Ripple formation in the chromium thin film during laser ablation

The beam of a nanosecond pulse laser tightly focused to a line was applied for the back-side ablation of the chromium thin film on a glass substrate. The stripe ablated with a single laser pulse had sharp edges on both sides and ridges of the melted metal around it. The partially overlapping pulses formed a wide cleaned area with a complicated structure made of the metal remaining from the ridges. Regular structures, ripples, were developed when laser fluence was slightly above the single-pulse removal threshold and the shift between pulses was less than half width of the line ablated with a single laser pulse. The ripples were located periodically (∼4 μm) and were orientated perpendicularly to the long axis of the beam spot. Their orientation did not depend on the laser beam polarization. Different models of the ripple formation in the thin metal film were considered, and instability of the moving vapor-liquid-solid contact line during evaporation of thin liquid films appears to be the most probable process responsible for the observed phenomena. Formation of regular gratings with the unlimited line length was experimentally implemented by using the above-mentioned technique.     

Self-organization in a chromium thin film under laser irradiation

Self-organization of chromium on glass was observed during laser ablation of the metal film with partially overlapping laser pulses. The beam of a nanosecond pulse laser tightly focused to a line was applied to the back-side ablation of the chromium thin film on a glass substrate. While the line ablated with a single laser pulse had sharp edges on both sides with ridges of the melted metal, the use of partially overlapping pulses formed a complicated structure made of the metal remaining from the ridges. Regular structures of ripples were developed in a certain range of laser fluence and pulse overlap. The ripple period could be controlled from 2.5 to 4 μm by variation of the processing parameters. Various experimental techniques were applied to test the structures, and different models of the ripple formation in the thin metal film were considered. The initial quasi-periodical formation started because of dewetting of thin liquid metal films on the glass substrate after its melting. Similar to the evaporation of liquid films, the small perturbation in the ridge thickness was able to induce instability in evaporation of the thin melted metal film. Freezing of the nonequilibrium state between laser pulses was one of the stabilizing factors in self-organization of the metal.     

Peculiarity of metal drilling with a commercial femtosecond laser

A commercial femtosecond pulse laser was used to study the interaction of ultrashort laser pulses with aluminum. Tests were conducted to measure the average drilling rate over a range of laser pulse energies in both air and vacuum at the wavelengths corresponding to the fundamental and second harmonic of the laser. For the fundamental wavelength, it was observed that the drilling rates in vacuum were significantly higher than that for drilling in atmospheric air. For the laser beam that was converted to second harmonic, the drilling rate in vacuum at the same energy was slightly lower than that for drilling in air. The observed results can be explained by the presence of an energetic nanosecond pedestal in the laser pulse produced by the femtosecond laser system. This nanosecond component provides a major contribution into drilling and it is strongly affected by the optical breakdown plasma that reduces the drilling rate in air. Conversion to second harmonic reduces the relative energy content of the nanosecond component resulting in a higher contrast femtosecond pulse that is not affected by the near surface plasma. The presence of air results in self-focusing of the second harmonic laser beam, causing an increased drilling rate as compared to the interaction in vacuum.     

High power single-shot laser ablation of silicon with nanosecond 355 nm

We report on high intensity single-shot laser ablation of monocrystalline silicon with a nanosecond Nd:YAG at 355 nm. It is shown that for incident laser intensities exceeding ∼11.5 GW/cm² on the silicon surface, unusually high etch depths can be achieved reaching values up to 60 μm. The results support previous observations of dramatic increase in etch rates in single-shot laser ablation at 266 nm. A laser-induced explosive boiling mechanism together with secondary plasma heating is believed to be associated with this effect.     

Surface modification of a WTi thin film on Si substrate by nanosecond laser pulses

Interaction of a nanosecond transversely excited atmospheric (TEA) CO₂ laser, operating at 10.6 μm, with tungsten-titanium thin film (190 nm) deposited on silicon of n-type (1 0 0) orientation, was studied. Multi-pulse irradiation was performed in air atmosphere with laser energy densities in the range 24-49 J/cm². The energy absorbed from the laser beam was mainly converted to thermal energy, which generated a series of effects. The following morphological changes were observed: (i) partial ablation/exfoliation of the WTi thin film, (ii) partial modification of the silicon substrate with formation of polygonal grains, (iii) appearance of hydrodynamic features including nano-globules. Torch-like plumes started appearing in front of the target after several laser pulses.     

Adhesion measurement of thin films by a modified laser spallation technique: theoretical analysis and experimental investigation

Laser driven shocks can lead to a dynamic failure, called film spallation. Here, we use a modified laser spallation set-up to measure the dynamic adhesion of thin films and we propose a novel diagnostic technology. Based on correlation theory, new spallation criteria for characterizing the progressive damage at the interface between the film and the substrate are established, such as interface delamination, film spallation and film expulsion. With the help of the theory, the degree of damage and the dimension of damage (i.e. fracture), such as the minimum width of delamination radius, the thickness of the film etc., are estimated. Experiments are carried out on epoxy/stainless steel and epoxy/Al, and the experimental results show that their dynamic bonding strengths are about 25 MPa and 20 MPa, respectively. The detailed results, analyses and discussions are presented in this paper. Received: 6 February 2001 / Accepted: 3 December 2001 / Published online: 11 February 2002     

Mass spectrometric study of photo dissociation of organic molecules by vacuum-ultraviolet irradiation for development of analysis technique

We have observed the photo-chemical reaction process of organic molecules in gas phase induced by vacuum ultraviolet (VUV) radiation. We chose hydrocarbons that contain five carbons in a molecule as samples. To observe the wavelength dependence, three kinds of excimer lamps (Ar₂*-126 nm, Kr₂*-147 nm and Xe₂*-172 nm) were used as light sources of the VUV radiation. Vaporized organic molecular compounds were irradiated by the VUV at a pressure of 12 Pa and detected by means of mass spectrometry. Change of the mass spectra with the irradiation period was measured. As a result, we found that different reaction rates were observed for the different compounds. In particular, 1-pentene and cyclopentane, which have the same molecular weight, have very different decomposition speeds for the irradiation of 172-nm radiation. The facts observed in this work are considered to be very promising for developing a technique to distinguish the targeted compound from others that have similar structures.     

Deep drilling of metals by femtosecond laser pulses

Results of recent investigations on deep drilling of metals by femtosecond laser pulses are reported. At high laser fluences, well above the ablation threshold, femtosecond lasers can drill deep, high-quality holes in metals without any post-processing or special gas environment. It is shown that for high-quality drilling of metals, the following processes are important: (1) laser-induced optical breakdown of air containing metal vapor and small metal particles (debris) generated by multi-pulse femtosecond laser ablation, (2) transformation of laser pulses into light filaments, and (3) low-fluence finishing. Received: 15 November 2002 / Accepted: 20 January 2003 / Published online: 28 May 2003 RID="*" ID="*"Corresponding author. Fax: +49-511/2788-100, E-mail: ch@lzh.de     

Microstructuring of fused silica by laser-induced backside wet etching using picosecond laser pulses

The laser-induced backside wet etching (LIBWE) is an advanced laser processing method used for structuring transparent materials. LIBWE with nanosecond laser pulses has been successfully demonstrated for various materials, e.g. oxides (fused silica, sapphire) or fluorides (CaF₂, MgF₂), and applied for the fabrication of microstructures. In the present study, LIBWE of fused silica with mode-locked picosecond (t_p = 10 ps) lasers at UV wavelengths (λ₁ = 355 nm and λ₂ = 266 nm) using a (pyrene) toluene solution was demonstrated for the first time. The influence of the experimental parameters, such as laser fluence, pulse number, and absorbing liquid, on the etch rate and the resulting surface morphology were investigated. The etch rate grew linearly with the laser fluence in the low and in the high fluence range with different slopes. Incubation at low pulse numbers as well as a nearly constant etch rate after a specific pulse number for example were observed. Additionally, the etch rate depended on the absorbing liquid used; whereas the higher absorption of the admixture of pyrene in the used toluene enhances the etch rate and decreases the threshold fluence. With a λ₁ = 266 nm laser set-up, an exceptionally smooth surface in the etch pits was achieved. For both wavelengths (λ₁ = 266 nm and λ₂ = 355 nm), LIPSS (laser-induced periodic surface structures) formation was observed, especially at laser fluences near the thresholds of 170 and 120 mJ/cm², respectively.     

Pt/Ti Electrodes of PZT Thin Films Patterning by Novel Lift-Off Using ZnO as a Sacrificial Layer

We achieve a successful novel lift-off of patterning Pt/Ti electrodes on SiO2/Si substrates by employing ZnO sacrificial layer deposition and patterning, successive uniform Pt/Ti deposition and final lift-off. Then we deposit PZT thin films on the electrodes. Compared with the conventional lift-off processes for the electrodes, this novel process does not need post-annealing, which must be performed after conventional lift-off process. It is demonstrated that the electrodes patterned by the novel lift-off process have stronger adhesion. The electrodes and the PZT films on the electrodes are more compact and smoother than those by the conventional lift-off process.     

Effect of polarization on femtosecond laser pulses structuring silicon surface

Arrays of conical-like spikes can be formed on silicon surface after irradiated with femtosecond laser pulses in ambient of SF₆ or N₂. In this article, we report our observations on how the shape of the spikes formed on silicon surface varies with the polarization of laser beam. The experimental results show that, with circular polarized laser irradiation, the shape of the spikes is conical; however, with linearly polarized laser irradiation, the spikes show elliptic conical shape, and the long-axes are perpendicular to the direction of the polarization of laser beam. The asymmetric shape of spikes produced by linearly polarized laser beam can be explained by considering the polarization dependence of Fresnel-refraction.     

Formation of nanobumps and nanoholes in thin metal films by strongly focused nanosecond laser pulses

Nanobumps and nanoholes have been formed in gold and silver films with various thicknesses on a dielectric substrate by strongly focused single nanosecond pulses of a Nd:YAG laser. An apertureless dielectric fiber probe and an aspherical lens with a numerical aperture of 0.5 were used to focus laser radiation into a diffraction-limited spot on the surface of gold and silver films, respectively. Atomic force and electron microscopy studies have demonstrated that the shape and dimension of nanostructures, as well as the threshold parameters of laser radiation for their formation, are determined by the thickness of a modified film (“size effect”) and by the duration of a laser pulse owing to the lateral heat conduction in films (nonlocal energy deposition effect). Mechanisms of the dynamic formation of such structures in metallic films by nanosecond laser pulses due to phase transformations of their material have been discussed.     

Machining of transparent materials using an IR and UV nanosecond pulsed laser

Channels are traditionally machined in materials by drilling from the front side into the bulk. The processing rate can be increased by two orders of magnitude for transparent materials by growing the channel from the rear side. The process is demonstrated using nanosecond laser pulses to drill millimeter-sized channels through thick silica windows. Absorbing defects are introduced onto the rear surface to initiate the coupling of energy into the material. Laser drilling then takes place when the fluence exceeds a threshold. The drilling rate increases linearly with fluence above this threshold. While UV light drills about four times faster than IR light, the pulse length (in the nanosecond regime) and the pulse repetition rate (in the 0.1–10 Hz range) do not greatly influence the drilling rate per pulse. Drilling rates in excess of 100 μm per pulse are achieved by taking advantage of the propagation characteristics of the plasma created at the drilling front. The plasma during rear-side drilling generates a laser-supported detonation wave into the bulk material. The geometry also seems to increase the efficiency of the laser-induced plasma combustion and shock wave during the pulse by confining it in front of the channel tip. Received: 1 July 1999 / Accepted: 17 April 2000 / Published online: 20 September 2000     

Evolution of surface morphology of NiO thin films under swift heavy ion irradiation

NiO nanoparticle thin films grown on Si substrates were irradiated by 107 MeV Ag⁸⁺ ions. The films were characterized by glancing angle X-ray diffraction and atomic force microscopy. Ag ion irradiation was found to influence the shape and size of the nanoparticles. The pristine NiO film consisted of uniform size (∼100 nm along major axis and ∼55 nm along minor axis) elliptical particles, which changed to also of uniform size (∼63 nm) circular shape particles on irradiation at a fluence of 3 × 10¹³ ions cm⁻². Comparison of XRD line width analysis and AFM data revealed that the particles in the pristine films are single crystalline, which turn to polycrystalline on irradiation with 107 MeV Ag ions.     

Laser removal of loose uranium compound contamination from metal surfaces

Pulsed laser removal of surface contamination of uranyl nitrate and uranium dioxide from stainless steel has been studied. Most of the loosely bound contamination has been removed at fluence levels below 0.5 J cm⁻², leaving about 5% fixed contamination for uranyl nitrate and 15% for uranium dioxide. Both alpha and beta activities are then sufficiently low that contaminated objects can be taken out of a restricted radiation area for re-use. The ratio of beta to alpha activity is found to be a function of particle size and changes during laser removal. In a separate experiment using technetium-99m, the collection of removed radioactivity in the filter was studied and an inventory made of removed and collected contamination.     

Microlens arrays of high-refractive-index glass fabricated by femtosecond laser lithography

Microlens arrays of high-refractive-index glass GeO₂-SiO₂ were fabricated by femtosecond laser lithography assisted micromachining. GeO₂-SiO₂ thin glass films, which were deposited by plasma-enhanced chemical vapor deposition, have a refractive index of 1.4902 and exhibit high transparency at wavelengths longer than 320 nm. Using a femtosecond laser, three-dimensional patterns were written inside resists on GeO₂-SiO₂ films, and then the patterns were transferred to the underlying films by CHF₃ and O₂ plasma treatments. This combined process enabled us to obtain uniform microlens structures with a diameter of 38 μm. The heights of the transferred lenses were approximately one-quarter the height of the resist patterns, due to differences in the plasma etching rates between GeO₂-SiO₂ and the resist. The lens surfaces were smooth. When 632.8-nm-wavelength He-Ne laser light was normally coupled to the lenses, focal spots with a diameter of 3.0 μm were uniformly observed. The combined process was effective in fabricating three-dimensional surfaces of inorganic optical materials.     

High-power laser interactions with nanostructured materials

We use short-pulse high-power lasers to selectively modify the structure of nanolaminates and nanocrystals. It is demonstrated that femtosecond pulses can achieve excellent results for microscopic thin film removal. Laser pulses can also be used to modify the crystal structure of thin films. It is also demonstrated that coherent laser excitation promotes a selective modification of nanocrystals, resulting in changes of size, shape, and crystal structure. Received: 7 October 2002 / Accepted: 20 January 2003 / Published online: 28 May 2003 RID="*" ID="*"Corresponding author. Fax: +1-414/229-5589, E-mail: yakovlev@uwm.edu     

Femtosecond-laser-induced nanostructure formed on hard thin films of TiN and DLC

We report observation of nanostructures formed on thin TiN and DLC films that were irradiated by 800- and 267-nm, femtosecond (fs) Ti:sapphire laser pulses at an energy fluence slightly above the ablation threshold. On the ablated thin-film surfaces, the linearly polarized fs pulses produce arrays of fine periodic structures that are almost oriented to the direction perpendicular to the laser polarization, while the circularly polarized light forms fine-dot structures. The size of these surface structures is 1/10–1/5 of the laser wavelength and decreases with a decrease in the laser wavelength. Received: 3 September 2002 / Accepted: 4 September 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +81-778/62-3306, E-mail: yasuma@fukui-nct.ac.jp     

Influence of laser fluence and irradiation timing of F2 laser on ablation properties of fused silica in F2-KrF excimer laser multi-wavelength excitation process

A collinear irradiation system of F₂ and KrF excimer lasers for high-quality and high-efficiency ablation of hard materials by the F₂ and KrF excimer lasers’ multi-wavelength excitation process has been developed. This system achieves well-defined micropatterning of fused silica with little thermal influence and little debris deposition. In addition, the dependence of ablation rate on various conditions such as laser fluence, irradiation timing of each laser beam, and pulse number is examined to investigate the role of the F₂ laser in this process. The multi-wavelength excitation effect is strongly affected by the irradiation timing, and an extremely high ablation rate of over 30 nm/pulse is obtained between -10 ns and 10 ns of the delay time of F₂ laser irradiation. The KrF excimer laser ablation threshold decreases and its effective absorption coefficient increases with increasing F₂ laser fluence. Moreover, the ablation rate shows a linear increase with the logarithm of KrF excimer laser fluence when the F₂ laser is simultaneously irradiated, while single KrF excimer laser ablation shows a nonlinear increase. The ablation mechanism is discussed based on these results. Received: 16 July 2001 / Accepted: 27 July 2001 / Published online: 2 October 2001