Silicon carbide nanocrystals growth on Si(1 0 0) and Si(1 1 1) from a chemisorbed methanol layer

SiC nanocrystals are grown at high temperature on Si(1 0 0) and Si(1 1 1) surfaces starting from a chemisorbed layer of methanol. The decomposition of this layer allows to have a well defined amount of carbon to feed SiC growth. Nanocrystals ranging from 10 nm to 50 nm with density from 100 μm⁻² to 1500 μm⁻² are obtained, and the total volume of produced SiC corresponds to carbon provided by the chemisorbed organic layer. Large differences in nanocrystal size and density, as well as in surface roughness, are observed depending on substrate orientation. The internal structure, crystallinity and epitaxy of nanocrystals grown on Si(1 0 0) are studied using cross-sectional transmission electron microscopy (XTEM), methanol adsorption and surface evolution using scanning tunnelling microscopy (STM). The joint application of XTEM and STM techniques allows a complete characterization of the geometry and chemical composition of these nanostructures.     

Growth of (√3 × √3)-Ag and (1 1 1) oriented Ag islands on Ge/Si(1 1 1) surfaces

We have studied the growth of Ag on Ge/Si(1 1 1) substrates. The Ge/Si(1 1 1) substrates were prepared by depositing one monolayer (ML) of Ge on Si(1 1 1)-(7 × 7) surfaces. Following Ge deposition the reflection high energy electron diffraction (RHEED) pattern changed to a (1 × 1) pattern. Ge as well as Ag deposition was carried out at 550 °C. Ag deposition on Ge/Si(1 1 1) substrates up to 10 ML has shown a prominent (√3 × √3)-R30° RHEED pattern along with a streak structure from Ag(1 1 1) surface. Scanning electron microscopy (SEM) shows the formation of Ag islands along with a large fraction of open area, which presumably has the Ag-induced (√3 × √3)-R30° structure on the Ge/Si(1 1 1) surface. X-ray diffraction (XRD) experiments show the presence of only (1 1 1) peak of Ag indicating epitaxial growth of Ag on Ge/Si(1 1 1) surfaces. The possibility of growing a strain-tuned (tensile to compressive) Ag(1 1 1) layer on Ge/Si(1 1 1) substrates is discussed.     

Morphological evidence for surface pre-melting on Si(1 1 1)

We present what we believe to be the first morphological evidence for the occurrence of surface pre-melting on the Si(1 1 1) surface. Our results complement the extensive previous evidence from diffraction and ion scattering techniques for the presence of pre-melted (liquid-like) layers on Si(1 1 1) below the bulk melting temperature and also suggest how atomic steps are involved in the initiation of such layers. Our results are based on atomic force microscopy studies of morphologies that are preserved when surfaces are annealed in a range of high temperatures and then rapidly cooled to room temperature for observation. A unique feature of the experiments is the use of specially prepared atomically flat or very low step density surfaces; this allows us to see how the liquid-like morphologies are associated with the steps and also allows the high temperature structures to survive the cooling process without being absorbed into the steps which normally would exist on a surface vicinal to (1 1 1). Quenched-in structures ascribed to pre-melting also act as sinks for diffusing ‘excess’ adatoms generated by the (1 × 1) to (7 × 7) transition and this leads to the formation of dendritic islands.     

Si nucleation on Si(1 1 1)-7 × 7: From cluster pairs to 2D islands

Nucleation of 2D islands in Si/Si(1 1 1)-7 × 7 molecular beam epitaxy is studied using scanning tunneling microscopy (STM). A detailed analysis of the population of small amorphous clusters coexisting on the surface with epitaxial 2D islands has been performed. It is shown that small clusters tend to form pairs. The pairs serve as precursors for 2D islands as confirmed by direct STM observations of the smallest 2D islands covering two adjacent half-unit cells of the 7 × 7 reconstruction. It is proved with scaling arguments that the critical nucleus for 2D island formation consists not only of the pair itself, but also includes additional adatoms not belonging to the stable clusters.     

Electron-induced attachment of chlorinated benzenes to Si(1 0 0)2 × 1

Thermal (300 K) and electron-induced reactions of benzene (Bz), chlorobenzene (ClPh), 1,2-dichlorobenzene (1,2-diClPh) and 1,4-dichlorobenzene (1,4-diClPh) with Si(1 0 0)2 × 1 have been examined by scanning tunneling microscopy (STM). Thermal reactions of Bz yielded predominantly the quadruply-σ-bound tight bridge, TB, configuration on top of the Si dimer-rows, For ClPh and 1,2-diClPh, which resembled one another, thermal reaction led with 45-50% yield to the doubly-σ-bound butterfly, BF, configuration, also on top of the dimer-row, and with 20% yield to a novel ‘displaced’, D, configuration to one side of a dimer-row. The adsorbate 1,4-diClPh was alone in favouring a configuration in which neighbouring dimer-rows were ‘linked’ (L) by a bright-feature centrally located between the dimer-rows. By ab initio calculation, we interpret D as due to the rupture of one C-Cl bond per adsorbate molecule, and L to the rupture of two C-Cl’s. The breaking of this weak bond is followed in the former case by attachment of the aromatic ring to one dimer-row, and in the latter to attachment to two adjacent dimer-rows. Application of a −5 V voltage pulse to the STM tip substantially increased the percentage of row-linking structures, L, for 1,4-diClPh, but neither −5 V nor +4-6 V volt pulses resulted in L-type binding of Bz. The postulated L product of 1,4-diClPh, with an aromatic ring linking the two inner Si atoms of adjacent dimer-rows and the two Cl’s on the outer Si atoms of the dimer-rows, is shown to be in accord with ab initio simulation of the observed STM image.     

STM study of successive Ge growth on “V”-stripe patterned Si (0 0 1) surfaces at different growth temperatures

The self-assembly process of Ge islands on patterned Si (0 0 1) substrates is investigated using scanning tunneling microscopy. The substrate patterns consist of one-dimensional stripes with “V”-shaped geometry and sidewalls inclined by an angle of 9° to the (0 0 1) surface. Onto these stripes, Ge is deposited in a step-wise manner at different temperatures from 520 °C to 650 °C. At low temperature, the Ge first grows nearly conformally over the patterned surface but at about 3 monolayers a strong surface roughening due to reconstruction of the surface ridges as well as side wall ripple formation occurs. At 600 °C, a similar roughening takes place, but Ge accumulates within the grooves such that at a critical thickness of 4.5 monolayers, 3D islands are formed at the bottom of the grooves. This accumulation process is enhanced at 650 °C growth, so that the island formation starts about 1 monolayers earlier. At 600 and 650 °C, all islands are all aligned at the bottom of the stripes, whereas at 550 °C Ge island form preferentially on top of ridges. The experimental observations are explained by the strong temperature dependence of Ge diffusion over the patterned surface.     

Initial oxidation kinetics of copper (1 1 0) film investigated by in situ UHV-TEM

Previous studies of the initial stage of oxidation on clean single crystal of Cu(1 0 0) have been extended to the case of the Cu(1 1 0) surface. The dynamic observation of the nucleation and growth of Cu oxide by means of in situ ultra high vacuum transmission electron microscopy (UHV-TEM) shows a highly enhanced oxidation rate on Cu(1 1 0) surface as compared to Cu(1 0 0). The kinetic data on the nucleation and growth of the three-dimensional oxide islands agree well with our heteroepitaxial model of surface diffusion of oxygen.     

STM and LEED observations of a c(2 × 2) Ge overlayer on Pt(1 0 0)

We have investigated surface structures formed by deposition of 0.2 and 0.5-ML Ge on Pt(1 0 0) by using scanning tunneling microscopy (STM) and low electron energy diffraction (LEED). In addition, their temperature dependence and reactivity to CO have been studied. We observed the formation of disordered domains for Ge adatom coverages below 0.25-ML and complete c(2 × 2) structures at 0.25 to 0.5-ML Ge after annealing at 600-1200 K. Deposition of 0.2-ML Ge on a clean, hexagonally reconstructed (5 × 20)-Pt(1 0 0) substrate at 400 K lifts the reconstruction and ejects excess Pt atoms from the first layer into the adlayer. After annealing this surface to 600 K, the deposited Ge formed Ge adatoms on flat terraces and on round Pt adislands with incomplete c(2 × 2) structures, in addition to the presence of clean (1 × 1)-Pt(1 0 0) domains that were several nanometers across. Some domains of the unreconstructed (5 × 20)-Pt(1 0 0) surface still remained. After the deposition of 0.5-ML Ge and annealing at 600 K, disordered Ge domains disappeared and a c(2 × 2) Ge overlayer was produced all over the surface. Square terraces with square domains of the clean (1 × 1)-Pt(1 0 0) surface extended for nanometers. Annealing this surface to 900 K produced disordered Ge domains, and this was associated with an increase in Ge vacancies. When surfaces with 0.2-ML Ge were heated to 900 or 1200 K, or when a surface with 0.5-ML Ge was heated to 1200 K, larger domains of (5 × 20)-Pt(1 0 0) were formed with the agglomeration of disordered Ge adatoms. Pt clusters were observed in the Ge domains, and we consider these to be composed of those excess Pt atoms formed by lifting the reconstruction of the (5 × 20)-Pt(1 0 0) surface upon Ge agglomeration during cooling. A paper published elsewhere [T. Matsumoto, C. Ho, M. Batzill, B.E. Koel, Physical Review B, submitted for publication.] describes Na⁺-ion scattering spectroscopy (Na⁺-ISS) and X-ray photoelectron diffraction (XPD) experiments that distinguish between Ge present in an overlayer from incorporation into the top Pt layer to form a surface alloy for the surface structures reported here. Furthermore, these investigations revealed that disordered Ge adatoms observed herein might be associated with incomplete c(2 × 2) structures. Therefore, our observations of the formation of complete and incomplete domains of c(2 × 2) Ge adatoms indicate that interactions between Ge adatoms are repulsive at nearest neighbor distances and attractive at second-nearest neighbor distances. Regarding the reactivity of these surfaces, CO does not chemisorb on a Pt(1 0 0) surface with a c(2 × 2)-Ge overlayer and no measurable CO uptake was observed under UHV conditions at 220 K.     

Epitaxial growth of Bi thin films on Ge(1 1 1)

We investigated Bi thin film growth on Ge(1 1 1) by using low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). In the submonolayer regime, adsorbed Bi atoms form patches of the (2×1) structure. However, the structure does not grow to a long-range order. Following the formation of a (1×1) monolayer (ML) film, two-dimensional (1 1 0)-orientated Bi islands grow. The film orientation changes from (1 1 0) to (1 1 1) at 6-10 ML. The (1 1 0)-oriented Bi film shows a six-domain LEED pattern with missing spots, associated with a glide-line symmetry. The hexagonal (1 1 1) film at 14 ML has a lattice constant 2% smaller than bulk Bi(1 1 1).     

Germanium growth on Br-terminated Si(1 0 0)

The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0).     

Morphology of Ni ultrathin films on Mo(1 1 0) and W(1 0 0) studied by LEED and STM

The morphology of ultrathin Ni films on Mo(1 1 0) and W(1 0 0) has been studied by low-energy electron diffraction and scanning tunneling microscopy. Ni films grow pseudomorphically on Mo(1 1 0) at 300 K for a coverage of 0.15 ML. A (8 × 1) structure is found at 0.4 ML, which develops into a (7 × 1) structure by 0.8 ML. The film undergoes a structural change to fcc Ni(1 1 1) at 6 ML. The growth mode switches from layer-by-layer to Stranski-Krastanov between 4 ML and 6 ML. Annealing at around 850 K results in alloying of submonolayer films with the substrate, while for higher coverages the Ni agglomerates into nanowedge islands. Ni films grow pseudomorphically on W(1 0 0) up to a coverage of around 2 ML at 300 K, above which there is a structural change from bcc to hcp Ni with the epitaxial relationship . This is accompanied by the formation of orthogonal domains of uniaxial strain-relieving dislocations from the third layer of the film. For coverages up to 1 ML the growth proceeds by formation of two-dimensional islands, but shifts to three-dimensional growth by 2 ML with rectangular islands aligned along the 〈0 1 1〉 substrate directions. Annealing at around 550 K results in agglomeration of Ni into larger islands and increasing film roughness.     

Fabrication of rubrene nanowires on vicinal (0 0 0 1) sapphire surfaces

Morphology of high-vacuum deposited rubrene thin films on the annealed (0 0 0 1) vicinal sapphire surfaces was studied by atomic force microscopy in non-contact mode. Atomic force microscopy images of rubrene thin films indicate that a regular array of steps on the sapphire surface acts as a template for the growth of the arrays of rubrene nanosize wires. To further demonstrate that morphological features of a substrate are crucial in determining the morphology of rubrene layers we have grown rubrene on the sapphire surfaces that were characterized by the terrace-and-step morphology with islands. We have found preferential nucleation of rubrene molecules at the intersection between a terrace and a step, as well as around the islands located on terraces.     

Formation and structure of a (√19 × √19)R23.4°-Ge/Pt(1 1 1) surface alloy

An ordered (√19 × √19)R23.4°-Ge/Pt(1 1 1) surface alloy can be formed by vapor depositing one-monolayer Ge on a Pt(1 1 1) substrate at room temperature and subsequently annealing at 900-1200 K. The long-range order of this structure was observed by low energy electron diffraction (LEED) and confirmed by scanning tunneling microscopy (STM). The local structure and alloying of vapor-deposited Ge on Pt(1 1 1) at 300 K was investigated by using X-ray Photoelectron Diffraction (XPD) and low energy alkali ion scattering spectroscopy (ALISS). XPS indicates that Ge adatoms are incorporated to form an alloy surface layer at ∼900 K. Results from XPD and ALISS establish that Ge atoms are substitutionally incorporated into the Pt surface layer and reside exclusively in the topmost layer, with excess Ge diffusing deep into the bulk of the crystal. The incorporated Ge atoms at the surface are located very close to substitutional Pt atomic positions, without any corrugation or “buckling”. Temperature Programmed Desorption (TPD) shows that both CO and NO adsorb more weakly on the Ge/Pt(1 1 1) surface alloy compared to that on the clean Pt(1 1 1) surface.     

Self-organized Fe nanostructures on W(1 1 0)

The magnetic domain structure of Fe wires, ribbons and islands with different shapes that have been prepared under ultra high vacuum conditions on W(1 1 0) are studied with spin polarized low energy electron microscopy. The dimensions of the nanostructures, which are of the order of tens and hundreds of nm, can be controlled by the temperature at which they are produced, by the average Fe coverage and by the substrate morphology. The domain structure of the nanostructures depends on their shape and is determined by the competition between magnetoelastic, shape and magnetocrystalline anisotropies.     

Fabrication of uniform Au silicide islands on the Si(1 1 1)-(7 × 7) substrate

The Au silicide islands have been fabricated by additional deposition of Au on the prepared surface at 270 °C where the Si islands of magic sizes were formed on the Si(1 1 1)-(7 × 7) dimer-adatom-stacking fault substrate. The surface structure on the Au silicide islands shows the Au/Si(1 1 1)-√3 × √3 reconstructed structure although the substrate remains 7 × 7 DAS structure. The size of the Au silicide islands depends on the size distribution of the preformed Si islands, because the initial size and shape of the Si islands play important roles in the formation of the Au silicide island. We have achieved the fabrication of the Au silicide islands of about the same size (∼5 nm) and the same shape by controlling the initial Si growth and the additional Au growth conditions.     

Growth of Ce on Rh(1 1 1)

We have studied the growth of cerium films on Rh(1 1 1) using STM (scanning tunneling microscopy), LEED (low energy electron diffraction), XPS (X-ray photoelectron spectroscopy) and AES (Auger electron spectroscopy). Measurements of the Ce films after room temperature deposition showed that Ce is initially forming nanoclusters in the low coverage regime. These clusters consist of 12 Ce atoms and have the shape of pinwheels. At a coverage of 0.25 ML (monolayer, ML) an adatom layer with a (2 × 2) superstructure is observed. Above 0.4 ML, Rh is diffusing through pinholes into the film, forming an unstructured mixed layer. Annealing at 250 °C leads to the formation of ordered Ce-Rh compounds based on the bulk compound CeRh₃. At a coverage of 0.1 ML, small ordered (2 × 2) surface alloy domains are observed. The exchanged Rh atoms form additional alloy islands situated on the pure Rh(1 1 1) surface, showing the same (2 × 2) superstructure as the surface alloy. At a coverage of 0.25 ML, the surface is completely covered by the surface alloy and alloy islands. The (2 × 2) structure is equivalent to a (1 1 1)-plane of CeRh₃, contracted by 6%. Annealing a 1 ML thick Ce layer leads to a flat surface consisting of different rotational domains of CeRh₃(1 0 0). The Rh needed for alloy formation comes from 50 Å deep pits in the substrate. Finally we show that LEIS (low energy ion scattering) is not suitable for the characterization of Ce and CeRh films due to strong effects of neutralization.     

Preferential heights in the growth of Ag islands on Si(1 1 1)-(7 × 7) surfaces

Growth behavior of thin Ag films on Si substrates at room temperature has been investigated by scanning tunneling microscopy and reflection high energy electron diffraction. In the layer-plus-island growth Ag islands show strongly preferred atomic scale heights and flat top. At low coverage (1 ML), islands containing two atomic layers of Ag are overwhelmingly formed. At higher coverages island height distribution shows strong peaks at relative heights corresponding to an even number (2, 4, 6, …) of Ag atomic layers. Beyond some coverage the height preference vanishes due to the appearance of screw dislocations and spiral growth.     

The periodicity in translation of Ag (0 0 1) and (1 1 0) twist grain boundary

The energies of Ag (0 0 1) and (1 1 0) twist grain boundary (GB) in translation have been calculated with the modified analytical embedded atom method (MAEAM). The energy period corresponds exactly to the DSC lattice unit cell and the area of the energy period referred to the CSL unit cell is 1/Σ². The ‘energy grooves’ are parallel to the sides of the CSL or DSC lattice unit cell. The most preferable sliding direction is parallel to identical sides of the square CSL unit cell for (0 0 1) boundaries and to the short side of the rectangular CSL unit cell for (1 1 0) boundaries. From energy minimization, the stable configuration appears when two adjacent grains are translated relatively to the corners, centre or sides’ midpoint of the DSC lattice unit cell.     

Self-assembled germanium nano-clusters on silver(1 1 0)

The adsorption of germanium on Ag(1 1 0) has been investigated by scanning tunnelling microscopy (STM), as well as surface X-ray diffraction (SXRD). At 0.5 germanium monolayer (ML) coverage, Low Energy Electron Diffraction (LEED) patterns reveals a sharp c(4 × 2) superstructure. Based on STM images and SXRD measurements, we present an atomic model of the surface structure with Ge atoms forming tetramer nano-clusters perfectly assembled in a two-dimensional array over the silver top layer. The adsorption of the germanium atoms induces a weak perturbation of the Ag surface. Upon comparison with results obtained on the (1 1 1) and (1 0 0) faces, we stress the role played by the relative interactions between silver and germanium on the observed surface structures.