selective laser sintering/melting (SLS/SLM) technology is used for manufacturing net-shaped objects from commercial Inox 904L powder with ≤20 μm particle size. Experiments were carried out on PHENIX-PM100 machine equipped with a 50 W cw fiber laser. Powder is layered by a roller over the surface of a 100 mm-diameter build cylinder. Optimal parameters of layer thickness and power input per unit speed for SLM were determined. It was shown that the greater the value of P/V ratio is, the larger is the remelted line (called as “vector”). Influence of the shifting of consecutive single vectors on the process of forming the first layer was studied. Different strategies for forming objects with less than 1 mm-sized inner structures were tested, as, for example, forming a 20 mm × 20 mm × 5 mm box with 140 μm-thick inner compartment walls.     

Effect of CeO2 buffer layer thickness on the structures and properties of YBCO coated conductors

Biaxially textured YBa₂Cu₃O_7−x (YBCO) films were grown on inclined-substrate-deposited (ISD) MgO-textured metal substrates by pulsed laser deposition. CeO₂ was deposited as a buffer layer prior to YBCO growth. CeO₂ layers of different thickness were prepared to evaluate the thickness dependence of the YBCO films. The biaxial alignment features of the films were examined by X-ray diffraction 2θ-scans, pole-figure, ?-scans and rocking curves of Ω angles. The significant influence of the CeO₂ thickness on the structure and properties of the YBCO films were demonstrated and the optimal thickness was found to be about 10 nm. High values of T_c = 91 K and J_c = 5.5 × 10⁵ A/cm² were obtained on YBCO films with optimal CeO₂ thickness at 77 K in zero field. The possible mechanisms responsible for the dependence of the structure and the properties of the YBCO films on the thickness of the CeO₂ buffer layers are discussed.     

Experimental constraints on the phase diagram of titanium metal

The phase transformations of titanium metal have been studied at temperatures and pressures up to 973 K and 8.7 GPa using synchrotron X-ray diffraction. The equilibrium phase boundary of the α-ω transition has a dT/dP slope of 345 K/GPa, and the transition pressure at room temperature is located at 5.7 GPa. The volume change across the α-ω transition is ΔV=0.197 cm³/mol, and the associated entropy change is ΔS=0.57 J/mol K. Except for ΔV, our results differ substantially from those of previous studies based on an equilibrium transition pressure of 2.0 GPa at room temperature. The α-ω-β triple point is estimated to be at 7.5 GPa and 913 K, which is comparable with previous results obtained from differential thermal analysis and resistometric measurements. An update, more accurate phase diagram is established for Ti metal based on the present observations and previous constraints on the α-β and ω-β phase boundaries.     

In situ monitoring the pulse CO2 laser interaction with 316-L stainless steel using acoustical signals and plasma analysis

In most laser material processing, material removal by different mechanisms is involved. Here, application of acoustic signals with thermoelastic (below threshold) and breakdown origin (above threshold) together with plasma plume analysis as a simple monitoring system of interaction process is suggested. In this research the interaction of pulse CO₂ laser with 200 ns duration and maximum energy of 1.3 J operating at 1 Hz with austenitic stainless steel (316-L) is reported. The results showed that the non-linear point of the curve can serve as a useful indicator of melting fluence threshold (in this case ≈830 J cm⁻²) with corresponding temperature calculated using plasma plume analysis. Higher acoustic amplitudes and larger plasma plume volume indicates more intense interaction. Also, analysis showed that a phase explosion process with material removal (ejecta) in the form of non-adiabatic (i.e., d_t ? α⁻¹) is at play after laser pulse is ended. Also, SEM photographs show different surface quality medication at different laser intensities, which indicates the importance of recoil momentum pressure and possibly electrons and ions densities in heat transfer. Finally, electrochemical test indicate an improved corrosion resistance for laser treated samples compared to untreated ones.     

Optical properties of methane to 288 GPa at 300 K

Optical properties of solid methane (CH₄) were studied at high pressure and room temperature using a diamond anvil cell. Reflectivity and transmission measurements were used to measure the refractive index to 288 GPa. Fabry-Perot interferometery was used to measure the sample thickness to 172 GPa. This data was fitted to the derived expression of thickness vs. pressure that was then used to calculate the thickness to 288 GPa. This in turn was combined with optical absorption experiments to obtain the absorption coefficient and hence the extinction coefficient k^*. From combined reflection and absorption experiments the refractive index n=n_s+ik^* was obtained. The index of refraction and the ratio of molar refraction to molar volume showed a large increase between 208 and 288 GPa. This behavior indicated that a phase transformation of insulator-semiconductor might have occurred in solid CH₄ by 288 GPa.     

Magnetostriction trend of non-oriented 6.5% Si–Fe

Non-oriented electrical steel is produced in strip form typically 0.35–1.0 mm thick and containing 0–3 wt% silicon. It is well-known that non-oriented electrical steel is not quite isotropic but has small anisotropy. In the last decade, NKK produced 0.1 mm thick, non-oriented steel 6.5% Si which has applications such as in high-frequency transformer due to its high electrical resistivity, low core losses, near zero magnetostriction, and high permeability. The magnetostriction of 6.5% silicon steel samples with dimensions 280 mm×30 mm×0.1 mm was measured when magnetised sinusoidally between 0.5 and 1.0 T at frequencies between 0.5 and 6 kHz. Test samples were clamped at one end and the peak-to-peak displacement of the free end was measured with the aid of the single-point laser vibrometer. The average peak–peak magnetostriction was 0.2–0.25 με apart from a sharp rise to 1.2 με at 2 kHz magnetising frequency. This agrees well with the predicted value of 2 kHz for l=0.28 m, d=7430 kg/m³ and E=166 GPa. This shows that although the 6.5% silicon steel is often thought of as having near zero magnetostriction, care is needed to avoid lamination lengths corresponding to resonance points which could induce higher noise in laminated cores.     

Ceramic components manufacturing by selective laser sintering

In the present paper, technology of selective laser sintering/melting is applied to manufacture net shaped objects from pure yttria-zirconia powders. Experiments are carried out on Phenix Systems PM100 machine with 50 W fibre laser. Powder is spread by a roller over the surface of 100 mm diameter alumina cylinder. Design of experiments is applied to identify influent process parameters (powder characteristics, powder layering and laser manufacturing strategy) to obtain high-quality ceramic components (density and micro-structure).The influence of the yttria-zirconia particle size and morphology onto powder layering process is analysed. The influence of the powder layer thickness on laser sintering/melting is studied for different laser beam velocity V (V = 1250-2000 mm/s), defocalisation (−6 to 12 mm), distance between two neighbour melted lines (so-called “vectors”) (20-40 μm), vector length and temperature in the furnace. The powder bed density before laser sintering/melting also has significant influence on the manufactured samples density.Different manufacturing strategies are applied and compared: (a) different laser beam scanning paths to fill the sliced surfaces of the manufactured object, (b) variation of vector length (c) different strategies of powder layering, (d) temperature in the furnace and (e) post heat treatment in conventional furnace. Performance and limitations of different strategies are analysed applying the following criteria: geometrical accuracy of the manufactured samples, porosity. The process stability is proved by fabrication of 1 cm³ volume cube.     

Figures of merit of magnetostrictive single crystal iron-gallium alloys for actuator and sensor applications

Energy density, magnetomechanical coupling factor and a dimensionless sensing gage factor of 〈1 0 0〉 oriented single crystal iron-gallium alloys with 16, 17.5, 19, 24.7 and 29 at% gallium were studied as functions of stress and magnetic field. To estimate these quantities, the samples were characterized under different quasi-static stress and magnetic field conditions. The experimental behavior was modeled using an energy-based non-linear approach. Both the experimental data and the model simulations were used to calculate material parameters such as magnetic permeability, piezo-magnetic strain coefficient (d₃₃), inverse piezo-magnetic coefficient (stress sensitivity, d*₃₃) and Young's modulus in the material. These quantities were used to obtain energy density, magnetomechanical coupling factor and sensing gage factor as functions of magnetomechanical conditions. Maximum energy density of around 3 kJ/m³, magnetomechanical coupling factor higher than 0.75 and sensing gage factor on the order of 10³ were calculated.     

Resonantly enhanced three-photon excitation spectra of lithium

We present the first measurement on the resonantly enhanced three-photon excitation spectra of natural lithium using a Nd:YAG laser pumped dye laser in conjunction with a thermionic diode ion detector. Exploiting the linear and circular polarizations, the np ²P_3/2(8 ? n ? 11) and nf  ²F_7/2 (8 ? n ? 38) series have been observed via three-photon excitation from the ground state. The measured level energies reveal a dynamic shift from calculated values, which increases with an increase of the principal quantum number n. The ac stark shift and line broadening mechanisms are studied as a function of laser intensity. It is noted that the width increases and the line center shifts towards the higher energy side as the laser intensity is increased. The maximum observed shift for the 12f ²F_7/2 line is 0.33 cm⁻¹ corresponding to the laser intensity variation from 1.34 × 10¹² W/m² to 1.03 × 10¹³ W/m², whereas its width increases from 0.36 cm⁻¹ to 0.82 cm⁻¹.     

Preparation of the La0.8Sr0.2MnO3 films on STO and LAO substrates by excimer laser-assisted metal organic deposition using the KrF laser

La_0.8Sr_0.2MnO₃ films were prepared on SrTiO₃ (STO) and LaAlO₃ (LAO) substrates using excimer laser-assisted metal organic deposition (ELAMOD). For the LAO substrate, no epitaxial La_0.8Sr_0.2MnO₃ film was obtained by laser irradiation in the fluence range from 60 to 110 mJ/cm² with heating at 500 °C. On the other hand, an epitaxial La_0.8Sr_0.2MnO₃ film on the STO substrate was formed by laser irradiation in the fluence range from 60 to 100 mJ/cm² with heating at 500 °C. To optimize the electrical properties for an IR sensor, the effects of the laser fluence, the irradiation time and the film thickness on the temperature dependence of the resistance and temperature coefficient of resistance (TCR: defined as 1/R·(dR/dT)) of the LSMO films were investigated. An LSMO film on the STO substrate that showed the maximum TCR of 3.9% at 265 K was obtained by the ELAMOD process using the KrF laser.     

LD end pumped, actively mode locked and passively Q-switched Nd:YAP laser at 1341 nm

An end pumped Nd:YAP laser at 1341 nm is actively mode locked and passively Q-switched. Pumping was done with a pulsed high power laser diode with maximum power 425 W. V³⁺:YAG with 61% initial transmission served as saturable absorber, and an acousto-optic modulator is used for active mode locking. The output pulse train with 69 ns duration has a total energy of 3.2 mJ with ±4% shot-to-shot fluctuation. The peak output energy of a single mode locked pulse is 0.25 mJ. The pulse duration of a single mode locked pulse is less than 800 ps. The output laser beam is nearly diffraction limited with 1.6 mm diameter, and beam propagation factor M² about 1.3.     

Properties of highly oriented spray-deposited fluorine-doped tin oxide thin films on glass substrates of different thickness

Transparent conducting thin films of fluorine-doped tin oxide (FTO) have been deposited onto the preheated glass substrates of different thickness by spray pyrolysis process using SnCl₄·5H₂O and NH₄F precursors. Substrate thickness is varied from 1 to 6 mm. The films are grown using mixed solvent with propane-2-ol as organic solvent and distilled water at optimized substrate temperature of 475 °C. Films of thickness up to 1525 nm are grown by a fine spray of the source solution using compressed air as a carrier gas. The films have been characterized by the techniques such as X-ray diffraction, optical absorption, van der Pauw technique, and Hall effect. The as-deposited films are preferentially oriented along the (2 0 0) plane and are of polycrystalline SnO₂ with a tetragonal crystal structure having the texture coefficient of 6.19 for the films deposited on 4 mm thick substrate. The lattice parameter values remain unchanged with the substrate thickness. The grain size varies between 38 and 48 nm. The films exhibit moderate optical transmission up to 70% at 550 nm. The figure of merit (φ) varies from 1.36×10⁻⁴ to 1.93×10⁻³ Ω⁻¹. The films are heavily doped, therefore degenerate and exhibit n-type electrical conductivity. The lowest sheet resistance (R_s) of 7.5 Ω is obtained for a typical sample deposited on 4 mm thick substrate. The resistivity (ρ) and carrier concentration (n_D) vary over 8.38×10⁻⁴ to 2.95×10⁻³ Ω cm and 4.03×10²⁰ to 2.69×10²¹ cm⁻³, respectively.     

A multichannel Raman spectrometry study of polyacetylene isomerization induced by laser irradiation

The multichannel Raman spectrometry has been used in the study of the isomerization reaction of an 80% cis PA film into a trans PA, using a laser beam for a double purpose. It is employed simultaneously as an activation agent inducing the isomerization reaction and the Raman diffusion. In each experience, the power of the laser beam Pⁱ(λ) was equivalent to the temperature. Twelve spectra have been recorded at different time periods tj = j·dt. The integrations of the Raman intensities related to two selected bands were numerically calculated.We also proposed an original method for the determination of the isomeric composition. A quantitative relationship between the equilibrium temperature and the laser beam power (in the range of laser power: 30 < Pⁱ(λ) < 300 mW) has been found. An estimate number of isomerized molecules N₀ and then a correction factors f_cis and f_trans were also obtained.