Thin film and interface properties during ZnO deposition onto high-barrier hybrid/PET flexible substrates

The combination of transparent conductive oxides with high-barrier films deposited onto flexible polymeric substrates is of considerable importance in order to improve the efficiency, lifetime and stability of flexible electronic devices. In this work, ZnO thin films have been deposited onto high-barrier hybrid/PET flexible substrates by pulsed DC magnetron sputtering, at room temperature and by applying different power values on the target. The employment of in situ and real-time Vis–fUV (1.5–6.5 eV) spectroscopic ellipsometry allowed the investigation of the growth mechanisms of ZnO thin films as well as the modification procedure in the hybrid's surface. Island growth is dominant during the initial stages of deposition concerning low target power regime, whereas layer-by-layer deposition prevails at the high target power regime. The hybrid's modified layer of ～10 nm was confirmed by the transmission electron microscopy measurements which additionally revealed a columnar structure of the film with a nanocrystalline morphology. The estimated size of the nanocrystals (～15 nm and above) was compatible with atomic force microscopy (AFM) measurements. Finally, the evolution of the optical parameters (energy gap and absorption peaks) of the ZnO films during the deposition was similar.     

Metal catalyst-assisted growth of GaN nanowires on graphene films for flexible photocatalyst applications

We report the growth of high-areal-density GaN nanowires on large-size graphene films using a nickel (Ni) catalyst-assisted vapor-liquid-solid (VLS) method. Before the nanowire growth, the graphene films were prepared on copper foils using hot-wall chemical vapor deposition and transferred onto SiO₂/Si substrates. Then, for catalyst-assisted VLS growth, Ni catalyst layers with thickness of a few nanometers were deposited on the graphene-coated substrates using a thermal evaporator. We investigated the effect of the Ni catalyst thickness on the formation of GaN nanowires. Furthermore, the structural and optical characteristics of GaN nanowires were investigated using X-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopy. The GaN nanowires grown on graphene films were transferred onto polymer substrates using a simple lift-off method for applications as flexible photocatalysts. Photocatalysis activities of the GaN nanowires prepared on the flexible polymer substrates were investigated under bending conditions.     

Thin films of polymer blends deposited by matrix-assisted pulsed laser evaporation: Effects of blending ratios

In this work, we show successful use of matrix-assisted pulsed laser evaporation (MAPLE) for obtaining thin films of PEG:PLGA blends, in the view of their use for controlled drug delivery. In particular, we investigate the influence of the blending ratios on the characteristics of the films. We show that the roughness of the polymeric films is affected by the ratio of each polymer within the blend. In addition, we perform Fourier transformed infrared spectroscopy (FTIR) measurements and we find that the intensities ratios of the infrared absorption bands of the two polymers are consistent with the blending ratios. Finally, we assess the optical constants of the polymeric films by spectroscopic ellipsometry (SE). We point out that the blending ratios exert an influence on the optical characteristics of the films and we validate the SE results by atomic force microscopy and UV-vis spectrophotometry. In all, we stress that the ratios in which the two polymers are blended have significant impact on the morphology, chemical structure and optical characteristics of the polymeric films deposited by MAPLE.     

Studying polymer thin films with hybrid optical microcavities

Organic and inorganic polymeric thin films have numerous applications, including solar cells, biodetection, and nanocomposites. Improving our understanding of the fundamental material behavior is critical to designing polymers with ideal behavior and increased lifetime. However, there are limited nondestructive characterization methods that are able to perform these high-resolution measurements. In this Letter, we demonstrate a method that is able to detect temperature-induced changes in the refractive index of polystyrene polymer thin films as small as 10(-7). This approach is based on optical microcavity resonators. The experimental results agree well with the theoretical simulations.     

The influence of using different substrates on the structural and optical characteristics of ZnO thin films

ZnO thin films with thikness d = 100 nm were deposited onto different substrates such as glass, kapton, and silicon by radio frequency magnetron sputtering. The structural analyses of the films indicate they are polycrystalline and have a wurtzite (hexagonal) structure.The ZnO layer deposited on kapton substrate shows a stronger orientation of the crystallites with (0 0 2) plane parallel to the substrate surface, as compared with the other two samples of ZnO deposited on glass and silicon, respectively.All three layers have nanometer-scale values for roughness, namely 1.7 nm for ZnO/glass, 2.4 nm for ZnO/silicon, and 6.8 nm for ZnO/kapton. The higher value for the ZnO layer deposited on kapton substrate makes this sample suitable for solar cells applications. Transmission spectra of these thin films are strongly influenced by deposition conditions. With our deposition conditions the transparent conducting ZnO layer has a good transmission (78-88%) in VIS and NIR domains. The values of the energy gap calculated from the absorption spectra are 3.23 eV for ZnO sample deposited onto glass substrate and 3.30 eV for the ZnO sample deposited onto kapton polymer foil substrate. The influence of deposition arrangement and oxidation conditions on the structural, morphological, and optical properties of the ZnO films is discussed in the present paper.     

Thickness effects on the optical properties of layer-by-layer poly(p-phenylene vinylene) thin films and their use in energy-modulated structures

Poly(p-phenylene vinylene) (PPV) thin films were produced by layer-by-layer (LbL) method, using soluble PPV-precursor and dodecylbenzenesulfonate salt (DBS). The amount of deposited layers strongly influences the optical properties of the thermally converted PPV film. The absorbance and luminescence spectra of ultra-thin films (consisting of only two or three PPV layers) are shifted to smaller wavelengths with respect to spectra of thicker films. This is related to the smaller average conjugation length of polymer chains, resulting in a higher HOMO-LUMO gap energy of the material. However, if a thick film is produced by repeating the deposition process and thermal conversion of ultra-thin layers, the optical spectra are still displaced to higher energies in comparison with those of thicker films produced by the conventional continuous deposition of layers. This result enabled the production of multilayered polymeric films with modulated energy profile, taking the number of deposited layers as the only variable in the manufacturing process of the structure. The aim is to guide the excitation to specific regions of the material through the Förster-type energy transfer processes. Such systems can be used at interfaces electrode/polymer and/or electrode/polymeric active layers in order to improve the performance of organic optoelectronic devices.     

On the Electronic Transport and Optical Properties of Some Poly(Azomethine Urethane) in Thin Films

Abstract

Newly synthesized poly(azomethine urethanes) in thin films were deposited onto glass substrates from dimethylformamide solutions. Temperature dependences of the electrical conductivity and thermoelectric power were studied. The investigated polymers have interesting semiconductor characteristics. The values of important parameters of these films (activation energy of electrical conduction, charge carrier concentrations, and ratio of carrier mobilities) were calculated. The nature of the electrical conduction mechanism in the respective polymers is discussed. Transmission and absorption spectra were studied in the spectral domain, 300–1250 nm.     

Micropatterning and transferring of polymeric semiconductor thin films by hot lift-off and polymer bonding lithography in fabrication of organic field effect transistors (OFETs) on flexible substrate

Micropatterning and transferring of polymeric semiconductor thin films by hot lift-off and polymer bonding lithography in fabrication of OFETs with polymeric dielectric on the flexible substrate was proposed. The desired polymeric semiconductor patterns were fabricated on the flat polydimethylsiloxane (PDMS) surface with a selective lift-off method we proposed previously. The isolated and well defined polymeric semiconductor patterns left on the flat PDMS surface can be further transferred to the gate polymeric dielectric surface by polymer bonding lithography due to the low interfacial energy of PDMS. The transistor fabricated with this ‘dry’ process has a higher field-effect mobility compared with that using spin coated semiconductor layer.     

Crystal orientation control of polycrystalline TiN thin films using ZnO under layers deposited by magnetron sputtering

The effect of ZnO under layers on crystal growth of TiN thin films was investigated. TiN single layers and double-layered ZnO/TiN thin films were deposited on soda-lime-silicate glass substrates by magnetron sputtering. XRD analysis indicated that TiN single layers exhibited {1 1 1} preferred orientation on glass substrates; on the other hand, the TiN thin films with {1 0 0} preferred orientation were obtained using ZnO under layers and crystallized better than the TiN single layers. This crystal orientation change of TiN thin films should come from heteroepitaxial-like growth because the TiN{1 0 0} and ZnO{0 0 1} crystal lattice planes have similar atomic arrangements. Besides, the possible mismatch between TiN and ZnO atomic arrangements was estimated to be 7.8%. Furthermore, the resistivity and optical absorbance of TiN thin films decreased when they were deposited on ZnO under layers. It can be considered that electrical and optical properties should be improved due to the well-crystallization of TiN thin films using ZnO under layers.     

Studies on thin films of lead chalcogenides

A good deal of information regarding the synthesis and opto–electro-structural properties of thin films of lead chalcogenides have been revealed. The development of laser technology had opened up new application for narrow gap lead salts and their alloys. The polycrystalline thin films were deposited onto optically plane and chemically clean glass substrates by vacuum evaporation technique. The films were thin, uniform, smooth and tightly adherent to the substrates.Optical absorption spectroscopy, X-ray diffraction technique and current–voltage characteristics method were used to characterize the films. The absorption coefficients and optical band gaps of films were determined by using FTIR spectrophotometer. The nature of sample, crystal structure and lattice parameters of films were found from X-ray diffractograms. The dc conductivities and activation energies of films were measured in temperature range 300–380 K. Schottky junctions of PbS, PbSe and PbTe with indium metal were made. The barrier heights and ideality factors of these metal–semiconductor junctions were determined by using I–V characteristics.     

Resonant infrared laser deposition of polymer-nanocomposite materials for optoelectronic applications

Polymers find a number of potentially useful applications in optoelectronic devices. These include both active layers, such as light-emitting polymers and hole-transport layers, and passive layers, such as polymer barrier coatings and light-management films. This paper reports the experimental results for polymer films deposited by resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) and resonant infrared pulsed laser deposition (RIR-PLD) for commercial optoelectronic device applications. In particular, light-management films, such as anti-reflection coatings, require refractive-index engineering of a material. However, refractive indices of polymers fall within a relatively narrow range, leading to major efforts to develop both low- and high-refractive-index polymers. Polymer nanocomposites can expand the range of refractive indices by incorporating low- or high-refractive-index nanoscale materials. RIR-MAPLE is an excellent technique for depositing polymer-nanocomposite films in multilayer structures, which are essential to light-management coatings. In this paper, we report our efforts to engineer the refractive index of a barrier polymer by combining RIR-MAPLE of nanomaterials (for example, high refractive-index TiO₂ nanoparticles) and RIR-PLD of host polymer. In addition, we report on the properties of organic and polymer films deposited by RIR-MAPLE and/or RIR-PLD, such as Alq₃ [tris(8-hydroxyquinoline) aluminum] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)]. Finally, the challenges and potential for commercializing RIR-MAPLE/PLD, such as industrial scale-up issues, are discussed.     

Electroluminescence from hybrid organic–inorganic LEDs based on thermally evaporated CdS thin films

Hybrid organic–inorganic light emitting devices combine the color purity and durability of inorganic light emitting diodes (LEDs) with high efficiency, flexibility and low processing cost of organic LEDs (OLEDs). A significant challenge is to incorporate inorganic nanocrystals inside the OLED structure. In the present work, thin films of CdS were successfully incorporated inside standard OLED structure using vacuum thermal evaporation technique. For the characterization of these films, they were deposited on plain glass plates at room temperature and studied using structural (XRD and TEM), morphological (SEM and AFM) and optical (UV and PL) techniques. The films were found to be composed of nanocrystals of CdS in which the size of the crystals increased with the increase in film thickness. The hybrid organic–inorganic LEDs showed improved luminance and efficiency as compared to the organic LED without CdS layers.     

Structural, optical and electrochemical properties of TiO2 thin films grown by APCVD method

Atmospheric pressure chemical vapor deposition (APCVD) of TiO₂ thin films has been achieved onto glass and onto ITO-coated glass substrates, from the reaction of TiCl₄ with ethyl acetate (EtOAc). The effect of the synthesis temperature on the optical, structural and electrochemical properties was studied through spectral transmittance, X-ray diffraction (XRD) and electrochemical impedance spectroscopy (EIS) measurements. It was established that the TiO₂ films deposited onto glass substrate, at temperatures greater than 400 °C grown with rutile type tetragonal structure, whereas the TiO₂ films deposited onto ITO-coated glass substrate grown with anatase type structure. EIS was applied as suitable method to determine the charge transfer resistance in the electrolyte/TiO₂ interface, typically found in dye-sensitized solar cells.     

Structural and optical properties of Co-doped NiO films prepared by SILAR method

In this study, transparent thin films of un-doped and Co-doped nickel oxide were deposited onto microscopic glass substrates using the successive ionic layer adsorption and reaction (SILAR) method. The effect of cobalt doping on structural, morphological and optical properties was investigated. XRD studies reveal that all the films are polycrystalline with cubic structure and exhibit (1 1 1) and (2 2 2) preferential orientations. Co is well incorporated in the host lattice without altering the structure. All films retain high transparency throughout the visible spectral regime. No significant shift in Raman spectra was observed due to the Co doping.     

Solid state NMR study of carbon bonding in amorphous hydrogenated carbon films

Carbon bonding environments in hydrogenated amorphous carbon films (a-C:H) deposited from an rf-biased methane plasma onto various substrates have been quantified by application of solid state¹³C NMR. A family of films were prepared by systematically varying the substrate bias voltage. Quantitative data on carbon chemistry in these films is required for modeling the impact of structure on mechanical and optical properties. A variety of NMR acquisition pulse sequences have been investigated to determine the conditions under which quantitative¹³C NMR data can be acquired in this system. The results indicate that data acquisition from this material requires different protocols than for the study of polymeric hydrocarbon films. With proper experimental design, NMR is an excellent technique for structural studies of these materials.     

A dual-band flexible frequency selective surface with miniaturized elements and maximally flat (Butterworth) response

A dual-band flexible frequency selective surface （FSS） with miniaturized elements and maximally flat （Butterworth） response is presented in this paper. It is composed of three metallic layers, which are fabricated on thin flexible polyimide substrates and bonded together using thin bonding films. The overall thickness of the proposed structure is only about 0.3 mm, making it an attractive choice for conformal FSS applications. All the three layers can constitute a miniaturized- element FSS （MEFSS） and produce the first pass-band with miniaturization property, while the up and bottom layers can constitute a symmetric biplanar FSS and produce the second pass-band with maximally fiat （Butterworth） response. The two pass-bands are independent and there is a wide band spacing up to 30 GHz between them. The principles of operation, the simulated results by using the vector modal matching method, and the experimental values of the fabricated prototype are also presented and discussed.     

Determination and analysis of dispersive optical constants of CuIn3S5 thin films

CuIn₃S₅ thin films were prepared from powder by thermal evaporation under vacuum (10⁻⁶ mbar) onto glass substrates. The glass substrates were heated from 30 to 200 °C. The films were characterized for their optical properties using optical measurement techniques (transmittance and reflectance). We have determined the energy and nature of the optical transitions of films. The optical constants of the deposited films were determined in the spectral range 300-1800 nm from the analysis of transmission and reflection data. The Swanepoel envelope method was employed on the interference fringes of transmittance patterns for the determination of variation of refractive index with wavelength. Wemple-Di Domenico single oscillator model was applied to determine the optical constants such as oscillator energy E₀ and dispersion energy E_d of the films deposited at different substrate temperatures. The electric free carrier susceptibility and the ratio of the carrier concentration to the effective mass were estimated according to the model of Spitzer and Fan.     

The comparison between CdS thin films grown on Si(111) substrate and quartz substrate by femtosecond pulsed laser deposition

Two kinds of cadmium sulfate (CdS) thin films have been grown at 600 °C onto Si(111) and quartz substrates using femtosecond pulsed laser deposition (PLD). The influence of substrates on the structural and optical properties of the CdS thin films grown by femtosecond pulsed laser deposition have been studied. The CdS thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy. Although CdS thin films deposited both on Si(111) and quartz substrates were polycrystalline and hexagonal as shown by the XRD , SEM and AFM results, the crystalline quality and optical properties were found to be different. The size of the grains for the CdS thin film grown on Si(111) substrate were observed to be larger than that of the CdS thin film grown on quartz substrate, and there is more microcrystalline perpendicularity of c-axis for the film deposited on the quartz substrate than that for the films deposited on the Si substrate. In addition, in the PL spectra, the excitonic peak is more intense and resolved for CdS film deposited on quartz than that for the CdS film deposited on Si(111) substrate. The LO and TO Raman peaks in the CdS films grown on Si(111) substrate and quartz substrate are different, which is due to higher stress and bigger grain size in the CdS film grown on Si(111) substrate, than that of the CdS film grown on the amorphous quartz substrate. All this suggests that the substrates have a significant effect on the structural and optical properties of thin CdS films. PACS 81.15.Fg; 81.05.Ea; 78.20.-e; 78.67.-n; 42.62.-b     

Deposition of copper iodide thin films by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) methods

In this paper, we report structural, morphological, electrical studies of copper iodide (CuI) thin films deposited onto glass substrates by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) methods. CuI thin films were characterized for their structural, morphological and wettability studies by means of X-ray diffraction (XRD), FT-Raman spectroscopy, scanning electron microscopy (SEM), optical absorption, and contact angle measurement methods. Thickness of thin films was 1 ± 0.1 μm measured by gravimetric weight difference method. The CuI thin films were nanocrystalline, with average crystal size of ～60 nm. The FT-IR study confirmed the formation of CuI on the substrate surface. SEM images revealed the compact and cube like structure for CuI thin films deposited by CBD and SILAR methods, respectively. Optical absorption study revealed optical energy gaps as 2.3 and 3.0 eV for CBD and SILAR methods, respectively. Wettability study indicated that CuI thin films deposited by SILAR method are more hydrophobic as compared to CBD method.     

Novel type of indium oxide thin films sputtering for opto-electronic applications

Transparent conductive oxide (TCO) thin films play a significant role in recent optical technologies. Displays of various types, photovoltaic systems, and opto-electronic devices use these films as transparent signal electrodes. They are used as heating surfaces and active control layers. Oxides of TCO materials such as: tin, indium, zinc, cadmium, titanium and the like, exhibit their properties. However, indium oxide and indium oxide doped with tin (ITO) coatings are the most used in this technology.In this work, we present conductive transparent indium oxide thin films which were prepared using a novel triode sputtering method. A pure In₂O₃ target of 2 in. in diameter was used in a laboratory triode sputtering system. This system provided plane plasma discharge at a relatively low pressure 0.5-5 mTorr of pure argon. The substrate temperature was varied during the experiments from room temperature up to 200 °C. The films were deposited on glass, silicon, and flexible polyimide substrates. The films were characterized for optical and electrical properties and compared with the indium oxide films deposited by magnetron sputtering.