ToF-SIMS studies of Bacillus using multivariate analysis with possible identification and taxonomic applications

In this paper we discuss the application of ToF-SIMS with an Au₃⁺ primary ion beam, combined with principal components analysis (PCA) and discriminant function analysis (DFA) for the identification of individual strains of two Bacillus species. The ToF-SIMS PC-DFA methodology is capable of distinguishing bacteria at the strain level based on analysis of surface chemical species. By classifying the data using hierarchical cluster analysis (HCA) we are able to show quantitative separation of species and of these strains. This has taxonomic implications in the areas of rapid identification of pathogenic microbes isolated from the clinic, food and environment.     

Quantitative analysis of organic additive content in a polymer by ToF-SIMS with PCA

Quantitative analysis of organic materials by ToF-SIMS is intrinsically difficult because of their tendency to decompose under ion irradiation. In this study, we applied principal component analysis (PCA) as a means of compensation for the spectral degradation caused by this decomposition and thus improve the accuracy of the quantitative analysis, using as models two organic additives of quite different composition and vulnerability to decomposition under ion irradiation, in polystyrene. This enables the extraction of a principal component related to their content that is independent of the decomposition. The effectiveness of this approach in quantitative analysis of organic additives content in polymers without loss in accuracy due to spectral degradation will be discussed.     

Application of ToF-SIMS to the study on heartwood formation in Cryptomeria japonica trees

Influence of gold- and carbon-coating on ToF-SIMS analysis of Cryptomeria japonica (Sugi) wood has been investigated to apply the samples after observing water distribution by cryo-scanning electron microscopy (cryo-SEM) or analyzing distribution of metal elements by SEM with energy dispersive X-ray spectrometer (SEM/EDX) to ToF-SIMS analysis to study the mechanism of heartwood formation of woody plants. The intensities of peaks at the m/z 285 ion in positive mode and the m/z 283 ion in negative mode from gold- and carbon-coated samples were compared with from those of non-coated samples. Those peaks were apparently attributable to ferruginol, a typical heartwood compounds in Sugi tree. From both gold- and non-coated samples, positive m/z 285 ions were generated. On the other hand, in negative mode, the intensity of m/z 283 ion was decreased after coating with gold. From carbon-coated samples, intensities of both positive m/z 285 ion and negative m/z 283 ion were decreased. These results suggest that the samples coated with gold for cryo-SEM could be applied to ToF-SIMS analysis directly to investigate the relation between water distribution and distribution of heartwood substances in heartwood-forming Sugi trees. However, non-coated samples should be used for SEM/EDX before analyzing by ToF-SIMS.     

Removal of lead(II) by adsorption onto Viscumalbum L.: Effect of temperature and equilibrium isotherm analyses

The removal efficiency of Viscumalbum L. from lead containing aqueous solutions was investigated. The effect of adsorbent mass, pH of solution, initial Pb(II) concentration and temperature was investigated using a batch adsorption technique. The optimum pH for Pb(II) adsorption was found as 3.0 for Viscumalbum L. Results were analyzed by the Langmuir, Freundlich, Temkin and Harkins-Jura, equation using linearized correlation coefficient at different temperature. The characteristic parameters for each isotherm have been determined. The Langmuir model agrees very well with experimental data than the other models. According to Langmuir isoterm, the monolayer saturation capacity (Q_o) is 769.23 mg/g at 25 °C. Models and the isotherm constant were evaluated depending on temperature. Thermodynamic parameters such as ΔH^o, ΔS^o and ΔG^o were calculated. The adsorption process was found to be endothermic and spontaneous. The experimental data were analyzed using the first- and the second-order kinetic models. The rate constants of adsorption for both kinetics models have been calculated. The second-order model provides the best correlation of the data.     

Investigation of molecular weight effects of polystyrene in ToF-SIMS using C60 and Au primary ion beams

In secondary ion mass spectrometry, polyatomic primary ion sources are known to enhance yields from many surfaces including polymers. In order to understand the fundamental causes for these increases, the enhancement as a function of material type and molecular weight needs to be delineated. In this article, we report results from a systematic investigation of polymeric films of polystyrene (PS) with varying molecular weights to examine the influence of the primary ion beam on the secondary ion yields in time of flight secondary ion mass spectrometry (ToF-SIMS). The masses of the polymers investigated ranged from 1000 to 20,000 Da, or from about n = 10 to 200 where n indicates the number of polymeric units in a polymer chain. The polymers had a narrow molecular weight range (PDI < 1.07). The multilayer polymeric films (10-30 nm) characterized by AFM were prepared by spin-casting onto silicon substrates and were analyzed using Au⁺ and C₆₀⁺ primary ion beams. The analysis with the two beams provided a useful comparison between atomic and polyatomic primary ion sources. Information gathered from this study provides insight into the role of molecular weight on the observed yield enhancement from polyatomic ion sources.     

On the temperature dependence of Na migration in thin SiO2 films during ToF-SIMS O2 depth profiling

The detection of Na in insulating samples by means of time of flight-secondary ion mass spectrometry (ToF-SIMS) depth profiling has always been a challenge. In particular the use of O₂⁺ as sputter species causes a severe artifact in the Na depth distribution due to Na migration under the influence of an internal electrical filed. In this paper we address the influence of the sample temperature on this artifact. It is shown that the transport of Na is a dynamic process in concordance with the proceeding sputter front. Low temperatures mitigated the migration process by reducing the Na mobility in the target. In the course of this work two sample types have been investigated: (i) A Na doped PMMA layer, deposited on a thin SiO₂ film. Here, the incorporation behavior of Na into SiO₂ during depth profiling is demonstrated. (ii) Na implanted into a thin SiO₂ film. By this sample type the migration behavior could be examined when defects, originating from the implantation process, are present in the SiO₂ target. In addition, we propose an approach for the evaluation of an implanted Na profile, which is unaffected by the migration process.     

Luminescent properties of KGd1−x(WO4)2:Eux and KGd1−x(WO4)2−y(MoO4)y:Eux phosphors in UV-VUV regions

KGd_1−x(WO₄)_2−y(MoO₄)_y:Eu³⁺_x(0.1?x?0.75, y=0 and 0.2) phosphors are synthesized through traditional solid-state reaction and their luminescent properties in ultraviolet (UV) and vacuum ultraviolet (VUV) regions are investigated. Under 147 nm excitation, these phosphors show characteristic red emission with good color purity. In order to improve their emission intensity, the MoO₄²⁻ (20 wt%) is introduced into the anion of KGd_1−x(WO₄):Eu³⁺_x. The Mo⁶⁺ and Eu³⁺ co-doped KGd(WO₄)₂ phosphors show higher emission intensity in comparison with the singly Eu³⁺-doped KGd(WO₄)₂ in VUV region. The chromaticity coordination of KGd_0.45(WO₄):Eu³⁺_0.55 is (x=0.669, y=0.331), while that of KGd_0.45(WO₄)_1.8(MoO₄)_0.2:Eu³⁺_0.55 is (x=0.666, y=0.334) in VUV region.     

Photocatalytic decomposition of methylene blue and 4-chlorophenol on nanocrystalline TiO2 films under UV illumination: A ToF-SIMS study

The photocatalytic degradation of methylene blue and 4-chlorophenol on nanocrystalline TiO₂ (nc-TiO₂) under UV irradiation was investigated by time-of-flight secondary ion mass spectrometry (ToF-SIMS). Nanocrystalline TiO₂ films were prepared from suspensions containing TiO₂-crystallites of different average sizes, the smallest one being 12 nm. The organic substances (either methylene blue or 4-chlorophenol) were applied to these films. The specimens were studied in the pristine state and upon UV exposure. The UV illuminations were carried out both under atmospheric conditions and in situ under ultrahigh vacuum in the ToF-SIMS instrument. Distinct mass signals from the parent molecules and from fragment ions are observed for the as-prepared samples. Upon irradiation with UV light under atmospheric conditions, the surface composition is significantly changed, an observation ascribed to photocatalytic reactions induced by UV photons: the parent molecule signals are strongly diminished whereas fragmentation products are identified to be present at the TiO₂ surfaces. UV irradiations carried out under different vacuum conditions in the ToF instrument (ultrahigh vacuum, air or oxygen adsorption) indicate that varying ambient conditions may influence the photocatalytic reaction on the nanocrystalline TiO₂ films.     

Characterisation of human hair surfaces by means of static ToF-SIMS: A comparison between Ga and C60 primary ions

This study deals with the secondary ion yield improvement induced by using C₆₀⁺ primary ions instead of Ga⁺ ones to characterize human hair surfaces by ToF-SIMS. For that purpose, a bunch of hair fibres has been analysed with both ion sources. A high improvement is observed for the detection of amino acids with C₆₀⁺ primary ions as compared to Ga⁺ ions. As an example, a yield enhancement factor greater than 3000 is found for the CNO⁻ peak. A similar gain is observed for the positive secondary ions characteristic of the amino acids. Most of the atomic ions, such as Ca⁺, O⁻ and S⁻, constitute minor peaks with C₆₀⁺ ions while they often dominate the spectrum in the case of Ga⁺ ions. However, with the C₆₀⁺ source, a series of inorganic combination peaks with the elements Ca, S and O are observed in the positive spectra (i.e. HCaSO₄⁺), while they are marginal with the Ga⁺ source. For the mass range beyond 100 m/z and in both polarities, the hair fingerprints are similar with both sources. In average, for a comparable number of primary ions per spectrum, the C₆₀⁺ ion source gives intensities between two and three orders of magnitude higher than the Ga⁺ one.     

C-V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures

We studied influence of rapid thermal annealing on electrical parameters of SF₆ plasma treated AlGaN/GaN heterostructures. The main emphasis by the evaluation was laid on C-V measurement and simulation, but also I-V and SIMS measurement were used. It was found that the diminished sheet carrier concentration of a two-dimensional electron gas after plasma treatment recovered significantly at the temperature of 500 °C. By using C-V measurement, it was possible to assess besides the changes of the two-dimensional electron gas concentration after annealing also the changes in the Schottky barrier heights and to find out the doping concentration in AlGaN barrier and GaN channel layer. The trend in Schottky barrier height changes after annealing was confirmed also by I-V measurement.     

Cavity ring down absorption spectroscopy of the BΣ-XΣ transition of YO

The absorption spectrum of the (2, 0) and (2, 1) bands of the B²Σ⁺-X²Σ⁺ transition of YO between 442 and 478 nm were recorded using laser vaporization/reaction with free-jet expansion and cavity ring down laser absorption spectroscopy. Local rotational perturbations have been found for both spin components of the v = 2 level of the B²Σ⁺ state. The observed perturbations could be ascribed to a degenerate perturbing state interacting with the B²Σ⁺ state. Least-squares fit of the observed upper state term values yielded molecular constants for the v = 2 level of the B²Σ⁺ state and the perturbing ²Π state. Earlier ab initio calculations [J. Chem. Phys. 89 (1988) 2160] indicated that the C²Π state is nearby, it is plausible that the C²Π state is the perturbing state.     

Probing CPT violation in neutrino oscillation: A three flavor analysis

We have studied CPT violation in neutrino oscillation considering three flavor framework with matter effect. We have constructed a new way to find the oscillation probability incorporating CPT violating terms without any approximation. Then CPT   violation with atmospheric neutrinos for a magnetized iron calorimeter detector considering the muons (directly measurable with high resolution) of the charge current events has been studied for zero and nonzero θ₁₃${\theta }_{13}$ values. It is found that a potential bound of δb₃₂?6×¹⁰⁻²⁴ GeV$\delta b_{32}?6\times {10}^{-24}\text{GeV}$ at 99% CL can be obtained with 1 Mton.year exposure of this detector; and unlike neutrino beam experiments, there is no possibility to generate ‘fake’ CPT violation due to matter effect with atmospheric neutrinos. The advantages of atmospheric neutrinos to discriminate CPT violation from CP violation and nonstandard interactions are also discussed.     

Investigation of diode parameters using I-V and C-V characteristics of In/SiO2/p-Si (MIS) Schottky diodes

A study on interface states density distribution and characteristic parameters of the In/SiO₂/p-Si (MIS) capacitor has been made. The thickness of the SiO₂ film obtained from the measurement of the corrected capacitance in the strong accumulation region for MIS Schottky diodes was 220 Å. The diode parameters from the forward bias I-V characteristics such as ideality factor, series resistance and barrier heights were found to be 1.75, 106-112 Ω and 0.592 eV, respectively. The energy distribution of the interface state density D_it was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density obtained using the I-V characteristics had an exponential growth, with bias towards the top of the valance band, from 9.44×10¹³ eV⁻¹ cm⁻² in 0.329-E_v eV to 1.11×10¹³ eV⁻¹ cm⁻² in 0.527-E_v eV at room temperature. Furthermore, the values of interface state density D_it obtained by the Hill-Coleman method from the C-V characteristics range from 52.9×10¹³ to 1.11×10¹³ eV⁻¹ cm⁻² at a frequency range of 30kHz-1 MHz. These values of D_it and R_s were responsible for the non-ideal behaviour of I-V and C-V characteristics.     

Luminescence investigation of red phosphors Ca0.54Sr0.34−1.5xEu0.08Smx(MoO4)y (WO4)1−y for UV-white LED device

Ca_0.54Sr_0.34−1.5xEu_0.08Sm_x(MoO₄)_y (WO₄)_1−y red phosphors were prepared by solid-state reaction using Na⁺ as a charge compensator for light-emitting diodes (LED). The effects of Na⁺ concentration, synthesis temperature, reaction time and Eu³⁺ concentration were studied for the properties of luminescence and crystal structure of red phosphors. The results show that the optimum reaction condition is 6%, 900 °C, 2 h and 8%. The photoluminescence spectra show that red phosphors are effectively excited at 616 nm by 292, 395 and 465 nm. The wavelengths of 465 nm nicely match the widely applied emission wavelengths of blue LED chips.     

Beyer’s non-linearity parameter (B/A) in benzylidene aniline Schiff base liquid crystalline systems

The non-linearity parameter B/A is estimated for a number of liquid crystal materials of the type N-(p-n-alkoxy benzylidene)-p-n-alkyl anilines, popularly known as nO.m, where n and m are the aliphatic chains on either side of the rigid core, which can be varied from 1 to 18 to realize a number of LC materials with a variety LC phase variants. The B/A values are computed from both density and sound velocity data following standard relations reported in literature. This systematic study in a homologous series provides an opportunity to study how this parameter behaves with (1) either the alkoxy and/or alkyl chain number, (2) with the total chain number (n+m), (3) with increase in molecular weight and (4) whether the linear relations reported in literature either with αT [thermal expansion coefficient (α) and temperature (T)] and sound velocity (u) will hold good or not and if so to what extent. The results are discussed with the body of data available in literature on liquids, liquid mixtures and other LC materials.     

Effect of sintering atmosphere on the electrical and optical properties of (ZnO)1−x(MnO2)x NTCR ceramics

Nominal composition of (ZnO)_1−x(MnO₂)_x (0.005≤x≤0.2) ceramics have been prepared by the standard solid-state reaction method in three different sintering atmospheres: Ar, air, and reductive atmosphere. The effect of sintering atmosphere on the electron spin resonance (ESR), negative temperature coefficient of resistivity (NTCR), and photoluminescence (PL) properties of (ZnO)_1−x(MnO₂)_x ceramics has been investigated in detail. The results demonstrate that the sintering atmosphere has significant effects on the ESR signals of (ZnO)_1−x(MnO₂)_x; the NTCR of the samples sintered in air is larger than those sintering in Ar and reductive atmosphere; the deep-level PL related to oxygen vacancy increases when sintered in the reductive atmosphere.     

Understanding nitrogen-induced effects on the performance of ultra low-k dielectric systems through ab initio simulations

Large scale ab initio molecular dynamics simulations were performed to investigate how Cu/ultra low-k systems are improved when N is incorporated into the pore-sealing layers. It was found that the high affinity of N to Ta and H gives rise to new phases that prevent H atoms from penetrating the Ta diffusion barrier layer. Consequently, the Ta layer forms organized structures with good barrier performance and electrical conductivity. Furthermore, a continuous ductile film is formed to seal the highly porous polymer dielectrics. Interfacial adhesion between the pore-sealing layer and the dielectrics is also enhanced by inter-diffusion.     

Theoretical analysis of fluorine-passivated germanium surface for high-k/Ge gate stack by molecular orbital method

Energy state and coordination of fluorine (F)-passivated Ge surface have been theoretically analyzed by semi-empirical molecular orbital method in comparison with hydrogen-passivated Ge surface to predict usefulness of F for passivation element and surface stabilization. Heat of formation for the reaction of F atoms and Ge layer system decreased simultaneously without energy barrier. Resultantly, F-Ge bonds were formed on Ge layer system and Ge surface dangling bonds were passivated by F dissimilar to the reaction of H atoms and Ge layer system. Furthermore, it was confirmed experimentally that the electrical properties of HfO₂/Ge gate stack were improved by F₂-ambient treatment of Ge substrate prior to HfO₂ deposition. It is concluded that F-passivation of Ge surface is useful in making stable and low-defective Ge substrate for high-k dielectric layer deposition.