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1.
Nanoneedles, nanorods of B-VO2, and vanadium oxide nanotubes with high crystallinity were synthesized via a one-step hydrothermal treatment using crystalline V2O5 as a precursor and aromatic amines (C6H5-(CH2)n-NH2 with n=0, 1, 3) as structure-directing templates. Samples were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray powder diffraction (XRD), thermal analysis, nitrogen adsorption/desorption isotherms and infrared spectroscopy. Nanoneedles, 0.5-5 μm in length and about 50 nm in average diameter and VO2(B) nanorods about 20-100 nm wide and up to 2.5 μm long, have been obtained. The inner and the outer diameters of the vanadium oxide nanotubes vary, respectively, between 15-25 and 70-100 nm with a length up to 4 μm.  相似文献   

2.
A new method was applied to prepare GaN nanorods. In this method, gallium oxide (Ga2O3) gel was firstly formed by a sol-gel processing using gallium ethanol, Ga(OC2H5)3, as a new precursor. GaN nanorods were successfully synthesized after annealing of the Ga2O3 gel at 1000 °C for 20 min in flowing ammonia. The as-prepared nanorods were confirmed as single crystalline GaN with wurtzite structure by X-ray diffraction (XRD), selected-area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM). Transmission electron microscopy (TEM) displayed that the GaN nanorods were straight and smooth, with diameters ranging from 200 nm to 1.8 μm and lengths typically up to several tens of microns. When excited by 280 nm light at room temperature, the GaN nanorods had a strong ultraviolet luminescence peak located at 369 nm and a blue luminescence peak located at 462 nm, attributed to GaN band-edge emission and the existence of the defects or surface states, respectively.  相似文献   

3.
Monolayer Ga adsorption on Si surfaces has been studied with the aim of forming p-delta doped nanostructures. Ga surface phases on Si can be nitrided by N2+ ion bombardment to form GaN nanostructures with exotic electron confinement properties for novel optoelectronic devices. In this study, we report the adsorption of Ga in the submonolayer regime on 7 × 7 reconstructed Si(1 1 1) surface at room temperature, under controlled ultrahigh vacuum conditions. We use in-situ Auger electron spectroscopy, electron energy loss spectroscopy and low energy electron diffraction to monitor the growth and determine the properties. We observe that Ga grows in the Stranski-Krastanov growth mode, where islands begin to form on two flat monolayers. The variation in the dangling bond density is observed during the interface evolution by monitoring the Si (LVV) line shape. The Ga adsorbed system is subjected to thermal annealing and the residual thermal desorption studied. The difference in the adsorption kinetics and desorption dynamics on the surface morphology is explained in terms of strain relaxation routes and bonding configurations. Due to the presence of an energetic hierarchy of residence sites of adatoms, site we also plot a 2D phase diagram consisting of several surface phases. Our EELS results show that the electronic properties of the surface phases are unique to their respective structural arrangement.  相似文献   

4.
Visible-light-driven TiO2-based catalysts for the degradation of pollutants have become the focus of attention. In the present work, iodine-doped titania photocatalysts (I-TiO2) were improved by doping with gallium (Ga,I-TiO2) and the resulting physicochemical properties and photocatalytic activity were investigated. The structural properties of the catalysts were determined by X-ray diffraction, UV-vis diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, Brunauer-Emmett-Teller analysis and transmission electron microscopy. We found that Ga probably enters the TiO2 framework for doping levels <0.5 mol%. A further increase in Ga content probably leads to dispersal of excess Ga on the TiO2 surface. The photocatalytic activity of Ga,I-TiO2 catalysts was evaluated using 2-chlorophenol (2-CP) as a model compound under visible and UV-vis light irradiation. The results indicate that 0.5 mol% Ga loading and calcination at 400 °C represent optimal conditions in the calcining temperature range 400-600 °C and with doping levels from 0.1% to 1 mol%. The effective enhancement of 2-CP degradation might be attributed to the formation of oxygen vacancies by Ga doping, which could decrease the recombination of electron-hole pairs.  相似文献   

5.
A. Khatiri 《Surface science》2004,549(2):143-148
Exposure of the As-terminated GaAs(0 0 1)-c(4 × 4) reconstructed surface to atomic hydrogen (H) at different substrate temperatures (50-480 °C) has been studied by reflection high-energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM). Hydrogen exposure at low temperatures (∼50 °C) produces a disordered (1 × 1) surface covered with AsHx clusters. At higher temperatures (150-400 °C) exposure to hydrogen leads to the formation of mixed c(2 × 2) and c(4 × 2) surface domains with H adsorbed on surface Ga atoms that are exposed due to the H induced loss of As from the surface. At the highest temperature (480 °C) a disordered (2 × 4) reconstruction is formed due to thermal desorption of As from the surface. The results are consistent with the loss of As from the surface, either through direct thermal desorption or as a result of the desorption of volatile compounds which form after reaction with H.  相似文献   

6.
Aligned ZnO nanotubes with the outer radius of about 200 nm were synthesized by a two-step approach, which involves electrospinning and sputtering techniques. The ZnO nanotubes are polycrystalline hexagonal structure, indicted by XRD and TEM analysis. The ZnO nanotubes show sensing property to H2. The sensor response of the aligned nanotubes to 100 ppm H2 increases from 2.3 to 3.6 with the temperature increasing from 200 to 400 °C. Beside, the sensor response of the ZnO nanotubes increases compared with that of the ZnO film prepared under the same condition.  相似文献   

7.
The physicochemical, surface and catalytic properties of pure and doped 0.25CuO-NiO solids prepared by sol-gel method were investigated. The dopant concentration was 2, 4 and 6 mol% ZrO2. The solids investigated were calcined at 400 and 600 °C. The techniques employed were XRD, EDX, TEM, surface excess oxygen, nitrogen adsorption at −196 °C and catalytic oxidation of CO by O2 using both static and flow methods. The results revealed that the investigated system dissolved 4 mol% ZrO2 by heating at 400 °C. This process was accompanied by a significant increase in the SBET and Vp with subsequent decrease in the (r) values of the doped adsorbent. ZrO2-doping of the system investigated followed by calcination at 400 and 600 °C led to a considerable increase in its catalytic activity in CO oxidation by O2 using static and flow methods. The doping process was not accompanied by any change in the activation energy of the catalyzed reaction.  相似文献   

8.
Results for deposition and thermal annealing of gallium on the Si(1 0 0)-(2 × 1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 °C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2 × 2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments.  相似文献   

9.
Iron, cobalt and a mixture of iron and cobalt incorporated mesoporous MCM-41 molecular sieves were synthesised by hydrothermal method and used to investigate the rules governing their nanotube producing activity. The catalysts were characterised by XRD and N2 sorption studies. The effect of the catalysts has been investigated for the production of carbon nanotubes at an optimised temperature 750 °C with flow rate of N2 and C2H2 is 140 and 60 ml/min, respectively for a reaction time 10 min. Fe-Co-MCM-41 catalyst was selective for carbon nanotubes with low amount of amorphous carbon with increase in single-walled carbon nanotubes (SWNTs) yield at 750 °C. Formation of nanotubes was studied using scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy. Transmission electron microscope and Raman spectrum was used to follow the quality and nature of carbon nanotubes formed and the graphitic layers and disordered band, which shows the clear evidence for the formation of SWNTs, respectively. The result propose that the diameter of the nanotubes in the range of 0.78-1.35 nm. Using our optimised conditions for this system, Fe-Co-MCM-41 showed the best results for selective SWNTs with high yield when compared with Fe-MCM-41 and Co-MCM-41.  相似文献   

10.
Nanocrystalline gallium phosphide (GaP) has been prepared through a reduction-phosphidation by using Ga, PCl3 as gallium and phosphorus sources and metallic sodium as reductant at 350 °C. The XRD pattern can be indexed as cublic GaP with the lattice constant of a=5.446 Å. The TEM image shows particle-like polycrystals and flake-like single crystals. The PL spectrum exhibits one peak at 330 nm for the as-prepared nanocrystalline GaP.  相似文献   

11.
Mesoporous SBA-15 was synthesized using rice husk ash (RHA) as the silica source and their defective Si-OH groups were grafted with tris(2-aminoethyl) amine (TREN) dendrimers generation through step-wise growth technique. The X-ray diffraction (XRD) and nitrogen adsorption/desorption results of parent SBA-15 obtained from RHA, suggests its resemblance with SBA-15 synthesized using conventional silica sources. Furthermore, the nitrogen adsorption/desorption results of SBA-15/TREN dendrimer generations (G1-G3) illustrates the growth of dendrimer inside the mesopores of SBA-15 and their CO2 adsorption capacity was determined at 25 °C. The maximum CO2 adsorption capacity of 5-6 and 7-8 wt% over second and third dendrimer generation was observed which is discernibly higher than the reported melamine and PAMAM dendrimers. The experimental CO2 adsorption capacity was found to be less than theoretically calculated CO2 adsorption capacity due to inter and intra molecular amidation as result of steric hindrance during the dendrimer growth. These SBA-15/TREN dendrimer generations also exhibit thermal stability up to 350 °C and CO2 adsorption capacity remains unaltered upon seven consecutive runs.  相似文献   

12.
Nitrogen-doped Y-junction bamboo-shaped carbon nanotubes were synthesized by chemical vapor deposition of monoethanolamine/ferrocene mixture on GaAs substrate at 950 °C. The use of monoethanolamine as the C/N feedstock simplifies the experimental arrangement by producing ammonia during the growth process. The structure, morphology and graphitization of as-grown nitrogen-doped carbon nanotubes (CNx) were examined by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy analysis. TEM analysis indicates that nanotubes have a bamboo-like structure. The nitrogen concentration on as-grown CNx nanotube was found to be 7.8 at.% by X-ray photoelectron spectroscopy (XPS) analysis. XPS analysis also indicated that there are two different types of nitrogen atoms (pyridinic and graphitic) in these materials. The possible growth mechanism of formation of Y-junction CNx nanotubes was briefly discussed. Field emission measurement suggested that as-grown CNx nanotubes are excellent emitters with turn-on and threshold fields of 1.6 and 2.63 V/μm, respectively. The result indicated that monoethanolamine proves to be an advantageous precursor to synthesize Y-junction nitrogen-doped carbon nanotubes and such nanotubes might be an effective material to fabricate various field emission devices.  相似文献   

13.
TiO2 nanotubes were prepared by hydrothermal method and Au (or Pt) was loaded on TiO2 nanotubes by photodeposition method. The photocatalysts were characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-vis diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS) and N2 adsorption technique, respectively. The photocatalytic properties of the samples were also investigated. The results show that TiO2 nanotubes with uniform diameter were prepared, and they have specific surface areas over 400 m2/g. The specific surface areas of TiO2 nanotubes decrease with the increasing of calcining temperature, and crystalline phase of TiO2 in the wall of nanotubes was transformed from anatase into rutile phase in calcination process. The photocatalytic activities of TiO2 nanotubes are higher than that of nanosized TiO2, and the photocatalytic activities of TiO2 nanotubes were enhanced after loading Au (or Pt). After irradiation for 40 min under a 300 W of middle-pressure mercury lamp (MPML), the degradation rate of methyl orange solution using the Au/TiNT-500 (or Pt/TiNT-500) as a catalyst can reach 96.1% (or 95.1%). On the other hand, Au-loaded sample has evident adsorption peak in visible range, indicating that Au-loaded TiO2 nanotubes are hopeful to become visible light photocatalyst.  相似文献   

14.
ZnO films doped with Ga (GZO) of varying composition were prepared on Corning glass substrate by radio frequency magnetron sputtering at various deposition temperatures of room temperature, 150, 250 and 400 °C, and their temperature dependent photoelectric and structural properties were correlated with Ga composition. With increasing deposition temperature, the Ga content, at which the lowest electrical resistivity and the best crystallinity were observed, decreased. Films with optimal electrical resistivity of 2-3 × 10−4 Ω cm and with good crystallinity were obtained in the substrate temperature range from 150 to 250 °C, and the corresponding CGa/(CGa + CZn) atomic ratio was about 0.049. GZO films grown at room temperature had coarse columnar structure and low optical transmittance, while films deposited at 400 °C yielded the highest figure of merit (FOM) due to very low optical absorption despite rather moderate electrical resistivity slightly higher than 4 × 10−4 Ω cm. The optimum Ga content at which the maximum figure of merit was obtained decreased with increasing deposition temperature.  相似文献   

15.
H. Rauscher  R.J. Behm 《Surface science》2007,601(19):4608-4619
The interaction of CO with structurally well-defined PtxRuy surface alloys supported on Ru(0 0 0 1) was investigated by thermal desorption spectroscopy and infrared reflection-absorption spectroscopy. The surface composition and the distribution of the surface atoms were controlled by high resolution scanning tunneling microscopy. On these surfaces, which have a nearly random distribution of the two surface species, the adsorption (and desorption) of CO is strongly modified compared to the pure elemental surfaces, by strain effects and electronic ligand effects. CO adsorbs exclusively in a linear configuration on Pt and Ru atoms for all surfaces investigated. The adsorption energy of CO is lowered on the alloy surfaces with respect to both Pt(1 1 1) and Ru(0 0 0 1), similar as for pseudomorphic monolayer Pt films. For both Pt and Ru sites the adsorption strength decreases with increasing Pt concentration.  相似文献   

16.
In this study, we demonstrate the large-scale synthesis of beta gallium oxide (β-Ga2O3) nanowires through microwave plasma chemical vapor deposition (MPCVD) of a Ga droplet in the H2O and Ar atmosphere at 600 W. Unlike the commonly used MPCVD method, the H2O, not mixture of gas, was employed to synthesize the nanowires. The ultra-long β-Ga2O3 nanowires with diameters of about 20-30 nm were several tens of micrometers long. The morphology and structure of products were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscope (HRTEM). The growth of β-Ga2O3 nanowires was controlled by vapor-solid (VS) crystal growth mechanism.  相似文献   

17.
In-doped Ga2O3 zigzag-shaped nanowires and undoped Ga2O3 nanowires have been synthesized on Si substrate by thermal evaporation of mixed powders of Ga, In2O3 and graphite at 1000 °C without using any catalyst via a vapor-solid growth mechanism. The morphologies and microstructures of the products were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL). The nanowires range from 100 nm to several hundreds of nanometers in diameter and several tens of micrometers in length. A broad emission band from 400 to 700 nm is obtained in the PL spectrum of these nanowires at room temperature. There are two blue-emission peaks centering at 450 and 500 nm, which originate from the oxygen vacancies, gallium vacancies and gallium-oxygen vacancy pairs.  相似文献   

18.
Highly ordered titanium oxide (TiO2) nanotubes were prepared by electrolytic anodization of titanium electrodes. Morphological evolution and phase transformations of TiO2 nanotubes on a Ti substrate and that of freestanding TiO2 membranes during the calcinations process were studied by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction microscopy. The detailed results and mechanisms on the morphology and crystalline structure were presented. Our results show that a compact layer exists between the tubular layer and Ti substrate at 600 °C, and the length of the nanotubes shortens dramatically at 750 °C. The freestanding membranes have many particles on their tubes during calcinations from 450 to 900 °C. The TiO2 nanotubes on the Ti substrate transform to rutile crystals at 600 °C, while the freestanding TiO2 membranes retain an anatase crystal with increasing temperature to 800 °C. The photocatalytic activity of TiO2 nanotubes on a Ti substrate annealed at different temperatures was investigated by the degradation of methyl orange in aqueous solution under UV light irradiation. Due to the anatase crystals in the tubular layer and rutile crystals in the compact layer, TiO2 nanotubes annealed at 450 °C with pure anatase crystals have a better photocatalytic activity than those annealed at 600 °C or 750 °C.  相似文献   

19.
Morphological, structural, electronic, and adsorption characteristics of complex oxides such as fumed silica/alumina and silica/titania, fumed silica with deposited oxides of Mg, Ti, Mn, Ni, Cu, Zn and Zr, silica gel with grafted ZrO2, sol-gel titania doped by 3d-metals (Cr, Fe, Mn, V) were compared using adsorption, TEM, AFM, XRD, XPS, Mössbauer and Raman spectroscopy data. It was shown that surface, volume, and phase compositions of oxides, particle size distributions (5 nm-3 μm), specific surface area (SBET ∼ 50-500 m2/g), and porosity (VP ∼ 0.1-2 cm3/g) affected by synthesis technique and subsequent treatment determine electronic structure (bandgap, valence band and core levels structure) of the materials, adsorption of molecules and metal ions as well as other characteristics.  相似文献   

20.
A differential desorption technique, called intermittent temperature-programmed desorption (ITPD), was used to give new insights into the properties of La1−xSrxCo0.8Fe0.2O3 perovskites as a contribution to improve their performances with respect to various important application fields such as catalysis, electrocatalysis and solid oxide fuel cells (SOFC). Both ITPD and interrupted TPD (carried out at different heating rates) evidenced two distinct oxygen adsorbed states, desorbing at temperatures lower than 400 °C, corresponding to less than 5% of a compact monolayer of oxide ions. The first one, for low desorption temperatures (lower than 290 °C) exhibits a heat of adsorption (ΔH) distribution from 101 to 121 kJ mol−1. The second one, for higher desorption temperatures (between 290 and 400 °C) corresponds to ΔH = 146 ± 4 kJ mol−1. Additionally, for temperatures higher than 400 °C, we observed a continuous desorption of oxygen species, probably originating from the sub-surface or semi-bulk, with an associated activation energy of desorption ≥175 kJ mol−1.  相似文献   

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